公开(公告)号：US09519227B2

公开(公告)日：2016-12-13

申请号：US14628682

申请日：2015-02-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michael A. Carcasi ,  Mark H. Somervell ,  Joshua S. Hooge ,  Benjamen M. Rathsack ,  Seiji Nagahara

IPC: G03F7/20

CPC classification number: G03F7/70608 ,  G03F7/2022 ,  G03F7/70633 ,  G03F7/70675

Abstract: Methods for measuring photosensitizer concentrations in a photo-sensitized chemically-amplified resist (PS-CAR) patterning process are described. Measured photosensitizer concentrations can be used in feedback and feedforward control of the patterning process and subsequent processing steps. Also described is a metrology target formed using PS-CAR resist, and a substrate including a plurality of such metrology targets to facilitate patterning process control.

Abstract translation: 描述了光敏化学增幅抗蚀剂（PS-CAR）图案化方法中测量光敏剂浓度的方法。 测量的光敏剂浓度可用于图案化过程的反馈和前馈控制以及随后的处理步骤。 还描述了使用PS-CAR抗蚀剂形成的计量目标，以及包括多个这样的计量目标以便于图案化过程控制的基板。

公开(公告)号：US09136110B2

公开(公告)日：2015-09-15

申请号：US14202642

申请日：2014-03-10

Applicant: Tokyo Electron Limited

Inventor： Benjamen M. Rathsack

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  G03F7/40 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01L21/02269 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0337

Abstract: A method of forming a patterned substrate includes casting a layer of a block copolymer having an intrinsic glass transition temperature Tg, on a substrate to form a layered substrate. The method also includes heating the layered substrate at an annealing temperature, which is greater than about 50° C. above the intrinsic glass transition temperature Tg of the block copolymer, in a first atmosphere. The method further includes thermally quenching the layered substrate to a quenching temperature lower than the intrinsic glass transition temperature Tg, at a rate of greater than about 50° C./minute in a second atmosphere. The method further includes controlling an oxygen content in the first and second atmospheres to a level equal to or less than about 8 ppm to maintain the annealing and quenching temperatures below a thermal degradation temperature Td of the block copolymer.

Abstract translation: 形成图案化衬底的方法包括在衬底上浇铸具有本征玻璃化转变温度Tg的嵌段共聚物层以形成层状衬底。 该方法还包括在第一气氛中以高于嵌段共聚物的本征玻璃化转变温度Tg高于约50℃的退火温度加热层状基材。 该方法还包括在第二气氛中以大于约50℃/分钟的速率将层状衬底热淬火至低于本征玻璃化转变温度Tg的淬火温度。 该方法还包括将第一和第二气氛中的氧含量控制在等于或小于约8ppm的水平以保持退火和淬火温度低于嵌段共聚物的热降解温度Td。

公开(公告)号：US20140273534A1

公开(公告)日：2014-09-18

申请号：US14211215

申请日：2014-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michael A. Carcasi ,  Mark H. Somervell ,  Benjamen M. Rathsack

IPC: H01L21/42

CPC classification number: H01L21/02345 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/268 ,  H01L21/28123 ,  H01L22/12 ,  H01L22/20

Abstract: A method of patterning a layered substrate is provided that includes forming a layer of a block copolymer on a substrate; and annealing the layer of the block copolymer to affect microphase segregation such that self-assembled domains are formed by application of an absorption based heating method. Exemplary absorption based heating methods include electromagnetic radiation sources such as broadband flash lamps, light emitting diodes, lasers, or DUV flash lamps. The method may also include a metrology review and an application of the absorption based heating to at least a portion of the layered substrate to refine or modify the microphase segregation.

Abstract translation: 提供一种图案化层叠基板的方法，其包括在基板上形成嵌段共聚物层; 并且使该嵌段共聚物的层退火以影响微相分离，从而通过应用基于吸收的加热方法形成自组装域。 示例性的基于吸收的加热方法包括诸如宽带闪光灯，发光二极管，激光器或DUV闪光灯的电磁辐射源。 该方法还可以包括计量学评估和将吸收基加热应用于层状基质的至少一部分以改善或改变微相分离。

公开(公告)号：US20140273514A1

公开(公告)日：2014-09-18

申请号：US14208130

申请日：2014-03-13

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Benjamen M. Rathsack

IPC: H01L21/033

CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/221 ,  C23C16/45525 ,  G03F7/0002 ,  G03F7/40 ,  G03F7/405 ,  H01J37/317 ,  H01L21/0272

Abstract: A method is provided for patterning a layered substrate that includes loading a substrate into a coater-developer processing system; coating the substrate with a photoresist material layer; patterning the photoresist material layer to form a photoresist pattern; transferring the substrate to a deposition processing system; and depositing a neutral layer over the photoresist pattern and exposed portions of the substrate. The neutral layer can deposited using a gas cluster ion beam (GCIB) process, or an atomic layer deposition (ALD) process, which has minimal topography. The method may further include lifting off a portion of the neutral layer deposited over the photoresist pattern to expose a neutral layer template for subsequent directed self-assembly (DSA) patterning; depositing a DSA material layer over the neutral layer template; baking the DSA material layer to form a DSA pattern; and developing the DSA material layer to expose the final DSA pattern for subsequent feature etching.

