公开(公告)号：US20160204306A1

公开(公告)日：2016-07-14

申请号：US14506975

申请日：2014-10-06

申请人： Wisconsin Alumni Research Foundation

发明人： Zhenqiang Ma ,  Jung-Hun Seo

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/34 ,  H01L33/00

CPC分类号： H01L33/06 ,  H01L21/283 ,  H01L27/156 ,  H01L31/0328 ,  H01L33/0008 ,  H01L33/0016 ,  H01L33/0079 ,  H01L33/0083 ,  H01L33/04 ,  H01L33/28 ,  H01L33/32 ,  H01S5/105 ,  H01S5/18369 ,  H01S5/20 ,  H01S5/3095

摘要： Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The devices are composed of multilayered semiconductor heterostructures. The devices include one or more interfacial layers of a material that allows current tunneling through lattice mismatched heterogeneous junctions at the interfaces between the intrinsic active region and the p-type and/or n-type doped charge injection layers.

摘要翻译： 提供了具有多量子阱（MQW）pin二极管结构的发光器件以及制造和使用器件的方法。 器件由多层半导体异质结构组成。 这些器件包括一种或多种材料的界面层，其允许在本征有源区和p型和/或n型掺杂电荷注入层之间的界面处的电流隧穿通过晶格失配的异质结。

公开(公告)号：US20140264375A1

公开(公告)日：2014-09-18

申请号：US13831449

申请日：2013-03-14

申请人： Wisconsin Alumni Research Foundation

发明人： Zhenqiang Ma ,  Jung-Hun Seo

IPC分类号： H01L29/16

CPC分类号： H01L29/1602 ,  H01L29/267 ,  H01L29/66242 ,  H01L29/7371 ,  H01L29/861 ,  H01L33/04

摘要： Semiconductor heterojunction structures comprising lattice mismatched, single-crystalline semiconductor materials and methods of fabricating the heterojunction structures are provided. The heterojunction structures comprise at least one three-layer junction comprising two layers of single-crystalline semiconductor and a current tunneling layer sandwiched between and separating the two layers of single-crystalline semiconductor material. Also provided are devices incorporating the heterojunction structures, methods of making the devices and method of using the devices.

摘要翻译： 提供包括晶格失配的单晶半导体材料和制造异质结结构的方法的半导体异质结结构。 异质结结构包括至少一个三层结，其包含两层单晶半导体和夹在两层单晶半导体材料之间并分离两层单晶半导体材料的电流隧穿层。 还提供了结合异质结结构的器件，制造器件的方法和使用器件的方法。

公开(公告)号：US11616129B2

公开(公告)日：2023-03-28

申请号：US17123453

申请日：2020-12-16

申请人： Wisconsin Alumni Research Foundation

发明人： Zhenqiang Ma ,  Yei Hwan Jung

IPC分类号： H01L29/423 ,  H01L21/28 ,  H01L21/283 ,  H01L21/308 ,  H01L23/00 ,  H01L29/778 ,  H01L21/768 ,  H01L29/40 ,  H01L29/66 ,  H01L29/20

摘要： Patterning methods for forming patterned device substrates are provided. Also provided are devices made using the methods. The methods utilize photoresist features have re-entrant profiles to form a secondary metal hard mask that can be used to pattern an underlying device substrate.

公开(公告)号：US20210143262A1

公开(公告)日：2021-05-13

申请号：US17123453

申请日：2020-12-16

申请人： Wisconsin Alumni Research Foundation

发明人： Zhenqiang Ma ,  Yei Hwan Jung

IPC分类号： H01L29/423 ,  H01L23/00 ,  H01L21/308 ,  H01L21/283 ,  H01L29/778 ,  H01L21/28 ,  H01L21/768 ,  H01L29/40

摘要： Patterning methods for forming patterned device substrates are provided. Also provided are devices made using the methods. The methods utilize photoresist features have re-entrant profiles to form a secondary metal hard mask that can be used to pattern an underlying device substrate.

