公开(公告)号：US07030335B2

公开(公告)日：2006-04-18

申请号：US10028922

申请日：2001-12-19

Applicant: Daniel J. Hoffman ,  Gerald Zheyao Yin ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

Inventor： Daniel J. Hoffman ,  Gerald Zheyao Yin ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

IPC: B23K10/00

CPC classification number: H01J37/32082 ,  H01J37/32183

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.

公开(公告)号：US06667577B2

公开(公告)日：2003-12-23

申请号：US10025408

申请日：2001-12-18

Applicant: Steven Shannon ,  Daniel Hoffman ,  Chunshi Cui ,  Yan Ye ,  Gerardo Delgadino ,  Douglas A. Buchberger, Jr. ,  Shiang-Bau Wang ,  Robert B. Hagen ,  Matthew L Miller ,  Stephen Thai

Inventor： Steven Shannon ,  Daniel Hoffman ,  Chunshi Cui ,  Yan Ye ,  Gerardo Delgadino ,  Douglas A. Buchberger, Jr. ,  Shiang-Bau Wang ,  Robert B. Hagen ,  Matthew L Miller ,  Stephen Thai

IPC: H01J724

CPC classification number: H01J37/321

Abstract: An RF power applicator of the reactor includes inner and outer conductive radial spokes. The set of inner conductive spokes extends radially outwardly from and is electrically connected to the conductive post toward the conductive side wall. The set of outer conductive spokes extends radially inwardly toward the conductive post from and is electrically connected to the conductive side wall. In this way, the inner and outer sets of conductive spokes are electrically connected together, the combination of the inner and outer set of spokes with the conductive enclosure having a fundamental resonant frequency inversely proportional to the height of the conductive enclosure and the lengths of the inner and outer set of conductive spokes. An RF source power generator is coupled across the RF power applicator and has an RF frequency corresponding to the fundamental resonant frequency.

Abstract translation: 反应器的RF功率施加器包括内部和外部导电的径向辐条。 一组内导电轮辐径向向外延伸并且与导电柱电连接到导电侧壁。 一组外导电轮辐径向向内延伸到导电柱，并与导电侧壁电连接。 以这种方式，导电辐条的内部和外部组电连接在一起，内部和外部组的辐条与导电外壳的组合具有与导电外壳的高度成反比的基本谐振频率和 内外套导电辐条。 RF源功率发生器耦合在RF功率施加器上并且具有对应于基本谐振频率的RF频率。

公开(公告)号：US20150371877A1

公开(公告)日：2015-12-24

申请号：US14840204

申请日：2015-08-31

Applicant: XING LIN ,  DOUGLAS A. BUCHBERGER, JR. ,  XIAOPING ZHOU ,  ANDREW NGUYEN ,  ANCHEL SHEYNER

Inventor： XING LIN ,  DOUGLAS A. BUCHBERGER, JR. ,  XIAOPING ZHOU ,  ANDREW NGUYEN ,  ANCHEL SHEYNER

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32532 ,  H01J37/32577 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/6831

Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

Abstract translation: 本文公开了用于处理衬底的装置。 在一些实施例中，衬底支撑件可以包括具有用于支撑衬底的支撑表面的衬底支撑件，衬底支撑件具有中心轴线; 设置在所述基板支撑件内的第一电极，用于当设置在所述支撑表面上时向基板提供RF功率; 内部导体，其围绕第一电极的与支撑表面相对的表面的中心耦合到第一电极，其中内部导体是管状的，并且从第一电极沿着远离支撑表面的方向平行于中心轴并围绕中心轴线延伸 的基板支撑; 设置在内部导体周围的外部导体; 以及设置在所述内部和外部导体之间的外部电介质层，所述外部电介质层将所述外部导体与所述内部导体电隔离。 外部导体可以耦合到电气接地。

公开(公告)号：US08617351B2

公开(公告)日：2013-12-31

申请号：US11046656

申请日：2005-01-28

Applicant: Daniel J. Hoffman ,  Roger A. Lindley ,  Michael C. Kutney ,  Martin J. Salinas ,  Hamid F. Tavassoli ,  Keiji Horioka ,  Douglas A. Buchberger, Jr.

Inventor： Daniel J. Hoffman ,  Roger A. Lindley ,  Michael C. Kutney ,  Martin J. Salinas ,  Hamid F. Tavassoli ,  Keiji Horioka ,  Douglas A. Buchberger, Jr.

