公开(公告)号：US20050221021A1

公开(公告)日：2005-10-06

申请号：US10813115

申请日：2004-03-31

Applicant: Eric Strang

Inventor： Eric Strang

IPC: C23C16/509 ,  H01J37/32 ,  H05H1/24

CPC classification number: C23C16/45542 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32935

Abstract: A plasma processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first gas and a second gas to the process chamber. The system includes a controller that controls the gas injection system to continuously flow a first gas flow to the process chamber and to pulse a second gas flow to the process chamber at a first time. The controller pulses a RF power to the substrate holder at a second time. A method of operating a plasma processing system is provided that includes adjusting a background pressure in a process chamber, where the background pressure is established by flowing a first gas flow using a gas injection system, and igniting a processing plasma in the process chamber. The method includes pulsing a second gas flow using the gas injection system at a first time, and pulsing a RF power to a substrate holder at a second time.

Abstract translation: 一种用于执行原子层沉积（ALD）的等离子体处理系统，包括处理室，设置在处理室内的衬底保持器，以及被配置为向处理室提供第一气体和第二气体的气体注入系统。 该系统包括控制器，其控制气体注入系统以将第一气流连续地流动到处理室，并且在第一时间将第二气流脉冲到处理室。 控制器在第二时间将RF功率脉冲到衬底保持器。 提供了一种操作等离子体处理系统的方法，其包括调整处理室中的背景压力，其中通过使用气体注入系统流动第一气流并且点燃处理室中的处理等离子体来建立背景压力。 该方法包括在第一时间使用气体注入系统脉动第二气流，并且在第二时间将RF功率脉冲到衬底保持器。

公开(公告)号：US20050099133A1

公开(公告)日：2005-05-12

申请号：US10472553

申请日：2002-03-25

Applicant: Bill Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric Strang

Inventor： Bill Quon ,  Jovan Jevtic ,  Sam Antley ,  Eric Strang

IPC: H05H1/46 ,  B01D53/70 ,  B01J19/08 ,  H01J7/24 ,  H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32357 ,  H01J37/3266

Abstract: A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.

Abstract translation: 公开了一种高密度等离子体源（100）。 源包括环形绝缘体（300），其内部形成有环形空腔（316）。 用作天线的电感线圈（340）布置在环形空腔内，并且可操作以在等离子体管道（60）内部区域（72）内产生第一磁场，并且当环形体布置成 围绕等离子体管道的一部分。 接地导电壳体（400）围绕环形绝缘体。 静电屏蔽（360）被布置成邻近绝缘体的内表面并且被接地到导电壳体。 上，下磁环（422和424）优选地布置成邻近导电外壳外的环形绝缘体的上表面和下表面。 T匹配网络与所述电感器线圈电连通，并且适于提供从RF功率源到等离子体的RF功率的有效传输。 可以使用至少一个等离子体源来形成适于等离子体处理高密度等离子体处理的工件，该工件位于与至少一个源连通的等离子体室中。

公开(公告)号：US20050046427A1

公开(公告)日：2005-03-03

申请号：US10495774

申请日：2003-01-31

Applicant: Eric Strang

Inventor： Eric Strang

IPC: G01R27/04 ,  G03G15/00 ,  H01J37/32 ,  H01P7/06

CPC classification number: H01J37/32935 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299

Abstract: An equipment status monitoring system (10) and method of operating includes first (40) and second (50) microwave mirrors in a plasma processing chamber (20) each forming a multi-modal resonator. A power source (60) is coupled to the first mirror (40) and configured to produce an excitation signal. A detector (70) is coupled to at least one of the first mirror (40) and the second mirror (50) and configured to measure an excitation signal. At least one of the power source (60) and the detector (70) is coupled to a divergent aperture (44).

