SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
    21.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 有权
    半导体器件制造方法和半导体器件

    公开(公告)号:US20120235302A1

    公开(公告)日:2012-09-20

    申请号:US13398363

    申请日:2012-02-16

    Applicant: Akira FURUYA

    Inventor: Akira FURUYA

    Abstract: A semiconductor manufacturing method includes: forming a seed film including a first metal over a bottom surface and a side wall of an opening portion formed over interlayer insulating films and a field portion located over the interlayer insulating film except the opening portion, forming a resist over the seed film and filling the opening portion with the resist, removing part of the resist, exposing the seed film formed over the upper portion of the side walls of the opening portion and the field portion, forming a cover film including a second metal, whose resistivity is higher than that of the first metal, over the seed film located over the upper portion of the side wall of the opening portion and the field portion, exposing the seed film by removing the resist, and forming a plating film including the first metal over the exposed seed film.

    Abstract translation: 半导体制造方法包括:在层间绝缘膜上形成的开口部的底面和侧壁上形成包括第一金属的种子膜和除了开口部之外的位于层间绝缘膜以上的场部,形成抗蚀剂 种子薄膜并用抗蚀剂填充开口部分,去除抗蚀剂的一部分,暴露形成在开口部分的侧壁的上部上的种子膜和场部分,形成包括第二金属的覆盖膜, 电阻率高于第一金属,位于位于开口部分的侧壁的上部和场部分的种子膜上,通过去除抗蚀剂暴露种子膜,并形成包括第一金属的镀膜 在暴露的种子膜上。

    Method of manufacturing a semiconductor device
    22.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US07883935B2

    公开(公告)日:2011-02-08

    申请号:US12758432

    申请日:2010-04-12

    Applicant: Akira Furuya

    Inventor: Akira Furuya

    Abstract: Aimed at improving adhesiveness between upper and lower interconnects in semiconductor devices, a semiconductor device of the present invention includes a second dielectric multi-layered film formed on a substrate, and containing a lower interconnect; a first dielectric multi-layered film formed on the second dielectric multi-layered film, and having a recess; an MOx film formed on the inner wall of the recess, and containing a metal M and oxygen as major components; an M film formed on the MOx film, and containing the M as a major component; and an electric conductor formed on the M film so as to fill the recess, and containing Cu as a major component, wherein the surficial portion of the interconnect fallen straight under the bottom of the recess has an oxygen concentration of 1% or smaller.

    Abstract translation: 为了提高半导体器件中的上下互连之间的粘合性,本发明的半导体器件包括形成在基板上并包含下互连的第二介质多层膜; 形成在所述第二电介质多层膜上并具有凹部的第一电介质多层膜; 形成在凹部的内壁上并含有金属M和氧作为主要成分的MOx膜; 形成在MOx膜上并含有M作为主要成分的M膜; 以及形成在M膜上的电导体,以填充凹部,并且包含Cu作为主要成分,其中互连的表面部分在凹部的底部下方直线的氧浓度为1%以下。

    Thin film device and method for manufacturing the same
    23.
    发明授权
    Thin film device and method for manufacturing the same 失效
    薄膜器件及其制造方法

    公开(公告)号:US07683269B2

    公开(公告)日:2010-03-23

    申请号:US12053317

    申请日:2008-03-21

    Abstract: A terminal electrode body on a substrate is exposed relative to a resin layer, protruding out beyond the side of the resin layer. That is, the terminal electrode body is not covered by the resin layer. The electronic element is covered by an insulating layer and the terminal electrode body and the electronic element are electrically connected. Hence, an electric signal applied to the terminal electrode body can be transmitted to the electronic element. A cover layer covers the terminal electrode body and the boundary between the terminal electrode body and the resin layer.

