公开(公告)号：US20250163607A1

公开(公告)日：2025-05-22

申请号：US18516728

申请日：2023-11-21

Applicant: Applied Materials, Inc.

Inventor： Justin GAU ,  Shekhar ATHANI ,  Rahul KOZHIKKALKANDI ,  Nithin ALEX ,  Adib KHAN ,  Qiwei LIANG ,  Lancelot HUANG ,  Junghoon KIM ,  Hyunjun KIM ,  Douglas A. BUCHBERGER, JR. ,  Vishwas Kumar PANDEY ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Dmitry LUBOMIRSKY

IPC: C30B25/08 ,  C30B25/12 ,  C30B25/14

Abstract: Disclosed herein is a processing chamber for a low temperature epitaxy deposition and components of the same. The processing chamber includes a dome lid coupled with a lid liner via a lid liner separator; a remote plasma source disposed outside the dome lid and operable to energize a process gas; a gas ring disposed under the dome lid and coupled with a gas ring liner via a gas ring liner separator; a showerhead disposed under the gas ring; a susceptor disposed below the showerhead and operable to heat a substrate by conduction; and a side wall disposed under the gas ring and coupled with a wall liner via a wall liner separator. The cleaning method of the processing chamber is also disclosed.

公开(公告)号：US20250022745A1

公开(公告)日：2025-01-16

申请号：US18899055

申请日：2024-09-27

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Douglas Arthur BUCHBERGER, JR. ,  Gautam PISHARODY ,  Dmitry LUBOMIRSKY ,  Shekhar ATHANI

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/683

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; an RF rotary joint coupled to the pedestal and having a RF connector; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal; an insulator tube disposed about the RF conduit; and a ground tube disposed about the insulator tube and extending from the RF rotary joint to the pedestal, wherein the insulator tube extends vertically above an upper surface of the ground tube.

公开(公告)号：US20220319896A1

公开(公告)日：2022-10-06

申请号：US17221215

申请日：2021-04-02

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Douglas Arthur BUCHBERGER, Jr. ,  Gautam PISHARODY ,  Dmitry LUBOMIRSKY ,  Shekhar ATHANI

IPC: H01L21/683 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.

公开(公告)号：US20220004104A1

公开(公告)日：2022-01-06

申请号：US17468536

申请日：2021-09-07

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Douglas A. BUCHBERGER, JR. ,  Qiwei LIANG ,  Ludovic GODET ,  Srinivas D. NEMANI ,  Daniel J. WOODRUFF ,  Randy HARRIS ,  Robert B. MOORE

IPC: G03F7/20 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38 ,  H01L21/67 ,  G03F7/40 ,  H01L21/687

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US20210225687A1

公开(公告)日：2021-07-22

申请号：US16744478

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Sultan MALIK ,  Srinivas D. NEMANI ,  Adib M. KHAN ,  Qiwei LIANG

IPC: H01L21/687 ,  H01L21/677

Abstract: The present disclosure generally relates to a pin-less substrate transfer apparatus and method for a processing chamber. The processing chamber includes a pedestal. The pedestal includes a pedestal plate. The pedestal plate has a radius, a top surface, and a bottom surface. The pedestal plate further includes a plurality of cut outs on a perimeter of the pedestal plate. Flat edges are disposed on opposite sides of the pedestal plate. Recesses are disposed in the bottom surface below each of the flat edges.

公开(公告)号：US20200368666A1

公开(公告)日：2020-11-26

申请号：US16897045

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas NEMANI ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: B01D53/04 ,  H01L21/67 ,  H01L21/673

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US20200035513A1

公开(公告)日：2020-01-30

申请号：US16510848

申请日：2019-07-12

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas D. NEMANI

IPC: H01L21/67 ,  F01K1/00

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A steam delivery module is in fluid communication with the high pressure process chamber and is configured to deliver steam to the process chamber. The steam delivery module includes a boiler and a steam reservoir.

公开(公告)号：US20170088949A1

公开(公告)日：2017-03-30

申请号：US14957440

申请日：2015-12-02

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Qiwei LIANG ,  Tobin KAUFMAN-OSBORN ,  Ludovic GODET ,  Srinivas D. NEMANI

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/458 ,  H01L21/687 ,  C23C16/46

CPC classification number: C23C16/4485 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45517 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67742 ,  H01L21/67754 ,  H01L21/68707 ,  H01L21/68764 ,  H01L21/68771

Abstract: The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.

公开(公告)号：US20150047786A1

公开(公告)日：2015-02-19

申请号：US14456146

申请日：2014-08-11

Applicant: Applied Materials, Inc.

Inventor： Dmitry LUBOMIRSKY ,  Qiwei LIANG

IPC: H01J37/32

CPC classification number: H01J37/32816 ,  H01J37/32513 ,  Y10T428/24479

Abstract: In one embodiment, a surface having a sealing groove formed therein. The sealing groove is configured to accept an elastomeric seal. The sealing groove includes a first portion having a full dovetail profile and at least on a second portion having a half dovetail profile.

Abstract translation: 在一个实施例中，其中形成有密封槽的表面。 密封槽构造成接受弹性体密封。 密封槽包括具有完整的燕尾形轮廓的第一部分，并且至少在具有半个燕尾形轮廓的第二部分上。

公开(公告)号：US20140083362A1

公开(公告)日：2014-03-27

申请号：US14088008

申请日：2013-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Dmitry LUBOMIRSKY ,  Qiwei LIANG ,  Soonam PARK ,  Kien N. CHUC ,  Ellie YIEH

IPC: C23C16/509

CPC classification number: C23C16/45502 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32752 ,  H01J2237/2001 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76224

Abstract: A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

Abstract translation: 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。 顶部入口可以位于衬底台的上方，并且侧入口可以在衬底台周围径向分布。 反应性自由基前体可以通过顶部入口提供给沉积室。 还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。