公开(公告)号：US20170345644A1

公开(公告)日：2017-11-30

申请号：US15601245

申请日：2017-05-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira SHIMIZU ,  Masayuki KITAMURA ,  Yosuke WATANABE

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/26 ,  C23C16/52 ,  H01L21/677 ,  H01L21/67

CPC classification number: H01L21/02115 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/67098 ,  H01L21/67109

Abstract: There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber; supplying a gas containing a boron-containing gas into the process chamber to form a seed layer composed of a boron-based thin film on a surface of the workpiece; and subsequently, supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature lowering gas containing a halogen element and which lowers a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber, heating the hydrocarbon-based carbon source gas to a temperature lower than the pyrolysis temperature to pyrolyze the hydrocarbon-based carbon source gas, and forming the carbon film on the workpiece by a thermal CVD.

公开(公告)号：US20160148801A1

公开(公告)日：2016-05-26

申请号：US14940843

申请日：2015-11-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuo YABE ,  Akira SHIMIZU ,  Kazuhide HASEBE

IPC: H01L21/02 ,  C23C16/455

Abstract: A substrate processing apparatus, that performs oxidization on a surface of a substrate in a vacuum atmosphere formed in a vacuum chamber, includes an atmosphere gas supply part configured to supply an atmosphere gas into the vacuum chamber to form a processing atmosphere containing ozone and hydrogen donor, wherein a concentration of the ozone is above a threshold concentration to trigger chain reaction of decomposition. The substrate processing apparatus further includes an energy supply part configured to supply an energy to the processing atmosphere to oxidize a surface of a substrate with reactive species generated by forcibly decomposing the ozone and hydroxyl radical generated by reaction of the hydrogen donor.

Abstract translation: 在真空室中形成的真空气氛中在基板的表面上进行氧化的基板处理装置包括：气氛气体供给部，被配置为向真空室供给气氛气体，形成含有臭氧和氢供体的处理气氛 其中臭氧的浓度高于阈值浓度以引发分解的链式反应。 基板处理装置还包括能量供给部，该能量供给部被配置为向处理气氛供给能量，以通过强制分解由氢供体产生的臭氧和羟基自由基产生的反应性物质来氧化基板的表面。

公开(公告)号：US20150361550A1

公开(公告)日：2015-12-17

申请号：US14731468

申请日：2015-06-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuo YABE ,  Akira SHIMIZU

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/458

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/45582 ,  C23C16/4584 ,  H01L21/02219 ,  H01L21/0228

Abstract: Film formation apparatus includes: rotation mechanism to repeat alternately placing the substrate in first region and second region; raw material gas supply unit to supply the first region with gaseous raw material; processing space formation member to move up and down to form processing space isolated from the first region; atmosphere gas supply unit to supply atmosphere gas for forming ozone atmosphere where chain decomposition reaction is generated; energy supply unit to forcibly decompose the ozone by supplying energy to the ozone atmosphere and to obtain the oxide by oxidizing the raw material adsorbed to surface of the substrate; buffer region connected to the processing space and being supplied with inert gas; and partition unit to partition the buffer region off from the processing space when the atmosphere gas is supplied to the processing space and to have the buffer region communicate with the processing space when ozone is decomposed.

Abstract translation: 成膜装置包括：将衬底交替放置在第一区域和第二区域中的旋转机构; 原料气供应单元，为第一区域供应气态原料; 处理空间形成构件上下移动以形成与第一区域隔离的处理空间; 气氛气体供给单元，供给形成产生链分解反应的臭氧气氛的气氛气体; 能量供给单元，通过向臭氧气氛供给能量来强制分解臭氧，并通过氧化吸附在基板的表面上的原料来获得氧化物; 缓冲区连接到处理空间并供给惰性气体; 以及分隔单元，当将气氛气体供应到处理空间时，将缓冲区域与处理空间分隔开，并且当臭氧分解时使缓冲区域与处理空间通信。

公开(公告)号：US20150275360A1

公开(公告)日：2015-10-01

申请号：US14666609

申请日：2015-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Akinobu KAKIMOTO ,  Akira SHIMIZU

IPC: C23C16/458 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4588 ,  C23C16/4412 ,  C23C16/45508 ,  C23C16/45551

Abstract: Provided is a vacuum processing apparatus, which includes: a rotatable table installed in a vacuum vessel and configured to horizontally rotate around its center axis; a drive mechanism configured to rotate the rotatable table; a plurality of substrate holding units circumferentially arranged on the rotatable table and configured to obliquely hold a plurality of substrates with a front surface of each of the substrates oriented in a rotation direction of the rotatable table; a heating unit configured to heat the substrates held by the substrate holding units; a processing gas supply unit configured to supply a processing gas onto the substrates held by the substrate holding units; and a vacuum exhaust mechanism configured to vacuum-exhaust the interior of the vacuum vessel.

