公开(公告)号：US06362784B1

公开(公告)日：2002-03-26

申请号：US09424115

申请日：1999-11-19

申请人： Joji Kane ,  Takasi Yosida ,  Noboru Nomura ,  Toyokazu Ikeda ,  Tosiro Sugiyama ,  Hideto Majima

发明人： Joji Kane ,  Takasi Yosida ,  Noboru Nomura ,  Toyokazu Ikeda ,  Tosiro Sugiyama ,  Hideto Majima

IPC分类号： H01Q138

CPC分类号： H01Q1/38 ,  H01Q1/084 ,  H01Q1/32 ,  H01Q1/3275 ,  H01Q1/36 ,  H01Q5/371 ,  H01Q5/378 ,  H01Q5/40 ,  H01Q5/50 ,  H01Q9/0421 ,  H01Q9/14 ,  H01Q9/42 ,  H04N5/44

摘要： The present invention provides an antenna device comprising a conductive substrate and an antenna element located in the proximity of the conductive substrate, in which a portion of the antenna element is formed of a coil or zigzag conductor and an end of the antenna element is connected to the conductive substrate for grounding. In addition, the coil or zigzag conductor is formed at an end of the antenna element and the coil or zigzag conductor and the other end of the antenna element are connected together on an insulator provided on the conductive substrate.

摘要翻译： 本发明提供了一种天线装置，其包括导电基板和位于导电基板附近的天线元件，天线元件的一部分由线圈或之字形导体形成，天线元件的端部连接到 用于接地的导电基板。 此外，线圈或之字形导体形成在天线元件的端部，并且线圈或之字形导体和天线元件的另一端在设置在导电衬底上的绝缘体上连接在一起。

公开(公告)号：US6130626A

公开(公告)日：2000-10-10

申请号：US899483

申请日：1997-07-24

申请人： Joji Kane ,  Takashi Yoshida ,  Noboru Nomura

发明人： Joji Kane ,  Takashi Yoshida ,  Noboru Nomura

IPC分类号： G08G1/01 ,  G08G1/09 ,  G08G1/0967

CPC分类号： G08G1/096716 ,  G08G1/0104 ,  G08G1/09 ,  G08G1/096725 ,  G08G1/09675 ,  G08G1/096775

摘要： A mobile unit support system has a mobile unit and a plurality of sources to be detected installed along a route of movement of said mobile unit, characterized in that said mobile unit includes a storage section for storing in advance the information on the arrangement of said plurality of the sources to be detected, a detection section for detecting said sources to be detected, and an arithmetic processing section for producing predetermined information on the basis of said detection information detected and said arrangement information stored.

摘要翻译： 移动单元支持系统具有沿着所述移动单元的移动路线安装的移动单元和多个待检测的源，其特征在于，所述移动单元包括用于预先存储关于所述多个移动单元的布置的信息的存储部分 要检测的源，用于检测所述检测源的检测部分，以及用于根据检测到的所述检测信息和存储的所述布置信息产生预定信息的算术处理部分。

公开(公告)号：US6087197A

公开(公告)日：2000-07-11

申请号：US227922

申请日：1999-01-08

申请人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

发明人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

IPC分类号： B81B3/00 ,  G01Q70/10 ,  G01Q70/16 ,  G02B6/12 ,  G02B6/124 ,  G11C23/00 ,  H01H1/00 ,  H01L21/308 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/10 ,  H01L33/18 ,  H01L21/20

CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

公开(公告)号：US6033928A

公开(公告)日：2000-03-07

申请号：US333320

申请日：1994-11-02

申请人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

发明人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

IPC分类号： B81B3/00 ,  G01Q70/10 ,  G01Q70/16 ,  G02B6/12 ,  G02B6/124 ,  G11C23/00 ,  H01H1/00 ,  H01L21/308 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/10 ,  H01L33/18 ,  H01L21/32

CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

摘要翻译： 在硅衬底上形成二氧化硅膜，然后通过LPCVD在其上沉积各自具有极小直径的由硅制成的半球状晶粒。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模来蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二点阵掩模用于将硅衬底从其表面蚀刻到指定的深度，从而形成半导体微针的聚集体。 由于每个半导体微针的直径足够小以致量子尺寸效应以及仅具有小的尺寸变化，因此可以获得显着的量子尺寸效应。 因此，通过使用半导体微针的集合体（量化区域），可以构成具有高信息处理功能的半导体装置。

公开(公告)号：US5863338A

公开(公告)日：1999-01-26

申请号：US583662

申请日：1996-01-05

申请人： Yuichiro Yamada ,  Naoki Suzuki ,  Ryuzo Houchin ,  Noboru Nomura ,  Kousaku Yano ,  Yuka Terai

发明人： Yuichiro Yamada ,  Naoki Suzuki ,  Ryuzo Houchin ,  Noboru Nomura ,  Kousaku Yano ,  Yuka Terai

IPC分类号： H01L21/205 ,  B05D1/18 ,  B05D7/24 ,  C23C16/54 ,  H01L21/302 ,  C23C16/00

CPC分类号： B82Y30/00 ,  B05D1/185 ,  B05D1/60 ,  B82Y40/00 ,  C23C16/54

摘要： A forming apparatus of a thin film, includes a processing chamber where a predetermined process is carried out on a surface of a supplied substrate, and a feeding device, which is provided in the processing chamber, for feeding material to form an organic molecular layer including silicon or germanium on the surface of the substrate. A forming method of a thin film, includes steps of forming a thin film on a surface of a supplied substrate in a processing chamber, and feeding material for forming an organic molecular layer including silicon or germanium on the formed thin film on the surface of the substrate through a feeding device in the processing chamber, and then forming the organic molecular layer on the surface of the substrate.

