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169 条记录 (耗时 0.028 秒)

    Method for manufacturing wiring substrate
    15.
    发明授权
    Method for manufacturing wiring substrate 有权
    制造布线基板的方法

    公开(公告)号：US07521361B2

    公开(公告)日：2009-04-21

    申请号：US11680801

    申请日：2007-03-01

    申请人： Satoshi Kimura ,  Hidemichi Furihata ,  Takeshi Kijima

    发明人： Satoshi Kimura ,  Hidemichi Furihata ,  Takeshi Kijima

    IPC分类号： H01L21/44

    CPC分类号： H05K3/184 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1692 ,  C23C18/1879 ,  C23C18/30 ,  C23C18/31 ,  C23C18/36 ,  H05K2203/0565 ,  H05K2203/1476 ,  Y10S438/903 ,  Y10S438/906

    摘要： A method for manufacturing a wiring substrate by an electroless plating method that precipitates metal without using a plating resist is provided. The method includes the steps of: (a) providing a catalyst layer having a predetermined pattern on a substrate; (b) dipping the substrate in an electroless plating solution to thereby precipitate metal on the catalyst layer to provide a first metal layer; (c) washing a top surface of the substrate with water; and (d) dipping the substrate in an electroless plating solution to thereby precipitate metal on the first metal layer to provide a second metal layer.

    摘要翻译： 提供一种通过化学镀方法制造布线基板的方法，该方法使不使用电镀抗蚀剂的金属沉淀。 该方法包括以下步骤：（a）在衬底上提供具有预定图案的催化剂层; （b）将基板浸渍在化学镀溶液中，从而使金属沉淀在催化剂层上以提供第一金属层; （c）用水洗涤基材的顶表面; 和（d）将基板浸入化学镀溶液中，从而在第一金属层上沉淀金属，以提供第二金属层。

    Memory device including a plurality of capacitors
    16.
    发明授权
    Memory device including a plurality of capacitors 失效
    存储器件包括多个电容器

    公开(公告)号：US07428162B2

    公开(公告)日：2008-09-23

    申请号：US11639174

    申请日：2006-12-14

    申请人： Takeshi Kijima ,  Yasuaki Hamada ,  Tatsuya Shimoda

    发明人： Takeshi Kijima ,  Yasuaki Hamada ,  Tatsuya Shimoda

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22 ,  H01L27/11507 ,  H01L28/56

    摘要： A memory device including: a lower electrode; a ferroelectric layer formed above the lower electrode; a charge compensation layer formed above the ferroelectric layer and including an oxide having a composition differing from a composition of the ferroelectric layer; and upper electrodes formed above the charge compensation layer. The upper electrodes includes: a saturated polarization forming electrode used for forming a domain polarized to saturation in a predetermined direction in a predetermined region of the ferroelectric layer; a writing electrode disposed apart from the saturated polarization forming electrode; and a reading electrode disposed apart from the writing electrode.

    摘要翻译： 一种存储装置，包括：下电极; 形成在下电极上方的铁电层; 电荷补偿层，其形成在所述铁电层的上方，并且具有与所述铁电体层的组成不同的组成的氧化物; 以及形成在电荷补偿层上方的上电极。 上电极包括：饱和极化形成电极，用于在铁电层的预定区域中形成在预定方向上偏振到饱和的畴; 写入电极，与饱和偏振形成电极分开设置; 以及与写入电极分开设置的读取电极。

    Ferroelectric memory device
    18.
    发明授权
    Ferroelectric memory device 失效
    铁电存储器件

    公开(公告)号：US07215567B2

    公开(公告)日：2007-05-08

    申请号：US11216078

    申请日：2005-09-01

    申请人： Masami Hashimoto ,  Takeshi Kijima ,  Junichi Karasawa ,  Mayumi Ueno

    发明人： Masami Hashimoto ,  Takeshi Kijima ,  Junichi Karasawa ,  Mayumi Ueno

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22 ,  G11C11/223

    摘要： To provide a nondestructive-read ferroelectric memory capable of realizing high speed, high integration, and long service life.The present invention is provided with an MFSFET 100 having a ferroelectric thin film at its gate portion, word line 104, bit line 105, and bit line 106 so as to apply voltage equal to or higher than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first write timing and apply voltage equal to or higher than the coercive electric field between the bit line 106 and the word line 104 at second write timing, and applies voltage equal to or lower than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first read timing to detect the current flowing between the both bit lines, and applies voltage equal to or lower than the coercive electric field between the bit line 106 and the word line 104 at second read timing to detect the current flowing between the both bit lines.

