公开(公告)号：US20190207043A1

公开(公告)日：2019-07-04

申请号：US16325246

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Asad J. Mughal ,  David Hwang ,  Erin C. Young ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L31/0304 ,  H01L33/00 ,  H01L21/02 ,  H01L33/32

CPC classification number: H01L31/03044 ,  H01L21/0254 ,  H01L21/02579 ,  H01L33/007 ,  H01L33/32 ,  Y02E10/544

Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.

公开(公告)号：US20190074404A1

公开(公告)日：2019-03-07

申请号：US15743023

申请日：2016-07-11

Applicant: The Regents of the University of California

Inventor： Erin C. Young ,  Benjamin P. Yonkee ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L31/147

Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

公开(公告)号：US08866126B2

公开(公告)日：2014-10-21

申请号：US13904908

申请日：2013-05-29

Applicant: The Regents of the University of California

Inventor： Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

IPC: H01L33/12 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/34 ,  H01S5/32 ,  H01L33/00 ,  H01S5/343 ,  H01S5/22 ,  H01L33/32 ,  H01L33/16

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2201 ,  H01S5/32 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3425 ,  H01S2301/173

Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

Abstract translation: 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。

公开(公告)号：US11532922B2

公开(公告)日：2022-12-20

申请号：US16652282

申请日：2018-10-02

Applicant: The Regents of the University of California

Inventor： Charles Forman ,  SeungGeun Lee ,  Erin C. Young ,  Jared Kearns ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/02 ,  H01S5/024 ,  H01S5/30 ,  H01S5/343 ,  H01S5/0234 ,  H01S5/0237 ,  H01S5/02355 ,  H01S5/32 ,  H01S5/10

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In—Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

公开(公告)号：US20220181513A1

公开(公告)日：2022-06-09

申请号：US17539345

申请日：2021-12-01

Applicant: The Regents of the University of California

Inventor： Erin C. Young ,  Benjamin P. Yonkee ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/14 ,  H01L21/00 ,  H01L31/0304 ,  C30B23/02 ,  H01L21/02 ,  C30B29/68 ,  H01S5/40 ,  C30B25/20 ,  H01L33/04 ,  C30B29/40 ,  H01S5/30 ,  H01L31/147 ,  H01L33/06

Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

公开(公告)号：US10985285B2

公开(公告)日：2021-04-20

申请号：US16325246

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Asad J. Mughal ,  David Hwang ,  Erin C. Young ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L31/0304 ,  H01L29/207 ,  H01L33/32 ,  H01L33/00 ,  H01L21/02 ,  H01L29/36

Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.

公开(公告)号：US20200244036A1

公开(公告)日：2020-07-30

申请号：US16652282

申请日：2018-10-02

Applicant: The Regents of the University of California

Inventor： Charles Forman ,  SeungGeun Lee ,  Erin C. Young ,  Jared Kearns ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/022 ,  H01S5/02 ,  H01S5/024 ,  H01S5/183 ,  H01S5/30 ,  H01S5/343

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

公开(公告)号：US20180374699A1

公开(公告)日：2018-12-27

申请号：US15773864

申请日：2016-11-01

Applicant: The Regents of the University of California

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/02 ,  H01L29/15 ,  H01L29/20 ,  H01L29/207 ,  H01L29/36 ,  H01L29/885 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0304 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L21/02584 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/365 ,  H01L29/88 ,  H01L29/885 ,  H01L31/03044 ,  H01L31/035236 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).