利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

39 条记录 (耗时 0.028 秒)

    Method for depositing coatings on the interior surfaces of tubular walls
    12.
    发明授权
    Method for depositing coatings on the interior surfaces of tubular walls 有权
    在管壁内表面上沉积涂层的方法

    公开(公告)号：US06764714B2

    公开(公告)日：2004-07-20

    申请号：US10167189

    申请日：2002-06-11

    申请人： Ronghua Wei ,  Christopher Rincon ,  James Arps

    发明人： Ronghua Wei ,  Christopher Rincon ,  James Arps

    IPC分类号： C23C1606

    CPC分类号： F41A21/04 ,  B05D1/62 ,  B05D7/22 ,  B05D7/52 ,  B05D2254/04 ,  Y10T428/30

    摘要： Methods for coating the interior surface of tubular structures having high aspect ratios and tubular structures produced by such methods. The interior surface of the tubular structure is coated by inducing a magnetic field having a given magnitude around a circumference along a length of the tubular structure, applying a bias at a given voltage to the tubular structure, and exposing the interior surface to a precursor material to deposit the precursor material onto the interior surface of the tubular structure.

    摘要翻译： 用于涂覆具有高纵横比的管状结构的内表面的方法和通过这些方法制造的管状结构。 管状结构的内表面通过沿管状结构的长度诱导围绕圆周具有给定大小的磁场，将给定电压的偏压施加到管状结构，并将内表面暴露于前体材料 以将前体材料沉积到管状结构的内表面上。

    Method for depositing metal films onto substrate surfaces utilizing a chamfered ring support
    13.
    发明授权
    Method for depositing metal films onto substrate surfaces utilizing a chamfered ring support 失效
    使用倒角环支撑体将金属膜沉积到基板表面上的方法

    公开(公告)号：US06660330B2

    公开(公告)日：2003-12-09

    申请号：US09829648

    申请日：2001-04-10

    申请人： Peter S. Locke ,  Sandra Guy Malhotra ,  Fenton Read McFeely ,  Andrew Herbert Simon ,  John Jacob Yurkas

    发明人： Peter S. Locke ,  Sandra Guy Malhotra ,  Fenton Read McFeely ,  Andrew Herbert Simon ,  John Jacob Yurkas

    IPC分类号： C23C1606

    CPC分类号： C23C16/466 ,  C23C16/481 ,  H01L21/28556 ,  H01L21/67109

    摘要： The present invention relates to a method and apparatus for ensuring uniform and reproducible heating of a deformation-tolerant substrate during low-pressure chemical vapor deposition (CVD) of a metal film on a surface of the substrate. The uniform and reproducible heating of the substrate is achieved in the present invention by positioning the substrate on a beveled surface of a chamfered ring which is located above the heating element in a CVD reactor chamber. The space between heating element, chamfered ring and bottom surface of the substrate define a cavity between the substrate and heating element that ensures that the substrate is heated by radiative means rather than direct contact.

    摘要翻译： 本发明涉及一种在基板表面上的金属膜的低压化学气相沉积（CVD）期间确保变形耐受基板的均匀可重复加热的方法和装置。 在本发明中通过将衬底定位在位于CVD反应器室中的加热元件上方的倒角环的斜面上来实现衬底的均匀和可再现的加热。 加热元件，倒角环和衬底底面之间的空间限定了衬底和加热元件之间的空腔，确保衬底被辐射装置加热而不是直接接触。

    Sequential chemical vapor deposition
    14.
    发明授权
    Sequential chemical vapor deposition 有权

    公开(公告)号：US06616986B2

    公开(公告)日：2003-09-09

    申请号：US09974162

    申请日：2001-10-09

    申请人： Arthur Sherman

    发明人： Arthur Sherman

    IPC分类号： C23C1606

    CPC分类号： C23C16/45531 ,  C23C16/452 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C30B25/14

    摘要： The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

    Method of forming an improved aluminide bond coat for a thermal barrier coating system
    15.
    发明授权
    Method of forming an improved aluminide bond coat for a thermal barrier coating system 失效
    形成用于热障涂层系统的改进的铝化物粘结涂层的方法

    公开(公告)号：US06482469B1

    公开(公告)日：2002-11-19

    申请号：US09546518

    申请日：2000-04-11

    申请人： Irene T. Spitsberg ,  Ramgopal Darolia

    发明人： Irene T. Spitsberg ,  Ramgopal Darolia

    IPC分类号： C23C1606

    CPC分类号： C23C14/588 ,  C23C4/02 ,  C23C10/60 ,  C23C14/025 ,  C23C14/028 ,  C23C14/083 ,  C23C28/00

    摘要： A thermal barrier coating (TBC) system and method for improving the thermal fatigue life of a thermal barrier coating. The invention entails modifying the surface morphology of an aluminide bond coat that adheres the thermal barrier coating to a substrate of a superalloy component. The aluminide bond coat has columnar grains, such that grain boundaries are exposed at the surface of the bond coat and define ridges. The surface of the bond coat is then treated so that a sufficient amount of material is removed from the grain boundary ridges and other surface peaks to flatten the bond coat surface, i.e., the ridges and peaks are replaced with flattened surfaces that are nearly parallel to the diffusion zone of the bond coat. By removing these surface irregularities, it is believed that a more stable bond coat surface is created where the critical alumina-bond coat interface will exist following a thermal treatment, such as TBC deposition.