IPC: C23F1/00 ,  H01L21/306 ,  C03C15/00

CPC classification number: H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

Abstract: A plasma reactor for processing a workpiece, includes a vacuum chamber defined by a sidewall and ceiling, and a workpiece support pedestal having a workpiece support surface in the chamber and facing the ceiling and including a cathode electrode. An RF power generator is coupled to the cathode electrode. Plasma distribution is controlled by an external annular inner electromagnet in a first plane overlying the workpiece support surface, an external annular outer electromagnet in a second plane overlying the workpiece support surface and having a greater diameter than the inner electromagnet, and an external annular bottom electromagnet in a third plane underlying the workpiece support surface. D.C. current supplies are connected to respective ones of the inner, outer and bottom electromagnets.

Abstract translation: 一种用于加工工件的等离子体反应器，包括由侧壁和天花板限定的真空室，以及在所述室中具有工件支撑表面并且面向天花板并且包括阴极电极的工件支撑基座。 RF发生器耦合到阴极电极。 等离子体分布由覆盖工件支撑表面的第一平面中的外部环形内部电磁体控制，覆盖工件支撑表面并且具有比内部电磁体更大的直径的第二平面中的外部环形外部电磁体以及外部环形底部电磁体 在工件支撑表面下方的第三平面内。 内部，外部和底部电磁铁中的相应电源连接到电流源。

公开(公告)号：US08607731B2

公开(公告)日：2013-12-17

申请号：US12144463

申请日：2008-06-23

Applicant: Daniel J. Hoffman ,  Douglas A. Buchberger, Jr. ,  Semyon L. Kats ,  Dan Katz

Inventor： Daniel J. Hoffman ,  Douglas A. Buchberger, Jr. ,  Semyon L. Kats ,  Dan Katz

IPC: C23C16/00 ,  C23C16/50 ,  C23F1/00

CPC classification number: H01L21/6833

Abstract: An apparatus for generating uniform plasma across and beyond the peripheral edge of a substrate has a dielectric body with an upper electrode and an annular electrode embedded therein. The outer perimeter of the upper electrode overlaps the inner perimeter of the annular electrode. In one embodiment, the upper electrode and the annular electrode are electrically coupled by molybdenum vias. In one embodiment, the upper electrode is coupled to a DC power source to provide electrostatic force for chucking the substrate. In one embodiment, the upper electrode is coupled to an RF source for exciting one or more processing gasses into plasma for substrate processing.

Abstract translation: 用于在衬底的周边边缘上产生均匀等离子体的装置具有电介质体，其具有嵌入其中的上电极和环形电极。 上电极的外周与环形电极的内周重叠。 在一个实施例中，上电极和环形电极通过钼通孔电耦合。 在一个实施例中，上电极耦合到DC电源以提供用于夹持衬底的静电力。 在一个实施例中，上电极耦合到RF源，用于将一个或多个处理气体激发成用于衬底处理的等离子体。

公开(公告)号：US20130087286A1

公开(公告)日：2013-04-11

申请号：US13629267

申请日：2012-09-27

Applicant: James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H05H1/46

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32743 ,  H01J37/32834 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3344 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract translation: 本发明的实施例提供了一种等离子体室设计，其允许通过室极性对称的电，热和气流传导。 通过提供这种对称性，在室内形成的等离子体自然地改善了设置在室的处理区域中的衬底的表面上的均匀性。 此外，与常规系统相比，诸如提供操纵上电极和下电极之间的间隙以及气体入口和正被处理的衬底之间的间隙的其它腔室添加允许更好地控制等离子体处理和均匀性。

公开(公告)号：US20120091104A1

公开(公告)日：2012-04-19

申请号：US13081412

申请日：2011-04-06

Applicant: Hamid Tavassoli ,  Surajit KUMAR ,  Kallol Bera ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

Inventor： Hamid Tavassoli ,  Surajit KUMAR ,  Kallol Bera ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

IPC: B23K10/00 ,  B23B31/28

CPC classification number: B23B31/28 ,  B23B2231/24 ,  B23Q3/15 ,  H01L21/67069 ,  H01L21/6833 ,  H05H1/46 ,  Y10T279/23

