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公开(公告)号：US06522304B2
公开(公告)日：2003-02-18
申请号：US09832557
申请日：2001-04-11
申请人： Arne Watson Ballantine , Daniel Charles Edelstein , James Spiros Nakos , Anthony Kendall Stamper
发明人： Arne Watson Ballantine , Daniel Charles Edelstein , James Spiros Nakos , Anthony Kendall Stamper
IPC分类号： H01Q1300
CPC分类号： H01Q13/0283
摘要： An integrated horn antenna device with an integrated circuit (IC) chip including a metallic horn structure having a wide aperture, a horizontal waveguide with a tapered via that electromagnetically communicates with a vertical waveguide structure to transmit energy to and from an electronic sub-component transceiver device forming part of the IC chip. Another embodiment of the invention comprises a plurality of multiple discrete IC chips having the integrated horn antenna devices incorporated therewith forming a module for data transmissions between these IC chips. Another embodiment of the invention includes additional external waveguide structures such as optical fibers external to the chips, where radiation is aligned between the horn structures and these waveguides. Dual damascene processing is used to fabricate the horn antenna device within the IC chip.
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公开(公告)号：US06437440B1
公开(公告)日：2002-08-20
申请号：US09759258
申请日：2001-01-16
申请人： Cyril Cabral, Jr. , Patrick William Dehaven , Daniel Charles Edelstein , David Peter Klaus , James Manley Pollard, III , Carol L. Stanis , Cyprian Emeka Uzoh
发明人： Cyril Cabral, Jr. , Patrick William Dehaven , Daniel Charles Edelstein , David Peter Klaus , James Manley Pollard, III , Carol L. Stanis , Cyprian Emeka Uzoh
IPC分类号： H01L2940
CPC分类号： H01L21/76846 , H01L21/76843 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L23/53266 , H01L23/5329 , H01L24/11 , H01L24/12 , H01L29/4933 , H01L2224/05124 , H01L2224/05181 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10329 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： An interconnect structure and barrier layer for electrical interconnections is described incorporating a layer of TaN in the hexagonal phase between a first material such as Cu and a second material such as Al, W, and PbSn. A multilayer of TaN in the hexagonal phase and Ta in the alpha phase is also described as a barrier layer. The invention overcomes the problem of Cu diffusion into materials desired to be isolated during temperature anneal at 500° C.
摘要翻译： 描述了用于电互连的互连结构和阻挡层，其结合了诸如Cu的第一材料和诸如Al，W和PbSn的第二材料之间的六方相中的TaN层。 六方相中的TaN多层和α相中的Ta也被描述为阻挡层。 本发明克服了在500℃的温度退火期间将Cu扩散到期望分离的材料中的问题。
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公开(公告)号：US6133136A
公开(公告)日：2000-10-17
申请号：US314003
申请日：1999-05-19
申请人： Daniel Charles Edelstein , Vincent McGahay , Henry A. Nye, III , Brian George Reid Ottey , William H. Price
发明人： Daniel Charles Edelstein , Vincent McGahay , Henry A. Nye, III , Brian George Reid Ottey , William H. Price
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/485 , H01L21/4763
CPC分类号： H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05572 , H01L2224/05647 , H01L2224/13007 , H01L2224/13099 , H01L2224/13111 , H01L23/3192 , H01L2924/0001 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01052 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/3025
摘要： A structure comprising a layer of copper, a barrier layer, a layer of AlCu, and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.
摘要翻译： 包括铜层，阻挡层，AlCu层和焊盘限制层的结构，其中AlCu层和阻挡层插入在铜层和焊盘限制层之间。
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公开(公告)号：US6091273A
公开(公告)日：2000-07-18
申请号：US914857
申请日：1997-08-19
IPC分类号： G11C17/18 , H03K17/687 , H03L5/00
CPC分类号： H03K17/6872 , G11C17/18
摘要： A voltage limiting circuit for fuse technology. The voltage limiting circuit is coupled to the two terminals. The voltage limiting circuit is responsive to a fuse blow through a low impedance sensing circuit, and then minimizes the voltage across the fuse gap that is created by the fuse blow. Thus, the invention prevents dendritic growth and corrosion in copper or similar types of fuses.
