Abstract:
An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object.
Abstract:
An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.
Abstract:
A photocathode is capable of generating an electron beam from incident light. The photocathode comprises a light permeable support having a light receiving surface and an opposing surface. A Group III nitride layer is provided on the opposing surface of the support. The Group III nitride layer comprises at least one Group III element and nitrogen. An alkali halide layer is provided on the Group III nitride layer. The alkali halide can be a cesium halide, such as cesium bromide or iodide.
Abstract:
The present invention relates to a lithography system comprising: means for generating a plurality of light beamlets, and an electron source, arranged to be illuminated by said light beamlets, said electron source comprising a plurality of converter elements at an element distance from each other for converting a light beamlet impinging onto it into an electron beamlet directed towards and focussed on an object plane, said lithography system further comprising control means for manipulating the mutual positions of the light beamlets with respect to the converter elements. These control means can be of optical, thermal, mechanical or magnetical nature, and work on for instance the micro lens array, the converter plate, and the mask.
Abstract:
The present invention relates to the use of an electron source in a lithography system for producing a plurality of electron beams directed towards an object to be processed, said electron source comprising a plurality of field emitters, characterized in that said electron source comprises a semiconductor layer with a plurality of tips, said use including the steps of: producing a plurality of light spots on said electron source, producing one light spot on one field emitter; exciting electrons to a conduction band (Ec) by light from a light spot within said field emitter by a photo-electric effect; accelerating said electrons in said conduction band (Ec) towards said tips and tunnelling them outside tips in order to generate electrons for said plurality of electron beams, causing tips to generate electrons for said electron beam having a spot smaller than 100 nm on an object to be processed, each spot of light triggering an electron beam from one tip.
Abstract:
An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. The photocathode is patterned to define emission areas. A patterned mask may be located on the emission surface of the active layer, may be buried within the active layer or may be located between the active layer and the substrate.
Abstract:
An electron beam generator particularly adapted for direct-write semiconductor lithography applications is disclosed which includes a photoemissive cathode, a modulable laser for illuminating the photoemissive cathode, and light optics to create an optical pattern on the cathode. The photoemissive cathode is composed of a light transmissive substrate onto which is deposited an optically semitransparent, electrically conductive film. This film in turn is coated with a thin layer of a photoemissive substance such as cesium antimonide so that the photoemissive cathode emits an intense and substantially monochromatic beam of electrons upon laser light illumination. The emitted electron beam is configured in accordance with the optical pattern created on the cathode, and in passing through successive electron optical devices is further shaped and sized for use, for example, in lithographically generating very large scale integrated (VLSI) circuits on semiconductors.
Abstract:
A scalable, integrated multi-level photoemitter device of tapered design and method of manufacture using conventional CMOS manufacturing techniques. The photoemitter device has a tapered multi-level structure formed in a material layer of a substrate, each level comprising a layer of photoemissive material and a connecting portion, said connecting portion for connecting to an adjacent photoemissive material layer of a next successive level. A first photoemissive material layer of a first level is of a configuration having a first length or width dimension; and each successive layer includes a photoemissive material layer of successively smaller length or width dimensions
Abstract:
A scalable, integrated multi-level photoemitter device of tapered design and method of manufacture using conventional CMOS manufacturing techniques. The photoemitter device has a tapered multi-level structure formed in a material layer of a substrate, each level comprising a layer of photoemissive material and a connecting portion, said connecting portion for connecting to an adjacent photoemissive material layer of a next successive level. A first photoemissive material layer of a first level is of a configuration having a first length or width dimension; and each successive layer includes a photoemissive material layer of successively smaller length or width dimensions
Abstract:
A device and method for emitting electrons by a field effect. The device (10) includes a vacuum chamber (12) including a tip (14) having an end (18) and forming a cold cathode, an extracting anode (16), components adapted for generating a potential difference between the tip (14) and the anode (16); an electromagnetic wave source (22) outside the chamber (12); a system (24) for forwarding the electromagnetic wave emitted by the electromagnetic wave source from the outside to the inside of the chamber as far as the vicinity of the tip (14); a system (26) for focusing the electromagnetic wave, laid out inside the chamber (12); and a system (28) for aligning the electromagnetic wave outside the chamber and adapted for allowing alignment of the electromagnetic wave focused by the focusing system on the end of the tip.