Electron Beam Irradiation Device
    12.
    发明申请
    Electron Beam Irradiation Device 有权
    电子束照射装置

    公开(公告)号:US20090127473A1

    公开(公告)日:2009-05-21

    申请号:US11920420

    申请日:2005-11-18

    Abstract: An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.

    Abstract translation: 本发明的电子束照射装置包括:用于产生二维光图案13的投影仪8; 微通道板11,用于(i)基于已经进入的光图案13产生电子束阵列,(ii)放大电子束阵列,和(iii)发射电子束阵列作为放大的电子束阵列14; 以及用于会聚放大电子束阵列14的电子束透镜部分12.该电子束照射装置能够通过使用电子束的照射通过更精细的处理来制造其性能得到改善的半导体器件。 此外,电子束照射装置允许成本降低,因为该装置允许使用二维图案的集体照射。

    Adjustment in a MAPPER system
    14.
    发明授权
    Adjustment in a MAPPER system 失效
    调整MAPPER系统

    公开(公告)号:US07019312B2

    公开(公告)日:2006-03-28

    申请号:US10600953

    申请日:2003-06-20

    Applicant: Pieter Kruit

    Inventor: Pieter Kruit

    Abstract: The present invention relates to a lithography system comprising: means for generating a plurality of light beamlets, and an electron source, arranged to be illuminated by said light beamlets, said electron source comprising a plurality of converter elements at an element distance from each other for converting a light beamlet impinging onto it into an electron beamlet directed towards and focussed on an object plane, said lithography system further comprising control means for manipulating the mutual positions of the light beamlets with respect to the converter elements. These control means can be of optical, thermal, mechanical or magnetical nature, and work on for instance the micro lens array, the converter plate, and the mask.

    Abstract translation: 光刻系统技术领域本发明涉及一种光刻系统,包括:用于产生多个光束的装置和被所述光束照射的电子源,所述电子源包括彼此间距离的多个转换器元件, 将照射到其上的光束转换成指向并聚焦在物平面上的电子束,所述光刻系统还包括用于操纵光束相对于转换器元件的相互位置的控制装置。 这些控制装置可以具有光学,热学,机械或磁性,并且例如工作在微透镜阵列,转换器板和掩模上。

    Field emission photo-cathode array for lithography system and lithography system provided with such an array
    15.
    发明申请
    Field emission photo-cathode array for lithography system and lithography system provided with such an array 审中-公开
    具有这种阵列的光刻系统和光刻系统的场发射光阴极阵列

    公开(公告)号:US20030178583A1

    公开(公告)日:2003-09-25

    申请号:US10392228

    申请日:2003-03-18

    Abstract: The present invention relates to the use of an electron source in a lithography system for producing a plurality of electron beams directed towards an object to be processed, said electron source comprising a plurality of field emitters, characterized in that said electron source comprises a semiconductor layer with a plurality of tips, said use including the steps of: producing a plurality of light spots on said electron source, producing one light spot on one field emitter; exciting electrons to a conduction band (Ec) by light from a light spot within said field emitter by a photo-electric effect; accelerating said electrons in said conduction band (Ec) towards said tips and tunnelling them outside tips in order to generate electrons for said plurality of electron beams, causing tips to generate electrons for said electron beam having a spot smaller than 100 nm on an object to be processed, each spot of light triggering an electron beam from one tip.

    Abstract translation: 本发明涉及在光刻系统中使用电子源来制造指向待处理物体的多个电子束,所述电子源包括多个场致发射体,其特征在于,所述电子源包括半导体层 具有多个尖端,所述用途包括以下步骤:在所述电子源上产生多个光点,在一个场发射器上产生一个光斑; 通过光电效应使来自所述场发射器内的光点的光激发电子到导带(Ec); 将所述导带(Ec)中的所述电子加速朝向所述尖端并将其隧穿到外部尖端,以便为所述多个电子束产生电子,从而使得针对具有小于100nm的点的所述电子束产生电子, 被处理,每个光点从一个尖端触发电子束。

    Laser stimulated high current density photoelectron generator and method
of manufacture
    17.
    发明授权
    Laser stimulated high current density photoelectron generator and method of manufacture 失效
    激光激发高电流密度光电发生器及其制造方法

    公开(公告)号:US4460831A

    公开(公告)日:1984-07-17

    申请号:US525514

    申请日:1983-08-22

    Abstract: An electron beam generator particularly adapted for direct-write semiconductor lithography applications is disclosed which includes a photoemissive cathode, a modulable laser for illuminating the photoemissive cathode, and light optics to create an optical pattern on the cathode. The photoemissive cathode is composed of a light transmissive substrate onto which is deposited an optically semitransparent, electrically conductive film. This film in turn is coated with a thin layer of a photoemissive substance such as cesium antimonide so that the photoemissive cathode emits an intense and substantially monochromatic beam of electrons upon laser light illumination. The emitted electron beam is configured in accordance with the optical pattern created on the cathode, and in passing through successive electron optical devices is further shaped and sized for use, for example, in lithographically generating very large scale integrated (VLSI) circuits on semiconductors.