摘要翻译： 一种用于保险丝技术的限压电路。 电压限制电路耦合到两个端子。 电压限制电路响应于通过低阻抗感测电路的保险丝熔断，然后使由保险丝熔断产生的熔丝间隙上的电压最小化。 因此，本发明防止了铜或类似类型的保险丝中的树枝状生长和腐蚀。
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公开(公告)号：US5884990A
公开(公告)日：1999-03-23
申请号：US949314
申请日：1997-10-14
申请人： Joachim Norbert Burghartz , Daniel Charles Edelstein , Christopher Vincent Jahnes , Cyprian Emeka Uzoh
发明人： Joachim Norbert Burghartz , Daniel Charles Edelstein , Christopher Vincent Jahnes , Cyprian Emeka Uzoh
IPC分类号： H01F17/00 , H01F17/06 , H01F27/28 , H01F30/16 , H01F41/04 , H01L23/522 , H01F5/00 , H01F7/06
CPC分类号： H01L23/5227 , H01F17/0006 , H01F17/0033 , H01F27/2804 , H01F27/2895 , H01F30/16 , H01F41/042 , H01F41/046 , H01F17/06 , H01L2924/0002 , Y10T29/4902
摘要： High quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies. The spiral inductor has a spiral metal coil deposited in a trench formed in a dielectric layer over a substrate. The metal coil is enclosed in ferromagnetic liner and cap layers, and is connected to an underpass contact through a metal filled via in the dielectric layer. The spiral inductor also includes ferromagnetic cores lines surrounded by the metal spiral coil. A spiral transformer is formed by vertically stacking two spiral inductors, or placing them side-by-side over a ferromagnetic bridge formed below the metal coils and cores lines. The toroidal inductor includes a toroidal metal coil with a core having ferromagnetic strips. The toroidal metal coil is segmented into two coils each having a pair of ports to form a toroidal transformer.
摘要翻译： 公开了与硅非常大规模集成（VLSI）处理兼容的高质量因子（Q）螺旋和环形电感器和变压器，消耗小的IC区域并在高频下操作。 螺旋电感器具有沉积在形成在衬底上的电介质层中的沟槽中的螺旋金属线圈。 金属线圈封装在铁磁衬垫和盖层中，并通过电介质层中的金属填充通孔连接到地下通道接触。 螺旋电感器还包括由金属螺旋线圈包围的铁磁芯线。 通过垂直堆叠两个螺旋电感器或将它们并排放置在形成在金属线圈和芯线下方的铁磁桥上，形成螺旋形变压器。 环形电感器包括具有铁磁条的芯的环形金属线圈。 环形金属线圈被分成两个线圈，每个线圈具有一对端口以形成环形变压器。
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公开(公告)号：US20080179280A1
公开(公告)日：2008-07-31
申请号：US11669496
申请日：2007-01-31
CPC分类号： C09K13/04
摘要： An indium cap layer is formed by blanket depositing indium onto a surface of metallic interconnects separated by interlayer dielectric, and then selectively chemically etching the indium located on the interlayer dielectric leaving an indium cap layer. Etchants containing a strong acid are provided for selectively removing the indium.
摘要翻译： 通过在由层间电介质分离的金属互连件的表面上覆盖沉积铟，然后选择性地化学蚀刻位于层间电介质上的铟而形成铟盖层，留下铟盖层。 提供含有强酸的蚀刻剂用于选择性地除去铟。
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公开(公告)号：US06777809B2
公开(公告)日：2004-08-17
申请号：US10323132
申请日：2002-12-19
申请人： Peter Richard Duncombe , Daniel Charles Edelstein , Robert Benjamin Laibowitz , Deborah Ann Neumayer , Tak Hung Ning , Robert Rosenberg , Thomas Mcarraoll Shaw
发明人： Peter Richard Duncombe , Daniel Charles Edelstein , Robert Benjamin Laibowitz , Deborah Ann Neumayer , Tak Hung Ning , Robert Rosenberg , Thomas Mcarraoll Shaw
IPC分类号： H01L2348
CPC分类号： H01L28/55 , H01L21/31691 , H01L23/5223 , H01L23/5329 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.
