公开(公告)号：US20240213205A1

公开(公告)日：2024-06-27

申请号：US18088498

申请日：2022-12-23

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Jung Jui KANG ,  Shih-Yuan SUN ,  Chieh-Chen FU

IPC分类号： H01L23/00 ,  G02B6/42 ,  H01L23/31

CPC分类号： H01L24/29 ,  G02B6/4239 ,  G02B6/424 ,  G02B6/4253 ,  H01L23/3157 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16227 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/73204

摘要： A package is provided. The package includes a carrier, a component, and a first protective element. The component is disposed over the carrier and having a side surface configured for optically coupling. The first protective element is disposed between the carrier and the component. The side surface of the component is free from being in contact with the first protective element.

公开(公告)号：US20240203897A1

公开(公告)日：2024-06-20

申请号：US18082478

申请日：2022-12-15

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Zheng Wei WU ,  Cheng Kai CHANG

IPC分类号： H01L23/552 ,  H01L21/50 ,  H01L23/31

CPC分类号： H01L23/552 ,  H01L21/50 ,  H01L23/3121

摘要： The present disclosure provides a semiconductor device package. The semiconductor device package includes a substrate having a first surface, an electrical contact disposed over a first region of the substrate, and an EMI shielding layer disposed over the substrate. The EMI shielding layer includes a non-uniform thickness and an elevation of the EMI shielding layer is higher than an elevation of the electrical contact with respect to the first surface of the substrate. A method for manufacturing a semiconductor device package is also disclosed.

公开(公告)号：US20240197176A1

公开(公告)日：2024-06-20

申请号：US18083447

申请日：2022-12-16

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Kuei-Hao TSENG ,  Kai Hung WANG ,  Kai-Di LU ,  Yu-Chih LEE ,  Cheng-Tsao PENG ,  Pang Yuan LEE

IPC分类号： A61B5/00 ,  H05K1/02

CPC分类号： A61B5/0002 ,  H05K1/0277

摘要： The present disclosure provides a sensing device. The sensing device includes a flexible element having a first sensing area, an electronic component embedded within the flexible element, and an adjustable conductive element disposed in the flexible element and configured to electrically connect the first sensing area of the flexible element with the electronic component.

公开(公告)号：US12009351B2

公开(公告)日：2024-06-11

申请号：US17525833

申请日：2021-11-12

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wei-Hao Chang

IPC分类号： H01L25/16 ,  H01L21/78 ,  H01L21/82 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L25/07 ,  H01L21/683

CPC分类号： H01L25/162 ,  H01L21/78 ,  H01L21/82 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/5386 ,  H01L24/12 ,  H01L24/15 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/072 ,  H01L25/074 ,  H01L25/165 ,  H01L21/6836 ,  H01L2225/1058 ,  H01L2924/181

摘要： A semiconductor device package and a method for manufacturing the semiconductor device package are provided. The semiconductor device package includes a first substrate, a second substrate disposed over the first substrate and having a first surface facing away from the first substrate and a second surface facing the first substrate, a first component disposed on the first surface of the second substrate, a second component disposed on the second surface of the second substrate; and a support member covering the first component.

公开(公告)号：US12009313B2

公开(公告)日：2024-06-11

申请号：US17492493

申请日：2021-10-01

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Meng-Jen Wang ,  Chien-Yuan Tseng ,  Hung Chen Kuo ,  Ying-Hao Wei ,  Chia-Feng Hsu ,  Yuan-Long Chiao

IPC分类号： H01L23/552 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538

CPC分类号： H01L23/552 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/5389

摘要： A selective EMI shielding structure for a semiconductor package and a method of fabrication thereof is disclosed. The semiconductor package, comprising: a substrate having a first face; at least one first electronic component mounted adjacent to a first region of the first face; a least one second electronic component mounted adjacent to a second region of the first face; and an encapsulant disposed over the first and the second electronic components, wherein the encapsulant covers directly over the first electronic component, and wherein the encapsulant covers the second electronic component through a layer of conductive material.

