公开(公告)号：US08896134B2

公开(公告)日：2014-11-25

申请号：US13642325

申请日：2011-04-18

Applicant: Naohide Takamoto ,  Goji Shiga

Inventor： Naohide Takamoto ,  Goji Shiga

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/683 ,  H01L21/78 ,  H01L21/50 ,  H01L23/00 ,  H01L23/31 ,  H01L23/544

Abstract: The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23° C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23° C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.

公开(公告)号：US08513816B2

公开(公告)日：2013-08-20

申请号：US13173226

申请日：2011-06-30

Applicant: Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

Inventor： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC: H01L23/48 ,  H01L21/50 ,  C09K5/00 ,  B32B7/12 ,  B32B3/00

CPC classification number: C08K3/22 ,  C08K2201/001 ,  C08K2201/005 ,  C09J163/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/295 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81815 ,  H01L2224/83022 ,  H01L2224/83102 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/24355 ,  Y10T428/2848 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00

Abstract: The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on the back surface of a semiconductor element to be flip chip-connected onto an adherend, the film containing a resin and a thermoconductive filler, in which the content of the thermoconductive filler is at least 50% by volume of the film, and the thermoconductive filler has an average particle size relative to the thickness of the film of at most 30% and has a maximum particle size relative to the thickness of the film of at most 80%.

Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，其将被设置在半导体元件的背面上以便倒装芯片连接到被粘物上，该薄膜含有树脂和导热填料，其中 导电填料的含量至少为膜的50体积％，并且导热填料相对于膜厚度的平均粒径为至多30％，并且具有相对于膜的厚度的最大粒径 电影最多80％。

公开(公告)号：US20130095639A1

公开(公告)日：2013-04-18

申请号：US13642229

申请日：2011-04-18

Applicant: Naohide Takamoto ,  Goji Shiga

Inventor： Naohide Takamoto ,  Goji Shiga

IPC: H01L21/78

CPC classification number: H01L21/78 ,  C09J7/20 ,  C09J2203/326 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/293 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68377 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/16258 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/3025 ,  H01L2924/351 ,  Y10T428/14 ,  H01L2924/01082 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00

Abstract: The present invention relates to a film for back surface of flip-chip semiconductor, which is to be formed on a back surface of a semiconductor element flip-chip connected onto an adherend, wherein an amount of shrinkage of the film for back surface of flip-chip semiconductor due to thermal curing is 2% by volume or more and not more than 30% by volume relative to a total volume of the film for back surface of flip-chip semiconductor before the thermal curing. According to the film for back surface of flip-chip semiconductor according to the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, in the film for back surface of flip-chip semiconductor according to the present invention, since an amount of shrinkage due to thermal curing is 2% by volume or more relative to a total volume of the film for back surface of flip-chip semiconductor before the thermal curing, a warp of a semiconductor element to be generated at the time of flip-chip connecting the semiconductor element onto an adherend can be effectively suppressed or prevented.

Abstract translation: 本发明涉及一种倒装芯片半导体背面用薄膜，其用于形成在与被粘物相连的半导体元件倒装芯片的背面上，其中，用于后翻表面的薄膜的收缩量 由于热固化，芯片半导体相对于热固化前的倒装芯片用半导体膜的总体积为2体积％以上且30体积％以下。 根据本发明的倒装芯片半导体的背面用薄膜，由于形成在倒装芯片连接在被粘物上的半导体元件的背面，所以具有保护半导体元件的功能。 另外，在本发明的倒装芯片半导体的背面用膜中，由于热固化时的收缩量相对于翻转半导体背面用膜的总体积为2体积％以上， 在热固化之前的芯片半导体，可以有效地抑制或防止将半导体元件倒装芯片连接到被粘物体时产生的半导体元件的翘曲。

公开(公告)号：US20120028380A1

公开(公告)日：2012-02-02

申请号：US13192530

申请日：2011-07-28

Applicant: Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

Inventor： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC: H01L21/78 ,  B32B3/00 ,  B32B37/00 ,  H01L21/66

CPC classification number: H01L21/6836 ,  B32B5/022 ,  B32B5/028 ,  B32B7/12 ,  B32B15/08 ,  B32B25/08 ,  B32B25/12 ,  B32B25/14 ,  B32B25/18 ,  B32B27/08 ,  B32B27/10 ,  B32B27/12 ,  B32B27/281 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B27/38 ,  B32B29/002 ,  B32B37/12 ,  B32B2250/44 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/302 ,  B32B2307/306 ,  B32B2307/414 ,  B32B2307/514 ,  B32B2307/54 ,  B32B2307/732 ,  B32B2457/14 ,  H01L21/78 ,  H01L22/20 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68386 ,  H01L2924/014 ,  Y10T156/10 ,  Y10T428/24355

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material having an asperities-formed surface, and a pressure-sensitive adhesive layer laminated on the base material, and a film for semiconductor back surface laminated on the pressure-sensitive adhesive layer of the dicing tape, in which the dicing tape has a haze of at most 45%.