Abstract translation: 提供了一种用于图案化层状基板的方法，其包括将基板装载到涂布机显影剂处理系统中; 用光致抗蚀剂材料层涂覆基材; 图案化光致抗蚀剂材料层以形成光致抗蚀剂图案; 将衬底转移到沉积处理系统; 以及在光致抗蚀剂图案和衬底的暴露部分上沉积中性层。 使用气体簇离子束（GCIB）工艺或原子层沉积（ALD）工艺沉积中性层，其具有最小的形貌。 该方法可以进一步包括提起沉积在光致抗蚀剂图案上的中性层的一部分以暴露中性层模板以用于随后的定向自组装（DSA）图案化; 在中性层模板上沉积DSA材料层; 烘烤DSA材料层以形成DSA图案; 并开发DSA材料层以暴露最终的DSA图案用于随后的特征蚀刻。

公开(公告)号：US12165870B2

公开(公告)日：2024-12-10

申请号：US16030153

申请日：2018-07-09

Applicant: Tokyo Electron Limited

Inventor： Steven Scheer ,  Michael A. Carcasi ,  Benjamen M. Rathsack ,  Mark H. Somervell ,  Joshua S. Hooge

IPC: G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films (e.g., photoresist on anti-reflective coatings) on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV or UV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located in the film stack. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

公开(公告)号：US20180315596A1

公开(公告)日：2018-11-01

申请号：US16030153

申请日：2018-07-09

Applicant: Tokyo Electron Limited

Inventor： Steven Scheer ,  Michael A. Carcasi ,  Benjamen M. Rathsack ,  Mark H. Somervell ,  Joshua S. Hooge

IPC: H01L21/027 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20

CPC classification number: H01L21/0276 ,  G03F7/091 ,  G03F7/11 ,  G03F7/203 ,  H01L21/0271

Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films (e.g., photoresist on anti-reflective coatings) on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV or UV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located in the film stack. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

公开(公告)号：US09735026B2

公开(公告)日：2017-08-15

申请号：US14091923

申请日：2013-11-27

Applicant: Tokyo Electron Limited

Inventor： Ian J. Brown ,  Wallace P. Printz ,  Benjamen M. Rathsack

IPC: B08B6/00 ,  B08B7/04 ,  B08B5/00 ,  B08B7/00 ,  H01L21/311 ,  H01L21/67 ,  G03F7/42

CPC classification number: H01L21/31138 ,  G03F7/42 ,  G03F7/423 ,  G03F7/425 ,  H01L21/67051 ,  H01L21/67115

Abstract: Provided is a method for cleaning an ion implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid using two or more nozzles is generated. The substrate is exposed to the treatment liquid comprising a first treatment chemical, the first treatment chemical with a first film thickness, temperature, total flow rate, and first composition. A portion of a surface of the substrate is concurrently irradiated with UV light while controlling the selected plurality of cleaning operating variables in order to achieve the two or more cleaning objectives. The cleaning operating variables comprise two or more of the first temperature, first composition, first film thickness, UV wavelength, UV power, first process time, first rotation speed, duty cycle, and percentage of residue removal are optimized to achieve the two or more cleaning objectives.

公开(公告)号：US20170192357A1

公开(公告)日：2017-07-06

申请号：US15445738

申请日：2017-02-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michael A. Carcasi ,  Joshua S. Hooge ,  Benjamen M. Rathsack ,  Seiji Nagahara

IPC: G03F7/20 ,  G03F7/38 ,  G03F7/039 ,  H01L21/027 ,  G03F7/038 ,  G03F7/26 ,  G03F7/11

CPC classification number: G03F7/2022 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/09 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/2024 ,  G03F7/26 ,  G03F7/30 ,  G03F7/38 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0276

Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located on the substrate. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

公开(公告)号：US09633847B2

公开(公告)日：2017-04-25

申请号：US15093218

申请日：2016-04-07

Applicant: Tokyo Electron Limited

Inventor： Benjamen M. Rathsack ,  Mark H. Somervell

IPC: H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/0273 ,  G03F7/0002 ,  G03F7/40 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method for treating a microelectronic substrate to form a chemical template includes patterning the substrate to form a trench structure with a plurality of trenches of a defined trench width and depositing a photoactive material on the substrate to overfill the trench structure to form a fill portion in the plurality of trenches and an overfill portion above the trench structure. The method further includes exposing the photoactive material to electromagnetic radiation comprising a wavelength that is at least four times greater than the defined trench width such that the overfill portion is modified by the exposure while the electromagnetic radiation fails to penetrate into the plurality of trenches leaving the fill portion unmodified and removing the modified overfill portion of the photoactive material to form a planarized filled trench structure for use as a chemical template for selective reactive ion etching, selective deposition, or directed self-assembly.

公开(公告)号：US20160300756A1

公开(公告)日：2016-10-13

申请号：US15096314

申请日：2016-04-12

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Benjamen M. Rathsack

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/02

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31122 ,  H01L21/31133

Abstract: A method for partially filling an open feature on a substrate includes receiving a substrate having a layer with at least one open feature formed therein, wherein the open feature penetrates into the layer from an upper surface and includes sidewalls extending to a bottom of the open feature. The open feature is overfilled with an organic coating that covers the upper surface of the layer and extends to the bottom of the open feature. The method further includes removing a portion of the organic coating to expose the upper surface of the layer and recessing the organic coating to a pre-determined depth from the upper surface to create an organic coating plug of pre-determined thickness at the bottom of the open feature, and converting the chemical composition of the organic coating plug to create an inorganic plug.

Abstract translation: 用于部分地填充衬底上的开放特征的方法包括接收具有其中形成有至少一个开放特征的层的衬底，其中所述开放特征从上表面渗透到所述层中，并且包括延伸到所述开放特征的底部的侧壁 。 开放的特征被覆盖有覆盖层的上表面并延伸到开放特征的底部的有机涂层。 该方法还包括去除有机涂层的一部分以暴露层的上表面并将有机涂层从上表面凹陷到预定的深度，以在底部形成预定厚度的有机涂层塞 开放特征，并转化有机涂层塞的化学成分以产生无机塞。