Abstract:
A semiconductor manufacturing method includes: forming a seed film including a first metal over a bottom surface and a side wall of an opening portion formed over interlayer insulating films and a field portion located over the interlayer insulating film except the opening portion, forming a resist over the seed film and filling the opening portion with the resist, removing part of the resist, exposing the seed film formed over the upper portion of the side walls of the opening portion and the field portion, forming a cover film including a second metal, whose resistivity is higher than that of the first metal, over the seed film located over the upper portion of the side wall of the opening portion and the field portion, exposing the seed film by removing the resist, and forming a plating film including the first metal over the exposed seed film.
Abstract:
Aimed at improving adhesiveness between upper and lower interconnects in semiconductor devices, a semiconductor device of the present invention includes a second dielectric multi-layered film formed on a substrate, and containing a lower interconnect; a first dielectric multi-layered film formed on the second dielectric multi-layered film, and having a recess; an MOx film formed on the inner wall of the recess, and containing a metal M and oxygen as major components; an M film formed on the MOx film, and containing the M as a major component; and an electric conductor formed on the M film so as to fill the recess, and containing Cu as a major component, wherein the surficial portion of the interconnect fallen straight under the bottom of the recess has an oxygen concentration of 1% or smaller.
Abstract:
A terminal electrode body on a substrate is exposed relative to a resin layer, protruding out beyond the side of the resin layer. That is, the terminal electrode body is not covered by the resin layer. The electronic element is covered by an insulating layer and the terminal electrode body and the electronic element are electrically connected. Hence, an electric signal applied to the terminal electrode body can be transmitted to the electronic element. A cover layer covers the terminal electrode body and the boundary between the terminal electrode body and the resin layer.
Abstract:
The present invention provides an electronic component which is capable of effectively suppressing the characteristic deterioration of the passive element portion. An electronic component comprises a ceramic substrate, a passive element portion on the substrate, an insulator layer which is provided over the passive element portion and comprises a through-hole, a lead terminal which is fitted in the through-hole of the insulator layer and electrically connected to the passive element portion, and an external connection terminal which is electrically connected to the lead terminal. The insulator layer comprises a first face on the side of the passive element portion, a second face on the side opposite the passive element portion, and a third face which connects the first face and the second face and constitutes the peripheral face of the insulator layer, the external connection terminal is in contact with the lead terminal and the second face and the third face of the insulator layer. In a cross-section of the through-hole in a thickness direction of the substrate, a boundary line between the internal surface of the through-hole and the lead terminal is inclined in a direction moving away from a region of the third face with which the external connection terminal is in contact with an end of the boundary line on the side of the first face being taken as a fixed point.
Abstract:
A thin-film device incorporates: a substrate; an insulating layer, a lower conductor layer, a dielectric film, an insulating layer, an upper conductor layer and a protection film that are stacked in this order on the substrate; and four terminal electrodes. The four terminal electrodes touch part of end faces of the upper conductor layer, and part of the top surface of the upper conductor layer contiguous to the end faces. The protection film has four concave portions, each of which has a shape that is recessed inward from the edge of the protection film except portions thereof corresponding to these concave portions. The four concave portions expose respective portions of the top surface of the upper conductor layer that touch the four terminal electrodes. The four concave portions accommodate respective portions of the four terminal electrodes.
Abstract:
An electronic component having: a substrate, a lower conductor layer provided on the substrate; an inorganic dielectric film that covers the lower conductor layer; and an upper conductor layer having an upper electrode portion provided on the inorganic dielectric film. The lower conductor layer has a lower electrode portion that together with the upper electrode portion and the inorganic dielectric film constitutes a capacitor, and a coil portion that constitutes an inductor. The entire inorganic dielectric film is formed integrally, and the lower conductor layer is in contact only with the substrate, inorganic dielectric film, and upper conductor layer.
Abstract:
An enhanced utilization efficiency of gases can be presented and an improved deposition characteristics are presented, when a film is deposited with a plurality of gases. A deposition apparatus 100 includes: a reaction chamber 102 for depositing a film; a first gas supply line 112 and a second gas supply line 152 for supplying a first source material A and a gas B to a reaction chamber 102, respectively; and an exciting unit 106 that is capable of exciting a gas supplied in the reaction chamber 102 to form a plasma. In the deposition apparatus 100 having such configuration, a deposition operation is performed by: a first operation for supplying a gas derived from a first source material A and a gas B in the reaction chamber 102 to cause the gas derived from a first source material A adsorbed on the substrate, thereby forming a deposition layer; and a second operation for supplying a second gas in reaction chamber 102, and treating the deposition layer with the gas in a condition of being plasma-excited.
Abstract:
A thin-film device comprises a substrate and a capacitor provided on the substrate. The capacitor incorporates: a lower conductor layer; a dielectric film a portion of which is disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The lower conductor layer has a top surface, a side surface, and a corner portion formed by the top and side surfaces. The upper conductor layer incorporates an upper electrode portion having a bottom surface opposed to the top surface of the lower conductor layer with the dielectric film disposed in between. When seen from above the upper conductor layer, the periphery of the bottom surface of the upper electrode portion is located inside the periphery of the top surface of the lower conductor layer without touching the periphery of the top surface of the lower conductor layer.
Abstract:
An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.
Abstract:
A slant engine for a utility engine which a cylinder is attached to the crankcase with slanted with respect to the a rotational direction of a crankshaft, comprises a reservoir oil tank formed outside of the crankcase at lower portion for reserving lubricant, a communication pipe connected to bottom portions of the reservoir oil tank and the crankcase for communicating the lubricant in the crankcase and the reservoir oil tank, and a vent pipe connected to both of the reservoir oil tank and the inside of the crankcase.