Abstract: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

Abstract translation: 一种静电卡盘组件，包括具有顶表面以支撑工件的电介质层。 布置在电介质层下方的冷却通道底座包括设置在顶表面的内部下方的多个内部流体导管，以及设置在顶部表面的外部部分下方的多个外部流体导管。 卡盘组件包括设置在内部和外部流体管道之间的冷却通道底部内的热断裂。 卡盘组件包括布置在冷却通道底部和底板下方的流体分配板，用于将从公共输入端输送的传热流体分配到每个内部或外部流体导管。 内部输入歧管的分支可以具有基本相等的流体电导。

公开(公告)号：US08092638B2

公开(公告)日：2012-01-10

申请号：US11409292

申请日：2006-04-21

Applicant: Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

Inventor： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67109 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/6831

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.

Abstract translation: 用于处理工件的等离子体反应器包括反应室，用于支撑工件的室内的静电卡盘，耦合以向静电卡盘施加RF功率的RF等离子体偏置功率发生器和在静电卡盘内具有蒸发器的制冷回路， 制冷剂入口和制冷剂出口。 优选地，蒸发器包括分布在静电卡盘的顶表面下方的平面中的曲折通道。 优选地，蒸发器内的制冷剂在气相和液相之间分配。 结果，静电吸盘和蒸发器内的制冷剂之间的热传递是恒温过程。 该特征改善了静电卡盘的直径上的温度分布的均匀性。

公开(公告)号：US20110297650A1

公开(公告)日：2011-12-08

申请号：US13085070

申请日：2011-04-12

Applicant: Hamid Tavassoli ,  Surajit Kumar ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

Inventor： Hamid Tavassoli ,  Surajit Kumar ,  Shane C. Nevil ,  Douglas A. Buchberger, JR.

IPC: B23K10/00 ,  B23B31/28

CPC classification number: H01L21/67109 ,  H01L21/6831 ,  H01L21/68792

Abstract: A triaxial rod assembly for providing both RF power and DC voltage to a chuck assembly that supports a workpiece in a processing chamber during a manufacturing operation. In embodiments, a rod assembly includes a center conductor to be coupled to a chuck electrode for providing DC voltage to clamp a workpiece. Concentrically surrounding the center conductor is an annular RF transmission line to be coupled to an RF powered base to provide RF power to the chuck assembly. An insulator is disposed between the center conductor and RF transmission line. Concentrically surrounding the RF transmission line is a ground plane conductor coupled to a grounded base of the chuck to provide a reference voltage relative to the DC voltage. An insulator is disposed between the RF transmission line and the ground plane conductor.

Abstract translation: 一种三轴杆组件，用于在制造操作期间向卡盘组件提供RF功率和DC电压，该卡盘组件在处理室中支撑工件。 在实施例中，杆组件包括要耦合到卡盘电极的中心导体，用于提供直流电压以夹紧工件。 集中地围绕中心导体是环形RF传输线，其被耦合到RF供电底座以向卡盘组件提供RF功率。 绝缘体设置在中心导体和RF传输线之间。 围绕RF传输线的是一个接地平面导体，其耦合到卡盘的接地基座，以提供相对于直流电压的参考电压。 绝缘体设置在RF传输线和接地平面导体之间。

公开(公告)号：US20110186545A1

公开(公告)日：2011-08-04

申请号：US12905624

申请日：2010-10-15

Applicant: Chetan MAHADESWARASWAMY ,  Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Chunlei ZHANG ,  Yashaswini B. PATTAR ,  Duy D. NGUYEN ,  Tina TSONG ,  Shane C. NEVIL ,  Douglas A. BUCHBERGER, JR. ,  Fernando M. SILVEIRA ,  Brad L. MAYS ,  Kartik RAMASWAMY ,  Hamid NOORBAKHSH

Inventor： Chetan MAHADESWARASWAMY ,  Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Chunlei ZHANG ,  Yashaswini B. PATTAR ,  Duy D. NGUYEN ,  Tina TSONG ,  Shane C. NEVIL ,  Douglas A. BUCHBERGER, JR. ,  Fernando M. SILVEIRA ,  Brad L. MAYS ,  Kartik RAMASWAMY ,  Hamid NOORBAKHSH

IPC: C23F1/08 ,  C23F1/00 ,  C23C16/50 ,  C23C16/458 ,  C23C16/52 ,  G05D23/00

CPC classification number: H01J37/32009 ,  G05B6/02 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/334 ,  H05H1/0081

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。