    Abstract translation: 基板上的端子电极体相对于树脂层露出,突出超出树脂层的侧面。 也就是说,端子电极体未被树脂层覆盖。 电子元件被绝缘层覆盖,并且端子电极体和电子元件电连接。 因此,施加到端子电极体的电信号可以被传送到电子元件。 覆盖层覆盖端子电极体和端子电极体与树脂层之间的边界。

    ELECTRONIC COMPONENT
    24.
    发明申请
    ELECTRONIC COMPONENT 有权
    电子元件

    公开(公告)号:US20090166074A1

    公开(公告)日:2009-07-02

    申请号:US12344011

    申请日:2008-12-24

    CPC classification number: H01G4/33 H01G4/224 H01G4/228 H01G4/236

    Abstract: The present invention provides an electronic component which is capable of effectively suppressing the characteristic deterioration of the passive element portion. An electronic component comprises a ceramic substrate, a passive element portion on the substrate, an insulator layer which is provided over the passive element portion and comprises a through-hole, a lead terminal which is fitted in the through-hole of the insulator layer and electrically connected to the passive element portion, and an external connection terminal which is electrically connected to the lead terminal. The insulator layer comprises a first face on the side of the passive element portion, a second face on the side opposite the passive element portion, and a third face which connects the first face and the second face and constitutes the peripheral face of the insulator layer, the external connection terminal is in contact with the lead terminal and the second face and the third face of the insulator layer. In a cross-section of the through-hole in a thickness direction of the substrate, a boundary line between the internal surface of the through-hole and the lead terminal is inclined in a direction moving away from a region of the third face with which the external connection terminal is in contact with an end of the boundary line on the side of the first face being taken as a fixed point.

    Abstract translation: 本发明提供能够有效地抑制无源元件部的特性劣化的电子部件。 电子部件包括陶瓷基板,基板上的无源元件部分,设置在无源元件部分上方并包括通孔的绝缘体层,安装在绝缘体层的通孔中的引线端子和 电连接到无源元件部分,以及电连接到引线端子的外部连接端子。 绝缘体层包括无源元件部分侧的第一面,与无源元件部分相对的一侧上的第二面以及连接第一面和第二面的第三面,并构成绝缘体层的外周面 外部连接端子与引线端子和绝缘体层的第二面和第三面接触。 在基板的厚度方向的贯通孔的截面中,贯通孔的内表面与引线端子之间的边界线沿着从第三面的区域移开的方向倾斜, 外部连接端子与第一面侧的边界线的端部接触,作为固定点。

    Thin-film device
    25.
    发明授权
    Thin-film device 有权
    薄膜装置

    公开(公告)号:US07489036B2

    公开(公告)日:2009-02-10

    申请号:US11701458

    申请日:2007-02-02

    CPC classification number: H01L27/016 H01L27/12

    Abstract: A thin-film device incorporates: a substrate; an insulating layer, a lower conductor layer, a dielectric film, an insulating layer, an upper conductor layer and a protection film that are stacked in this order on the substrate; and four terminal electrodes. The four terminal electrodes touch part of end faces of the upper conductor layer, and part of the top surface of the upper conductor layer contiguous to the end faces. The protection film has four concave portions, each of which has a shape that is recessed inward from the edge of the protection film except portions thereof corresponding to these concave portions. The four concave portions expose respective portions of the top surface of the upper conductor layer that touch the four terminal electrodes. The four concave portions accommodate respective portions of the four terminal electrodes.

    Abstract translation: 薄膜器件包括:衬底; 绝缘层,下导体层,电介质膜,绝缘层,上导体层和保护膜,其依次层叠在基板上; 和四个端子电极。 四个端子电极接触上导体层的端面的一部分,并且上导体层的顶表面的与端面相邻的部分。 保护膜具有四个凹部,每个凹部具有从除了与这些凹部对应的部分之外的保护膜的边缘向内凹陷的形状。 四个凹部露出接触四个端子电极的上部导体层的上表面的各个部分。 四个凹部容纳四个端子电极的各部分。

    Deposition apparatus and method for depositing film
    27.
    发明申请
    Deposition apparatus and method for depositing film 有权
    沉积膜及其沉积方法

