Abstract:
MOSFET phototransistors, methods of operating the MOSFET phototransistors and methods of making the MOSFET phototransistors are provided. The phototransistors have a buried electrode configuration, which makes it possible to irradiate the entire surface areas of the radiation-receiving surfaces of the phototransistors.
Abstract:
Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The devices are composed of multilayered semiconductor heterostructures. The devices include one or more interfacial layers of a material that allows current tunneling through lattice mismatched heterogeneous junctions at the interfaces between the intrinsic active region and the p-type and/or n-type doped charge injection layers.
Abstract:
Semiconductor heterojunction structures comprising lattice mismatched, single-crystalline semiconductor materials and methods of fabricating the heterojunction structures are provided. The heterojunction structures comprise at least one three-layer junction comprising two layers of single-crystalline semiconductor and a current tunneling layer sandwiched between and separating the two layers of single-crystalline semiconductor material. Also provided are devices incorporating the heterojunction structures, methods of making the devices and method of using the devices.
Abstract:
Photoreceptor scaffolds that can be used for transplantation of organized photoreceptor tissue, with or without retinal pigment epithelial cells, which may improve grafted cell survival, integration, and functional visual rescue are disclosed herein. The scaffolds include a cell support layer having at least one honeycomb-shaped reservoir fluidly connected to a plurality of through-holes and at least one cell in the at least one honeycomb-shaped reservoir.
Abstract:
Patterning methods for forming patterned device substrates are provided. Also provided are devices made using the methods. The methods utilize photoresist features have re-entrant profiles to form a secondary metal hard mask that can be used to pattern an underlying device substrate.
Abstract:
Patterning methods for forming patterned device substrates are provided. Also provided are devices made using the methods. The methods utilize photoresist features have re-entrant profiles to form a secondary metal hard mask that can be used to pattern an underlying device substrate.
Abstract:
Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.
Abstract:
Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).
Abstract:
Photoreceptor scaffolds that can be used for transplantation of organized photoreceptor tissue, with or without retinal pigment epithelial cells, which may improve grafted cell survival, integration, and functional visual rescue are disclosed herein. The scaffolds include a cell support layer having at least one cube-shaped reservoir fluidly connected to a plurality of through-holes and at least one cell in the at least one cube-shaped reservoir.
Abstract:
Patterning methods for forming patterned device substrates are provided. Also provided are devices made using the methods. The methods utilize photoresist features have re-entrant profiles to form a secondary metal hard mask that can be used to pattern an underlying device substrate.