Abstract translation: 本发明涉及一种半导体背面用切割带一体化膜，其特征在于，包括：具有凹凸形成面的基材和层叠在基材上的粘合剂层的切割带，以及用于 半导体背表面层叠在切割带的压敏粘合剂层上，其中切割带的雾度为至多45％。

公开(公告)号：US20120025404A1

公开(公告)日：2012-02-02

申请号：US13192068

申请日：2011-07-27

Applicant: Goji SHIGA ,  Naohide TAKAMOTO ,  Fumiteru ASAI

Inventor： Goji SHIGA ,  Naohide TAKAMOTO ,  Fumiteru ASAI

IPC: H01L23/28 ,  B32B7/12 ,  H01L21/56

CPC classification number: H01L23/3164 ,  C09J163/00 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/92 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68386 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00

Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on the back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface having a tensile storage elastic modulus at 25° C. after thermal curing within a range of from 10 GPa to 30 GPa, in which the tensile storage elastic modulus at 25° C. after thermal curing of the film for flip chip type semiconductor back surface falls within a range of from 4 times to 20 times the tensile storage elastic modulus at 25° C. before thermal curing thereof.

Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在与被粘物相连的半导体元件倒装芯片的背面上，该倒装芯片型半导体背表面膜的拉伸储能弹性模量为25 在热固化后在10GPa至30GPa的范围内的热固化温度，其中用于倒装芯片型半导体背表面的膜的热固化后25℃下的拉伸储存弹性模量落在4倍 至25℃下的拉伸储存弹性模量的20倍。

公开(公告)号：US20120018902A1

公开(公告)日：2012-01-26

申请号：US13184994

申请日：2011-07-18

Applicant: Naohide TAKAMOTO ,  Goji SHIGA ,  Fumiteru ASAI

Inventor： Naohide TAKAMOTO ,  Goji SHIGA ,  Fumiteru ASAI

IPC: H01L23/48 ,  B32B27/20 ,  C08L71/10 ,  H01L21/78

CPC classification number: C09J163/00 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface containing an inorganic filler in an amount within a range of 70% by weight to 95% by weight based on the whole of the film for flip chip type semiconductor back surface.

Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在与被粘物相连的半导体元件倒装芯片的背面上，所述薄膜半导体背面的薄膜包含无机填料的量 基于用于倒装芯片型半导体背表面的整个膜的70重量％至95重量％的范围。

公开(公告)号：US09196533B2

公开(公告)日：2015-11-24

申请号：US13642229

申请日：2011-04-18

Applicant: Naohide Takamoto ,  Goji Shiga

Inventor： Naohide Takamoto ,  Goji Shiga

IPC: H01L21/00 ,  H01L23/28 ,  H01L23/29 ,  H01L21/78 ,  H01L21/683 ,  C09J7/02 ,  H01L23/00 ,  H01L21/56

CPC classification number: H01L21/78 ,  C09J7/20 ,  C09J2203/326 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/293 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68377 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/16258 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/3025 ,  H01L2924/351 ,  Y10T428/14 ,  H01L2924/01082 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00

Abstract: The present invention relates to a film for back surface of flip-chip semiconductor, which is to be formed on a back surface of a semiconductor element flip-chip connected onto an adherend, wherein an amount of shrinkage of the film for back surface of flip-chip semiconductor due to thermal curing is 2% by volume or more and not more than 30% by volume relative to a total volume of the film for back surface of flip-chip semiconductor before the thermal curing. According to the film for back surface of flip-chip semiconductor according to the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, in the film for back surface of flip-chip semiconductor according to the present invention, since an amount of shrinkage due to thermal curing is 2% by volume or more relative to a total volume of the film for back surface of flip-chip semiconductor before the thermal curing, a warp of a semiconductor element to be generated at the time of flip-chip connecting the semiconductor element onto an adherend can be effectively suppressed or prevented.