摘要翻译： 本文提供介电常数为10或更大的非晶介质材料用于制造集成电路应用中的电容器。 使用低于450℃的温度形成非晶介质材料; 因此，BEOL冶金不会受到不利影响。 本发明的非晶质介电材料表现出良好的共形性和低的漏电流。 还公开了包含本发明的电容器的镶嵌装置。
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公开(公告)号：US06301903B1
公开(公告)日：2001-10-16
申请号：US09495896
申请日：2000-02-02
IPC分类号： F25B1900
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for activating fusible links on a circuit substrate. The circuit substrate is supported in a fixture which is cooled to a below ambient temperature. Cooling of the circuit substrate decreases the absorption of energy by the substrate, permitting a smaller spot size laser beam having a lower wavelength to be employed for interrupting the fusible links. The substrate is cooled by a refrigeration coil in heat transfer with the fixture holding the substrate. Moisture formation is avoided by placing the substrate and laser source in a controlled atmosphere.
摘要翻译： 一种用于激活电路基板上的可熔链节的方法和装置。 电路基板被支撑在被冷却到低于环境温度的固定装置中。 电路基板的冷却减少了基板的能量吸收，允许采用较低波长的较小的点尺寸的激光束来中断熔丝。 基板通过热传递的冷冻盘管冷却，夹具固定基板。 通过将基板和激光源放置在受控的气氛中来避免水分形成。
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19.发明授权Method of forming an integrated circuit spiral inductor with ferromagnetic liner 失效用铁磁衬垫形成集成电路螺旋电感器的方法
公开(公告)号：US6054329A
公开(公告)日：2000-04-25
申请号：US949315
申请日：1997-10-14
申请人： Joachim Norbert Burghartz , Daniel Charles Edelstein , Christopher Vincent Jahnes , Cyprian Emeka Uzoh
发明人： Joachim Norbert Burghartz , Daniel Charles Edelstein , Christopher Vincent Jahnes , Cyprian Emeka Uzoh
CPC分类号： H01L23/5227 , H01F17/0006 , H01F17/0033 , H01F27/2804 , H01F27/2895 , H01F30/16 , H01F41/042 , H01F41/046 , H01F17/06 , H01L2924/0002 , Y10T29/4902
摘要： High quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies. The spiral inductor has a spiral metal coil deposited in a trench formed in a dielectric layer over a substrate. The metal coil is enclosed in ferromagnetic liner and cap layers, and is connected to an underpass contact through a metal filled via in the dielectric layer. The spiral inductor also includes ferromagnetic cores lines surrounded by the metal spiral coil. A spiral transformer is formed by vertically stacking two spiral inductors, or placing them side-by-side over a ferromagnetic bridge formed below the metal coils and cores lines. The toroidal inductor includes a toroidal metal coil with a core having ferromagnetic strips. The toroidal metal coil is segmented into two coils each having a pair of ports to form a toroidal transformer.
摘要翻译： 公开了与硅非常大规模集成（VLSI）处理兼容的高质量因子（Q）螺旋和环形电感器和变压器，消耗小的IC区域并在高频下操作。 螺旋电感器具有沉积在形成在衬底上的电介质层中的沟槽中的螺旋金属线圈。 金属线圈封装在铁磁衬垫和盖层中，并通过电介质层中的金属填充通孔连接到地下通道接触。 螺旋电感器还包括由金属螺旋线圈包围的铁磁芯线。 通过垂直堆叠两个螺旋电感器或将它们并排放置在形成在金属线圈和芯线下方的铁磁桥上，形成螺旋形变压器。 环形电感器包括具有铁磁条的芯的环形金属线圈。 环形金属线圈被分成两个线圈，每个线圈具有一对端口以形成环形变压器。
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公开(公告)号：US20100252775A1
公开(公告)日：2010-10-07
申请号：US12819697
申请日：2010-06-21
CPC分类号： C09K13/04
摘要： An indium cap layer is formed by blanket depositing indium onto a surface of metallic interconnects separated by interlayer dielectric, and then selectively chemically etching the indium located on the interlayer dielectric leaving an indium cap layer. Etchants containing a strong acid are provided for selectively removing the indium.
摘要翻译： 通过在由层间电介质分离的金属互连件的表面上覆盖沉积铟，然后选择性地化学蚀刻位于层间电介质上的铟而形成铟盖层，留下铟盖层。 提供含有强酸的蚀刻剂用于选择性地除去铟。
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