公开(公告)号：US09768043B2

公开(公告)日：2017-09-19

申请号：US14132215

申请日：2013-12-18

Applicant: Applied Materials, Inc.

Inventor： Anzhong Chang ,  Paul Brillhart ,  Surajit Kumar ,  Satheesh Kuppurao ,  Mehmet Tugrul Samir ,  David K. Carlson ,  Steve Aboagye ,  Anh N. Nguyen ,  Kailash Kiran Patalay ,  Joseph M. Ranish ,  Oleg Serebryanov ,  Dongming Iu ,  Shu-Kwan Lau ,  Zuoming Zhu ,  Herman Diniz

IPC: A21B2/00 ,  H01L21/67 ,  C23C16/455

CPC classification number: H01L21/67115 ,  C23C16/45504

Abstract: Embodiments of the present disclosure relate to a dome assembly. The dome assembly includes an upper dome including a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8° to about 16° with respect to a planar bottom surface of the lower peripheral flange.

公开(公告)号：US09695508B2

公开(公告)日：2017-07-04

申请号：US14639697

申请日：2015-03-05

Applicant: Applied Materials, Inc.

Inventor： David K. Carlson ,  Mehmet Tugrul Samir ,  Nyi O. Myo

IPC: C23C16/458 ,  C23C16/44 ,  C23F1/00 ,  H01L21/306 ,  C23C16/455 ,  C23C16/06

CPC classification number: C23C16/4404 ,  C23C16/45574 ,  C23C16/45578

Abstract: Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.

公开(公告)号：US09534295B2

公开(公告)日：2017-01-03

申请号：US14304548

申请日：2014-06-13

Applicant: Applied Materials, Inc.

Inventor： David K. Carlson

IPC: F17D1/02 ,  F17C1/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52

CPC classification number: F17C13/00 ,  C23C16/4412 ,  C23C16/45557 ,  C23C16/52 ,  F16L55/027 ,  F17C1/00 ,  F17C2221/014 ,  F17C2221/016 ,  F17D1/02 ,  Y10T137/0396 ,  Y10T137/2931

Abstract: In one embodiment, a pressure control assembly includes a cylindrical hollow body having an opening to receive a ballast gas, a first and second flange, and a first and second cone. The first flange is coupled to a first end of the body, and a second flange is coupled to an opposing end of the body. The first cone is coupled to the first flange, and the second cone is coupled to the second flange. A method for controlling pressure in a chamber includes measuring a pressure of the chamber and a pressure of an exhaust system coupled to the chamber. The method includes dynamically adjusting the pressure in the exhaust system in order to adjust the pressure in the chamber, by creating a first pressure drop that is greater than a second pressure drop in the exhaust system.

Abstract translation: 在一个实施例中，压力控制组件包括具有用于容纳压载气体的开口的圆柱形空心体，第一和第二凸缘以及第一和第二锥体。 第一凸缘联接到主体的第一端，并且第二凸缘联接到主体的相对端。 第一锥体联接到第一凸缘，并且第二锥体联接到第二凸缘。 用于控制腔室中的压力的​​方法包括测量腔室的压力和耦合到腔室的排气系统的压力。 该方法包括动态地调节排气系统中的压力，以通过产生大于排气系统中的第二压降的第一压降来调节室内的压力。

公开(公告)号：US09396909B2

公开(公告)日：2016-07-19

申请号：US14596289

申请日：2015-01-14

Applicant: APPLIED MATERIALS, INC.

Inventor： David K. Carlson

IPC: H01J37/32 ,  C23C16/455 ,  F17D1/04

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45574 ,  F17D1/04 ,  H01J37/32633 ,  Y10T137/6579 ,  Y10T137/85938 ,  Y10T137/87153 ,  Y10T137/87265 ,  Y10T137/87281 ,  Y10T137/87885

Abstract: A gas dispersion apparatus for use with a process chamber, comprising: a quartz body having a top, a ring coupled to a bottom surface of the top and a bottom plate having dispersion holes coupled to the ring opposite the top; a plurality of quartz plates disposed between the top and the bottom plate, wherein the plurality of plates are positioned above one another and spaced apart to form a plenum above each of the plurality of plates and the bottom plate; a plurality of quartz tubes to couple the plenums to the plurality of dispersion holes, each of the plurality of quartz tubes having a first end disposed within one of the plenums and having a second end coupled to one of the dispersion holes; and a plurality of conduits disposed through the top, wherein each of the plurality of conduits is coupled to one of the plenums.

公开(公告)号：US10043870B2

公开(公告)日：2018-08-07

申请号：US14918604

申请日：2015-10-21

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Xinyu Bao ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Keun-Yong Ban

IPC: H01L29/205 ,  H01L27/146 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to a film stack including layers of group III-V semiconductor materials. The film stack includes a phosphorous containing layer deposited over a silicon substrate, a GaAs containing layer deposited on the phosphorous containing layer, and an aluminum containing layer deposited on the GaAs containing layer. The GaAs containing layer between the phosphorous containing layer and the aluminum containing layer improves the surface smoothness of the aluminum containing layer.

公开(公告)号：US09857028B2

公开(公告)日：2018-01-02

申请号：US15393341

申请日：2016-12-29

Applicant: Applied Materials, Inc.

