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公开(公告)号：US09053925B2
公开(公告)日：2015-06-09
申请号：US13081264
申请日：2011-04-06
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
摘要翻译： 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。
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公开(公告)号：US08852384B2
公开(公告)日：2014-10-07
申请号：US13584646
申请日：2012-08-13
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01L21/67 , G01N21/68
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译： 提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。
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公开(公告)号：US20140054269A1
公开(公告)日：2014-02-27
申请号：US13626793
申请日：2012-09-25
IPC分类号： C23F1/00
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32091 , H01J37/321 , H01J37/32192 , H01J37/32357 , H01J37/32449 , H01J37/32458 , H01J37/32715 , H01J2237/334 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67069
摘要： Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.
摘要翻译： 用于蚀刻具有至少一个初级等离子体产生区域的等离子体处理室中的衬底和通过半屏障结构从所述初级等离子体产生区域分离的次级等离子体产生区域的方法。 该方法包括从主要等离子体产生区域中的主进料气体产生主要等离子体。 该方法还包括从次级等离子体产生区域中的二次进料气体产生二次等离子体，以使至少一些来自第二等离子体的物质迁移到初级等离子体产生区域。 该方法另外包括在初级等离子体已经用来自二次等离子体的迁移物质增强之后用初级等离子体蚀刻基板。
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公开(公告)号：US08580078B2
公开(公告)日：2013-11-12
申请号：US11698189
申请日：2007-01-26
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/3065 , H01L21/02087 , H01L21/67069 , H01L21/6838
摘要： A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.
摘要翻译： 包括用于清洁斜边缘并用于减小半导体衬底的弯曲曲率的真空吸盘的斜面蚀刻机。 斜面蚀刻机包括真空吸盘和等离子体产生单元，其将处理气体激发成等离子体状态。 真空吸盘包括卡盘主体和支撑环。 卡盘体的上表面和支撑环的内周形成由安装在支撑环上的基板的底面包围的真空区域。 真空泵在运行期间抽空真空区域。 真空吸盘可操作以通过衬底的顶表面和底表面之间的压力差将衬底保持在适当的位置。 压差也产生弯曲力以减小基板的弯曲曲率。
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公开(公告)号：US20130126486A1
公开(公告)日：2013-05-23
申请号：US13438473
申请日：2012-04-03
申请人： Ryan Bise , Rajinder Dhindsa , Alexei Marakhtanov , Lumin Li , Sang Ki Naw , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony Dela Llera , Darrell Ehrlich
发明人： Ryan Bise , Rajinder Dhindsa , Alexei Marakhtanov , Lumin Li , Sang Ki Naw , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony Dela Llera , Darrell Ehrlich
IPC分类号： B23K9/00
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.
摘要翻译： 等离子体处理的系统和方法包括等离子体处理系统，其包括等离子体室和耦合到等离子体室的控制器。 等离子体室包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心气体注入区域。
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公开(公告)号：US08414790B2
公开(公告)日：2013-04-09
申请号：US12774712
申请日：2010-05-05
申请人： Andrew D. Bailey, III , Yunsang Kim
发明人： Andrew D. Bailey, III , Yunsang Kim
IPC分类号： C03C15/00
CPC分类号： C23G1/24 , C23G1/103 , C23G5/00 , H01L21/02087 , H01L21/0209 , H01L21/321 , H01L21/32134 , H01L21/32136 , H01L21/6708
摘要： The various embodiments described in the specification provide improved mechanisms of removal of unwanted deposits on the bevel edge to improve process yield. The embodiments provide apparatus and methods of treating the bevel edge of a copper plated substrate to convert the copper at the bevel edge to a copper compound that can be wet etched with a fluid at a high etch selectivity in comparison to copper. In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non-volatile copper at substrate bevel edge in a wet etch processing chamber. The plasma treatment at bevel edge allows the copper at bevel edge to be removed at precise spatial control to about 2 mm or below, such as about 1 mm, about 0.5 mm or about 0.25 mm, to the very edge of substrate. In addition, the apparatus and methods described above for bevel edge copper removal do not have the problems of copper etching fluid being splashed on the device regions to cause defects and thinning of copper films. Therefore, device yield can be greatly improved.
摘要翻译： 在说明书中描述的各种实施例提供了改进的机理，去除斜边上的不需要的沉积物以提高工艺产量。 实施例提供了处理镀铜衬底的斜边缘以将斜面边缘处的铜转化为铜化合物的设备和方法，铜化合物可以与铜相比以高蚀刻选择性用流体进行湿蚀刻。 在一个实施方案中，铜化合物对铜的高选择性的湿法蚀刻允许在湿蚀刻处理室中在衬底斜面边缘处去除非挥发性铜。 在斜边缘处的等离子体处理允许在精确空间控制下将斜角边缘处的铜去除至基板的最外边缘约2mm或更小，例如约1mm，约0.5mm或约0.25mm。 此外，上述用于斜边铜剥离的装置和方法不存在铜蚀刻流体溅射在器件区域上以引起铜膜缺陷和变薄的问题。 因此，可以大大提高器件产量。
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公开(公告)号：US08349202B2
公开(公告)日：2013-01-08
申请号：US13300483
申请日：2011-11-18
IPC分类号： C23F1/00
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： Methods for bevel edge etching are provided. One example method is for etching a film on a bevel edge of a substrate in a plasma etching chamber. The method includes providing the substrate on a substrate support in the plasma etching chamber. The plasma etching chamber has a top edge electrode and a bottom edge electrode disposed to surround the substrate support. Then flowing an etching process gas through a plurality of edge gas feeds disposed along a periphery of the gas delivery plate. The periphery of the gas deliver plate is oriented above the substrate support and the bevel edge of the substrate, and the flowing is further directed to a space between the top edge electrode and bottom edge electrode. And, flowing a tuning gas through a center gas feed of the gas delivery plate.
