公开(公告)号：US20180330923A1

公开(公告)日：2018-11-15

申请号：US15965794

申请日：2018-04-27

Applicant: Applied Materials, Inc.

Inventor： Toan Tran ,  Laksheswar Kalita ,  Tae Won Kim ,  Dmitry Lubomirsky ,  Xiaowei Wu ,  Xiao-Ming He ,  Cheng-Hsuan Chou ,  Jennifer Y. Sun

IPC: H01J37/32 ,  C23C16/40

Abstract: A method of applying a multi-layer plasma resistant coating on an article comprises performing plating or ALD to form a conformal first plasma resistant layer on an article, wherein the conformal first plasma resistant layer is formed on a surface of the article and on walls of high aspect ratio features in the article. The conformal first plasma resistant coating has a porosity of approximately 0% and a thickness of approximately 200 nm to approximately 1 micron. One of electron beam ion assisted deposition (EB-IAD), plasma enhanced chemical vapor deposition (PECVD), aerosol deposition or plasma spraying is then performed to form a second plasma resistant layer that covers the conformal first plasma resistant layer at a region of the surface but not at the walls of the high aspect ratio features.

公开(公告)号：US20170125219A1

公开(公告)日：2017-05-04

申请号：US15180425

申请日：2016-06-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/32293 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32229 ,  H01J37/32935 ,  H01J2237/334

Abstract: A rotating microwave is established for any resonant mode TEmnl or TMmnl of a cavity, where the user is free to choose the values of the mode indices m, n and 1. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ΔØ and the azimuthal angle Δθ between two microwave input ports P and Q as functions of m, n and 1. The slow rotation of frequency Ωα (typically 1-1000 Hz), is established by transforming dual field inputs α cos Ωαt and ±α sin Ωαt in the orthogonal input system into an oblique system defined by the angle Δθ between two microwave ports P and Q.

公开(公告)号：US20160005572A1

公开(公告)日：2016-01-07

申请号：US14853838

申请日：2015-09-14

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dimitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract translation: 描述了气体分配组件，其包括环形体，上板和下板。 上板可以限定第一多个孔，并且下板可以限定第二和第三多个孔。 上板和下板可以彼此耦合并且环形体使得第一和第二孔产生通过气体分配组件的通道，并且在上板和下板之间限定一个体积。

公开(公告)号：US09018108B2

公开(公告)日：2015-04-28

申请号：US13834333

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： Sukwon Hong ,  Toan Tran ,  Abhijit Mallick ,  Jingmei Liang ,  Nitin K. Ingle

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/56 ,  C23C16/452 ,  C23C16/34

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234

Abstract: Methods of forming a dielectric layer on a substrate are described, and may include introducing a first precursor into a remote plasma region fluidly coupled with a substrate processing region of a substrate processing chamber A plasma may be formed in the remote plasma region to produce plasma effluents. The plasma effluents may be directed into the substrate processing region. A silicon-containing precursor may be introduced into the substrate processing region, and the silicon-containing precursor may include at least one silicon-silicon bond. The plasma effluents and silicon-containing precursor may be reacted in the processing region to form a silicon-based dielectric layer that is initially flowable when formed on the substrate.

Abstract translation: 描述了在基板上形成电介质层的方法，并且可以包括将第一前体引入到与衬底处理室的衬底处理区域流体耦合的远程等离子体区域中。等离子体可以形成在远程等离子体区域中以产生等离子体流出物 。 等离子体流出物可以被引导到基板处理区域中。 可以将含硅前体引入衬底处理区域，并且含硅前体可以包括至少一个硅 - 硅键。 等离子体流出物和含硅前体可以在处理区域中反应以形成当在基底上形成时最初可流动的硅基电介质层。

公开(公告)号：US20140097270A1

公开(公告)日：2014-04-10

申请号：US13799840

申请日：2013-03-13

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: B05B1/00

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract translation: 描述了气体分配组件，其包括环形体，上板和下板。 上板可以限定第一多个孔，并且下板可以限定第二和第三多个孔。 上板和下板可以彼此耦合并且环形体使得第一和第二孔产生通过气体分配组件的通道，并且在上板和下板之间限定一个体积。