Field emission type cathode structure for cathode-ray tube
    14.
    发明授权
    Field emission type cathode structure for cathode-ray tube 失效
    阴极射线管的场发射型阴极结构

    公开(公告)号:US5543680A

    公开(公告)日:1996-08-06

    申请号:US325170

    申请日:1994-10-20

    CPC classification number: H01J29/485 H01J29/04 H01J2201/30426

    Abstract: In a field emission type cathode structure for a CRT, a grid electrode has an opening at a position corresponding to a position of a bonding wire for connecting a gate electrode to a lead connected to a power supply for a gate voltage. A bonding tool moves vertically through the opening of the grid electrode to bond the bonding wire on the gate electrode and the lead.

    Abstract translation: 在CRT的场致发射型阴极结构中,栅电极在对应于用于将栅电极连接到与栅极电压的电源连接的引线的接合线的位置处的位置处具有开口。 焊接工具通过栅电极的开口垂直移动,以将接合线接合在栅电极和引线上。

    Field emission element
    16.
    发明授权
    Field emission element 失效
    场发射元件

    公开(公告)号:US5469014A

    公开(公告)日:1995-11-21

    申请号:US829251

    申请日:1992-02-03

    Abstract: A field emission element including a gate and an emitter and capable of preventing any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.

    Abstract translation: 一种场致发射元件,包括栅极和发射极,并且能够防止在发射极的顶端上形成任何元素氧化物层,以防止发射电流降低,操作不稳定和噪声增加。 栅极具有由氧键合强度高于发光体的至少尖端表面的材料的表面形成的表面,从而可以通过栅极上的吸附捕获氧原子和进入栅极的分子,以防止 在发射体上形成任何氧化物层。 当除尖端表面之外的发射体的一部分由氧结合强度高于尖端表面材料的材料形成时,在发射极的顶端表面上形成任何氧化物层都被最小化。

    Field emission light source
    19.
    发明授权
    Field emission light source 失效
    场发射光源

    公开(公告)号:US06573643B1

    公开(公告)日:2003-06-03

    申请号:US09677361

    申请日:2000-10-02

    Abstract: A field emission cathode for use in flat panel displays is described including a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. Use of the cathode to form a computer screen is also described along with the use of the cathode to form a fluorescent light source.

    Abstract translation: 描述了用于平板显示器的场发射阴极,其包括沉积在导电材料上以形成发射位点的导电材料层和用作低有效功函数材料的非晶金刚石膜层。 发射部位各自含有至少两个具有不同电子亲和力的亚区域。 还描述了使用阴极形成计算机屏幕,同时使用阴极来形成荧光光源。

    Field emission device and method for the conditioning thereof
    20.
    发明授权
    Field emission device and method for the conditioning thereof 失效
    场致发射装置及其调理方法

    公开(公告)号:US06573642B1

    公开(公告)日:2003-06-03

    申请号:US09491357

    申请日:2000-01-26

    CPC classification number: H01J1/3044 H01J2201/30426

    Abstract: A field emission device (100) includes an electron emitter structure (105) having a deuteride layer (108), which defines a surface (109) of electron emitter structure (105). Deuteride layer (108) is disposed upon an electron emitter (106), which is made from a metal. Deuteride layer (108) is a deuteride of the metal from which electron emitter (106) is made. A method for conditioning field emission device (100) includes the step of providing a contaminated cathode structure (137), which has a contaminated emitter structure (138). The method further includes the step of causing deuterium to react with a metal oxide layer (140) of emitter structure (138), so that the deuterium replaces the oxygen of metal oxide layer (140).

    Abstract translation: 场发射器件(100)包括具有限定电子发射器结构(105)的表面(109)的氘化层(108)的电子发射器结构(105)。 氘化层(108)设置在由金属制成的电子发射器(106)上。 氘化层(108)是制造电子发射体(106)的金属的氘化物。一种用于调节场发射装置(100)的方法包括提供污染的阴极结构(137)的步骤,该污染阴极结构具有污染的发射体结构 (138)。 该方法还包括使氘与发射极结构(138)的金属氧化物层(140)反应的步骤,使得氘代替金属氧化物层(140)的氧。

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