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公开(公告)号：US20180183047A1
公开(公告)日：2018-06-28
申请号：US15900559
申请日：2018-02-20
Applicant: NIHON SPINDLE MANUFACTURING CO., LTD. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Inventor： Taichi Sakamoto , Takashi Mukai , Yuta Ikeuchi , Naoto Yamashita , Masahiro Yanagida , Keiichi Asami , Keiichiro Onishi
CPC classification number: H01M4/1391 , C01B25/45 , C01G45/1242 , C01G51/42 , C01G53/42 , C01G53/50 , C01G53/54 , C01P2006/40 , C09D7/80 , H01M4/0404 , H01M4/131 , H01M4/136 , H01M4/1397 , H01M4/625 , H01M10/052 , H01M10/0525 , H01M2004/028
Abstract: Provided is a method for manufacturing a slurry for a positive electrode of a nonaqueous electrolyte secondary battery containing an alkali metal complex oxide, the method making it possible to reliably deaerate surplus carbonic acid gas after an alkali component of a slurry containing the alkali metal complex oxide is neutralized within a short period of time. The method for manufacturing a slurry for a positive electrode of a nonaqueous electrolyte secondary battery includes a step of manufacturing an electrode slurry including a step of performing a neutralization treatment on an alkali component in the slurry by using inorganic carbon dissolved in a solvent of the slurry and a step of deaerating the inorganic carbon in the slurry as carbonic acid gas by causing cavitation.
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公开(公告)号：US20180182884A1
公开(公告)日：2018-06-28
申请号：US15841461
申请日：2017-12-14
Applicant: FUJI ELECTRIC CO., LTD. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Inventor： Yusuke KOBAYASHI , Manabu Takei , Shinsuke Harada
CPC classification number: H01L29/7806 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/7813
Abstract: On a front surface of a semiconductor base, a first n−-type drift region, a second n-type drift region, and a third n+-type drift region are provided. In the front surface of the semiconductor base, a gate trench is provided penetrating the n+-type source region and the p-type base region, and reaching the second n-type drift region. Between adjacent gate trenches, a contact trench is provided that penetrates the n+-type source region, the p-type base region, and the second and third n-type drift regions, and that reaches the p-type semiconductor region. A source electrode embedded in the contact trench is in contact with the p-type semiconductor region at the bottom and the corners of the contact trench and forms a Schottky junction with the third n+-type drift region and the second n-type drift region at a side wall of the contact trench.
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公开(公告)号：US20180179481A1
公开(公告)日：2018-06-28
申请号：US15824081
申请日：2017-11-28
Applicant: TOKYO OHKA KOGYO CO., LTD. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Inventor： Takashi FUJIMOTO , Hidenori MIYAMOTO , Shinji SUGIURA , Kazumi SHIN , Fumiki YANAGAWA , Toshiyuki KANAMORI
IPC: C12M3/06 , B01J19/00 , C09J167/02 , G01N35/00
CPC classification number: C12M23/16 , B01J19/0046 , B01J19/0093 , B01L2300/0819 , B33Y10/00 , C09J4/06 , C09J167/02 , C12M23/22 , C12M33/00 , G01N35/00029 , G01N2035/00158
Abstract: A method for producing a chip for cell culture that enables production of a microchannel structure, enables mass production at low cost, and also has functions suited to cell culture. The method includes forming a photosensitive adhesive layer by applying a photosensitive adhesive to a first substrate having transparency, thus obtaining a 3D printing substrate, 3D printing steps that employ vat photopolymerization, forming a first adhesive layer by depositing a first adhesive on a second substrate having transparency, thus obtaining a cell culture channel top plate, and bonding the cell culture channel and the cell culture channel top plate together via the first adhesive layer, and then performing thermocompression bonding to obtain a microchannel structural body having a hollow structure, wherein the first adhesive is a polyester-based resin having a Tg value of 5° C. or higher.
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公开(公告)号：US20180179080A1
公开(公告)日：2018-06-28
申请号：US15753904
申请日：2016-08-19
Inventor： Junji AKIMOTO , Naoki HAMAO , Kunimitsu KATAOKA
Abstract: Provided is a complex oxide that has a space group I-43d, has a high hydrogen content, contains almost no impurity phase, exhibits almost no aluminum substitution in the structure thereof, and is suitable for proton conductivity. This complex oxide is represented by a chemical formula Li7-x-yHxLa3Zr2-yMyO12 (M represents Ta and/or Nb, 3.2
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公开(公告)号：US10000514B2
公开(公告)日：2018-06-19
申请号：US15309900
申请日：2015-04-30
Inventor： Norihisa Fukaya , Seong-Jib Choi , Jun-Chul Choi , Toshio Horikoshi , Kazuhiko Sato , Hiroyuki Yasuda
IPC: C07F7/04
Abstract: An object of the present invention is to provide a method for producing tetraalkoxysilane while saving energy at a high yield. Tetraalkoxysilane can be produced while saving energy at a high yield by the method including a first step of reacting alcohol with carbon dioxide in the presence of a dehydrating agent and/or in a reactor provided with a dehydrating means, and a second step of reacting a reaction mixture obtained in the first step with silicon oxide.
