公开(公告)号：US10784111B2

公开(公告)日：2020-09-22

申请号：US16345385

申请日：2017-08-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Kazutoshi Iwai

IPC: C23C18/16 ,  C23C18/28 ,  C23C18/30 ,  C23C18/18 ,  H01L21/288

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.

公开(公告)号：US20190267242A1

公开(公告)日：2019-08-29

申请号：US16345385

申请日：2017-08-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Kazutoshi Iwai

IPC: H01L21/288 ,  C23C18/16 ,  C23C18/28

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.

公开(公告)号：US09653350B2

公开(公告)日：2017-05-16

申请号：US14548794

申请日：2014-11-20

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Nobutaka Mizutani ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: B05D3/00 ,  H01L21/768 ,  C23C18/18 ,  B05D3/02 ,  B05D3/10 ,  C23C18/40 ,  C23C18/48

CPC classification number: H01L21/76874 ,  B05D3/002 ,  B05D3/02 ,  B05D3/10 ,  C23C18/1893 ,  C23C18/40 ,  C23C18/48 ,  H01L21/76898

Abstract: Catalytic metal nanoparticles can be attached on a base. A pre-treatment method for plating includes a catalytic particle-containing film forming process of forming a catalytic particle-containing film on a surface of a substrate by supplying, onto the substrate, a catalytic particle solution which is prepared by dispersing the catalytic metal nanoparticles and a dispersing agent in a solvent containing water; a first heating process of removing moisture contained at least in the catalytic particle-containing film by heating the substrate to a first temperature; and a second heating process of polymerizing the dispersing agent to have a sheet shape by heating the substrate to a second temperature higher than the first temperature after the first heating process and fixing the catalytic metal nanoparticles on a base layer by covering the catalytic metal nanoparticles with the sheet-shaped dispersing agent.

公开(公告)号：US20170084480A1

公开(公告)日：2017-03-23

申请号：US15264661

申请日：2016-09-14

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Mitsuaki Iwashita ,  Takashi Tanaka

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/67 ,  H01L23/522 ,  H01J37/32 ,  C23C18/16

CPC classification number: H01L21/67051 ,  C23C18/1619 ,  C23C18/1633 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/02071 ,  H01L21/32136 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/53238

Abstract: A substrate processing apparatus can remove, from a substrate having a copper wiring formed by a dry etching process using an organic etching gas, e.g., one or more kinds of organic etching gases selected from a methane gas, a CF-based gas, a carboxylic acid-based gas containing a methyl group and an alcohol-based gas, an organic polymer which is originated from the organic etching gas and generated in the dry etching process and adheres to a surface of the substrate. In a substrate processing apparatus 1, a first processing unit 4 includes a first cleaning liquid supply unit 43a configured to supply a first cleaning liquid L1 selected from a chemical liquid containing hydrogen peroxide and a chemical liquid containing a polar organic solvent, and the first cleaning liquid L1 is supplied onto a substrate W1 from the first cleaning liquid supply unit 43a.

公开(公告)号：US09552994B2

公开(公告)日：2017-01-24

申请号：US14384465

申请日：2013-02-22

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Nobutaka Mizutani ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: H01L21/288 ,  C23C18/16 ,  H01L21/768

CPC classification number: H01L21/288 ,  C23C18/1619 ,  C23C18/163 ,  C23C18/1669 ,  C23C18/1676 ,  H01L21/76849

Abstract: A plating apparatus 20 includes a substrate holding device 110 configured to hold and rotate the substrate 2; a first discharge device 30 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding device 110; and a top plate 21 that is provided above the substrate 2 and has an opening 22. The first discharge device 30 includes a first discharge unit 33 configured to discharge the plating liquid toward the substrate 2, and the first discharge unit 33 is configured to be moved between a discharge position where the plating liquid is discharged and a standby position where the plating liquid is not discharged. Further, the first discharge unit 33 is configured to be overlapped with the opening 22 of the top plate 21 at the discharge position.

Abstract translation: 电镀装置20包括：基板保持装置110，被配置为保持和旋转基板2; 第一放电装置30，被配置为将电镀液体朝向保持在基板保持装置110上的基板2排出; 以及设置在基板2的上方并具有开口部22的顶板21.第一排出装置30包括：第一排出部33，被配置为朝向基板2排出电镀液，第一排出部33构成为 在排出电镀液体的排出位置与排出液体的待机位置之间移动。 此外，第一排出单元33构造成在排出位置处与顶板21的开口22重叠。

公开(公告)号：US20160240436A1

公开(公告)日：2016-08-18

申请号：US15029655

申请日：2014-10-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Tanaka ,  Nobutaka Mizutani ,  Mitsuaki Iwashita

IPC: H01L21/768 ,  C23C18/31 ,  C23C18/16

CPC classification number: H01L21/76879 ,  C23C18/1633 ,  C23C18/1844 ,  C23C18/31 ,  C23C18/32 ,  H01L21/288 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/76874 ,  H01L23/53257 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal wiring layer can be formed within a recess of a substrate while suppressing the metal wiring layer from being formed at the outside of the recess. A metal wiring layer forming method includes forming a catalyst layer 5 formed of Pd on a tungsten layer W on a bottom surface 3a of the recess 3 of the substrate 2 without forming the catalyst layer 5 on a surface 3b of an insulating layer of the recess 3; and forming a Ni-based metal wiring layer 7 on the catalyst layer 5 of the recess 3.