摘要翻译： 提供斜边蚀刻方法。 一种示例性方法是在等离子体蚀刻室中蚀刻衬底的斜边缘上的膜。 该方法包括将基板设置在等离子体蚀刻室中的基板支撑件上。 等离子体蚀刻室具有顶部边缘电极和设置成围绕基板支撑件的底部边缘电极。 然后使蚀刻处理气体流过沿着气体输送板的周边布置的多个边缘气体进料。 气体输送板的周边定位在基板支撑件和基板的斜边缘上方，并且流动进一步被引导到顶部边缘电极和底部边缘电极之间的空间。 并且，使调谐气体流过气体输送板的中心气体进料。
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18.发明授权Dynamic alignment of wafers using compensation values obtained through a series of wafer movements 有权使用通过一系列晶片移动获得的补偿值来动态地对准晶片公开(公告)号：US08185242B2
公开(公告)日：2012-05-22
申请号：US12116897
申请日：2008-05-07
申请人： Scott Wong , Jeffrey Lin , Andrew D. Bailey, III , Jack Chen , Benjamin W. Mooring , Chung Ho Huang
发明人： Scott Wong , Jeffrey Lin , Andrew D. Bailey, III , Jack Chen , Benjamin W. Mooring , Chung Ho Huang
CPC分类号： H01L21/68
摘要： Methods and systems to optimize wafer placement repeatability in semiconductor manufacturing equipment using a controlled series of wafer movements are provided. In one embodiment, a preliminary station calibration is performed to teach a robot position for each station interfaced to facets of a vacuum transfer module used in semiconductor manufacturing. The method also calibrates the system to obtain compensation parameters that take into account the station where the wafer is to be placed, position of sensors in each facet, and offsets derived from performing extend and retract operations of a robot arm. In another embodiment where the robot includes two arms, the method calibrates the system to compensate for differences derived from using one arm or the other. During manufacturing, the wafers are placed in the different stations using the compensation parameters.
摘要翻译： 提供了使用受控系列的晶片移动来优化半导体制造设备中的晶片布置重复性的方法和系统。 在一个实施例中，执行初步站校准以教导与用于半导体制造中的真空传递模块的面连接的每个站的机器人位置。 该方法还校准系统以获得考虑要放置晶片的工位的位置的补偿参数，每个面中的传感器的位置以及执行机器人臂的延伸和缩回操作导出的偏移。 在机器人包括两个臂的另一实施例中，该方法校准系统以补偿从使用一个臂或另一个臂导出的差异。 在制造期间，使用补偿参数将晶片放置在不同的台中。
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19.发明授权公开(公告)号：US08127395B2
公开(公告)日：2012-03-06
申请号：US11429574
申请日：2006-05-05
申请人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxson , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
发明人： Hyungsuk Alexander Yoon , Andrew D. Bailey, III , Jason A. Ryder , Mark H. Wilcoxson , Jeffrey G. Gasparitsch , Randy Johnson , Stephan P. Hoffmann
IPC分类号： B08B7/00
CPC分类号： H01L21/67046 , Y10S134/902
摘要： An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.
摘要翻译： 用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。 刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。 研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。 刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物 底物。
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20.发明申请公开(公告)号：US20120034786A1
公开(公告)日：2012-02-09
申请号：US12850552
申请日：2010-08-04
IPC分类号： H01L21/3065 , C23C16/00 , H01L21/31
CPC分类号： H01L21/3065 , C23C16/4412 , C23C16/45565 , C23C16/45574 , C23C16/45576 , C23C16/50 , H01J37/32091 , H01J37/32449 , H01J37/32834 , H01L21/31
摘要： An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.
摘要翻译： 电极暴露于等离子体产生体积，并且被定义为将射频功率传递到等离子体产生体积，并且包括用于保持衬底暴露于等离子体产生体积的上表面。 气体分配单元设置在等离子体产生体积之上并且基本上平行于电极的取向。 气体分配单元包括用于将等离子体处理气体的输入流沿基本上垂直于电极的上表面的方向引导到等离子体产生体积中的气体供给端口的布置。 气体分配单元还包括通孔的布置，每个通孔延伸穿过气体分配单元以将等离子体产生体积流体连接到排气区域。 每个通孔在基本上垂直于电极的上表面的方向上引导来自等离子体产生体积的排气流。
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