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    ORGANIC TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND ORGANIC TRANSISTOR
    11.
    发明申请
    ORGANIC TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND ORGANIC TRANSISTOR 失效
    有机晶体管，半导体器件和有机晶体管的制造方法

    公开(公告)号：US20130105784A1

    公开(公告)日：2013-05-02

    申请号：US13722028

    申请日：2012-12-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Ryota IMAHAYASHI ,  Shinobu FURUKAWA ,  Atsuo ISOBE ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

    IPC: H01L51/05 ,  H01L51/00

    CPC classification number: H01L51/0512 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/31683 ,  H01L51/0002 ,  H01L51/0055 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566

    Abstract: It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

    Abstract translation: 本发明的目的是形成致密且具有很强绝缘电阻特性的高质量栅极绝缘膜，并且提出了隧道泄漏电流很小的高可靠性有机晶体管。 本发明的有机晶体管的一种模式具有如下步骤：通过使用密集的方法形成作为活化氧（或含氧气体）或氮（或含氮气体）的栅极的导电层形成栅极绝缘膜 电子密度为1011cm -3以上的等离子体，等离子体活化时电子温度为0.2eV〜2.0eV的范围，直接与成为要被绝缘的栅电极的导体层的一部分反应。

    PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF
    16.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 有权
    光电转换装置及其制造方法

    公开(公告)号：US20150053264A1

    公开(公告)日：2015-02-26

    申请号：US14514552

    申请日：2014-10-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Sho KATO ,  Yoshikazu HIURA ,  Akihisa SHIMOMURA ,  Takashi OHTSUKI ,  Satoshi TORIUMI ,  Yasuyuki ARAI

    IPC: H01L31/077 ,  H01L31/0376

    CPC classification number: H01L31/077 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    Abstract: An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the butler layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

    Abstract translation: 目的在于提高光电转换装置的转换效率，而不增加制造步骤。 光电转换装置包括使用在支撑基板上形成的具有一种导电类型的单晶半导体形成的第一半导体层，包括单晶区域和非晶区域的缓冲层，包括单晶区域的第二半导体层 和非晶区域，并且设置在管状层上方，以及设置在第二半导体层上的具有与一种导电类型相反的导电类型的第三半导体层。 单晶区域的比例高于第二半导体层中的第一半导体层侧的非晶区域的比例，并且非晶区域的比例高于第三半导体层侧的单晶区域的比例。

    LIGHT-EMITTING DEVICE AND DISPLAY DEVICE
    17.
    发明申请
    LIGHT-EMITTING DEVICE AND DISPLAY DEVICE 审中-公开
    发光装置和显示装置

    公开(公告)号：US20140339528A1

    公开(公告)日：2014-11-20

    申请号：US14284721

    申请日：2014-05-22

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Yasuyuki ARAI

    IPC: H01L51/52 ,  H01L27/32

    CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/32 ,  H01L27/3244 ,  H01L27/3246 ,  H01L29/78603 ,  H01L51/5221 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/5281 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5338

    Abstract: Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to improve the moisture resistance of the organic resin substrate for the sake of maintaining the reliability of an EL element. Hard carbon films are formed to cover a surface of the organic resin substrate and outer surfaces of a sealing member. Typically, DLC (Diamond like Carbon) films are used as the carbon films. The DLC films have a construction where carbon atoms are bonded into an SP3 bond in terms of a short-distance order, although the films have an amorphous construction from a macroscopic viewpoint. The DLC films contain 95 to 70 atomic % carbon and 5 to 30 atomic % hydrogen, so that the DLC films are very hard and minute and have a superior gas barrier property and insulation performance.

    Abstract translation: 尽管有机树脂基材在降低重量和提高显示装置的抗冲击性方面是高度有效的，但是为了保持EL元件的可靠性，需要提高有机树脂基板的耐湿性。 形成硬碳膜以覆盖有机树脂基板的表面和密封部件的外表面。 通常，使用DLC（类金刚石碳）作为碳膜。 DLC膜具有以短距离顺序将碳原子键合成SP3键的结构，尽管从宏观角度看，该膜具有非晶结构。 DLC膜含有95至70原子％的碳和5至30原子％的氢，使得DLC膜非常硬且分钟，并且具有优异的阻气性和绝缘性能。

    ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE
    18.
    发明申请
    ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE 有权
    有机电致发光显示装置

    公开(公告)号：US20140312334A1

    公开(公告)日：2014-10-23

    申请号：US14323243

    申请日：2014-07-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Yasuyuki ARAI

    IPC: H01L51/52 ,  H01L27/32

    CPC classification number: H01L51/5237 ,  H01L27/3244 ,  H01L51/524 ,  H01L51/5259 ,  H01L51/5275 ,  H01L51/5281 ,  H01L2251/5315 ,  H05B33/04

    Abstract: An organic EL display device of active matrix type wherein insulated-gate field effect transistors formed on a single-crystal semiconductor substrate are overlaid with an organic EL layer; characterized in that the single-crystal semiconductor substrate (413 in FIG. 4) is held in a vacant space (414) which is defined by a bed plate (401) and a cover plate (405) formed of an insulating material, and a packing material (404) for bonding the bed and cover plates; and that the vacant space (414) is filled with an inert gas and a drying agent, whereby the organic EL layer is prevented from oxidizing.

    Abstract translation: 其中有源矩阵型的有机EL显示器件，其中形成在单晶半导体衬底上的绝缘栅场效应晶体管与有机EL层重叠; 其特征在于，单晶半导体衬底（图4中的413）保持在由隔板（401）和由绝缘材料形成的盖板（405）限定的空白空间（414）中，并且 包装材料（404），用于粘合床和盖板; 并且空置空间（414）填充有惰性气体和干燥剂，由此防止有机EL层氧化。

    SEMICONDUCTOR DEVICE
    19.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140014954A1

    公开(公告)日：2014-01-16

    申请号：US14024962

    申请日：2013-09-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiromichi GODO ,  Yasuyuki ARAI ,  Satohiro OKAMOTO ,  Mari TERASHIMA ,  Eriko NISHIDA ,  Junpei SUGAO

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606

    Abstract: An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.

    Abstract translation: 本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了小型化，同时保持了有利的特性。 半导体包括与氧化物半导体层接触的氧化物半导体层，源电极和漏电极，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及 绝缘层设置成与氧化物半导体层接触。 氧化物半导体层的侧表面与源电极或漏电极接触。 氧化物半导体层的上表面与源电极或漏电极重叠，绝缘层介于氧化物半导体层与源电极或漏电极之间。

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