公开(公告)号：US09644268B2

公开(公告)日：2017-05-09

申请号：US13222984

申请日：2011-08-31

申请人： Gregg Higashi ,  Khurshed Sorabji ,  Andreas Hegedus

发明人： Gregg Higashi ,  Khurshed Sorabji ,  Andreas Hegedus

IPC分类号： C23C16/46 ,  F27D11/12 ,  C23C16/458 ,  C23C16/48 ,  C23C16/54 ,  F27B17/00 ,  F27D11/06 ,  H01L21/67 ,  H01L21/677

CPC分类号： C23C16/458 ,  C23C16/483 ,  C23C16/54 ,  F27B17/0025 ,  F27D11/06 ,  F27D11/12 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/67706 ,  H01L21/6776

摘要： A thermal bridge connecting first and second processing zones and a method for transferring a work piece from a first to a second processing zone by way of the thermal bridge are disclosed. A work piece, transportable from the first to the second processing zone on or above the thermal bridge, is maintained at a temperature between the temperatures of the processing zones. The thermal bridge member features a thermally conductive transport member for the work piece supported over an infrared transmissive member that is insulative to heat conduction and convection. The bridge insulative member extends between the first and second processing zones or between reactors. An infrared radiation beam source emits infrared radiation which passes through the bridge insulative member to the transport member, heating the member. In an alternate embodiment, the transport member may be heated directly. A liner member may be mounted above the bridge member to retain heat.

公开(公告)号：US09068278B2

公开(公告)日：2015-06-30

申请号：US12632565

申请日：2009-12-07

申请人： Gang He ,  Andreas Hegedus

发明人： Gang He ,  Andreas Hegedus

IPC分类号： C30B21/02 ,  C30B29/42 ,  C30B29/40 ,  C30B33/06 ,  H01L31/0304 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/18 ,  H01L21/02

CPC分类号： C30B29/42 ,  C30B29/40 ,  C30B33/06 ,  H01L21/02463 ,  H01L21/02546 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Embodiments of the invention are provided for a thin film stack containing a plurality of epitaxial stacks disposed on a substrate and a method for forming such a thin film stack. In one embodiment, the epitaxial stack contains a first sacrificial layer disposed over the substrate, a first epitaxial film disposed over the first sacrificial layer, a second sacrificial layer disposed over the first epitaxial film, and a second epitaxial film disposed over the second sacrificial layer. The thin film stack may further contain additional epitaxial films disposed over sacrificial layers. Generally, the epitaxial films contain gallium arsenide alloys and the sacrificial layers contain aluminum arsenide alloys. Methods provide the removal of the epitaxial films from the substrate by etching away the sacrificial layers during an epitaxial lift off (ELO) process. The epitaxial films are useful as photovoltaic cells, laser diodes, or other devices or materials.

摘要翻译： 提供本发明的实施例用于包含设置在基板上的多个外延叠层的薄膜堆叠和用于形成这种薄膜叠层的方法。 在一个实施例中，外延堆叠包含设置在衬底上的第一牺牲层，设置在第一牺牲层上的第一外延膜，设置在第一外延膜上的第二牺牲层，以及设置在第二牺牲层上的第二外延膜 。 薄膜叠层还可以包含设置在牺牲层上的额外的外延膜。 通常，外延膜含有砷化镓合金，牺牲层含有砷化铝合金。 方法提供了在外延剥离（ELO）工艺期间通过蚀刻掉牺牲层从衬底去除外延膜。 外延膜可用作光伏电池，激光二极管或其它器件或材料。

公开(公告)号：US20130098289A1

公开(公告)日：2013-04-25

申请号：US13444645

申请日：2012-04-11

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

IPC分类号： C30B25/12 ,  C30B25/10 ,  C30B25/18 ,  C30B25/14 ,  C30B25/08 ,  C30B25/02

CPC分类号： C30B25/08 ,  B65G2207/06 ,  C23C16/45519 ,  C23C16/4583 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67109 ,  H01L21/67784

摘要： Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step.

