公开(公告)号：US10170342B2

公开(公告)日：2019-01-01

申请号：US15716142

申请日：2017-09-26

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Shu-Kwan Lau

IPC: H01L21/67 ,  C23C16/44 ,  C23C16/455

Abstract: Embodiments of the present disclosure provide a liner assembly including a plurality of individually separated gas passages. The liner assembly enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present disclosure.

公开(公告)号：US20180337074A1

公开(公告)日：2018-11-22

申请号：US15597949

申请日：2017-05-17

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01L21/67 ,  H01L21/687

Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

公开(公告)号：US10077508B2

公开(公告)日：2018-09-18

申请号：US15415982

申请日：2017-01-26

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC: C30B25/10 ,  C30B25/08 ,  C30B25/16 ,  C30B25/12 ,  C23C16/458 ,  C23C16/48 ,  C23C16/52 ,  G01J5/10 ,  G01J5/00 ,  H01L21/67 ,  H01L21/02

CPC classification number: C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

公开(公告)号：US09279604B2

公开(公告)日：2016-03-08

申请号：US13902310

申请日：2013-05-24

Applicant: APPLIED MATERIALS, INC.

Inventor： David K. Carlson ,  Errol Antonio C. Sanchez ,  Kenric Choi ,  Marcel E. Josephson ,  Dennis Demars ,  Emre Cuvalci ,  Mehmet Tugrul Samir

IPC: F25B21/02 ,  C23C16/448

CPC classification number: F25B21/02 ,  C23C16/448 ,  C23C16/4482

Abstract: Methods and apparatus for thermal management of a precursor for use in substrate processing are provided herein. In some embodiments, an apparatus for thermal management of a precursor for use in substrate processing may include a body having an opening sized to receive a storage container having a liquid or solid precursor disposed therein, the body fabricated from thermally conductive material; one or more thermoelectric devices coupled to the body proximate the opening; a heat sink coupled to the one or more thermoelectric devices; and a fan disposed proximate to a back side of the heat sink to provide a flow of air to the heat sink.

Abstract translation: 本文提供了用于基板处理的前体的热管理方法和装置。 在一些实施例中，用于对基板处理中使用的前体进行热管理的设备可以包括具有开口尺寸的开口的主体，该开口的尺寸适于容纳设置在其中的液体或固体前体的存储容器，所述主体由导热材料制成; 一个或多个耦合到靠近开口的本体的热电装置; 耦合到所述一个或多个热电装置的散热器; 以及靠近所述散热器的后侧设置的风扇，以向所述散热器提供空气流。

公开(公告)号：USD711331S1

公开(公告)日：2014-08-19

申请号：US29472048

申请日：2013-11-07

Applicant: Applied Materials, Inc.

Designer： Shu-Kwan Lau ,  Mehmet Tugrul Samir ,  Anzhong Chang ,  Paul Brillhart ,  Richard O. Collins

公开(公告)号：US11515179B2

公开(公告)日：2022-11-29

申请号：US16915749

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang

IPC: H01L21/311 ,  H01L21/67 ,  C23C16/455 ,  H01J37/32 ,  C23C16/44 ,  B01F25/00 ,  B01F101/58

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US10829855B2

公开(公告)日：2020-11-10

申请号：US15492938

申请日：2017-04-20

Applicant: Applied Materials, Inc.

Inventor： Anh N. Nguyen ,  Dmitry Lubomirsky ,  Mehmet Tugrul Samir

IPC: C23C16/455

Abstract: Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

公开(公告)号：US10781533B2

公开(公告)日：2020-09-22

申请号：US15172391

申请日：2016-06-03

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir

IPC: C30B25/14 ,  C30B25/10 ,  C23C16/46 ,  C23C16/455 ,  C30B25/12

Abstract: Embodiments of the present disclosure provide a processing chamber with a top, a bottom, and a sidewall coupled together to define a volume, a gas distributor disposed around the sidewall, a substrate support disposed in the enclosure, the substrate support having a central exhaust opening having a channel and a rotary actuator disposed along a longitudinal axis thereof, and a plurality of substrate pockets distributed around the central exhaust opening, and an energy source coupled to the bottom.

公开(公告)号：US20190252154A1

公开(公告)日：2019-08-15

申请号：US15942051

申请日：2018-03-30

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01J37/3244 ,  H01J2237/006 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67069

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US20180337057A1

公开(公告)日：2018-11-22

申请号：US15597973

申请日：2017-05-17

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.