公开(公告)号：US10777700B2

公开(公告)日：2020-09-15

申请号：US15612187

申请日：2017-06-02

申请人： Wisconsin Alumni Research Foundation ,  The Research Foundation for the State University of New York

发明人： Zhenqiang Ma ,  Zhenyang Xia ,  Qiaoqiang Gan ,  Haomin Song ,  Zongfu Yu ,  Ming Zhou

IPC分类号： H01L31/11 ,  G01J3/28 ,  G01J3/42 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/113 ,  G01J3/02 ,  G01J1/02 ,  G01J1/42 ,  G01J1/04 ,  H01L31/18 ,  G01J3/12 ,  G01J5/08

摘要： Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.

公开(公告)号：US10734537B2

公开(公告)日：2020-08-04

申请号：US15806724

申请日：2017-11-08

申请人： Wisconsin Alumni Research Foundation

发明人： Zhenqiang Ma ,  Tzu-Hsuan Chang

IPC分类号： H01L31/0352 ,  H01L31/0304 ,  H01L31/11 ,  G01J1/42 ,  H01L31/0224 ,  H01L31/108 ,  G01J1/44

摘要： Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).

公开(公告)号：US20200010799A1

公开(公告)日：2020-01-09

申请号：US16506471

申请日：2019-07-09

申请人： Wisconsin Alumni Research Foundation

发明人： Zhenqiang Ma ,  Juhwan Lee ,  Yei Hwan Jung ,  Michael Phillips ,  David Gamm ,  Shaoqin Gong ,  Inkyu Lee

IPC分类号： C12N5/0793

摘要： Photoreceptor scaffolds that can be used for transplantation of organized photoreceptor tissue, with or without retinal pigment epithelial cells, which may improve grafted cell survival, integration, and functional visual rescue are disclosed herein. The scaffolds include a cell support layer having at least one cube-shaped reservoir fluidly connected to a plurality of through-holes and at least one cell in the at least one cube-shaped reservoir.

公开(公告)号：US20190252506A1

公开(公告)日：2019-08-15

申请号：US15895440

申请日：2018-02-13

申请人： Wisconsin Alumni Research Foundation

发明人： Zhenqiang Ma ,  Yei Hwan Jung

IPC分类号： H01L29/423 ,  H01L23/00 ,  H01L29/778 ,  H01L21/308 ,  H01L21/283

CPC分类号： H01L29/42376 ,  H01L21/283 ,  H01L21/3086 ,  H01L24/05 ,  H01L29/66462 ,  H01L29/778

摘要： Patterning methods for forming patterned device substrates are provided. Also provided are devices made using the methods. The methods utilize photoresist features have re-entrant profiles to form a secondary metal hard mask that can be used to pattern an underlying device substrate.

公开(公告)号：US20180351024A1

公开(公告)日：2018-12-06

申请号：US15612187

申请日：2017-06-02

申请人： Wisconsin Alumni Research Foundation ,  The Research Foundation for the State University of New York

发明人： Zhenqiang Ma ,  Zhenyang Xia ,  Qiaoqiang Gan ,  Haomin Song ,  Zongfu Yu ,  Ming Zhou

IPC分类号： H01L31/113 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032 ,  H01L27/144 ,  G01J3/28 ,  G01J3/42

CPC分类号： H01L31/1136 ,  G01J1/0209 ,  G01J1/0488 ,  G01J1/42 ,  G01J3/0259 ,  G01J3/2803 ,  G01J3/42 ,  G01J5/0862 ,  G01J2001/0481 ,  G01J2003/1213 ,  H01L27/1443 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/1808

摘要： Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.

公开(公告)号：US09955087B1

公开(公告)日：2018-04-24

申请号：US15395905

申请日：2016-12-30

申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION

发明人： Zhenqiang Ma ,  Munho Kim

IPC分类号： H01L21/00 ,  H04N5/33 ,  H01L31/0288 ,  H01L31/18 ,  H01L31/0224 ,  G02B6/122 ,  G02B6/12

CPC分类号： H04N5/33 ,  G02B6/122 ,  G02B2006/12061 ,  G02B2006/12138 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/1085 ,  H01L31/1808

摘要： Photodetectors based on hydrogen-doped, single-crystalline germanium, including waveguide integrated photodetectors for photonic chip applications are provided. Hydrogen doping provides the single-crystalline germanium with increased radiation absorption in the near infrared region of the electromagnetic spectrum, including at wavelengths of 1550 nm and above.