公开(公告)号：US08778210B2

公开(公告)日：2014-07-15

申请号：US12520138

申请日：2007-12-21

申请人： Emanuel I. Cooper ,  Eileen R. Sparks ,  William R. Bowers ,  Mark A. Biscotto ,  Kevin P. Yanders ,  Michael B. Korzenski ,  Prerna Sonthalia ,  Nicole E. Thomas

发明人： Emanuel I. Cooper ,  Eileen R. Sparks ,  William R. Bowers ,  Mark A. Biscotto ,  Kevin P. Yanders ,  Michael B. Korzenski ,  Prerna Sonthalia ,  Nicole E. Thomas

IPC分类号： C03C15/00 ,  C03C25/68 ,  C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C09K13/06

CPC分类号： H01L21/31111 ,  B65D85/70 ,  C09K13/08 ,  G03F7/422 ,  H01L21/0206 ,  H01L2924/0002 ,  H01L2924/00

摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.

摘要翻译： 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。

公开(公告)号：US20100163788A1

公开(公告)日：2010-07-01

申请号：US12520121

申请日：2007-12-21

申请人： Pamela Visintin ,  Ping Jiang ,  Michael B. Korzenski ,  David W. Minsek ,  Emanuel I. Cooper ,  Ming-Ann Hsu ,  Kristin A. Fletcher

发明人： Pamela Visintin ,  Ping Jiang ,  Michael B. Korzenski ,  David W. Minsek ,  Emanuel I. Cooper ,  Ming-Ann Hsu ,  Kristin A. Fletcher

IPC分类号： C09K13/08 ,  C09K13/00

CPC分类号： C11D3/0073 ,  C09K13/00 ,  C09K13/08 ,  C11D1/62 ,  C11D3/042 ,  C11D3/245 ,  C11D3/43 ,  C11D7/08 ,  C11D7/28 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02063

摘要： Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.

摘要翻译： 用于从其上具有所述残余物的微电子器件清洁后等离子体蚀刻残留物的清洁组合物和方法。 该组合物可实现对来自微电子器件的残余物质（包括含钛，含铜，含钨和/或含钴）蚀刻后残留物的高效清洁，同时不损坏层间电介质，金属互连材料， 和/或也存在于其上的封盖层。 此外，该组合物可用于从其上具有其的微电子器件去除氮化钛层。

公开(公告)号：US07368045B2

公开(公告)日：2008-05-06

申请号：US11050790

申请日：2005-01-27

申请人： Philippe M. Vereecken ,  Veeraraghavan S. Basker ,  Cyril Cabral, Jr. ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Martin M. Frank ,  Rajarao Jammy ,  Vamsi Krishna Paruchuri ,  Katherine L. Saenger ,  Xiaoyan Shao

发明人： Philippe M. Vereecken ,  Veeraraghavan S. Basker ,  Cyril Cabral, Jr. ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Martin M. Frank ,  Rajarao Jammy ,  Vamsi Krishna Paruchuri ,  Katherine L. Saenger ,  Xiaoyan Shao

IPC分类号： C25D5/02 ,  C25D11/04

CPC分类号： H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.

摘要翻译： 提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。 该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或 熔化。 还提供了利用电介质电流流动的电介质电化学修饰方法。

公开(公告)号：US07037559B2

公开(公告)日：2006-05-02

申请号：US10426725

申请日：2003-05-01

申请人： Emanuel I. Cooper ,  Charles C. Goldsmith ,  Stephen Kilpatrick ,  Carmen M. Mojica ,  Henry A. Nye, III

发明人： Emanuel I. Cooper ,  Charles C. Goldsmith ,  Stephen Kilpatrick ,  Carmen M. Mojica ,  Henry A. Nye, III

IPC分类号： C25D3/54 ,  C22C12/00 ,  B05D1/18 ,  B05D7/17 ,  B05D7/21

CPC分类号： C23C2/04 ,  C23C2/08 ,  H05K3/3463 ,  H05K3/3473 ,  H05K2203/073 ,  Y10S428/936 ,  Y10T428/12493 ,  Y10T428/12528 ,  Y10T428/12708

摘要： A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.

摘要翻译： 将第一金属通过将基底浸入包含第一金属和有机稀释剂的化合物的浴中而被镀在包含第二金属的基材上。 第二种金属比第一种金属更具有正电性。 在第一和第二金属的相图中，有机稀释剂的沸点高于共晶点。 该浴液在共晶点以上运行，但低于第二种金属的熔点。 例如，将铋浸渍在无铅锡基焊球上，随后通过无助焊回流重新分布。 还提供镀层结构。

公开(公告)号：US06967131B2

公开(公告)日：2005-11-22

申请号：US10694793

申请日：2003-10-29

申请人： Katherine L. Saenger ,  Cyril Cabral, Jr. ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Panayotis Andricacos ,  Philippe M. Vereecken

发明人： Katherine L. Saenger ,  Cyril Cabral, Jr. ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Panayotis Andricacos ,  Philippe M. Vereecken

IPC分类号： H01L21/28 ,  H01L21/288 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8283

CPC分类号： H01L21/28088 ,  H01L29/4966 ,  H01L29/66621 ,  H01L29/7834

摘要： Disclosed is a method for making a metal gate for a FET, wherein the metal gate comprises at least some material deposited by electroplating as well as an FET device comprising a metal gate that is at least partially plated. Further disclosed is a method for making a metal gate for a FET wherein the metal gate comprises at least some plated material and the method comprises the steps of: selecting a substrate having a top surface and a recessed region; conformally depositing a thin conductive seed layer on the substrate; and electroplating a filler gate metal on the seed layer to fill and overfill the recessed region.