公开(公告)号：US20100209626A1

公开(公告)日：2010-08-19

申请号：US12725318

申请日：2010-03-16

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC分类号： C23C16/46

CPC分类号： C23C16/4583 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784

摘要： Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for heating a substrate or a substrate susceptor within a vapor deposition reactor system includes exposing a lower surface of a substrate susceptor, such as a wafer carrier, to energy emitted from a heating lamp assembly, and heating the substrate susceptor to a predetermined temperature. The heating lamp assembly generally contains a lamp housing disposed on an upper surface of a support base and contains at least one lamp holder, a plurality of lamps extending from the lamp holder, and a reflector disposed on the upper surface of the support base, next to the lamp holder, and below the lamps. The plurality of lamps may have split filament lamps and/or non-split filament lamps for heating inner and outer portions of the substrate susceptor.

摘要翻译： 本发明的实施方案一般涉及用于化学气相沉积（CVD）方法的方法。 在一个实施例中，一种用于加热气相沉积反应器系统内的衬底或衬底基座的方法包括将诸如晶片载体的衬底基座的下表面暴露于从加热灯组件发射的能量，以及加热衬底基座 达到预定温度。 加热灯组件通常包括设置在支撑基座的上表面上的灯壳，并且包含至少一个灯座，从灯座延伸的多个灯和设置在支撑座的上表面上的反射器 到灯座和灯下方。 多个灯可以具有用于加热衬底基座的内部和外部的分离的灯丝灯和/或非分裂灯丝灯。

公开(公告)号：US20100209620A1

公开(公告)日：2010-08-19

申请号：US12725296

申请日：2010-03-16

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC分类号： C23C16/46

CPC分类号： C23C16/4583 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/12 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784

摘要： Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for processing a wafer within a vapor deposition reactor is provided which includes heating at least one wafer disposed on a wafer carrier by exposing a lower surface of the wafer carrier to radiation emitted from a lamp assembly and flowing a liquid through a passageway extending throughout the reactor to maintain the reactor lid assembly at a predetermined temperature, such as within a range from about 275° C. to about 325° C. The method further includes traversing the wafer carrier along a wafer carrier track through at least a chamber containing a showerhead assembly and an isolator assembly and another chamber containing a showerhead assembly and an exhaust assembly, and removing gases from the reactor through the exhaust assembly.

摘要翻译： 本发明的实施方案一般涉及用于化学气相沉积（CVD）方法的方法。 在一个实施例中，提供了一种用于在气相沉积反应器内处理晶片的方法，其包括通过将晶片载体的下表面暴露于从灯组件发射的辐射并使液体流过而使加热至少一个设置在晶片载体上的晶片 通过整个反应器延伸的通道，以将反应器盖组件保持在预定的温度，例如在约275℃至约325℃的范围内。该方法还包括至少通过晶片载体轨道横穿晶片载体 包含喷头组件和隔离器组件的腔室以及包含喷头组件和排气组件的另一腔室，以及通过排气组件从反应器中除去气体。

公开(公告)号：US20100126570A1

公开(公告)日：2010-05-27

申请号：US12605129

申请日：2009-10-23

申请人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

发明人： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC分类号： H01L31/0304 ,  H01L31/18

CPC分类号： H01L31/0735 ,  Y02E10/544

摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 在光伏（PV）器件的一个实施例中，PV器件通常包括与n掺杂层相邻的n掺杂层和p +掺杂层以形成pn层，使得当电磁辐射被吸收时产生电能 由pn层。 n掺杂层和p +掺杂层可以组成厚度小于500nm的吸收层。 与常规太阳能电池相比，这种薄的吸收层可以在PV器件中实现更高的效率和灵活性。

公开(公告)号：US20100001316A1

公开(公告)日：2010-01-07

申请号：US12475418

申请日：2009-05-29

申请人： Thomas Gmitter ,  Gang He ,  Andreas Hegedus

发明人： Thomas Gmitter ,  Gang He ,  Andreas Hegedus

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming a thin film material during an epitaxial lift off process is provided which includes forming an epitaxial material over a sacrificial layer on a substrate, adhering a non-uniform support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process further includes peeling the epitaxial material from the substrate while forming an etch crevice therebetween and bending the support handle to form compression in the epitaxial material during the etching process. In one example, the non-uniform support handle contains a wax film having a varying thickness.