    摘要翻译： 提供能够实现高速，高集成度，长使用寿命的非破坏性读取型铁电存储器。 本发明具有在栅极部分具有铁电薄膜的MFSFET100，字线104，位线105和位线106，以施加等于或高于铁电薄膜的矫顽电场的电压 在第一写入定时在位线105和字线104之间施加等于或高于位线106和字线104之间的矫顽电场的电压，并施加等于或小于 在第一读取定时，在位线105和字线104之间的铁电薄膜的矫顽电场，以检测在两个位线之间流动的电流，并施加等于或低于位线106之间的矫顽电场的电压 和第二读取定时的字线104，以检测在两个位线之间流动的电流。

    Ferroelectric memory device, method of driving the same, and driver circuit
    19.
    发明授权
    Ferroelectric memory device, method of driving the same, and driver circuit 失效
    铁电存储器件，其驱动方法和驱动电路

    公开(公告)号：US07142445B2

    公开(公告)日：2006-11-28

    申请号：US10932890

    申请日：2004-09-02

    申请人： Yasuaki Hamada ,  Takeshi Kijima ,  Eiji Natori

    发明人： Yasuaki Hamada ,  Takeshi Kijima ,  Eiji Natori

    IPC分类号： G11C11/22 ,  G11C5/06 ,  G11C5/14 ,  G11C7/00 ,  G11C8/00

    CPC分类号： G11C11/22

    摘要： A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline driver and the bitline driver switch an operation mode of the ferroelectric memory device to a first mode which is one of a data reading mode, a data rewriting mode and a data writing mode, by applying a voltage Vs having a first polarity to at least one ferroelectric memory cell selected from the ferroelectric memory cells. The wordline driver and the bitline driver switch the operation mode to a second mode in which the ferroelectric memory device prevents an imprint by applying a voltage (−Vs/3) having a second polarity which is the reverse of the first polarity to the selected ferroelectric memory cell, after the operation mode has been switched to the first mode at least once, the voltage of the second polarity causing no inversion of data stored in the ferroelectric memory cells.

    摘要翻译： 一种铁电存储器件，其防止压印并包括多个字线，多个位线，多个铁电存储器单元，驱动字线的字线驱动器和驱动位线的位线驱动器。 字线驱动器和位线驱动器通过将具有第一极性的电压Vs施加到第一模式，将铁电存储器件的操作模式切换到作为数据读取模式，数据重写模式和数据写入模式之一的第一模式 选自铁电存储单元的至少一个铁电存储单元。 字线驱动器和位线驱动器将操作模式切换到第二模式，其中铁电存储器件通过将与第一极性相反的具有第二极性的电压（-Vs / 3）施加到所选铁电体来防止压印 存储单元，在操作模式已经被切换到第一模式至少一次之后，第二极性的电压不会导致存储在铁电存储单元中的数据的反转。

    MOCVD apparatus and MOCVD method
    20.
    发明授权
    MOCVD apparatus and MOCVD method 有权
    MOCVD装置和MOCVD方法

    公开(公告)号：US07077911B2

    公开(公告)日：2006-07-18

    申请号：US10376276

    申请日：2003-03-03

    申请人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

    发明人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： C23C16/45508 ,  C23C16/455

    摘要： The invention provides an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by reducing or preventing temperature decrease of a source gas. An MOCVD apparatus according to the present invention supplies a source gas, as a mixture of an MO source gas, with an oxidizing gas to a substrate to thereby form a film. The MOCVD apparatus includes a substrate holder to hold the substrate; a deposition chamber to house the substrate holder; a supply mechanism to supply the source gas to a surface of the substrate; and a heating device to heat the substrate held by the substrate holder. The deposition chamber includes a substrate housing unit to house the substrate holder holding the substrate, and a passage housing unit connected to the substrate housing unit and constituting a passage to supply the source gas to the substrate. The passage has a cross-sectional area that is smaller than the area of a deposition plane of the substrate when the passage housing unit is cut in parallel with the deposition plane of the substrate.

    摘要翻译： 本发明提供一种MOCVD装置和MOCVD方法，其可以通过减少或防止源气体的温度降低来沉积具有令人满意的性能的薄膜。 根据本发明的MOCVD装置将作为MO源气体的混合物的源气体与氧化气体一起提供给基板，从而形成膜。 MOCVD装置包括用于保持基板的基板支架; 沉积室，用于容纳衬底保持器; 供应机构，用于将源气体供应到衬底的表面; 以及加热装置，用于加热由基板保持器保持的基板。 沉积室包括用于容纳保持基板的基板保持器的基板容纳单元，以及连接到基板容纳单元并构成将源气体供应到基板的通道的通道容纳单元。 当通道容纳单元与基板的沉积平面平行地切割时，通道的横截面面积小于基板的沉积平面的面积。