Abstract translation: 提供一种真空处理装置，其包括：可旋转工作台，安装在真空容器中并构造成围绕其中心轴线水平旋转; 驱动机构，其构造成旋转所述可旋转工作台; 多个基板保持单元，沿圆周方向布置在所述可旋转工作台上，并且被构造成倾斜地保持多个基板，每个基板的前表面沿着所述可旋转台的旋转方向定向; 加热单元，其构造成加热由所述基板保持单元保持的基板; 处理气体供给单元，被配置为将处理气体供给到由所述基板保持单元保持的基板上; 以及真空排气机构，其构造成对真空容器的内部进行真空排气。

公开(公告)号：US20140087564A1

公开(公告)日：2014-03-27

申请号：US14031411

申请日：2013-09-19

Applicant: Tokyo Electron Limited

Inventor： Akira SHIMIZU ,  Yu WAMURA

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/45536 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32669 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111

Abstract: Provided is a plasma processing apparatus, which includes a table unit installed within a processing vessel and configured to place a substrate thereon, a purge gas supply unit configured to supply a process gas into the processing vessel, a plasma generating unit configured to turn the process gas to plasma, a magnetic field forming mechanism installed at a lateral side of the table unit and configured to form magnetic fields in a processing atmosphere in order to move electrons existing in the plasma of the process gas along a surface of the substrate; and an exhaust mechanism configured to exhaust gas from the interior of the processing vessel. The magnetic fields are opened at at-least one point in a peripheral edge portion of the substrate such that a loop of magnetic flux lines surrounding the peripheral edge portion of the substrate is not formed.

Abstract translation: 提供一种等离子体处理装置，其包括安装在处理容器内并被配置为在其上放置基板的台单元，构造成将处理气体供应到处理容器中的净化气体供应单元，等离子体生成单元， 气体到等离子体，磁场形成机构安装在工作台单元的侧面，并且被配置为在处理气氛中形成磁场，以便沿着衬底的表面移动存在于处理气体的等离子体中的电子; 以及排气机构，其构造成从处理容器的内部排出气体。 磁场在基板的周缘部的至少一点处开放，使得不形成围绕基板的周缘部的环形磁通线。

公开(公告)号：US20150348778A1

公开(公告)日：2015-12-03

申请号：US14725147

申请日：2015-05-29

Applicant: TOKYO ELECTRON LIMITED ,  UBE INDUSTRIES, LTD.

Inventor： Akira SHIMIZU ,  Takahiro MIYAHARA ,  Masashi SHIRAI ,  Shinichiro SADAIKE

IPC: H01L21/02

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/45544 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228

Abstract: A method of forming an SiCN film on a surface to be processed of an object, the method including: supplying an Si source gas containing an Si source into a processing chamber having the object accommodated therein; and supplying a gas containing a nitriding agent into the processing chamber after supplying the Si source gas, wherein a compound of nitrogen and carbon is used as the nitriding agent and wherein R1, R2 and R3 in the compound of nitrogen and carbon are linear or branched alkyl groups having 1 to 8 carbon atoms, which may have hydrogen atoms or substituents. Therefore, the SiCN film can be formed while maintaining a satisfactory film forming rate even though the film forming temperature is lowered.

Abstract translation: 一种在物体的被处理表面上形成SiCN膜的方法，所述方法包括：将含有Si源的Si源气体供应到容纳物体的处理室中; 并且在供给Si源气体之后，将含有氮化剂的气体供给到处理室中，其中使用氮和碳的化合物作为氮化剂，并且其中氮和碳化合物中的R 1，R 2和R 3是直链或支链的 具有1至8个碳原子的烷基，其可以具有氢原子或取代基。 因此，即使成膜温度降低，也可以形成SiCN膜，同时保持良好的成膜速度。

公开(公告)号：US20150267292A1

公开(公告)日：2015-09-24

申请号：US14662663

申请日：2015-03-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Cheoljung KIM ,  Toshiyuki IKEUCHI ,  Akira SHIMIZU

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/40 ,  C23C16/52

CPC classification number: C23C16/4405 ,  C23C16/402 ,  C23C16/45525

Abstract: A cleaning method of a silicon oxide film forming apparatus for removing a deposit adhering to the inside of the silicon oxide film forming apparatus after a silicon oxide film is formed on a workpiece by supplying a process gas into a reaction chamber of the silicon oxide film forming apparatus. The cleaning method includes oxidizing the deposit adhering to the inside of the silicon oxide film forming apparatus by supplying an oxidizing gas into the reaction chamber, and cleaning the inside of the silicon oxide film forming apparatus by supplying a cleaning gas into the reaction chamber and removing the oxidized deposit.