Abstract translation: 金属布线层可以形成在基板的凹部内，同时抑制金属布线层在凹部的外侧形成。 金属布线层形成方法包括在基板2的凹部3的底面3a上的钨层W上形成由Pd形成的催化剂层5，而不在凹部的绝缘层的表面3b上形成催化剂层5 3; 并在凹部3的催化剂层5上形成Ni基金属布线层7。

公开(公告)号：US20160013102A1

公开(公告)日：2016-01-14

申请号：US14796227

申请日：2015-07-10

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka

IPC: H01L21/768 ,  B05C13/00 ,  B05B3/00 ,  H01L21/288

CPC classification number: H01L21/76874 ,  C23C18/1633 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1696 ,  C23C18/1893 ,  C23C18/40 ,  C23C18/50 ,  C25D7/00 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76898

Abstract: A catalyst layer can be uniformly formed on an entire surface of a substrate and an entire inner surface of a recess. A catalyst layer forming method of forming the catalyst layer on the substrate includes a first supply processing of forming a substrate surface catalyst layer 22A by supplying a catalyst liquid on the entire surface of the substrate 2; and a second supply processing of forming a recess inner surface catalyst layer 22B by supplying the catalyst liquid to a central portion of the substrate 2 while rotating the substrate 2.

Abstract translation: 可以在基板的整个表面和凹部的整个内表面上均匀地形成催化剂层。 在基板上形成催化剂层的催化剂层形成方法包括：通过在基板2的整个表面上供给催化剂液体来形成基板表面催化剂层22A的第一供给处理; 以及通过在旋转基板2的同时将催化剂液体供给到基板2的中心部分而形成凹部内表面催化剂层22B的第二供给处理。

公开(公告)号：US20150099355A1

公开(公告)日：2015-04-09

申请号：US14384465

申请日：2013-02-22

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Nobutaka Mizutani ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: H01L21/288 ,  C23C18/16

CPC classification number: H01L21/288 ,  C23C18/1619 ,  C23C18/163 ,  C23C18/1669 ,  C23C18/1676 ,  H01L21/76849

Abstract: A plating apparatus 20 includes a substrate holding device 110 configured to hold and rotate the substrate 2; a first discharge device 30 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding device 110; and a top plate 21 that is provided above the substrate 2 and has an opening 22. The first discharge device 30 includes a first discharge unit 33 configured to discharge the plating liquid toward the substrate 2, and the first discharge unit 33 is configured to be moved between a discharge position where the plating liquid is discharged and a standby position where the plating liquid is not discharged. Further, the first discharge unit 33 is configured to be overlapped with the opening 22 of the top plate 21 at the discharge position.

Abstract translation: 电镀装置20包括：基板保持装置110，被配置为保持和旋转基板2; 第一放电装置30，被配置为将电镀液体朝向保持在基板保持装置110上的基板2排出; 以及设置在基板2的上方并具有开口部22的顶板21.第一排出装置30包括：第一排出部33，被配置为朝向基板2排出电镀液，第一排出部33构成为 在排出电镀液体的排出位置与排出液体的待机位置之间移动。 此外，第一排出单元33构造成在排出位置处与顶板21的开口22重叠。

公开(公告)号：US20140356539A1

公开(公告)日：2014-12-04

申请号：US14360984

申请日：2012-11-12

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Mitsuaki Iwashita

IPC: C23C18/16 ,  C23C18/42

CPC classification number: C23C18/1678 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1632 ,  C23C18/1651 ,  C23C18/1676 ,  C23C18/1682 ,  C23C18/42 ,  C23C18/54

Abstract: A plating apparatus 20 includes a substrate holding device 110 configured to hold a substrate W; a discharging device 21 configured to discharge a plating liquid 35 toward the substrate W held by the substrate holding device 110; and a plating liquid supplying device 30 connected to the discharging device 21 and configured to supply the plating liquid 35 to the discharging device 21. A gas supplying device 170 is configured to heat a heating gas G having a higher specific heat capacity than air and supply the heated heating gas G toward the substrate W held by the substrate holding device 110. Further, a controller 160 is configured to control at least the discharging device 21, the plating liquid supplying device 30, and the gas supplying device 170.

Abstract translation: 电镀装置20包括：基板保持装置110，被配置为保持基板W; 排出装置21，被配置为将电镀液体35朝向由基板保持装置110保持的基板W排出; 以及连接到排出装置21并被配置为将电镀液体35供给到排出装置21的电镀液供给装置30.气体供给装置170构成为对比比热容量高于空气的加热气体G进行加热， 加热的加热气体G朝向由基板保持装置110保持的基板W。此外，控制器160被配置为至少控制排出装置21，电镀液供给装置30和气体供给装置170。

公开(公告)号：US11171050B2

公开(公告)日：2021-11-09

申请号：US16491678

申请日：2018-02-27

Applicant: Tokyo Electron Limited

Inventor： Koichi Yatsuda ,  Takashi Hayakawa ,  Mitsuaki Iwashita ,  Takashi Tanaka

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method includes a step of performing a selective catalyst treatment by supplying a catalyst solution to an upper surface of an exposed interconnection layer forming a step portion of a stepped shape formed by pair layers stacked to form the stepped shape, the pair layer including an interconnection layer formed on an insulating layer, and a step of selectively growing a metal layer by performing electroless plating on the upper surface of the interconnection layer on which the catalyst treatment is performed.