摘要翻译： 薄膜的成形装置包括处理室，其中在所提供的基板的表面上执行预定的处理;以及馈送装置，其设置在处理室中，用于馈送材料以形成有机分子层，所述有机分子层包括 硅或锗在基板的表面上。 薄膜的形成方法包括以下步骤：在处理室中的供给的基板的表面上形成薄膜，以及在所形成的薄膜上形成包含硅或锗的有机分子层的供给材料 基板通过处理室中的进料装置，然后在基板的表面上形成有机分子层。

公开(公告)号：US5576247A

公开(公告)日：1996-11-19

申请号：US97231

申请日：1993-07-27

申请人： Kousaku Yano ,  Masayuki Endo ,  Yuka Terai ,  Noboru Nomura ,  Tomoyasu Murakami ,  Tetsuya Ueda ,  Satoshi Ueda

发明人： Kousaku Yano ,  Masayuki Endo ,  Yuka Terai ,  Noboru Nomura ,  Tomoyasu Murakami ,  Tetsuya Ueda ,  Satoshi Ueda

IPC分类号： H01L21/3105 ,  H01L21/316

CPC分类号： H01L21/3105 ,  Y10S438/974

摘要： A BPSG layer serving as a silicon oxide layer is formed on a semiconductor substrate 1. Formed on the surface of the BPSG layer is a hydrophobic molecular layer comprising hydrophobic groups such as methyl, ethyl and the like, by a silylation reaction (in which silyl having hydrophobic groups such as methyl groups, ethyl groups and the like, is reacted with OH groups, and in which the hydrophobic groups are substituted with H of the OH groups to generate --O--Si(CH.sub.3).sub.3 or the like). The molecular layer prevents the BPSG layer from absorbing moisture.

摘要翻译： 在半导体衬底1上形成用作氧化硅层的BPSG层。在BPSG层的表面上形成疏水性分子层，其通过甲硅烷基化反应（甲基， 具有疏水基团如甲基，乙基等与OH基团反应，并且其中疏水基团被H的OH基团取代以产生-O-Si（CH 3）3等）。 分子层防止BPSG层吸湿。

公开(公告)号：US5312776A

公开(公告)日：1994-05-17

申请号：US977022

申请日：1992-11-16

申请人： Tomoyasu Murakami ,  Michinari Yamanaka ,  Kousaku Yano ,  Masayuki Endo ,  Noboru Nomura ,  Staoshi Ueda ,  Naoto Matsuo ,  Hiroshi Imai ,  Masafumi Kubota

发明人： Tomoyasu Murakami ,  Michinari Yamanaka ,  Kousaku Yano ,  Masayuki Endo ,  Noboru Nomura ,  Staoshi Ueda ,  Naoto Matsuo ,  Hiroshi Imai ,  Masafumi Kubota

IPC分类号： H01L21/02 ,  H01L21/3213 ,  H01L23/532 ,  H01L71/44

CPC分类号： H01L21/02071 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S148/131

摘要： According to the method of preventing the corrosion of metallic wirings of the present invention, aluminium alloy wirings are formed on the surface of a substrate with the use of photoresists, and the photoresists are then removed. Thereafter, HMDS (hexamethyl disilazine) serving as a surface-active agent or its derivative is supplied to the aluminium alloy wirings to form hydrophobic molecular layers on the lateral walls of the aluminium alloy wirings.

摘要翻译： 根据本发明的防止金属配线的腐蚀的方法，使用光致抗蚀剂在基板的表面上形成铝合金布线，然后除去光致抗蚀剂。 此后，将作为表面活性剂或其衍生物的HMDS（六甲基二硅嗪）供给到铝合金布线，以在铝合金布线的侧壁上形成疏水性分子层。

公开(公告)号：US5259922A

公开(公告)日：1993-11-09

申请号：US744583

申请日：1991-08-14

申请人： Atsuhiro Yamano ,  Tokuhiko Tamaki ,  Masafumi Kubota ,  Kenji Harafuji ,  Noboru Nomura

发明人： Atsuhiro Yamano ,  Tokuhiko Tamaki ,  Masafumi Kubota ,  Kenji Harafuji ,  Noboru Nomura

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01J37/32082 ,  H01L21/31116 ,  H01L21/32137

摘要： A dry etching method of a substrate or layer of a semiconductor or other material which includes the steps of providing a metallic chamber having an anode and a cathode which are spaced from each other and mounting the substrate or layer to be etched on the cathode, and applying a potential from a RF power supply to the cathode so that a plasma is generated between the anode and the cathode to produce a bulk region and sheath regions between the cathode and the anode. The frequency of the RF power supply is set at a level higher than 13.56 MHz under which the substrate or layer is subjected to etching with the ions. A polysilicon, SiN or Al alloy layer can be efficiently etched with a Cl-based etching gas.