Abstract translation: 设备状态监测系统（10）和操作方法包括等离子体处理室（20）中的每个形成多模共振器的第一（40）和第二（50）微波反射镜。 电源（60）耦合到第一反射镜（40）并且被配置为产生激励信号。 检测器（70）耦合到第一反射镜（40）和第二反射镜（50）中的至少一个并被配置成测量激励信号。 电源（60）和检测器（70）中的至少一个耦合到发散孔（44）。

公开(公告)号：US20050030003A1

公开(公告)日：2005-02-10

申请号：US10495864

申请日：2003-01-30

Applicant: Eric Strang

Inventor： Eric Strang

IPC: G01R17/10 ,  G05B20060101 ,  G06F17/00 ,  H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32275 ,  H01J37/32192 ,  H01J37/3299 ,  H01L21/67069 ,  H01L21/67253

Abstract: An equipment status monitoring system and method of operating thereof is described. The equipment status monitoring system includes at least one microwave mirror in a plasma processing chamber forming a multi-modal resonator. A power source is coupled to a mirror and configured to produce an excitation signal extending along an axis generally perpendicular to a substrate. A detector is coupled to a mirror and configured to measure an excitation signal. A control system is connected to the detector that compares a measured excitation signal to a normal excitation signal in order to determine a status of the material processing equipment.

Abstract translation: 描述了设备状态监视系统及其操作方法。 设备状态监测系统包括形成多模谐振器的等离子体处理室中的至少一个微波反射镜。 电源耦合到反射镜并且被配置为产生沿着大致垂直于衬底的轴延伸的激励信号。 检测器耦合到反射镜并且被配置为测量激励信号。 控制系统连接到检测器，其将测量的激励信号与正常激励信号进行比较，以便确定材料处理设备的状态。

公开(公告)号：US07540305B2

公开(公告)日：2009-06-02

申请号：US11201109

申请日：2005-08-11

Applicant: Eric Strang

Inventor： Eric Strang

IPC: B01F5/06

CPC classification number: C23C16/45512 ,  B01F3/02 ,  B01F5/0256 ,  B01J4/001 ,  B01J19/26 ,  C23C16/455 ,  C23G5/00 ,  Y10T137/87652

Abstract: A chemical processing system includes a mixing chamber coupled to the chemical processing system. A stream of first process gas and a stream of second process gas are introduced into the mixing chamber. The stream of first process gas and the stream of second process gas interact with each other to form a mixed process gas, which is supplied to the substrate for processing thereof. A method of mixing process gas in a mixing chamber of a chemical processing system is provided. The method includes injecting a stream of first process gas and a stream of second process gas into the mixing chamber, causing the streams of the first process gas and the second process gas to interact and mixing the first process gas and the second process gas in the mixing chamber to form a mixed process gas. A mixing system is also provided.

Abstract translation: 化学处理系统包括耦合到化学处理系统的混合室。 将第一工艺气体流和第二工艺气体流引入混合室。 第一工艺气体流和第二工艺气体流彼此相互作用以形成混合工艺气体，其被供应到衬底进行处理。 提供了一种在化学处理系统的混合室中混合处理气体的方法。 该方法包括将第一工艺气体流和第二工艺气体流注入到混合室中，使得第一工艺气体和第二工艺气体的流在第一工艺气体和第二工艺气体之间相互作用并混合 混合室以形成混合工艺气体。 还提供混合系统。

公开(公告)号：US07199327B2

公开(公告)日：2007-04-03

申请号：US10512862

申请日：2003-06-27

Applicant: Paul Moroz ,  Eric Strang

Inventor： Paul Moroz ,  Eric Strang

IPC: B23K10/00

CPC classification number: H01J37/32174 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/0206

Abstract: An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact with a substrate using at least one signal generated from the at least one sensor and controlling a plasma processing system in order to suppress an arcing event. When voltage differences between sensors exceed a target difference, the plasma processing system is determined to be susceptible to arcing. During this condition, an operator is notified, and decision can be made to either continue processing, modify processing, or discontinue processing.

Abstract translation: 一种用于等离子体处理的电弧抑制系统，其包括耦合到所述等离子体处理系统的至少一个传感器，以及耦合到所述至少一个传感器的控制器。 控制器提供至少一种算法，用于使用从至少一个传感器产生的至少一个信号来确定与衬底接触的等离子体的状态，并控制等离子体处理系统以抑制电弧事件。 当传感器之间的电压差超过目标差异时，等离子体处理系统被确定为容易产生电弧。 在这种情况下，通知操作员，并且可以做出继续处理，修改处理或停止处理的决定。