Abstract translation: 一种氧化硅膜形成装置的清洁方法，用于在通过将氧化硅膜形成装置的氧化硅膜形成装置的反应室中提供处理气体而在工件上形成氧化硅膜之后去除附着在氧化硅膜形成装置内部的沉积物的沉积物 仪器。 清洗方法包括通过向反应室供给氧化气体来氧化附着在氧化硅膜形成装置内部的沉积物，并且通过向反应室中提供清洁气体并除去 氧化沉积物。

公开(公告)号：US20150107517A1

公开(公告)日：2015-04-23

申请号：US14518151

申请日：2014-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Jun OGAWA ,  Akira SHIMIZU

IPC: C23C16/455 ,  C23C16/509

CPC classification number: C23C16/45582 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45578 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32568

Abstract: A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.

Abstract translation: 一种等离子体处理装置包括：等离子体生成室，其中产生等离子体活性物质;处理室，被配置为容纳沿垂直方向堆叠的处理目标物体;等离子体产生室中产生的等离子体活性物质被供给到处理室; 等离子体源气体供给管，其设置在等离子体产生室的内部并沿垂直方向延伸，等离子体源气体从等离子体源气体供给管的一端引入，并通过形成在等离子体源气体供给管中的气体排出孔排出 以及一对等离子体电极，被配置为对排放到等离子体产生室中的等离子体源气体施加电场。 放置在一对等离子体电极之间的放电区域的尺寸在垂直方向上变化。

公开(公告)号：US20140126980A1

公开(公告)日：2014-05-08

申请号：US14071205

申请日：2013-11-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu WAMURA ,  Akira SHIMIZU

IPC: B65G49/00

CPC classification number: H01L21/67167 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67712

Abstract: Provided is a substrate processing apparatus which includes: first and second vacuum transfer chambers which are partitioned from each other; processing chambers configured to perform a vacuum processing onto substrates; a load lock chamber installed to be sandwiched between the first and second vacuum transfer chambers, and including partition valves installed between the load lock chamber and a normal pressure atmosphere, and between the load lock chamber and each of the first and second vacuum transfer chambers; and substrate mounting tables inside the load lock chamber and configured to move between an upper position at which the substrates are transferred between the load lock chamber and the normal pressure atmosphere, and a lower position at which the substrates are transferred between the load lock chamber and the first or second vacuum transfer chamber.

Abstract translation: 提供了一种基板处理装置，其包括：彼此分隔的第一和第二真空传送室; 处理室，被配置为对基板执行真空处理; 安装在第一和第二真空传送室之间的负载锁定室，并且包括安装在负载锁定室和常压气氛之间以及负载锁定室与第一和第二真空传送室中的每一个之间的分隔阀; 以及衬底安装台，其设置在所述负载锁定室内并且构造成在所述衬底在所述负载锁定室和所述常压气氛之间传递的上部位置和所述衬底在所述负载锁定室和所述正常压力气氛之间传送的下部位置之间移动; 第一或第二真空传送室。

公开(公告)号：US20180286667A1

公开(公告)日：2018-10-04

申请号：US15926405

申请日：2018-03-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki MURAKAMI ,  Akira SHIMIZU

IPC: H01L21/02 ,  H01L21/285

Abstract: There is provided a selective growth method of selectively growing a thin film on an underlayer on which an insulating film and a conductive film are exposed, the method including: preparing a workpiece having the underlayer on which the insulating film and the conductive film are exposed; and selectively growing a silicon-based insulating film on the insulating film by repeating a plurality of times a first step of adsorbing an aminosilane-based gas onto the insulating film and the conductive film and a second step of supplying a reaction gas for reacting with the adsorbed aminosilane-based gas to form the silicon-based insulating film, wherein the conductive film is vaporized by reaction with the reaction gas so that the conductive film is reduced in thickness.