公开(公告)号：US20090206318A1

公开(公告)日：2009-08-20

申请号：US12379277

申请日：2009-02-18

申请人： Han-Bong Ko ,  Yong-Ho Ha ,  Doo-Hwan Park ,  Bong-Jin Kuh ,  Hee-Ju Shin

发明人： Han-Bong Ko ,  Yong-Ho Ha ,  Doo-Hwan Park ,  Bong-Jin Kuh ,  Hee-Ju Shin

IPC分类号： H01L47/00 ,  H01L45/00

CPC分类号： H01L45/143 ,  G11C13/0004 ,  G11C2213/51 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1675

摘要： A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material pattern and an upper electrode on the adhesion pattern, wherein the adhesion pattern includes a conductor including nitrogen.

摘要翻译： 一种非易失性存储器件，包括半导体衬底上的下电极，下电极上的相变材料图案，相变材料图案上的粘合图案和粘附图案上的上电极，其中粘附图案包括：导体，包括 氮。

公开(公告)号：US20090057644A1

公开(公告)日：2009-03-05

申请号：US12229500

申请日：2008-08-22

申请人： Hee-Ju Shin ,  Yong-Ho Ha ,  Jeong-Hee Park ,  Myung-Jin Kang ,  Doo-Hwan Park

发明人： Hee-Ju Shin ,  Yong-Ho Ha ,  Jeong-Hee Park ,  Myung-Jin Kang ,  Doo-Hwan Park

IPC分类号： H01L45/00

CPC分类号： H01L45/1625 ,  G11C13/0004 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675

摘要： A phase-change memory unit includes a lower electrode on a substrate, a phase-change material layer pattern including germanium-antimony-tellurium (GST) and carbon on the lower electrode, a transition metal layer pattern on the phase-change material layer pattern, and an upper electrode on the first transition metal layer pattern. The phase-change memory unit may have good electrical characteristics.

摘要翻译： 相变存储单元包括基板上的下电极，包含锗 - 锑 - 碲（GST）的相变材料层图案和下电极上的碳，相变材料层图案上的过渡金属层图案 和第一过渡金属层图案上的上电极。 相变存储器单元可具有良好的电特性。

公开(公告)号：US07462900B2

公开(公告)日：2008-12-09

申请号：US12039156

申请日：2008-02-28

申请人： Horii Hideki ,  Bong-Jin Kuh ,  Yong-Ho Ha ,  Jeong-hee Park ,  Ji-Hye Yi

发明人： Horii Hideki ,  Bong-Jin Kuh ,  Yong-Ho Ha ,  Jeong-hee Park ,  Ji-Hye Yi

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119 ,  H01L27/10 ,  H01L29/73 ,  H01L29/74 ,  H01L27/148 ,  H01L29/768 ,  H01L29/00 ,  H01L23/48 ,  H01L23/52

CPC分类号： G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675 ,  H01L2924/0002 ,  Y10S257/904 ,  H01L2924/00

摘要： Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystal line structure.

摘要翻译： 提供了可相变存储器件和制造可相变存储器件的方法，其包括可包括氮原子和/或硅原子的相变材料的相变材料图案。 第一和第二电极电连接到相变材料图案并向其提供电信号。 相变材料图案可以具有多晶结构。

公开(公告)号：US07402851B2

公开(公告)日：2008-07-22

申请号：US10910945

申请日：2004-08-04

申请人： Horii Hideki ,  Bong-Jin Kuh ,  Yong-Ho Ha ,  Jeong-hee Park ,  Ji-Hye Yi

发明人： Horii Hideki ,  Bong-Jin Kuh ,  Yong-Ho Ha ,  Jeong-hee Park ,  Ji-Hye Yi

IPC分类号： H01L27/148 ,  H01L29/768 ,  H01L29/02 ,  H01L29/04 ,  H01L47/00

CPC分类号： H01L45/143 ,  G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

摘要： Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystalline structure.

摘要翻译： 提供了可相变存储器件和制造可相变存储器件的方法，其包括可包括氮原子和/或硅原子的相变材料的相变材料图案。 第一和第二电极电连接到相变材料图案并向其提供电信号。 相变材料图案可以具有多晶结构。

公开(公告)号：US20080169457A1

公开(公告)日：2008-07-17

申请号：US12039156

申请日：2008-02-28

申请人： Horii Hideki ,  Bong-Jin Kuh ,  Yong-Ho Ha ,  Jeong-hee Park ,  Ji-Hye Yi

发明人： Horii Hideki ,  Bong-Jin Kuh ,  Yong-Ho Ha ,  Jeong-hee Park ,  Ji-Hye Yi

IPC分类号： H01L45/00

CPC分类号： G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675 ,  H01L2924/0002 ,  Y10S257/904 ,  H01L2924/00

摘要： Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystal line structure.