    公开(公告)号:US20070186849A1

    公开(公告)日:2007-08-16

    申请号:US11704295

    申请日:2007-02-09

    Applicant: Akira Furuya

    Inventor: Akira Furuya

    Abstract: An enhanced utilization efficiency of gases can be presented and an improved deposition characteristics are presented, when a film is deposited with a plurality of gases. A deposition apparatus 100 includes: a reaction chamber 102 for depositing a film; a first gas supply line 112 and a second gas supply line 152 for supplying a first source material A and a gas B to a reaction chamber 102, respectively; and an exciting unit 106 that is capable of exciting a gas supplied in the reaction chamber 102 to form a plasma. In the deposition apparatus 100 having such configuration, a deposition operation is performed by: a first operation for supplying a gas derived from a first source material A and a gas B in the reaction chamber 102 to cause the gas derived from a first source material A adsorbed on the substrate, thereby forming a deposition layer; and a second operation for supplying a second gas in reaction chamber 102, and treating the deposition layer with the gas in a condition of being plasma-excited.

    Abstract translation: 当使用多种气体沉积膜时,可以提供气体的提高的利用效率并提出改进的沉积特性。 沉积设备100包括:用于沉积膜的反应室102; 分别将第一源材料A和气体B分别供应到反应室102中的第一气体供应管线112和第二气体供应管线152; 以及激励单元106,其能够激励在反应室102中供应的气体以形成等离子体。 在具有这种结构的沉积设备100中,通过以下步骤进行沉积操作:第一操作,用于将来自第一源材料A和气体B的气体供应到反应室102中,以产生源自第一源材料A的气体 吸附在基板上,从而形成沉积层; 以及用于在反应室102中供应第二气体并在等离子体激发的条件下用气体处理沉积层的第二操作。

    Thin-film device and method of manufacturing same
    28.
    发明申请
    Thin-film device and method of manufacturing same 有权
    薄膜器件及其制造方法

    公开(公告)号:US20070108553A1

    公开(公告)日:2007-05-17

    申请号:US11583074

    申请日:2006-10-19

    CPC classification number: H01L28/40 H01L27/13

    Abstract: A thin-film device comprises a substrate and a capacitor provided on the substrate. The capacitor incorporates: a lower conductor layer; a dielectric film a portion of which is disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The lower conductor layer has a top surface, a side surface, and a corner portion formed by the top and side surfaces. The upper conductor layer incorporates an upper electrode portion having a bottom surface opposed to the top surface of the lower conductor layer with the dielectric film disposed in between. When seen from above the upper conductor layer, the periphery of the bottom surface of the upper electrode portion is located inside the periphery of the top surface of the lower conductor layer without touching the periphery of the top surface of the lower conductor layer.

    Abstract translation: 薄膜器件包括衬底和设置在衬底上的电容器。 电容器包括:下导体层; 电介质膜,其一部分设置在下导体层上; 以及设置在电介质膜上的上导体层。 下导体层具有顶表面,侧表面和由顶表面和侧表面形成的角部。 上导体层包括具有与下导体层的顶表面相对的底表面的上电极部分,介电膜设置在其间。 当从上部导体层的上方观察时,上部​​电极部的底面的周围位于下部导体层的上表面的周围的内侧,而不会接触下部导体层的上表面的周围。

    Slant engine
    30.
    发明申请
    Slant engine 有权
    倾斜发动机

    公开(公告)号:US20060174851A1

    公开(公告)日:2006-08-10

    申请号:US11348231

    申请日:2006-02-07

    Applicant: Akira Furuya

    Inventor: Akira Furuya

    Abstract: A slant engine for a utility engine which a cylinder is attached to the crankcase with slanted with respect to the a rotational direction of a crankshaft, comprises a reservoir oil tank formed outside of the crankcase at lower portion for reserving lubricant, a communication pipe connected to bottom portions of the reservoir oil tank and the crankcase for communicating the lubricant in the crankcase and the reservoir oil tank, and a vent pipe connected to both of the reservoir oil tank and the inside of the crankcase.

    Abstract translation: 用于相对于曲轴的旋转方向倾斜地连接到曲轴箱的圆柱体用于公用事业发动机的倾斜发动机包括形成在曲轴箱外部的储油槽,用于储存润滑剂,连通管 储油罐油箱的底部和用于连通曲轴箱和油箱油箱中的润滑剂的曲轴箱以及连接到储油罐油箱和曲轴箱内部的排气管。

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