公开(公告)号：US20160105590A1

公开(公告)日：2016-04-14

申请号：US14848962

申请日：2015-09-09

Applicant: STMICROELECTRONICS SA

Inventor： Manu ALIBAY ,  Stéphane AUBERGER

IPC: H04N5/14 ,  H04N5/232

CPC classification number: H04N5/145 ,  G06T7/246 ,  G06T7/277 ,  G06T2207/10016 ,  H04N5/23254 ,  H04N5/23258 ,  H04N5/23277

Abstract: The method includes for each current pair of first and second successive video images determining movement between the two images. The determining includes a phase of testing homography model hypotheses on the movement by a RANSAC type algorithm operating on a set of points in the first image and first assumed corresponding points in the second image so as to deliver one of the homography model hypothesis that defines the movement. The test phase includes a test of first homography model hypotheses of the movement obtained from a set of second points in the first image and second assumed corresponding points in the second image. At least one second homography model hypothesis is obtained from auxiliary information supplied by an inertial sensor and representative of a movement of the image sensor between the captures of the two successive images of the pair.

Abstract translation: 该方法包括用于确定两个图像之间的移动的每对当前第一和第二连续视频图像对。 该确定包括通过对第一图像中的一组点和第二图像中的第一假定对应点操作的RANSAC类型算法来测试运动上的单应性模型假设的相位，以便递送定义 运动。 测试阶段包括从第一图像中的一组第二点和第二图像中的第二假定对应点获得的运动的第一单应性模型假设的测试。 从由惯性传感器提供的辅助信息获得至少一个第二单应性模型假说，并表示图像传感器在该对的两个连续图像的捕获之间的运动。

公开(公告)号：US20160099183A1

公开(公告)日：2016-04-07

申请号：US14965990

申请日：2015-12-11

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Denis Rideau ,  Elise Baylac ,  Emmanuel Richard ,  Francois Andrieu

IPC: H01L21/84 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/10

CPC classification number: H01L21/84 ,  H01L21/76283 ,  H01L21/823412 ,  H01L21/823481 ,  H01L27/1218 ,  H01L27/1262 ,  H01L27/127 ,  H01L29/1033 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603

Abstract: The transverse mechanical stress within the active region of a MOS transistor is relaxed by forming an insulating incursion, such as an insulated trench, within the active region of the MOS transistor. The insulated incursion is provided at least in a channel region of the MOS transistor so as to separate the channel region into two parts. The insulated incursion is configured to extend in a direction of a length of the MOS transistor. The insulated incursion may further extend into one or more of a source region or drain region located adjacent the channel region of the MOS transistor.

公开(公告)号：US09305828B2

公开(公告)日：2016-04-05

申请号：US14526005

申请日：2014-10-28

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Denis Rideau ,  Emmanuel Josse ,  Olivier Nier

IPC: H01L21/00 ,  H01L21/762 ,  H01L21/02 ,  H01L29/78 ,  H01L21/84 ,  H01L21/324

CPC classification number: H01L21/76283 ,  H01L21/02356 ,  H01L21/324 ,  H01L21/76237 ,  H01L21/84 ,  H01L21/845 ,  H01L29/66795 ,  H01L29/7846 ,  H01L29/7847

Abstract: One or more embodiments of the invention concerns a method of forming a semiconductor layer having uniaxial stress including: forming, in a surface of a semiconductor structure having a stressed semiconductor layer and an insulator layer, at least two first trenches in a first direction delimiting a first dimension of at least one first transistor to be formed in the semiconductor structure; performing a first anneal to decrease the viscosity of the insulating layer; and forming, in the surface after the first anneal, at least two second trenches in a second direction delimiting a second dimension of the at least one transistor.

Abstract translation: 本发明的一个或多个实施方案涉及一种形成具有单轴应力的半导体层的方法，包括：在具有应力半导体层和绝缘体层的半导体结构的表面中形成至少两个第一方向的第一沟槽， 要在半导体结构中形成的至少一个第一晶体管的第一尺寸; 执行第一退火以降低绝缘层的粘度; 以及在所述第一退火之后的表面中，在限定所述至少一个晶体管的第二维度的第二方向上形成至少两个第二沟槽。

公开(公告)号：US20160093662A1

公开(公告)日：2016-03-31

申请号：US14953973

申请日：2015-11-30

Applicant: STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Michel Marty ,  Laurent Frey

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/107

Abstract: A back side illumination photodiode includes a light-receiving back side surface of a semiconductor material substrate. An area of the light-receiving back side surface includes a recess. The recess is filled with a material having an optical index that is lower than an optical index of the semiconductor material substrate. Both the substrate and the filling material are transparent to an operating wavelength of the photodiode. The recess may be formed to have a ring shape.