摘要翻译： 提供了可相变存储器件和制造可相变存储器件的方法，其包括可包括氮原子和/或硅原子的相变材料的相变材料图案。 第一和第二电极电连接到相变材料图案并向其提供电信号。 相变材料图案可以具有多晶结构。

公开(公告)号：US20080075843A1

公开(公告)日：2008-03-27

申请号：US11860829

申请日：2007-09-25

申请人： Bong-Jin Kuh ,  Yong-Ho Ha ,  Doo-Hwan Park ,  Han-Bong Ko ,  Sang-Wook Lim ,  Hee-Ju Shin

发明人： Bong-Jin Kuh ,  Yong-Ho Ha ,  Doo-Hwan Park ,  Han-Bong Ko ,  Sang-Wook Lim ,  Hee-Ju Shin

IPC分类号： B05D5/12

CPC分类号： G11C13/0004 ,  G11C2213/35 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1658 ,  H01L45/1675 ,  H01L45/1683

摘要： In a method of manufacturing a phase-change memory unit, a lower electrode electrically connected to a contact region is formed on a substrate. A preliminary phase-change material layer is formed on the lower electrode using a chalcogenide compound doped with carbon, or carbon and nitrogen. A phase-change material layer is obtained by doping a stabilizing metal into the preliminary phase-change material layer. An upper electrode is formed on the phase-change material layer. Since the phase-change material layer may have improved electrical characteristics, stability of phase transition and thermal stability, the phase-change memory unit may have reduced set resistance, enhanced durability, improved reliability, increased sensing margin, reduced driving current, etc.

摘要翻译： 在制造相变存储单元的方法中，在基板上形成与接触区电连接的下电极。 使用掺杂有碳或碳和氮的硫属化物化合物在下电极上形成初步相变材料层。 通过将稳定金属掺杂到初始相变材料层中来获得相变材料层。 在相变材料层上形成上电极。 由于相变材料层可能具有改善的电特性，相变稳定性和热稳定性，所以相变存储单元可以具有降低的设定电阻，增强的耐久性，改善的可靠性，增加的感测裕度，降低的驱动电流等。

公开(公告)号：US20060267573A1

公开(公告)日：2006-11-30

申请号：US11361412

申请日：2006-02-24

申请人： Hideki Horii ,  Yong-Ho Ha

发明人： Hideki Horii ,  Yong-Ho Ha

IPC分类号： G01R13/38

CPC分类号： G01R31/2601

摘要： Provided are a system and method of determining pulse properties of a semiconductor device. An embodiment of the system includes at least one pair of first and second probes electrically contacting terminals of the semiconductor resistance device, a pulse generator connected to the first probe and outputting pulse signals, an oscilloscope having at least one pair of first and second channels, wherein the pulse electric signal is supplied to the first channel and the first probe and the second channel is connected to the second probe. The oscilloscope calculates a pulse current flowing in terminals of the semiconductor resistance device using the second channel and determines a dynamic resistance of the semiconductor resistance device using the first and second channels.

公开(公告)号：US07082051B2

公开(公告)日：2006-07-25

申请号：US10845065

申请日：2004-05-14

申请人： Yong-ho Ha ,  Beak-hyung Cho ,  Ji-hye Yi

发明人： Yong-ho Ha ,  Beak-hyung Cho ,  Ji-hye Yi

IPC分类号： G11C11/00 ,  H01L29/02 ,  H01L31/0376

CPC分类号： G11C13/0069 ,  G11C7/04 ,  G11C13/0004 ,  G11C2013/0092

摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.

摘要翻译： 在将具有较低电阻状态和较高电阻状态的相变存储单元编程为较低电阻状态的方法中，将存储单元加热至第一温度。 随后，将存储单元加热至大于第一温度的第二温度。

公开(公告)号：US20200077056A1

公开(公告)日：2020-03-05

申请号：US16674151

申请日：2019-11-05

申请人： Yong Ho Ha ,  Hyun Ju Ha

发明人： Yong Ho Ha ,  Hyun Ju Ha

IPC分类号： H04N9/31 ,  A43B3/00 ,  G09F19/18

摘要： Shoe capable of projecting images that can be changed, wherein the shoe can not only change images projected in front thereof, so as to attract a wearer's interest, but can also naturally induce his or her walking. The subject matter of the present invention is a shoe capable of projecting images that can be changed, the shoe including a shoe body and an image projector detachably attached to the shoe body so as to project an image onto the ground, wherein the image projector comprises: a light source for emitting light; an image cell installed in front of the light source so as to form an image to be projected; and an image changing means for transmitting a control signal to the image cell so as to change the image to be projected.

公开(公告)号：US20150270177A1

公开(公告)日：2015-09-24

申请号：US14592842

申请日：2015-01-08

申请人： Wei-Hsiung TSENG ,  Ju-Youn KIM ,  Seok-Jun WON ,  Jong-Ho LEE ,  Hye-Lan LEE ,  Yong-Ho HA

发明人： Wei-Hsiung TSENG ,  Ju-Youn KIM ,  Seok-Jun WON ,  Jong-Ho LEE ,  Hye-Lan LEE ,  Yong-Ho HA

IPC分类号： H01L21/8238 ,  H01L29/40 ,  H01L21/324 ,  H01L21/28 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L27/0924 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823864 ,  H01L21/845 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/435 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6681 ,  H01L29/7848

摘要： Provided is a method for fabricating a semiconductor device. The method includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench; forming a high-k dielectric layer in the first trench; successively forming a diffusion layer and a blocking layer on the high-k dielectric layer; subsequently performing annealing; after the annealing, successively removing the blocking layer and the diffusion layer; forming a first barrier layer on the high-k dielectric layer; successively forming a work function adjustment layer and a gate conductor on the first barrier layer; and forming a capping layer on the gate conductor.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在衬底上形成层间绝缘层，所述层间绝缘层包括第一沟槽; 在第一沟槽中形成高k电介质层; 在高k电介质层上依次形成扩散层和阻挡层; 随后进行退火; 退火后，依次去除阻挡层和扩散层; 在高k电介质层上形成第一阻挡层; 在第一阻挡层上依次形成功函数调整层和栅极导体; 并在栅极导体上形成覆盖层。