公开(公告)号：US20240186201A1

公开(公告)日：2024-06-06

申请号：US18440919

申请日：2024-02-13

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Ming-Han WANG ,  Ian HU

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/48 ,  H01L25/065 ,  H01L25/10

CPC分类号： H01L23/3128 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3135 ,  H01L23/481 ,  H01L24/09 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/02372 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/107

摘要： A semiconductor device package includes a first substrate, a second substrate, and a first electronic component between the first substrate and the second substrate. The first electronic component has a first surface facing the first substrate and a second surface facing the second substrate. The semiconductor device package also includes a first electrical contact disposed on the first surface of the first electronic component and electrically connecting the first surface of the first electronic component with the first substrate. The semiconductor device package also includes a second electrical contact disposed on the second surface of the first electronic component and electrically connecting the second surface of the first electronic component with the second substrate. A method of manufacturing a semiconductor device package is also disclosed.

公开(公告)号：US20240168238A1

公开(公告)日：2024-05-23

申请号：US18427793

申请日：2024-01-30

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Shao Hsuan CHUANG ,  Huang-Hsien CHANG

IPC分类号： G02B6/36 ,  G02B6/42 ,  H01L21/3065

CPC分类号： G02B6/3636 ,  G02B6/3632 ,  G02B6/4243 ,  H01L21/30655 ,  G02B6/3608

摘要： A recessed portion in a semiconductor substrate and a method of forming the same are provided. The method comprises: forming a mask on the semiconductor substrate; forming a protection layer on a top surface of the mask and on at least one sidewall of the mask, and on at least one surface of the semiconductor substrate exposed by the mask; performing a first etching process to remove the protection layer on the top surface of the mask and on a bottom surface of the semiconductor substrate exposed by the mask; and performing a second etching process to remove the remaining protection layer and to etch the semiconductor substrate to form the recessed portion. In this way, a recessed portion with relatively smooth and vertical sidewalls can be realized.

公开(公告)号：US11991827B2

公开(公告)日：2024-05-21

申请号：US17966701

申请日：2022-10-14

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chun-Yen Ting ,  Pao-Nan Lee ,  Hung-Chun Kuo ,  Jung Jui Kang ,  Chang Chi Lee

IPC分类号： H05K1/14

CPC分类号： H05K1/141

摘要： An electronic device is disclosed. The electronic device includes a system board and a first set of electronic devices disposed over the system board. Each of the first set of electronic devices comprises a processing unit and a carrier carrying the processing unit. The electronic device also includes a first interconnection structure electrically connected with the processing unit through the carrier and configured to receive a first power from a first power supply unit and to transmit the first power to the processing unit.

公开(公告)号：US20240155758A1

公开(公告)日：2024-05-09

申请号：US17981338

申请日：2022-11-04

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chien Lin CHANG CHIEN ,  Yuan-Chun TAI ,  Yu Hsin CHANG CHIEN ,  Chiu-Wen LEE ,  Chang Chi LEE

IPC分类号： H05K1/02 ,  H05K1/11 ,  H05K1/18

CPC分类号： H05K1/0271 ,  H05K1/11 ,  H05K1/182 ,  H05K2201/068 ,  H05K2201/1003

摘要： An electronic device is provided. The electronic device includes a first dielectric layer, an electronic element, an encapsulant, and a second dielectric layer. The first dielectric layer has a first coefficient of thermal expansion (CTE). The electronic element is disposed over the first dielectric layer. The encapsulant encapsulates the electronic element and has a second CTE. The second dielectric layer is disposed over the encapsulant and having a third CTE. The second CTE ranges between the first CTE and the third CTE.

公开(公告)号：US20240153920A1

公开(公告)日：2024-05-09

申请号：US17984187

申请日：2022-11-09

申请人： Advanced Semiconductor Engineering, Inc. ,  UNIVERSAL SCIENTIFIC INDUSTRIAL (SHANGHAI) CO., LTD.

发明人： Yi-Hung HOU ,  Yung-Fa CHEN ,  Sheng-Chia CHEN

IPC分类号： H01L25/07 ,  H01L23/495

CPC分类号： H01L25/071 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/48

摘要： An electronic device is disclosed. The electronic device includes a first conductive plate and a first electronic component. The first conductive plate includes a first connecting portion. The first electronic component supports the first conductive plate through the first connecting portion. The first connecting portion is electrically connected to the first electronic component and configured to buffer stress from the first conductive plate to the first electronic component.