Inventor： David K. Carlson

IPC: F17D1/02 ,  C23C16/44 ,  F17C1/00 ,  F17C13/00 ,  C23C16/455 ,  C23C16/52 ,  F16L55/027

CPC classification number: F17C13/00 ,  C23C16/4412 ,  C23C16/45557 ,  C23C16/52 ,  F16L55/027 ,  F17C1/00 ,  F17C2221/014 ,  F17C2221/016 ,  F17D1/02 ,  Y10T137/0396 ,  Y10T137/2931

Abstract: In one embodiment, a pressure control assembly includes a cylindrical hollow body having an opening to receive a ballast gas, a first and second flange, and a first and second cone. The first flange is coupled to a first end of the body, and a second flange is coupled to an opposing end of the body. The first cone is coupled to the first flange, and the second cone is coupled to the second flange. A method for controlling pressure in a chamber includes measuring a pressure of the chamber and a pressure of an exhaust system coupled to the chamber. The method includes dynamically adjusting the pressure in the exhaust system in order to adjust the pressure in the chamber, by creating a first pressure drop that is greater than a second pressure drop in the exhaust system.

公开(公告)号：US10458040B2

公开(公告)日：2019-10-29

申请号：US15809088

申请日：2017-11-10

Applicant: Applied Materials, Inc.

Inventor： Paul Brillhart ,  Anzhong Chang ,  Edric Tong ,  Kin Pong Lo ,  James Francis Mack ,  Zhiyuan Ye ,  Kartik Shah ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Satheesh Kuppurao ,  Joseph M. Ranish

IPC: C23C16/40 ,  C30B25/14 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

公开(公告)号：US09799737B2

公开(公告)日：2017-10-24

申请号：US15185749

申请日：2016-06-17

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Zhiyuan Ye

IPC: H01L29/205 ,  H01L29/267 ,  H01L21/02

CPC classification number: H01L29/205 ,  H01L21/02381 ,  H01L21/02455 ,  H01L21/02538 ,  H01L21/0262 ,  H01L21/02694 ,  H01L29/267 ,  Y10T117/1008

Abstract: A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions.

公开(公告)号：US09406538B2

公开(公告)日：2016-08-02

申请号：US14034921

申请日：2013-09-24

Applicant: APPLIED MATERIALS, INC.

Inventor： David K. Carlson

IPC: C23C16/458 ,  C23C16/48 ,  C23C16/54 ,  H01L21/673 ,  H01L21/677 ,  H01L21/67

CPC classification number: H01L21/6776 ,  C23C16/4587 ,  C23C16/481 ,  C23C16/54 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/67712

Abstract: In some embodiments, an indexed inline substrate processing tool may include a substrate carrier having a base and pair of opposing substrate supports having respective substrate support surfaces that extend upwardly and outwardly from the base; and a plurality of modules coupled to one another in a linear arrangement, wherein each module of the plurality of modules comprises an enclosure having a first end, a second end, and a lower surface to support the substrate carrier and to provide a path for the substrate carrier to move linearly through the plurality of modules, and wherein at least one module of the plurality of modules comprises: a window disposed in a side of the enclosure; a heating lamp coupled to the side of the enclosure; a gas inlet disposed proximate a top of the enclosure; and an exhaust disposed opposite the gas inlet.

Abstract translation: 在一些实施例中，索引的在线衬底处理工具可以包括具有基部和一对相对的衬底支撑件的衬底载体，其具有从基部向上和向外延伸的相应的衬底支撑表面; 以及多个模块，其以线性布置彼此耦合，其中所述多个模块中的每个模块包括具有第一端，第二端和下表面的外壳，以支撑所述衬底载体并且为 衬底载体线性移动通过所述多个模块，并且其中所述多个模块中的至少一个模块包括：设置在所述外壳侧面的窗口; 耦合到外壳侧面的加热灯; 设置在所述外壳的顶部附近的气体入口; 和与气体入口相对设置的废气。

公开(公告)号：US09279604B2

公开(公告)日：2016-03-08

申请号：US13902310

申请日：2013-05-24

Applicant: APPLIED MATERIALS, INC.

Inventor： David K. Carlson ,  Errol Antonio C. Sanchez ,  Kenric Choi ,  Marcel E. Josephson ,  Dennis Demars ,  Emre Cuvalci ,  Mehmet Tugrul Samir

IPC: F25B21/02 ,  C23C16/448

CPC classification number: F25B21/02 ,  C23C16/448 ,  C23C16/4482

Abstract: Methods and apparatus for thermal management of a precursor for use in substrate processing are provided herein. In some embodiments, an apparatus for thermal management of a precursor for use in substrate processing may include a body having an opening sized to receive a storage container having a liquid or solid precursor disposed therein, the body fabricated from thermally conductive material; one or more thermoelectric devices coupled to the body proximate the opening; a heat sink coupled to the one or more thermoelectric devices; and a fan disposed proximate to a back side of the heat sink to provide a flow of air to the heat sink.

Abstract translation: 本文提供了用于基板处理的前体的热管理方法和装置。 在一些实施例中，用于对基板处理中使用的前体进行热管理的设备可以包括具有开口尺寸的开口的主体，该开口的尺寸适于容纳设置在其中的液体或固体前体的存储容器，所述主体由导热材料制成; 一个或多个耦合到靠近开口的本体的热电装置; 耦合到所述一个或多个热电装置的散热器; 以及靠近所述散热器的后侧设置的风扇，以向所述散热器提供空气流。