Abstract translation: 本发明涉及一种倒装芯片半导体背面用薄膜，其用于形成在与被粘物相连的半导体元件倒装芯片的背面上，其中，用于后翻表面的薄膜的收缩量 由于热固化，芯片半导体相对于热固化前的倒装芯片用半导体膜的总体积为2体积％以上且30体积％以下。 根据本发明的倒装芯片半导体的背面用薄膜，由于形成在倒装芯片连接在被粘物上的半导体元件的背面，所以具有保护半导体元件的功能。 另外，在本发明的倒装芯片半导体的背面用膜中，由于热固化时的收缩量相对于翻转半导体背面用膜的总体积为2体积％以上， 在热固化之前的芯片半导体，可以有效地抑制或防止将半导体元件倒装芯片连接到被粘物体时产生的半导体元件的翘曲。

公开(公告)号：US09035466B2

公开(公告)日：2015-05-19

申请号：US12975641

申请日：2010-12-22

Applicant: Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

Inventor： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

IPC: H01L23/48 ,  H01L21/50 ,  H01L21/683 ,  H01L21/67 ,  H01L23/00

CPC classification number: H01L21/6836 ,  H01L21/67132 ,  H01L23/562 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68377 ,  H01L2224/81201 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10T428/28 ,  Y10T428/2848 ,  H01L2924/00

Abstract: The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface contains a black pigment.

Abstract translation: 本发明提供一种半导体背面用切割带一体膜，其特征在于，包括：基材的切割带和设置在基材上的粘合剂层; 以及用于倒装芯片型半导体背面的膜包含黑色颜料的压敏粘合剂层上的倒装芯片型半导体背面的膜。

公开(公告)号：US08722517B2

公开(公告)日：2014-05-13

申请号：US13088738

申请日：2011-04-18

Applicant: Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai ,  Toshimasa Sugimura

Inventor： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai ,  Toshimasa Sugimura

IPC: H01L21/00

CPC classification number: H01L21/6836 ,  C09J7/22 ,  C09J7/38 ,  C09J2203/326 ,  C09J2205/31 ,  H01L21/78 ,  H01L23/544 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2223/54486 ,  H01L2224/16225 ,  H01L2924/12042 ,  Y10T428/1467 ,  Y10T428/1471 ,  Y10T428/28 ,  H01L2924/00

Abstract: The present invention provides a dicing tape-integrated film for semiconductor back surface, including a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape, the dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material, the film for flip chip type semiconductor back surface being formed on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer whose pressure-sensitive adhesive force toward the film for flip chip type semiconductor back surface is decreased by irradiation with a radiation ray.

Abstract translation: 本发明提供了一种用于半导体背面的切割带集成膜，包括用于倒装芯片型半导体背表面的膜，用于保护连接到被粘物上的半导体元件倒装芯片的后表面和切割带，切割带 包括基材和设置在基材上的压敏粘合剂层，在压敏粘合剂层上形成用于倒装芯片型半导体背表面的膜，其中压敏粘合剂层是可辐射固化压力 敏感粘合剂层，其通过用辐射线照射而降低了对于倒装芯片型半导体背表面的膜的压敏粘合力。

公开(公告)号：US08679931B2

公开(公告)日：2014-03-25

申请号：US13191697

申请日：2011-07-27

Applicant: Fumiteru Asai ,  Goji Shiga ,  Naohide Takamoto

Inventor： Fumiteru Asai ,  Goji Shiga ,  Naohide Takamoto

IPC: H01L21/00 ,  H01L21/331

CPC classification number: B32B7/06 ,  B32B7/02 ,  B32B7/12 ,  C09J7/20 ,  C09J201/00 ,  H01L21/563 ,  H01L21/68 ,  H01L21/6836 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2223/54486 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/8101 ,  H01L2224/81815 ,  H01L2224/83007 ,  H01L2224/83104 ,  H01L2924/12042 ,  Y10T428/24942 ,  Y10T428/26 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.

Abstract translation: 本发明涉及一种半导体背面用切割带一体膜，其特征在于，包括：依次层叠有基材层，第一粘合剂层和第二粘合剂层的切割带， 在第一粘合剂层和第二压敏粘合剂层之间的剥离强度Y大于切割带的第二粘合剂层上的剥离强度X的层叠在半导体背面的半导体背面的膜， 第二粘合剂层和半导体背面用膜，剥离强度X为0.01〜0.2N / 20mm，剥离强度Y为0.2〜10N / 20mm。