公开(公告)号：US20170117180A1

公开(公告)日：2017-04-27

申请号：US15335721

申请日：2016-10-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Siew Kit HOI ,  Arvind SUNDARRAJAN ,  Jiao SONG

IPC: H01L21/768 ,  C23C14/16 ,  H01J37/32 ,  C23C14/34 ,  H01L21/285 ,  H01L21/67

CPC classification number: H01L21/76865 ,  C23C14/046 ,  C23C14/165 ,  C23C14/34 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32339 ,  H01J37/3244 ,  H01L21/2855 ,  H01L21/67069 ,  H01L21/76862 ,  H01L21/76871 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329

Abstract: Methods for forming layers on a substrate having a feature are provided herein. In some embodiments, a method for forming layers on a substrate having a features may include depositing a copper layer within the feature, wherein a thickness of the copper layer disposed on upper corners of an opening of the feature and on an upper portion of a sidewall proximate the upper corners of the feature is greater than the thickness of the copper layer disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature; and exposing the substrate to a plasma formed from a process gas comprising hydrogen (H2) gas to selectively etch the copper layer proximate the upper corners of the opening and the upper portion of the sidewall proximate the upper corners, without substantially etching the copper layer proximate the lower portion of the sidewall proximate the bottom of the feature.

公开(公告)号：US20150235844A1

公开(公告)日：2015-08-20

申请号：US14609129

申请日：2015-01-29

Applicant: Applied Materials, Inc.

Inventor： Zongbin WANG ,  Shalina Deepa SUDHEERAN ,  Arvind SUNDARRAJAN ,  Bharat BHUSHAN

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/768

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4554 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32577 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/0228 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76898

Abstract: Implementations described herein generally relate to methods for forming dielectric films in high aspect ratio features. In one implementation, a method for forming a silicon oxide layer is provided. A silicon-containing precursor gas is flown into a processing chamber having a substrate having a high aspect ratio feature disposed therein. Then a high frequency plasma is applied to the silicon-containing precursor gas to deposit a silicon-containing layer over the surface of the high aspect ratio feature. The processing chamber is purged to remove by-products from the silicon-containing layer deposition process. An oxygen-containing precursor gas is flown into the processing chamber. A high frequency plasma and a low frequency plasma are applied to the oxygen-containing precursor gas to form the silicon oxide layer.

Abstract translation: 本文描述的实施方案通常涉及用于形成高纵横比特征的介电膜的方法。 在一个实施方案中，提供了形成氧化硅层的方法。 将含硅前体气体流入具有设置在其中的具有高纵横比特征的基板的处理室。 然后将高频等离子体施加到含硅前体气体上以在高纵横比特征的表面上沉积含硅层。 净化处理室以除去含硅层沉积工艺中的副产物。 含氧前体气体流入处理室。 将高频等离子体和低频等离子体施加到含氧前体气体上以形成氧化硅层。

公开(公告)号：US20140305802A1

公开(公告)日：2014-10-16

申请号：US14205260

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Peijun DING ,  Rong TAO ,  Zheng XU ,  Daniel C. LUBBEN ,  Suraj RENGARAJAN ,  Michael A. MILLER ,  Arvind SUNDARRAJAN ,  Xianmin TANG ,  John C. FORSTER ,  Jianming FU ,  Roderick C. MOSELY ,  Fusen CHEN ,  Praburam GOPALRAJA

IPC: C23C14/04 ,  C23C14/35

CPC classification number: C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

Abstract translation: 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。

公开(公告)号：US20140295665A1

公开(公告)日：2014-10-02

申请号：US14303292

申请日：2014-06-12

Applicant: Applied Materials, Inc.

Inventor： Bo ZHENG ,  Arvind SUNDARRAJAN ,  Xinyu FU

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/02063 ,  H01J37/32082 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/743 ,  H01L21/768

Abstract: Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

Abstract translation: 通过在单个处理室中在衬底上依次执行两个等离子体清洗工艺，从衬底的表面除去天然氧化物和相关残留物。 第一等离子体清洁工艺通过从氨（NH 3）和三氟化氮（NF 3）气体的混合物中产生清洁等离子体，从而将清洁等离子体的产物冷凝在天然氧化物上，从而去除在基底表面上形成的天然氧化物，形成薄膜， 含有六氟硅酸铵（（NH 4）2 SiF 6），并将薄膜从衬底表面上升华。 通过从三氟化氮气体产生第二清洗等离子体，第二等离子体清洗工艺去除剩余的薄膜残留物。 第二清洗等离子体的产物与表面上存在的裸硅几埃反应，形成四氟化硅（SiF4）并提取薄膜的残留物。