公开(公告)号：US20060090850A1

公开(公告)日：2006-05-04

申请号：US11233077

申请日：2005-09-23

Applicant: Arthur Laflamme ,  Jay Wallace ,  Eric Strang

Inventor： Arthur Laflamme ,  Jay Wallace ,  Eric Strang

IPC: H01L21/306 ,  C23C16/00 ,  G01L21/30

CPC classification number: H01L21/67069 ,  C23C16/45565

Abstract: A chemical processing system includes a processing chamber containing a chemical processing region and a gas injection system. The gas injection system includes at least one first gas injection orifice and at least one second gas injection orifice in communication with the chemical processing region to expose a substrate to mixed first and second process gases. Other embodiments of the chemical processing system can include a sensor to sense a mixing rate of the process gases or a shroud defining a portion of the at least one first gas injection orifice to control mixing of the process gases. A method of mixing process gas in a chemical processing region of a chemical processing system is provided in which a first process gas and a second process gas are injected into the chemical processing region and mixed. A mixture rate is sensed and used to control the mixing.

Abstract translation: 化学处理系统包括含有化学处理区域和气体注入系统的处理室。 气体注入系统包括与化学处理区域连通的至少一个第一气体注入孔口和至少一个第二气体注入孔，以将衬底暴露于混合的第一和第二工艺气体。 化学处理系统的其它实施例可以包括感测处理气体的混合速率的传感器或限定至少一个第一气体喷射孔的一部分的护罩以控制处理气体的混合。 提供了在化学处理系统的化学处理区域中混合处理气体的方法，其中将第一处理气体和第二处理气体注入化学处理区域并混合。 检测混合物速率并用于控制混合。

公开(公告)号：US20050284370A1

公开(公告)日：2005-12-29

申请号：US10875949

申请日：2004-06-25

Applicant: Eric Strang

Inventor： Eric Strang

IPC: C23C16/00 ,  C23C16/40

CPC classification number: C23C16/45536 ,  C23C16/402 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45574

Abstract: A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce the first process gas and the second process gas to the processing chamber at a first location and a second location, wherein at least one of the first process gas and the second process gas is alternatingly and sequentially introduced between the first location and the second location.

Abstract translation: 一种用于执行原子层沉积（ALD）的处理系统，包括处理室，设置在处理室内的衬底保持器，以及被配置为将第一处理气体和第二处理气体供应到处理室的气体注入系统。 气体注入系统被配置为在第一位置和第二位置处将第一处理气体和第二处理气体引入处理室，其中第一处理气体和第二处理气体中的至少一个交替地并且顺序地介于 第一个位置和第二个位置。

公开(公告)号：US20050098106A1

公开(公告)日：2005-05-12

申请号：US10705225

申请日：2003-11-12

Applicant: Steven Fink ,  Eric Strang ,  Michael Landis

Inventor： Steven Fink ,  Eric Strang ,  Michael Landis

IPC: H01J37/32 ,  C23C16/00

CPC classification number: H01J37/32605 ,  H01J37/32009 ,  H01J37/3244

Abstract: An electrode plate, configured to be coupled to an electrode in a plasma processing system, comprises a plurality of gas injection holes configured to receive gas injection devices. The electrode plate comprises three or more mounting holes, wherein the electrode plate is configured to be coupled with an electrode in the plasma processing system by aligning and coupling the three or more mounting holes with three or more mounting screws attached to the electrode.

Abstract translation: 构造成耦合到等离子体处理系统中的电极的电极板包括被配置为接收气体注入装置的多个气体注入孔。 电极板包括三个或更多个安装孔，其中电极板被配置为通过将三个或更多个安装孔与附接到电极的三个或更多个安装螺钉对准并联接在等离子体处理系统中与电极耦合。

公开(公告)号：US20050071037A1

公开(公告)日：2005-03-31

申请号：US10673506

申请日：2003-09-30

Applicant: Eric Strang

Inventor： Eric Strang

IPC: H01L20060101 ,  G06F19/00

CPC classification number: G05B19/41885 ,  G05B2219/32364 ,  G05B2219/32385 ,  G05B2219/45031 ,  Y02P90/26 ,  Y02P90/86

Abstract: A method, system and computer readable medium for analyzing a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a first principles simulation result; and the first principles simulation result is used to determine a fault in the process performed by the semiconductor processing tool.

Abstract translation: 一种用于分析由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 使用输入数据和物理模型进行第一原理模拟，以提供第一原理模拟结果; 并且第一原理模拟结果用于确定由半导体处理工具执行的过程中的故障。