摘要翻译： 本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。 在一个实施例中，提供了在外延剥离工艺期间形成薄膜材料的方法，其包括在衬底上的牺牲层上形成外延材料，将不均匀的支撑手柄附着在外延材料上，以及去除牺牲 在蚀刻过程中。 蚀刻工艺还包括从衬底剥离外延材料，同时在其间形成蚀刻缝隙，并在蚀刻工艺期间弯曲支撑柄以在外延材料中形成压缩。 在一个实例中，不均匀的支撑手柄包含具有变化厚度的蜡膜。

公开(公告)号：US20080025368A1

公开(公告)日：2008-01-31

申请号：US11830845

申请日：2007-07-30

申请人： WOLFGANG ADERHOLD ,  Andreas Hegedus ,  Nir Merry

发明人： WOLFGANG ADERHOLD ,  Andreas Hegedus ,  Nir Merry

IPC分类号： G01J5/00

CPC分类号： G01J5/0022 ,  G01J2005/0081

摘要： Methods and apparatus for measuring substrate uniformity is provided. The invention includes placing a substrate in a thermal processing chamber, rotating the substrate while the substrate is heated, measuring a temperature of the substrate at a plurality of radial locations as the substrate rotates, correlating each temperature measurement with a location on the substrate, and generating a temperature contour map for the substrate based on the correlated temperature measurements. Numerous other aspects are provided.

摘要翻译： 提供了测量基板均匀性的方法和装置。 本发明包括将衬底放置在热处理室中，在衬底被加热的同时旋转衬底，在衬底旋转时在多个径向位置测量衬底的温度，使每个温度测量与衬底上的位置相关，以及 基于相关的温度测量产生用于衬底的温度轮廓图。 提供了许多其他方面。

公开(公告)号：US20070257191A1

公开(公告)日：2007-11-08

申请号：US11779224

申请日：2007-07-17

申请人： Alexander Kadyshevitch ,  Christopher Talbot ,  Dmitry Shur ,  Andreas Hegedus

发明人： Alexander Kadyshevitch ,  Christopher Talbot ,  Dmitry Shur ,  Andreas Hegedus

IPC分类号： G01N23/00

CPC分类号： H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

摘要翻译： 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

公开(公告)号：US09169554B2

公开(公告)日：2015-10-27

申请号：US12725308

申请日：2010-03-16

申请人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC分类号： C23C16/54 ,  C23C14/56 ,  H01L21/677 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48 ,  C30B25/02 ,  C30B25/12 ,  C30B29/40 ,  C30B29/42 ,  C30B35/00 ,  H01L21/67

CPC分类号： C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/12 ,  C30B29/40 ,  C30B29/42 ,  C30B35/005 ,  H01L21/67115 ,  H01L21/67784

摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may independently contain quartz, and in some examples, may be fused together.

摘要翻译： 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了用于在气相沉积反应器系统内悬浮和横穿晶片载体的晶片载体轨道，其包括在其间形成有气体腔的轨道组件的上部和下部。 引导路径沿着上部的上表面延伸并且在引导路径上并且彼此平行的两个侧表面之间延伸。 沿着引导路径的多个气孔从上部的上表面延伸穿过上部并进入气体腔。 在一些示例中，轨道组件的上部和下部可以独立地包含石英，并且在一些示例中可以将其熔合在一起。