公开(公告)号：US20160056612A1

公开(公告)日：2016-02-25

申请号：US14827429

申请日：2015-08-17

Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives ,  STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Thomas Ferrotti ,  Badhise Ben Bakir ,  Alain Chantre ,  Sebastien Cremer ,  Helene Duprez

IPC: H01S5/12 ,  H01S5/02 ,  H01S5/343

CPC classification number: H01S5/1237 ,  G02B6/30 ,  G02B6/34 ,  G02B2006/12061 ,  G02B2006/12121 ,  H01L2224/32 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0421 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/187 ,  H01S5/323 ,  H01S5/343 ,  H01S2301/166

Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising:a III-V heterostructure gain medium (3); andan optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon.The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).

Abstract translation: 本发明涉及一种布置在硅中和/或硅上的III-V异质结构激光器件，包括：III-V异质结构增益介质; 以及面向所述增益介质（3）布置并包括配备有纵向肋（17）的平板波导（15）的光学肋波导（11），所述光学波纹管（11）布置在所述硅中。 光学肋波导（11）被定向成使得至少一个布拉格光栅（19,19a，19b）布置在相对于增益介质（3）近端的平板波导（15）的该侧（21）上， 因为肋（17）被放置在相对于增益介质（3）远端的平板波导（15）的该侧（23）上。

公开(公告)号：US09268743B2

公开(公告)日：2016-02-23

申请号：US13949884

申请日：2013-07-24

Applicant: STMicroelectronics SA

Inventor： Jean-Robert Manouvrier

IPC: G06F17/50 ,  G06F17/10

CPC classification number: G06F17/10 ,  G06F17/5036

Abstract: The electric behavior of a reverse-biased PN junction diode is modeled by measuring the value of voltage V present across the diode and the value of the corresponding current I running through this diode, the voltage V varying within a range of values including the value of diode breakdown voltage. A representation of a function ln ⁡ ( I - I s ) according to voltage V is established from the measured values of current I and of voltage V, IS being the saturation current of the diode. A linear function representative of a substantially linear portion of the function, characterized by voltages V greater than breakdown voltage VBK in terms of absolute value, is determined. An avalanche multiplication factor MM is then calculated by MM = 1 + ⅇ ( - slbv · V + bv bv ) , with parameter slbv equal to the ordinate at the origin of the linear function, and parameter slbv/bv equal to the slope of the linear function.

Abstract translation: 反向偏置PN结二极管的电气行为通过测量二极管上存在的电压V的值和通过该二极管的相应电流I的值来建模，电压V在包括的值的范围内变化 二极管击穿电压。 根据电压I和电压V的测量值建立函数ln⁡（I-I s）的表示，IS是二极管的饱和电流。 确定表示功能的基本线性部分的线性函数，其特征在于以绝对值计的大于击穿电压VBK的电压V。 然后通过MM = 1 +ⅇ（ - slbv·V + bv bv）计算雪崩倍增因子MM，参数slbv等于线性函数原点的纵坐标，参数slbv / bv等于 线性函数。

公开(公告)号：US20160047692A1

公开(公告)日：2016-02-18

申请号：US14925753

申请日：2015-10-28

Applicant: STMicroelectronics SA

Inventor： Hani Sherry ,  Andreia Cathelin ,  Andreas Kaiser ,  Ullrich Pfeiffer ,  Janusz Grzyb ,  Yan Zhao

IPC: G01J5/22

CPC classification number: G01J5/22 ,  G01J5/10 ,  G01J5/20 ,  G01J2005/0077 ,  G01J2005/202 ,  G01N21/3581 ,  H01Q23/00 ,  Y10T29/49018

Abstract: A terahertz imager includes an array of pixel circuits. Each pixel circuit has an antenna and a detector. The detector is coupled to differential output terminals of the antenna. A frequency oscillator is configured to generate a frequency signal on an output line. The output line is coupled to an input terminal of the antenna of at least one of the pixel circuits.