摘要翻译： 一种半导体或其他材料的衬底或层的干蚀刻方法，其包括提供具有阳极和阴极的金属室，所述金属室彼此间隔开并将待蚀刻的衬底或层安装在阴极上，以及 将来自RF电源的电势施加到阴极，使得在阳极和阴极之间产生等离子体，以在阴极和阳极之间产生体积区域和鞘区域。 RF电源的频率设定在高于13.56MHz的水平，在该水平下，用离子对衬底或层进行蚀刻。 可以用Cl基蚀刻气体有效地蚀刻多晶硅，SiN或Al合金层。

公开(公告)号：US5252430A

公开(公告)日：1993-10-12

申请号：US812839

申请日：1991-12-20

申请人： Kazuhiko Hashimoto ,  Noboru Nomura

发明人： Kazuhiko Hashimoto ,  Noboru Nomura

IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/38 ,  G03C5/00

CPC分类号： G03F7/0045 ,  G03F7/2059 ,  G03F7/38 ,  Y10S430/143

摘要： The fine pattern forming method includes the steps of applying an organic polymer film on a semiconductor substrate and heat treating the same; applying a resin solution (including an acid degradation polymer or an acid reactive monomer, an acid generator capable of generating an acid by irradiation with an electric charged beam, and a silicone resin) on the organic polymer layer and heat treating the same; carrying out a heat treatment after a pattern is written, causing the generated acid to react with the acid degradation polymer or the acid reactive monomer and carrying out a development in an alkaline solution to form a resist pattern; and etching the organic polymer layer using the resist pattern as a mask. The use of the resist layer including the silicone resin, the acid generator, and the acid degradation polymer or the acid reactive monomer enables an accurate fine resist pattern to be formed which has a high sensitivity and dry etching resistance, and in which charging is prevented when a pattern is written by a charged beam.

摘要翻译： 精细图案形成方法包括以下步骤：在半导体衬底上施加有机聚合物膜并对其进行热处理; 在有机聚合物层上涂布树脂溶液（包括酸降解聚合物或酸反应性单体，能够通过带电束照射产生酸的酸产生剂和有机硅树脂）并对其进行热处理; 在图案写入之后进行热处理，使所产生的酸与酸降解聚合物或酸反应性单体反应，并在碱性溶液中进行显影以形成抗蚀剂图案; 并使用抗蚀图案作为掩模蚀刻有机聚合物层。 使用包含硅树脂，酸产生剂，酸降解聚合物或酸反应性单体的抗蚀剂层，能够形成具有高灵敏度和耐干蚀刻性的精确的抗蚀剂图案，并且防止充电 当图案由带电束写入时。

公开(公告)号：US5169494A

公开(公告)日：1992-12-08

申请号：US742550

申请日：1991-08-08

申请人： Kazuhiko Hashimoto ,  Taichi Koizumi ,  Kenji Kawakita ,  Noboru Nomura

发明人： Kazuhiko Hashimoto ,  Taichi Koizumi ,  Kenji Kawakita ,  Noboru Nomura

IPC分类号： G03F7/039 ,  G03F7/09

CPC分类号： G03F7/094 ,  G03F7/039

摘要： The present invention provides a method of forming a fine pattern comprising the steps of forming on a semiconductor substrate an organic polymer film and heat treating it, forming on the organic polymer film an inorganic film and heat treating it, forming on the inorganic film an electron beam resist film and heat treating it, drawing a pattern on the resist film, developing it to form a resist pattern, and etching the inorganic film and the organic polymer film using the resist pattern as a mask, wherein the improvement comprises using one substance selected from the group consisting of a polyphenylene sulfide, a derivative thereof, and a polymer represented by the formula (I): ##STR1## where n is a positive integer, for forming at least one of the organic polymer film and the electron beam resist film. According to the present invention, it is possible to prevent charging by incident electrons, thereby keeping free of field butting and reduction of overlay accuracy, and to form an accurate and vertical fine resist pattern.

摘要翻译： 本发明提供一种形成精细图案的方法，包括以下步骤：在半导体衬底上形成有机聚合物膜并进行热处理，在有机聚合物膜上形成无机膜并进行热处理，在无机膜上形成电子 抗蚀剂膜并对其进行热处理，在抗蚀剂膜上绘制图案，将其显影以形成抗蚀剂图案，并使用抗蚀剂图案作为掩模蚀刻无机膜和有机聚合物膜，其中改进包括使用选择的一种物质 由聚苯硫醚，其衍生物和由式（I）表示的聚合物组成：其中n为正整数，用于形成至少一个有机聚合物膜和电子 光束抗蚀膜。 根据本发明，可以防止入射电子的充电，从而保持无间隙对接和降低覆盖精度，并形成精确和垂直的精细抗蚀剂图案。