    摘要翻译： 一种用于改善热障涂层的热疲劳寿命的隔热涂层（TBC）系统和方法。 本发明需要改变将热障涂层粘附到超级合金部件的基底上的铝化物粘结涂层的表面形态。 铝化物接合涂层具有柱状晶粒，使得晶界在接合涂层的表面暴露并限定脊。 然后处理粘合涂层的表面，使得从晶界脊和其他表面峰除去足够量的材料以使粘合涂层表面平坦化，即，脊和峰被替换为几乎平行于 粘结涂层的扩散区。 通过去除这些表面不规则性，据信在热处理如TBC沉积之后，将产生更稳定的粘合涂层表面，其中临界氧化铝粘合涂层界面将存在。

    Process for the continuous production by physical phase vapor deposition of coated metallic bands having a high corrosion resistance
    18.
    发明授权
    Process for the continuous production by physical phase vapor deposition of coated metallic bands having a high corrosion resistance 失效
    通过物理相气相沉积连续生产具有高耐蚀性的涂层金属带的方法

    公开(公告)号：US06335053B1

    公开(公告)日：2002-01-01

    申请号：US09062699

    申请日：1998-04-20

    申请人： Franco Arezzo ,  Pietro Gimondo ,  Gianni Speranza

    发明人： Franco Arezzo ,  Pietro Gimondo ,  Gianni Speranza

    IPC分类号： C23C1606

    CPC分类号： C23C14/16 ,  C23C14/562

    摘要： A process for the continuous production of coated metallic bands obtained by physical phase vapor deposition includes the following steps carried out on a band, eventually coated with zinc or its alloys, in motion and maintained in a vacuum environment: heating the band to be coated; activating the band surface; heat stabilizing the band; depositing a zinc layer on the metallic band; secondary heat stabilizing the band; and depositing one or more elements or compounds on the zinc layer, these elements being able to synergistically interact with the zinc layer to obtain high corrosion resistance, weldability, ductility, and adhesion.

    摘要翻译： 通过物理相气相沉积获得的连续生产涂覆金属带的方法包括在最终涂覆有锌或其合金的带上进行的以下步骤运动并保持在真空环境中：加热待涂覆的带; 激活带表面;热稳定带;在金属带上沉积锌层;二次热稳定带; 并且在锌层上沉积一种或多种元素或化合物，这些元素能够与锌层协同地相互作用以获得高耐腐蚀性，可焊性，延展性和粘附性。

    Method of forming a thin film
    19.
    发明授权
    Method of forming a thin film 有权
    形成薄膜的方法

    公开(公告)号：US06645574B1

    公开(公告)日：2003-11-11

    申请号：US09719103

    申请日：2000-12-06

    申请人： Chun-Soo Lee ,  Won-Gu Kang ,  Kyu-Hong Lee ,  Kyoung-Soo Yi

    发明人： Chun-Soo Lee ,  Won-Gu Kang ,  Kyu-Hong Lee ,  Kyoung-Soo Yi

    IPC分类号： C23C1606

    CPC分类号： C30B25/14 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/45561 ,  C23C16/515 ,  C23C16/56 ,  C30B25/105

    摘要： A noble method of forming thin films for producing semiconductor or flat panel display devices is disclosed. The method is a way of effectively forming thin films on a substrate even if reactants do not react readily in a time-divisional process gas supply sequence in a reactor by supplying reactant gases and a purge gas cyclically and sequentially in order to prevent gas-phase reactions between the reactant gases and also by generating plasma directly on a substrate synchronously with the process gas supply cycle. The method has advantages of effective thin film formation even if the reactant gases do not react readily, minimization of the purge gas supply time for reduction in process time, reduction of particle contamination during film formation process, as well as thin film formation at low temperatures.

    摘要翻译： 公开了一种形成用于制造半导体或平板显示装置的薄膜的高贵方法。 该方法是在基板上有效地形成薄膜的方法，即使反应物在反应器中的分时工艺气体供应顺序中不容易反应，通过循环和顺序地供应反应气体和吹扫气体来反应，以防止气相 反应气体之间的反应，也是通过与工艺气体供应循环同步在衬底上直接产生等离子体。 该方法具有有效的薄膜形成的优点，即使反应物气体不容易反应，减少吹扫气体供应时间以减少处理时间，减少成膜过程中的颗粒污染，以及在低温下形成薄膜 。