Abstract translation: 太赫兹成像器包括像素电路阵列。 每个像素电路具有天线和检测器。 检测器耦合到天线的差分输出端。 频率振荡器被配置为在输出线上产生频率信号。 输出线耦合到至少一个像素电路的天线的输入端。

公开(公告)号：US09264076B2

公开(公告)日：2016-02-16

申请号：US14177371

申请日：2014-02-11

Applicant: STMICROELECTRONICS SA ,  INSTITUT POLYTECHNIQUE DE BORDEAUX ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE DE BORDEAUX

Inventor： Didier Belot ,  Yann Deval ,  Francois Rivet

IPC: G06F1/04 ,  H03K3/00 ,  H04B1/00 ,  H04B1/403 ,  H04B1/04

CPC classification number: H04B1/0014 ,  H04B1/406 ,  H04B2001/0491

Abstract: A device for generating a signal, including: a balun; and a circuit capable of summing up, on a first access terminal of the balun, currents representative of signals received on first input terminals of the device, and on a second access terminal of the balun, currents representative of signals received on second input terminals of the device.

Abstract translation: 一种用于产生信号的装置，包括：平衡 - 不平衡转换器; 以及能够在所述平衡 - 不平衡变换器的第一接入终端上总和的电流，代表在所述设备的第一输入端子上接收的信号的电流，以及在所述平衡 - 不平衡变换器的第二接入终端上的总和的电流， 装置。

公开(公告)号：US09257526B2

公开(公告)日：2016-02-09

申请号：US14313836

申请日：2014-06-24

Applicant: STMicroelectronics SA

Inventor： Pierre Boulenc

IPC: H01L29/66 ,  H01L21/8249 ,  H01L29/732 ,  H01L29/06 ,  H01L29/739 ,  H01L29/08

CPC classification number: H01L29/66333 ,  H01L21/8249 ,  H01L29/0692 ,  H01L29/0821 ,  H01L29/66272 ,  H01L29/7325 ,  H01L29/7395

Abstract: The present disclosure relates to a method for manufacturing a bipolar transistor. The method forms a trench to isolate a first region from a second region in a semiconductor wafer, and to isolate these regions from the rest of the wafer. The method forms first P-doped well in the second region and produces a collector region of second and third wells by a P doping in the first region. The second well is in contact with the first well below the trench. The method also produces an N-doped base well on the collector region and, at the wafer surface, and forms a CMOS transistor gate on the first region and delimiting a third region and a fourth region. The method also forms a P+-doped collector contact region in the first well, forms a P+ doped emitter region in the third region, and forms an N+-doped base contact region in the fourth region.

Abstract translation: 本公开涉及一种用于制造双极晶体管的方法。 该方法形成沟槽以将第一区域与半导体晶片中的第二区域隔离，并将这些区域与晶片的其余部分隔离。 该方法在第二区域中形成第一P掺杂阱，并且在第一区域中通过P掺杂产生第二阱和第三阱的集电极区。 第二个井与沟槽下面的第一个井接触。 该方法还在集电极区域和晶片表面上产生N掺杂的基极阱，并在第一区域上形成CMOS晶体管栅极并限定第三区域和第四区域。 该方法还在第一阱中形成P +掺杂的集电极接触区，在第三区中形成P +掺杂的发射极区，并在第四区中形成N +掺杂的基极接触区。

公开(公告)号：US20160033260A1

公开(公告)日：2016-02-04

申请号：US14661907

申请日：2015-03-18

Applicant: STMicroelectronics SA

Inventor： Stéphane Valente

IPC: G01B11/14 ,  G06N7/00 ,  G06F3/042 ,  G01S17/08

CPC classification number: G01B11/14 ,  G01S17/08 ,  G06F3/017 ,  G06F3/0304 ,  G06F3/042 ,  G06N7/005

Abstract: The method for processing signals originating for example from several proximity sensors for the recognition of a movement of an object, comprises first respective samplings of the said signals delivered by the sensors so as to obtain a first set of first date-stamped samples, the generation, from the first set of first date-stamped samples, of new sampling times comprising a start of movement time, an end of movement time, and times regularly spaced between the start of movement time and the end of movement time, a re-sampling of the signal delivered by each sensor between the start of movement time and the end of movement time at the said new sampling times using the first samples, in such a manner as to generate a second set of second date-stamped samples, and a processing of the said second set of date-stamped samples by a movement recognition algorithm.

Abstract translation: 用于处理例如来自几个接近传感器的信号的方法，用于识别物体的移动，包括由传感器传送的所述信号的第一个相应采样，以便获得第一组初始加盖日期的采样， 从第一组初始日期标记的样本中，包括移动时间的开始，移动时间结束以及移动时间开始与移动时间结束之间规则间隔的时间的新采样时间，重新采样 在使用第一采样的所述新采样时间之间，在移动时间开始和移动时间结束之间由每个传感器传送的信号以产生第二组第二日期戳样本的方式，以及处理 的所述第二组日期戳样本通过运动识别算法。