公开(公告)号：US09365926B2

公开(公告)日：2016-06-14

申请号：US14629333

申请日：2015-02-23

Applicant: ASM International N.V.

Inventor： Timo Hatanpaa ,  Jaakko Niinisto ,  Mikko Ritala ,  Markku Leskela ,  Suvi Haukka

IPC: C23C16/40 ,  C23C16/455 ,  C01G23/07 ,  C01G25/02 ,  C01G27/02

CPC classification number: C23C16/405 ,  C01G23/07 ,  C01G25/02 ,  C01G27/02 ,  C01P2006/40 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45553

Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Abstract translation: 本文提供了通过原子层沉积形成过渡金属氧化物薄膜，优选IVB族金属氧化物薄膜的方法。 金属氧化物薄膜可以使用金属有机反应物在高温下沉积。 在一些实施方案中使用包含两种配体的金属有机反应物，其中至少一种是环庚三烯或环庚三烯（CHT）配体。 金属氧化物薄膜可以用作例如晶体管，闪光器件，电容器，集成电路和其它半导体应用中的电介质氧化物。

公开(公告)号：US09112003B2

公开(公告)日：2015-08-18

申请号：US13708863

申请日：2012-12-07

Applicant: ASM International. N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/768 ,  H01L21/31 ,  H01L21/314 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/285 ,  C23C16/04 ,  C23C16/14

CPC classification number: H01L21/7685 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/53238

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.

Abstract translation: 金属层可以相对于基板的第二表面选择性沉积在衬底的一个表面上。 在一些实施例中，金属层选择性地沉积在铜上而不是绝缘或介电材料。 在一些实施方案中，第一前体在第一表面上形成一层，随后反应或转化以形成金属层。 可以选择沉积温度使得达到高于约50％或甚至约90％的选择性。

公开(公告)号：US20150187600A1

公开(公告)日：2015-07-02

申请号：US14613183

申请日：2015-02-03

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/7685 ,  C23C16/0227 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

Abstract translation: 金属层可以相对于基板的第二表面选择性地沉积在基板的表面上。 在优选实施例中，金属层选择性地沉积在铜上，而不是绝缘或介电材料。 在优选的实施方案中，第一前体在第一表面上形成层或吸附的物质，随后反应或转化以形成金属层。 优选选择沉积温度使得达到高于约90％的选择性。

公开(公告)号：US08956939B2

公开(公告)日：2015-02-17

申请号：US13872932

申请日：2013-04-29

Applicant: ASM International N.V.

Inventor： Qi Xie ,  Vladimir Machkaoutsan ,  Jan Willem Maes ,  Michael Givens ,  Petri Raisanen

IPC: H01L21/00 ,  H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146

Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD) and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. Forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.

Abstract translation: 公开了一种形成电阻随机存取存储器（RRAM）装置的方法。 该方法包括形成第一电极，通过热原子层沉积（ALD）形成包括金属氧化物的电阻式切换氧化物层，并通过热原子层沉积（ALD）形成第二电极，其中电阻式开关层介于第一 电极和第二电极。 可以在沉积金属氧化物之后，进行电阻式开关氧化物的形成而不使开关氧化物层的表面暴露于表面改性等离子体处理。

公开(公告)号：US20150017794A1

公开(公告)日：2015-01-15

申请号：US14184116

申请日：2014-02-19

Applicant: ASM International. N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/225 ,  H01L21/22 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US11302527B2

公开(公告)日：2022-04-12

申请号：US16998338

申请日：2020-08-20

Applicant: ASM International N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/22 ,  H01L21/225 ,  H01L21/324

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

公开(公告)号：US20210347795A1

公开(公告)日：2021-11-11

申请号：US17383825

申请日：2021-07-23

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC: C07F11/00 ,  C23C16/30 ,  C23C16/455 ,  H01L45/00

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se—containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：US10964534B2

公开(公告)日：2021-03-30

申请号：US16411957

申请日：2019-05-14

Applicant: ASM International N.V.

Inventor： Antti Rahtu ,  Eva Tois ,  Kai-Erik Elers ,  Wei-Min Li

IPC: C23C16/26 ,  C23C16/40 ,  H01L21/02 ,  C23C16/455 ,  H01L21/28 ,  H01L21/768 ,  C23C16/32 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/312

Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

公开(公告)号：US10738382B2

公开(公告)日：2020-08-11

申请号：US14777945

申请日：2014-03-18

Applicant: ASM INTERNATIONAL N.V.

Inventor： Ernst Hendrik August Granneman ,  Pieter Tak

IPC: C23C16/455 ,  H01L21/677 ,  B65G51/03 ,  C23C16/54 ,  C23C16/44

Abstract: A substrate processing apparatus (100) comprising a process tunnel (102) including a lower tunnel wall (122), an upper tunnel wall (142), and two lateral tunnel walls (128), said tunnel walls being configured to bound a process tunnel space (104) that extends in a longitudinal transport direction (7) and that is suitable for accommodating at least one substantially planar substrate (180) oriented parallel to the upper and lower tunnel walls (122, 142), the process tunnel being divided in a lower tunnel body (120) comprising the lower tunnel wall and an upper tunnel body (140) comprising the upper tunnel wall, which tunnel bodies (120, 140) are separably joinable to each other along at least one longitudinally extending join (160), such that they are mutually movable between a closed configuration in which the tunnel walls (122, 128, 142) bound the process tunnel space (104) and an open configuration that enables lateral maintenance access to an interior of the process tunnel.

公开(公告)号：US10553440B2

公开(公告)日：2020-02-04

申请号：US15186950

申请日：2016-06-20

Applicant: ASM International N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L21/28 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/3215

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.