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Patent Agency Ranking
公开(公告)号：US20180164199A1
公开(公告)日：2018-06-14
申请号：US15577602
申请日：2016-06-01
Inventor： Tatsuya MIYAJIMA
Abstract: A measurement apparatus for carrying out an indentation creep test on a specimen, including a measurement control apparatus that includes a load measurement device, a constant-load compression device configured to compress a tip of a transparent indenter to a surface of the specimen, and an image capturing device configured to optically capture an image including a contact area portion which is a part of the specimen to which the load is applied by the constant-load compression device. The apparatus also includes an information processing apparatus that includes an image analysis unit configured to analyze a contact area, and a physical property value calculation unit. The physical property value calculation unit conducts linear regression with respect to a plot of a logarithmic value of the contact stress and a logarithmic value of the contact strain rate so as to determine a creep index n and creep constant k.
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公开(公告)号：US20180162796A1
公开(公告)日：2018-06-14
申请号：US15577651
申请日：2016-05-27
Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , NISSAN CHEMICAL INDUSTRIES, LTD.
Inventor： Hajime KAWANAMI , Takayuki ISHIZAKA , Hitomi FUJIYAMA , Nobuyuki KAKIUCHI , Norihito SHIGA
IPC: C07C29/34 , C07C31/125 , B01J31/02
CPC classification number: C07C29/34 , B01J31/0207 , C07C31/125
Abstract: A method for preparing a branched alcohol by dimerizing an aliphatic monoalcohol having three or more carbon atoms in the presence of a base and a catalyst. The dimerization reaction is performed under atmospheric pressure while injecting a hydrogen gas. With this method, it is possible to obtain a dimerized alcohol with excellent yield even when using a branched aliphatic monoalcohol as the starting material.
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218.发明申请公开(公告)号：US20180155682A1
公开(公告)日：2018-06-07
申请号：US15578454
申请日：2016-04-26
Inventor： Yasuyuki Kida , Yuzo Takayama
IPC: C12N5/0793
CPC classification number: C12N5/0619 , C12N1/00 , C12N5/00 , C12N2501/155 , C12N2501/30 , C12N2501/41 , C12N2501/415 , C12N2501/48 , C12N2506/03
Abstract: Provided is a method for inducing differentiation of neural crest cells into neurons of the autonomic nervous system, the method including the step of culturing neural crest cells in the presence of at least one of a BMP signaling pathway activator, an SHH signaling pathway inhibitor, and a Wnt signaling pathway inhibitor.
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公开(公告)号：US09988672B2
公开(公告)日：2018-06-05
申请号：US14775004
申请日：2014-03-13
Inventor： Ryoji Kurita , Hiroyuki Yanagisawa , Kyoko Yoshioka , Osamu Niwa
IPC: C12Q1/6804 , C12Q1/68 , G01N33/53
CPC classification number: C12Q1/683 , C12Q1/6804 , C12Q1/6827 , G01N33/5308 , G01N2440/12 , C12Q2537/164 , C12Q2521/307 , C12Q2563/131 , C12Q2565/501
Abstract: To provide a method for selectively detecting the methylation of particular cytosines in genomic DNA using a methylcytosine detection method using an anti-methylcytosine antibody to improve quantitativity and reliability. A method for detecting the methylated state of cytosine at a specific position contained in a nucleic acid, includes fragmenting the nucleic acid using a restriction enzyme; forming a double-stranded nucleic acid between the fragmented nucleic acid and a single-stranded nucleic acid having a base sequence capable of hybridizing with the fragmented nucleic acid but incapable of resulting in the formation of a base pair with cytosine at a specific position in the fragmented nucleic acid and a solid phase-binding site; binding the double-stranded nucleic acid on a solid phase using the solid phase-binding site; and measuring the amount of an antibody binding to the double-stranded nucleic acid on the solid phase.
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公开(公告)号：US20180142193A1
公开(公告)日：2018-05-24
申请号：US15576228
申请日：2016-03-25
Inventor： Masami SUZUKI , Norio NISHI , Junichi MATSUMOTO , Kimio SUMARU , Toshiyuki KANAMORI
IPC: C12M1/42 , C12N5/00 , C12M1/00 , C12M1/12 , C12M1/26 , C12N1/02 , C12N13/00 , C12M1/34 , C12M1/32
CPC classification number: C12M1/42 , C12M1/005 , C12M1/3446 , C12M23/20 , C12M25/06 , C12M31/02 , C12M33/06 , C12M33/10 , C12M47/04 , C12N1/00 , C12N1/02 , C12N5/0081 , C12N13/00
Abstract: A method of killing specific cells from among a group of cells cultured in a culture vessel by quick and brief laser treatment, the cell culture vessel comprising a main body and a to-be-irradiated layer attached to the main body, the to-be-irradiated layer containing an ingredient capable of absorbing laser light upon laser irradiation, the group of cells being cultured on the surface of the to-be-irradiated layer, the method comprising: applying laser light to a partial area of the to-be-irradiated layer directly below the specific cells.
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