摘要:
In the manufacture of a semiconductor device, a photosensitive layer is deposited to cover an exposed portion of an electrode with the photosensitive layer. The photosensitive layer is then subjected to a photolithography process to partially remove the photosensitive layer covering the electrode. The electrode may be a ball electrode or a bump electrode, and the semiconductor device may be contained in a wafer level package (WLP) or flip-chip package.
摘要:
A ball grid array type board on chip package may include an integrated circuit chip having an active surface that supports a plurality of contact pads. An interposer may be adhered to the active surface of the integrated circuit chip. At least one hole may be provided through the interposer to expose the contact pads. A board, which may have a first surface supporting a plurality of metal lines, may have a second surface adhered to the interposer. The board may have an opening through which the contact pads may be exposed. A plurality of bonding wires may connect the contact pads to the metal lines through the opening.
摘要:
Provided is a method of forming conductors (e.g., metal lines and/or bumps) for semiconductor devices and conductors formed from the same. First and second seed metal layers may be formed. At least one mask may be formed on a portion on which a conductor is to be formed. An exposed portion may be oxidized. The oxidized portion may be removed. A conductive structure may be formed on an upper surface of a portion which is not oxidized. The conductors may be metal lines and/or bumps. The conductive structures may be solder balls.
摘要:
A ball grid array type board on chip package may include an integrated circuit chip having an active surface that supports a plurality of contact pads. An interposer may be adhered to the active surface of the integrated circuit chip. At least one hole may be provided through the interposer to expose the contact pads. A board, which may have a first surface supporting a plurality of metal lines, may have a second surface adhered to the interposer. The board may have an opening through which the contact pads may be exposed. A plurality of bonding wires may connect the contact pads to the metal lines through the opening.
摘要:
A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.
摘要:
A ball grid array type board on chip package may include an integrated circuit chip having an active surface that supports a plurality of contact pads. An interposer may be adhered to the active surface of the integrated circuit chip. At least one hole may be provided through the interposer to expose the contact pads. A board, which may have a first surface supporting a plurality of metal lines, may have a second surface adhered to the interposer. The board may have an opening through which the contact pads may be exposed. A plurality of bonding wires may connect the contact pads to the metal lines through the opening.
摘要:
Provided is a method of forming conductors (e.g., metal lines and/or bumps) for semiconductor devices and conductors formed from the same. First and second seed metal layers may be formed. At least one mask may be formed on a portion on which a conductor is to be formed. An exposed portion may be oxidized. The oxidized portion may be removed. A conductive structure may be formed on an upper surface of a portion which is not oxidized. The conductors may be metal lines and/or bumps. The conductive structures may be solder balls.
摘要:
A method of forming a bump may involve providing a seed layer on a contact pad of a wafer. A shielding layer and a photosensitive mask layer may be formed on the seed layer. The photosensitive mask layer may be exposed and developed to form a mask pattern. An exposed portion of the shielding layer may be removed. The bump may be formed by plating the exposed seed layer.