中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

2641 records (took 0.04 seconds)

    SENSOR DEVICE
    213.
    发明申请
    SENSOR DEVICE 审中-公开

    公开(公告)号：US20190223738A1

    公开(公告)日：2019-07-25

    申请号：US16303719

    申请日：2017-05-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Tim Böscke ,  Stephan Haslbeck

    IPC: A61B5/024 ,  A61B5/1455

    Abstract: A sensor device includes a first light emitter that emits light with a wavelength from a first spectral range, a second light emitter that emits light with a wavelength from a second spectral range, a first light detector configured to detect light with a wavelength from the first spectral range, but not to respond to light with a wavelength from the second spectral range, and a second light detector configured to detect light with a wavelength from the first spectral range and light with a wavelength from the second spectral range, wherein a distance between the first light emitter and the first light detector is smaller than a distance between the second light emitter and the second light detector.

    Epitaxial Conversion Element, Method for Producing an Epitaxial Conversion Element, Radiation Emitting RGB Unit and Method for Producing a Radiation Emitting RGB Unit
    215.
    发明申请
    Epitaxial Conversion Element, Method for Producing an Epitaxial Conversion Element, Radiation Emitting RGB Unit and Method for Producing a Radiation Emitting RGB Unit 审中-公开

    公开(公告)号：US20190221706A1

    公开(公告)日：2019-07-18

    申请号：US16252323

    申请日：2019-01-18

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alexander Tonkikh ,  Andreas Plößl

    IPC: H01L33/00 ,  H01L33/32 ,  H01L33/30

    Abstract: An epitaxial conversion element, a method for producing an epitaxial conversion element, a radiation emitting RGB unit and a method for producing a radiation emitting RGB unit are disclosed. In an embodiment an epitaxial conversion element includes a green converting epitaxial layer configured to convert electromagnetic radiation from a blue spectral range into electromagnetic radiation of a green spectral range and a red converting epitaxial layer configured to convert electromagnetic radiation from the blue spectral range into electromagnetic radiation of a red spectral range, wherein the green converting epitaxial layer and the red converting epitaxial layer are based on a phosphide compound semiconductor material, and wherein the green converting epitaxial layer and the red converting epitaxial layer are in different main extension planes which are parallel to each other.

    Optoelectronic semiconductor component
    216.
    发明授权
    Optoelectronic semiconductor component 有权

    公开(公告)号：US10355170B2

    公开(公告)日：2019-07-16

    申请号：US15507752

    申请日：2015-08-21

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Guido Weiss

    IPC: H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/36 ,  H01L33/38 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L33/24

    Abstract: Disclosed is an optoelectronic semiconductor component (1) comprising a semiconductor member (2) that has a succession of semiconductor layers including an active region (20) for generating radiation, a first semiconductor layer (21), and a second semiconductor layer (22). The active region is located between the first semiconductor layer and the second semiconductor layer; the semiconductor member has a plurality of cavities (25) which extend through the second semiconductor layer and the active region; and from a bird's eye view onto the semiconductor member, the cavities are elongate and have a longitudinal axis (250).

    Method for producing a nitride compound semiconductor device
    217.
    发明授权
    Method for producing a nitride compound semiconductor device 有权

    公开(公告)号：US10354865B2

    公开(公告)日：2019-07-16

    申请号：US15573468

    申请日：2016-05-11

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Joachim Hertkorn ,  Lorenzo Zini ,  Alexander Frey

    IPC: H04L21/02 ,  C30B25/04 ,  H01L21/02 ,  C30B29/40 ,  C30B25/18 ,  C30B33/10

    Abstract: A method for procuring a nitride compound semiconductor device is disclosed. In an embodiment the method includes growing a first nitride compound semiconductor layer onto a growth substrate, depositing a masking layer, growing a second nitride compound semiconductor layer onto the masking layer, growing a third nitride compound semiconductor layer onto the second nitride compound semiconductor layer such that the third nitride compound semiconductor layer has non-planar structures and growing a fourth nitride compound semiconductor layer onto the non-planar structures such that the fourth nitride compound semiconductor layer has an essentially planar surface. The method further includes growing a functional layer sequence of the nitride compound semiconductor device, connecting a side of the functional layer sequence located opposite to the growth substrate to a carrier and removing the growth substrate.

    SEMICONDUCTOR LIGHT SOURCE
    220.
    发明申请
    SEMICONDUCTOR LIGHT SOURCE 审中-公开

    公开(公告)号：US20190199056A1

    公开(公告)日：2019-06-27

    申请号：US16311868

    申请日：2017-06-07

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Christoph Eichler ,  Sven Gerhard ,  Alfred Lell ,  Bernhard Stojetz

    IPC: H01S5/00 ,  H01S5/10 ,  H01S5/22 ,  H01S5/028 ,  H01S5/40

    Abstract: A semiconductor light source includes a laser and at least one phosphor, wherein the laser includes a semiconductor body having at least one active zone that generates laser radiation, at least one resonator having resonator mirrors and having a longitudinal axis is formed in the laser so that the laser radiation is guided and amplified along the longitudinal axis during operation and the active zone is located at least partially in the resonator, and the phosphor is optically coupled to the resonator in a gap-free manner so that in the direction transverse to the longitudinal axis at least part of the laser radiation is introduced into the phosphor and converted into a secondary radiation having a greater wavelength.

Patent Agency Ranking