公开(公告)号：US20230363279A1

公开(公告)日：2023-11-09

申请号：US18353980

申请日：2023-07-18

Applicant: Soitec

Inventor： Cédric Charles-Alfred

IPC: H10N30/085 ,  H10N30/072 ,  H10N30/853

CPC classification number: H10N30/085 ,  H10N30/072 ,  H10N30/853 ,  H10N30/8542 ,  H10N30/8554 ,  Y10T29/42 ,  H01L2221/68363 ,  H10N30/04

Abstract: A method for transferring a piezoelectric layer from a donor substrate onto a support substrate comprises the steps of: a) providing a predetermined splitting area in a piezoelectric donor substrate, b) attaching the piezoelectric donor substrate to a support substrate to form an assembly, and c) detaching the piezoelectric layer from the piezoelectric donor substrate comprising applying an electric field. By using the electric field, the detachment step can be carried out at low temperatures. A detaching chamber for carrying out at least a portion of such a method includes one or two chucks comprising first and/or second electrodes for applying an electric field to a piezoelectric layer.

公开(公告)号：US11776843B2

公开(公告)日：2023-10-03

申请号：US17440450

申请日：2020-03-25

Applicant: Soitec

Inventor： Didier Landru ,  Bruno Ghyselen

IPC: H01L21/762 ,  H01L21/265 ,  H01L21/78

CPC classification number: H01L21/76254 ,  H01L21/26506 ,  H01L21/7813

Abstract: A process for transferring blocks from a donor to a receiver substrate, comprises:



arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.

公开(公告)号：US11744154B2

公开(公告)日：2023-08-29

申请号：US16322777

申请日：2017-08-01

Applicant: Soitec

Inventor： Cédric Charles-Alfred

IPC: H10N30/072 ,  H10N30/085 ,  H10N30/853 ,  H10N30/04

CPC classification number: H10N30/085 ,  H10N30/072 ,  H10N30/853 ,  H10N30/8542 ,  H10N30/8554 ,  H01L2221/68363 ,  H10N30/04 ,  Y10T29/42

Abstract: A method for transferring a piezoelectric layer from a donor substrate onto a support substrate comprises the steps of: a) providing a predetermined splitting area in a piezoelectric donor substrate, b) attaching the piezoelectric donor substrate to a support substrate to form an assembly, and c) detaching the piezoelectric layer from the piezoelectric donor substrate comprising applying an electric field. By using the electric field, the detachment step can be carried out at low temperatures. A detachment chamber for carrying out at least a portion of such a method includes one or two chucks comprising first and/or second electrodes for applying an electric field to a piezoelectric layer.

公开(公告)号：US11742233B2

公开(公告)日：2023-08-29

申请号：US17135340

申请日：2020-12-28

Applicant: Soitec

Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

CPC classification number: H01L21/6835 ,  H01L21/4803 ,  H01L21/76251 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68381

Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

公开(公告)号：US20230260841A1

公开(公告)日：2023-08-17

申请号：US17756615

申请日：2020-10-26

Applicant: Soitec

Inventor： Ionut Radu ,  Hugo Biard ,  Christophe Maleville ,  Eric Guiot ,  Didier Landru

IPC: H01L21/78 ,  H01L21/02 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/32

CPC classification number: H01L21/7813 ,  H01L21/02079 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02628 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/325

Abstract: A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

公开(公告)号：US20230230874A1

公开(公告)日：2023-07-20

申请号：US18007145

申请日：2021-06-23

Applicant: Soitec

Inventor： Bruno Clemenceau ,  Ludovic Ecarnot ,  Aymen Ghorbel ,  Marcel Broekaart ,  Daniel Delprat ,  Séverin Rouchier ,  Stephane Thieffry ,  Carine Duret

IPC: H01L21/762 ,  H01L21/683 ,  H01L21/02

CPC classification number: H01L21/76254 ,  H01L21/6835 ,  H01L21/02274

Abstract: A method for transferring a thin layer onto a carrier substrate comprises preparing a carrier substrate using a preparation method involving supplying a base substrate having, on a main face, a charge-trapping layer and forming a dielectric layer having a thickness greater than 200 nm on the charge-trapping layer. Once the dielectric layer is formed, the ionized deposition and sputtering of the dielectric layer are simultaneously performed. The transfer method also comprises assembling, by way of molecular adhesion and with an unpolished free face of the dielectric layer, a donor substrate to the dielectric layer of the carrier substrate, the donor substrate having an embrittlement plane defining the thin layer. Finally, the method comprises splitting the donor substrate at the embrittlement plane to release the thin layer and to transfer it onto the carrier substrate.

