CHEMICAL MECHANICAL POLISHING APPARATUS AND METHODS
    21.
    发明申请
    CHEMICAL MECHANICAL POLISHING APPARATUS AND METHODS 审中-公开
    化学机械抛光装置及方法

    公开(公告)号:US20140199840A1

    公开(公告)日:2014-07-17

    申请号:US14143276

    申请日:2013-12-30

    Abstract: In one aspect, a substrate polishing apparatus is disclosed. The apparatus has a polishing platform having two or more zones, each zone adapted to contain a different slurry component. In another aspect, a substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.

    Abstract translation: 一方面,公开了一种基板研磨装置。 该设备具有具有两个或更多个区域的抛光平台,每个区域适于容纳不同的浆料组分。 在另一方面,提供一种基板抛光系统,其具有用于保持基板的保持器,具有抛光垫的抛光平台和适于以定时顺序分配至少两种不同的浆料组分的分配系统,所述浆料组分选自 的氧化浆料组分,材料去除浆料组分和腐蚀抑制浆料组分。 提供了适于抛光底物的抛光方法和系统,以及许多其它方面。

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