    Abstract translation: 公开了一种特别适用于直写半导体光刻应用的电子束发生器,其包括光发射阴极,用于照射光发射阴极的可调激光器,以及用于在阴极上产生光学图案的光学光学器件。 光发射阴极由其上沉积有光学半透明导电膜的透光基板组成。 该薄膜依次涂覆有诸如锑化锑的光发射物质的薄层,使得在激光照明下,光发射阴极发射强烈且基本上单色的电子束。 发射的电子束根据在阴极上产生的光学图案来配置,并且通过连续的电子光学器件进一步成型和定尺寸以用于例如在半导体上平版印刷生成非常大规模的集成(VLSI)电路。

    INTEGRATED PHOTOEMISSION SOURCES AND SCALABLE PHOTOEMISSION STRUCTURES
    19.
    发明申请
    INTEGRATED PHOTOEMISSION SOURCES AND SCALABLE PHOTOEMISSION STRUCTURES 有权
    一体化摄影源和可扩展的摄影结构

    公开(公告)号:US20160181050A1

    公开(公告)日:2016-06-23

    申请号:US14976083

    申请日:2015-12-21

    Inventor: Ravi K. Bonam

    Abstract: A scalable, integrated multi-level photoemitter device of tapered design and method of manufacture using conventional CMOS manufacturing techniques. The photoemitter device has a tapered multi-level structure formed in a material layer of a substrate, each level comprising a layer of photoemissive material and a connecting portion, said connecting portion for connecting to an adjacent photoemissive material layer of a next successive level. A first photoemissive material layer of a first level is of a configuration having a first length or width dimension; and each successive layer includes a photoemissive material layer of successively smaller length or width dimensions

    Abstract translation: 采用传统CMOS制造技术的可扩展的集成多级光电发生器,采用锥形设计和制造方法。 光发射器装置具有形成在衬底的材料层中的锥形多层结构,每层包括一层光发射材料和连接部分,所述连接部分用于连接到下一个连续级别的相邻发光材料层。 第一级的第一光发射材料层是具有第一长度或宽度尺寸的构造; 并且每个连续层包括连续更小的长度或宽度尺寸的光发射材料层

    Device and method for electron emission and device including such an electron emission system
    20.
    发明授权
    Device and method for electron emission and device including such an electron emission system 有权
    用于电子发射的装置和方法以及包括这种电子发射系统的装置

    公开(公告)号:US09263229B2

    公开(公告)日:2016-02-16

    申请号:US14378386

    申请日:2013-02-15

    Abstract: A device and method for emitting electrons by a field effect. The device (10) includes a vacuum chamber (12) including a tip (14) having an end (18) and forming a cold cathode, an extracting anode (16), components adapted for generating a potential difference between the tip (14) and the anode (16); an electromagnetic wave source (22) outside the chamber (12); a system (24) for forwarding the electromagnetic wave emitted by the electromagnetic wave source from the outside to the inside of the chamber as far as the vicinity of the tip (14); a system (26) for focusing the electromagnetic wave, laid out inside the chamber (12); and a system (28) for aligning the electromagnetic wave outside the chamber and adapted for allowing alignment of the electromagnetic wave focused by the focusing system on the end of the tip.

    Abstract translation: 一种通过场效应发射电子的装置和方法。 装置(10)包括一个真空室(12),该真空室包括具有端部(18)并形成冷阴极的尖端(14),提取阳极(16),适于产生尖端(14) 和阳极(16); 在室(12)外部的电磁波源(22); 一个系统(24),用于将电磁波源发射的电磁波从外部传送到腔室的内部,直到尖端(14)附近; 用于聚焦放置在腔室(12)内的电磁波的系统(26); 以及用于将所述电磁波对准所述室外并适于允许由所述聚焦系统聚焦的所述电磁波对准所述尖端的端部的系统(28)。

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