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428 条记录 (耗时 0.03 秒)

    Light emitting device
    11.
    发明授权
    Light emitting device 有权

    公开(公告)号：US10381802B2

    公开(公告)日：2019-08-13

    申请号：US15762277

    申请日：2016-09-22

    申请人： PHILIPS PHOTONICS GMBH

    发明人： Stephan Gronenborn ,  Michael Miller ,  Peter Dannberg ,  Mark Schuermann ,  Holger Moench

    IPC分类号： H01S5/18 ,  H01S5/183 ,  H01S5/028 ,  H01S5/042 ,  H01S5/42 ,  H01S5/00 ,  H01S5/02

    摘要： The invention describes a light emitting device (100). The light emitting device (100) comprises at least one light emitting structure (110), at least one processing layer (120) and at least one optical structure (130). The optical structure (130) comprises at least one material processed by means of processing light (150). The at least one processing layer (120) is arranged to reduce reflection of the processing light (150) in a direction of the optical structure (130) at least by 50%, preferably at least by 80%, more preferably at least by 95% and most preferably at least by 99% during processing of the material by means of the processing light (150). It is a basic idea of the present invention to incorporate a non- or low-reflective processing layer (120) on top of a light emitting structure (110) like a VCSEL array in order to enable on wafer processing of light emitting structures (130) like microlens arrays. The invention further describes a method of manufacturing such a light emitting device (100).

    Optical module
    12.
    发明授权
    Optical module 有权

    公开(公告)号：US10381799B2

    公开(公告)日：2019-08-13

    申请号：US15944049

    申请日：2018-04-03

    申请人： Oclaro Japan, Inc.

    发明人： Takanori Suzuki ,  Shigehisa Tanaka

    IPC分类号： H01S5/026 ,  G02B6/42 ,  H01S5/022 ,  H01S5/062 ,  H01S5/12 ,  H01S5/18 ,  H01S5/10

    摘要： An optical module includes a semiconductor laser with an active layer disproportionately positioned closer to the first surface. The semiconductor laser includes a reflector for reflecting the light outgoing from the active layer in a direction along the first surface toward another direction. The active layer and the reflector are monolithically integrated in the semiconductor laser. The optical module includes a carrier formed from a light transmissive material and having a third surface and a fourth surface opposite to each other. The semiconductor laser is mounted on the carrier so as for the light to enter the third surface. The carrier has a lens integrally on the fourth surface. The optical module includes a substrate having an optical waveguide and an optical coupler for guiding the light to the optical waveguide. The optical waveguide and the optical coupler are integrated in the substrate.

    Side-view light emitting laser element
    13.
    发明授权
    Side-view light emitting laser element 有权

    公开(公告)号：US10211598B2

    公开(公告)日：2019-02-19

    申请号：US15638356

    申请日：2017-06-29

    申请人： Lextar Electronics Corporation

    发明人： Te-Chung Wang ,  Shiou-Yi Kuo ,  Jun-Rong Chen

    IPC分类号： H01S5/32 ,  H01L33/60 ,  H01S5/042 ,  H01S5/18 ,  H01S5/20

    摘要： A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.