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39 条记录 (耗时 0.027 秒)

    Multi-junction solar cells and methods and apparatuses for forming the same
    21.
    发明授权
    Multi-junction solar cells and methods and apparatuses for forming the same 失效
    多结太阳能电池及其形成方法和装置

    公开(公告)号：US08203071B2

    公开(公告)日：2012-06-19

    申请号：US12178289

    申请日：2008-07-23

    申请人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

    发明人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

    IPC分类号： H01L31/00

    CPC分类号： H01L31/1824 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. Embodiments of the present invention also include an improved thin film silicon solar cell, and methods and apparatus for forming the same, where one or more of the layers in the solar cell comprises at least one amorphous silicon layer that has improved electrical characteristics and mechanical properties, and is capable of being deposited at rates many times faster than conventional amorphous silicon deposition processes.

    摘要翻译： 本发明的实施例一般涉及太阳能电池及其形成方法和装置。 更具体地，本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 本发明的实施例还包括改进的薄膜硅太阳能电池及其形成方法和装置，其中太阳能电池中的一个或多个层包括至少一个具有改善的电特性和机械性能的非晶硅层 ，并且能够以比常规非晶硅沉积工艺快许多倍的速率沉积。

    Microcrystalline silicon deposition for thin film solar applications
    23.
    发明授权
    Microcrystalline silicon deposition for thin film solar applications 失效
    微晶硅沉积用于薄膜太阳能应用

    公开(公告)号：US07919398B2

    公开(公告)日：2011-04-05

    申请号：US12493020

    申请日：2009-06-26

    申请人： Yong Kee Chae ,  Soo Young Choi ,  Shuran Sheng

    发明人： Yong Kee Chae ,  Soo Young Choi ,  Shuran Sheng

    IPC分类号： H01L21/20

    CPC分类号： H01L31/075 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.

    摘要翻译： 权利要求中所述的本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 在一个实施例中，提供了一种在衬底上形成薄膜多结太阳能电池的方法。 该方法包括将基底定位在反应区中，向反应区提供气体混合物，其中气体混合物包含含硅化合物和氢气，在第一个衬底上形成本征型微晶硅层的第一区域 沉积速率，以高于第一沉积速率的第二沉积速率在衬底上形成本征型微晶硅层的第二区域，以及在第三沉积速率下在衬底上形成本征型微晶硅层的第三区域 比第二沉积速率。

    METHODS FOR DEPOSITING A SILICON LAYER ON A LASER SCRIBED TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS
    26.
    发明申请
    METHODS FOR DEPOSITING A SILICON LAYER ON A LASER SCRIBED TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS 失效
    用于在激光可透过导电氧化物层上沉积硅层的方法，适用于太阳能电池应用

    公开(公告)号：US20080289687A1

    公开(公告)日：2008-11-27

    申请号：US11752823

    申请日：2007-05-23

    申请人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    发明人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

    IPC分类号： H01L31/04

    CPC分类号： H01L31/022466 ,  H01L31/04 ,  H01L31/1884 ,  Y02E10/50 ,  Y10S438/94

    摘要： Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. The method includes a method of laser scribing a TCO layer for solar cell applications. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include laser scribing a cell-integrated region of a TCO layer disposed on a substrate for solar applications, the TCO layer having a laser scribing free periphery region outward of the cell-integrated region, the periphery region having a width between about 10 mm and about 30 mm measured from an edge of the substrate, transferring the scribed substrate into a deposition chamber, and depositing a silicon containing layer on the TCO layer in the deposition chamber.

    摘要翻译： 提供了减少传导导电氧化物（TCO）层缺陷的方法和装置。 该方法包括激光划片用于太阳能电池应用的TCO层的方法。 在一个实施例中，用于在透射导电氧化物（TCO）层上沉积硅层的方法可以包括激光刻划设置在用于太阳能应用的衬底上的TCO层的电池集成区域，TCO层具有激光划线自由周边 所述外围区域具有从所述基板的边缘测量的约10mm至约30mm之间的宽度，将所述划线基板转印到沉积室中，并且在所述TCO层上沉积含硅层 在沉积室中。

    BUFFER LAYER FOR IMPROVING THE PERFORMANCE AND STABILITY OF SURFACE PASSIVATION OF SILICON SOLAR CELLS
    29.
    发明申请
    BUFFER LAYER FOR IMPROVING THE PERFORMANCE AND STABILITY OF SURFACE PASSIVATION OF SILICON SOLAR CELLS 审中-公开
    用于改善硅太阳能电池表面钝化性能和稳定性的缓冲层

    公开(公告)号：US20130186464A1

    公开(公告)日：2013-07-25

    申请号：US13733825

    申请日：2013-01-03

    申请人： Shuran Sheng ,  Lin Zhang

    发明人： Shuran Sheng ,  Lin Zhang

    IPC分类号： H01L31/0216 ,  H01L31/18

    CPC分类号： H01L31/02167 ,  H01L31/02168 ,  H01L31/068 ,  H01L31/18 ,  Y02E10/547

    摘要： Embodiments of the present invention generally relate to the fabrication of solar cells and more specifically to a buffer layer for improving the performance and stability of surface passivation of Si solar cells. Generally, a passivation layer stack containing a buffer layer (interlayer) is formed on a surface of the silicon-based substrate. In one embodiment, the passivation layer stack may be formed on the back surface of the substrate. In another embodiment, the passivation layer stack is formed on the back surface of the substrate and a front emitter region (light receiving surface) of the substrate.

    摘要翻译： 本发明的实施方案一般涉及太阳能电池的制造，更具体地涉及用于提高Si太阳能电池的表面钝化的性能和稳定性的缓冲层。 通常，在硅基基板的表面上形成包含缓冲层（中间层）的钝化层堆叠。 在一个实施例中，钝化层堆叠可以形成在衬底的背面上。 在另一个实施例中，钝化层堆叠形成在衬底的背面和衬底的前发射极区（光接收表面）上。