公开(公告)号：US11706989B2

公开(公告)日：2023-07-18

申请号：US16963924

申请日：2019-01-18

Applicant: Soitec

Inventor： Bruno Ghyselen

IPC: B06B1/02 ,  H01L41/09 ,  H01L41/22

CPC classification number: H01L41/0973 ,  H01L41/22 ,  B06B1/0292

Abstract: A design process is used for designing a device comprising a plurality of micro-machined elements, each comprising a flexible membrane, the elements being arranged in a plane in a determined topology. The design process comprises a step of defining the determined topology so that it has a character compatible with a generic substrate having cavities, the characteristics of which are pre-established. Each flexible membrane of the micro-machined elements is associated with one cavity of the generic substrate. The present disclosure also relates to a fabrication process for fabricating a device comprising a plurality of micro-machined elements, and to this device itself, wherein only some of the pairs of cavities and flexible membranes are configured to form a set of functional micro-machined elements.

公开(公告)号：US20230160102A1

公开(公告)日：2023-05-25

申请号：US17907509

申请日：2021-01-12

Applicant: Soitec

Inventor： Hugo Biard ,  Ionut Radu ,  Didier Landru

IPC: C30B25/20 ,  H01L21/02 ,  C30B25/18 ,  C30B31/22 ,  C23C16/01 ,  C23C16/32 ,  C23C16/56 ,  C23C14/48 ,  C23C14/58

CPC classification number: C30B25/20 ,  C23C14/48 ,  C23C14/588 ,  C23C16/01 ,  C23C16/56 ,  C23C16/325 ,  C30B25/183 ,  C30B31/22 ,  H01L21/02002

Abstract: A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline SiC, the donor substrate comprising a donor layer produced by epitaxial growth on an initial substrate, the donor layer exhibiting a density of crystal defects that is lower than that of the initial substrate; b) a step of ion implantation of light species into the donor layer, in order to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free face of the donor layer; c) a succession of n steps of formation of carrier layers, with n greater than or equal to 2, the n carrier layers being arranged on the donor layer successively on one another and forming the carrier substrate, each step of formation comprising a chemical vapor deposition, at a temperature of between 400° C. and 1100° C., in order to form a carrier layer made of polycrystalline SiC, the n chemical vapor depositions being carried out at n different temperatures; d) a step of separation along the buried brittle plane, in order to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the remainder of the donor substrate; and e) a step of mechanical and/or chemical treatment(s) of the composite structure.

公开(公告)号：US11652464B2

公开(公告)日：2023-05-16

申请号：US15769684

申请日：2016-10-17

Applicant: Soitec

Inventor： Pascal Guenard ,  Ionut Radu

IPC: H03H9/02 ,  H03H3/10 ,  H03H9/145 ,  H01L41/053 ,  H01L41/047 ,  H01L41/337 ,  H01L41/23 ,  H03H9/64 ,  H03H9/72

CPC classification number: H03H9/02834 ,  H01L41/0475 ,  H01L41/0533 ,  H01L41/23 ,  H01L41/337 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02984 ,  H03H9/145 ,  H03H9/64 ,  H03H9/725

Abstract: A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.

公开(公告)号：US11600766B2

公开(公告)日：2023-03-07

申请号：US16064420

申请日：2016-12-21

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Ionut Radu ,  Jean-Marc Bethoux

IPC: H01L41/312 ,  H01L41/319 ,  H03H3/02 ,  H01L41/187 ,  C30B25/18 ,  C30B29/22 ,  H01L41/08 ,  H01L41/09 ,  H01L41/335 ,  H03H3/08 ,  H03H9/25 ,  H03H9/54 ,  H03H9/64 ,  H01L41/316 ,  C30B29/30

Abstract: A method for manufacturing a monocrystalline piezoelectric material layer includes providing a donor substrate made of the piezoelectric material, providing a receiving substrate, transferring a so-called “seed layer” of the donor substrate onto the receiving substrate, and using epitaxy of the piezoelectric material on the seed layer until the desired thickness for the monocrystalline piezoelectric layer is obtained.