Abstract:
A guard ring for a through via, and a method of manufacture thereof, is provided. The guard ring comprises one or more rings around a through via, wherein the rings may be, for example, circular, rectangular, octagon, elliptical, square, or the like. The guard ring may be formed from a contact through an inter-layer dielectric layer and interconnect structures (e.g., vias and lines) extending through the inter-metal dielectric layers. The guard ring may contact a well formed in the substrate.
Abstract:
A device includes a metal pad at a surface of an image sensor chip, wherein the image sensor chip includes an image sensor. A stud bump is disposed over, and electrically connected to, the metal pad. The stud bump includes a bump region, and a tail region connected to the bump region. The tail region includes a metal wire portion substantially perpendicular to a top surface of the metal pad. The tail region is short enough to support itself against gravity.
Abstract:
A fixture includes an elongated rod, a first jaw and a second jaw. The first jaw and the second jaw are assembled with the elongated rod. The second jaw has a pivotal portion and a grip. A trigger is connected outside the pivotal portion. A front chamber is formed in the pivotal portion for receiving a plurality of clasping pieces and a restoring spring penetrated by the elongated rod. The restoring spring pushes the clasping pieces to synchronously drive a push rod connected to the trigger. Each of the clasping pieces is formed with a groove facing the restoring spring. The restoring spring is formed with a guiding section bent toward the clasping pieces. The guiding section is disposed in the groove to guide the second jaw to advance smoothly.
Abstract:
Tin snips includes two cutting blades intersecting each other for cutting and two handles for activating the cutting of the two cutting blades. A safety device is disposed in the tin snips for preventing the two cutting blades from opening. The safety device includes a protrusion extending from an edge of one of the handles, a recess provided in an edge of the handle having the protrusion, and a buckling element connected to the other of the handles. The buckling element includes two movable portions rotatable to cover a position where the two handles are drawn to a closed position, an engaging portion disposed between the two movable portions to cross the protrusion to engage into the recess when the movable portions rotate, and a restricting portion connected between the two movable portions and the engaging portion.
Abstract:
A network of collection, charging and distribution machines collect, charge and distribute portable electrical energy storage devices (e.g., batteries, supercapacitors or ultracapacitors). To charge, the machines employ electrical current from an external source, such as the electrical grid or an electrical service of an installation location. Users may also use portable charging devices that authenticate portable electrical energy storage devices or are authenticated by portable electrical energy storage devices before the charging is allowed or enabled. This authentication may be via wired or wireless communication channels between the portable charging device and portable electrical energy storage device, such as via near field communication (NFC) channels.
Abstract:
A semiconductor device and method for making such that provides improved mechanical strength is disclosed. The semiconductor device comprises a semiconductor substrate; an adhesion layer disposed over the semiconductor substrate; and a porous low-k film disposed over the semiconductor substrate, wherein the porous low-k film comprises a porogen and a composite bonding structure including at least one Si—O—Si bonding group and at least one bridging organic functional group.
Abstract:
The present disclosure is directed to a method of manufacturing an interconnect structure in which a low-k dielectric layer is formed over a semiconductor substrate followed by formation of a copper or copper alloy layer over the low-k dielectric layer. The copper or copper alloy layer is patterned and etched to form a copper body having recesses, which are then filled with a low-k dielectric material. The method allows for formation of a damascene structures without encountering the various problems presented by non-planar features and by porus low-K dielectric damage.
Abstract:
A mixed water control valve having a body and a spindle is disclosed. The body has two inlet pipes and two outlet pipes which are longitudinally corresponding to the two inlet pipes. The two inlet pipes are branched into a upper inlet pipe and a lower inlet pipe which are disposed in different height positions. The spindle is rotatably assembled in the body. The spindle has an upper and a lower inlets corresponding to the height of the upper and the lower inlet pipe and. The spindle also has an upper outlet and a lower outlet respectively corresponding to the two outlet pipe. Thereby, the spindle is detachable and convenient to repair and replace and the spindle is also capable of changing mounting directions to change the flowing directions of water and then to match the different arrangements of the inlet pipes of cold and hot water.
Abstract:
An embodiment is a package-on-package (PoP) device comprising a first package on a first substrate and a second package over the first package. A plurality of wire sticks disposed between the first package and the second package and the plurality of wire sticks couple the first package to the second package. Each of the plurality of wire sticks comprise a conductive wire of a first height affixed to a bond pad on the first substrate and each of the plurality of wire sticks is embedded in a solder joint.
Abstract:
A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed in the insulating layer either below or above the TMR component. The electrode array includes a number of separate electrodes. The electrodes are electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode. The tunneling magnetoresistance sensor in this configuration can be manufactured with a reduced cost and maintain the high performance at the same time.