公开(公告)号：US20190109025A1

公开(公告)日：2019-04-11

申请号：US16209581

申请日：2018-12-04

Applicant: Applied Materials, Inc.

Inventor： David Benjaminson ,  Dmitry Lubomirsky ,  Ananda Seelavanth Math ,  Saravanakumar Natarajan ,  Shubham Chourey

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687 ,  H01L21/324

Abstract: A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck.

公开(公告)号：US10256079B2

公开(公告)日：2019-04-09

申请号：US13791074

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/3213 ,  C23C16/54 ,  C23C16/455 ,  C23C16/505 ,  H01L21/67

Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

公开(公告)号：US10253406B2

公开(公告)日：2019-04-09

申请号：US15451995

申请日：2017-03-07

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Prerna S. Goradia ,  Geetika Bajaj ,  Yogita Pareek ,  Yixing Lin ,  Dmitry Lubomirsky ,  Ankur Kadam ,  Bipin Thakur ,  Kevin A. Papke ,  Kaushik Vaidya

IPC: C25D3/54 ,  C25D5/18 ,  C25D5/48 ,  C25D11/34 ,  C23C8/12 ,  C22F1/16 ,  C23C8/16 ,  C25D5/50 ,  C25D11/08

Abstract: The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

公开(公告)号：US10233554B2

公开(公告)日：2019-03-19

申请号：US15452062

申请日：2017-03-07

Applicant: Applied Materials, Inc.

Inventor： Yogita Pareek ,  Laksheswar Kalita ,  Geetika Bajaj ,  Kevin A. Papke ,  Ankur Kadam ,  Bipin Thakur ,  Yixing Lin ,  Dmitry Lubomirsky ,  Prerna S. Goradia

IPC: C25D3/44 ,  C25D3/66 ,  C25D5/18 ,  C25D5/48 ,  C25D5/50 ,  C25D11/04 ,  H01L21/67 ,  C25D5/02

Abstract: The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.

公开(公告)号：US10224210B2

公开(公告)日：2019-03-05

申请号：US14565077

申请日：2014-12-09

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system includes a process chamber and a plasma source that generates a plasma in a plasma cavity. The plasma cavity is substantially symmetric about a toroidal axis. The plasma source defines a plurality of outlet apertures on a first axial side of the plasma cavity Plasma products produced by the plasma pass in the axial direction, through the plurality of outlet apertures, from the plasma cavity toward the process chamber. A method of plasma processing includes generating a plasma within a substantially toroidal plasma cavity that defines a toroidal axis, to form plasma products, and distributing the plasma products to a process chamber through a plurality of outlet openings substantially azimuthally distributed about a first axial side of the plasma cavity, directly into a process chamber.

公开(公告)号：US10224180B2

公开(公告)日：2019-03-05

申请号：US15943208

申请日：2018-04-02

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky

IPC: H01J37/30 ,  H01J37/32 ,  H01L21/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/3065

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.

公开(公告)号：US10214815B2

公开(公告)日：2019-02-26

申请号：US14947594

申请日：2015-11-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. Rasheed ,  Dmitry Lubomirsky

IPC: C23C16/455 ,  H01L21/285 ,  H01L21/02 ,  C04B40/00 ,  C04B35/581 ,  H01J37/32 ,  C23C16/44

Abstract: Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.

公开(公告)号：US20180213608A1

公开(公告)日：2018-07-26

申请号：US15411896

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： David Benjaminson ,  Ken Schatz ,  Dmitry Lubomirsky

IPC: H05B3/34 ,  H01L21/67 ,  H01L21/683

CPC classification number: H05B3/34 ,  H01L21/67103 ,  H01L21/6833 ,  H05B2203/013 ,  H05B2203/017

Abstract: A heater assembly for a substrate support assembly includes a flexible body. The heater assembly further includes one or more resistive heating elements disposed in the flexible body. The heater assembly further includes a first metal layer disposed on the top surface of the flexible body and extending at least partially onto an outer sidewall of the flexible body. The heater assembly further includes a second metal layer disposed on a bottom surface of the flexible body and extending at least partially onto the outer sidewall of the flexible body, wherein the second metal layer is coupled to the first metal layer at the outer sidewall of the flexible body such that the first metal layer and the second metal layer enclose, and form a continuous electrically conductive path around, the outer sidewall of the flexible body.

公开(公告)号：US09972477B2

公开(公告)日：2018-05-15

申请号：US14751848

申请日：2015-06-26

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568

Abstract: Implementations of the present disclosure relate to an electrode assembly for a processing chamber. In one implementation, the electrode assembly includes a cathode electrode having an inner volume and a ground anode electrode spaced apart from the cathode electrode. A first etchant gas is introduced through the cathode electrode and into the inner volume. The first etchant gas is ionized within the inner volume. The ionized first etchant gas is filtered to allow only radicals to flow from the inner volume into a mixing volume formed within the ground anode electrode. The mixing volume is separated from the inner volume by a gas injection ring. The radicals from the first etchant gas are mixed and reacted with a second etchant gas in molecular phase, which is introduced through the ground anode electrode into a sidewall of the gas injection ring before entering the mixing volume in an evenly distributed manner.

公开(公告)号：US09966240B2

公开(公告)日：2018-05-08

申请号：US14514222

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01J37/32 ,  G01J3/02 ,  C23C16/50 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01J37/32972 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52 ,  G01J3/0218 ,  G01J3/443 ,  H01J37/32082 ,  H01J37/32532 ,  H01J37/3255

Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.