公开(公告)号：US5962384A

公开(公告)日：1999-10-05

申请号：US959038

申请日：1997-10-28

申请人： Emanuel I. Cooper ,  Scott A. Estes ,  Glenn W. Gale ,  Rangarajan Jagannathan ,  Harald F. Okorn-Schmidt ,  David L. Rath

发明人： Emanuel I. Cooper ,  Scott A. Estes ,  Glenn W. Gale ,  Rangarajan Jagannathan ,  Harald F. Okorn-Schmidt ,  David L. Rath

IPC分类号： C11D3/39 ,  C11D7/06 ,  C11D7/32 ,  C11D11/00 ,  H01L21/306 ,  C11D9/04 ,  C03C23/00 ,  C11D3/37 ,  C23G1/02

CPC分类号： H01L21/02052 ,  C11D11/0047 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/3245

摘要： A method is provided for treating a plurality of semiconductor substrates using the same aqueous SC-1 solution which solution removes and/or inhibits contamination of the semiconductor surfaces by metallic ions present in the solution or on the substrate surface comprising a basic solution containing hydrogen peroxide and an oxidation-resistant chelating additive such as CDTA in an amount effective to provide the desired treatment results. The SC-1 solution may be the conventional 5:1:1 (water:NH.sub.4 OH:H.sub.2 O.sub.2) solution or a dilute solution such as a 5:x:1 to 200:x:1 solution wherein x is 0.025 to 2.

摘要翻译： 提供了一种使用相同的水溶性SC-1溶液处理多个半导体衬底的方法，该溶液通过存在于溶液中的金属离子或包含含有过氧化氢的碱性溶液的衬底表面去除和/或抑制半导体表面的污染 以及抗氧化性螯合添加剂，如有效提供所需治疗结果的量的CDTA。 SC-1溶液可以是常规的5:1:1（水：NH4OH:H2O2）溶液或稀溶液，例如5:x:1至200:x:1的溶液，其中x为0.025至2。

公开(公告)号：US20140318584A1

公开(公告)日：2014-10-30

申请号：US13978825

申请日：2012-01-12

申请人： Emanuel I. Cooper ,  Jeffrey A. Barnes

发明人： Emanuel I. Cooper ,  Jeffrey A. Barnes

IPC分类号： H01L21/02

CPC分类号： H01L21/02076 ,  H01L21/02057 ,  H01L21/31133

摘要： Compositions and methods for removing lanthanoid-containing solids and/or species from the surface of a microelectronic device or microelectronic device fabrication hardware. Preferably, the lanthanoid-containing solids and/or species comprise cerium. The composition is preferably substantially devoid of fluoride ions.

摘要翻译： 用于从微电子器件或微电子器件制造硬件的表面去除含镧系元素的固体和/或物质的组合物和方法。 优选地，含镧系元素的固体和/或物质包括铈。 组合物优选基本上不含氟离子。

公开(公告)号：US08618036B2

公开(公告)日：2013-12-31

申请号：US13295677

申请日：2011-11-14

申请人： Ali Afzali-Ardakani ,  John A. Fitzsimmons ,  Nicholas C. M. Fuller ,  Mahmoud Khojasteh ,  Jennifer V. Muncy ,  George G. Totir ,  Karl E. Boggs ,  Emanuel I. Cooper ,  Michael W. Owens ,  James L. Simpson

发明人： Ali Afzali-Ardakani ,  John A. Fitzsimmons ,  Nicholas C. M. Fuller ,  Mahmoud Khojasteh ,  Jennifer V. Muncy ,  George G. Totir ,  Karl E. Boggs ,  Emanuel I. Cooper ,  Michael W. Owens ,  James L. Simpson

IPC分类号： H01L21/302 ,  H01L21/311

CPC分类号： H01L21/31133 ,  C09K13/04 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426

摘要： An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.

摘要翻译： 提供具有延长寿命的铈（IV）络合物或盐的水溶液。 在一个实施方案中，通过向铈（IV）络合物或盐的水溶液中加入至少一种助剂添加剂来实现延长的寿命。 在另一个实施方案中，通过提供铈（IV）络合物或盐和铈（III）络合物或盐的水溶液来实现延长的寿命。 可以加入铈（III）络合物或盐，或者可以通过将还原剂引入铈（IV）络合物或盐的水溶液中而原位产生。 水溶液可用于从半导体衬底的表面去除掩模材料，特别是离子注入和图案化的光致抗蚀剂。

公开(公告)号：US20130123159A1

公开(公告)日：2013-05-16

申请号：US13295677

申请日：2011-11-14

申请人： Ali Afzali-Ardakani ,  John A. Fitzsimmons ,  Nicholas C.M. Fuller ,  Mahmoud Khojasteh ,  Jennifer V. Muncy ,  George G. Totir ,  Karl E. Boggs ,  Emanuel I. Cooper ,  Michael W. Owens ,  James L. Simpson

发明人： Ali Afzali-Ardakani ,  John A. Fitzsimmons ,  Nicholas C.M. Fuller ,  Mahmoud Khojasteh ,  Jennifer V. Muncy ,  George G. Totir ,  Karl E. Boggs ,  Emanuel I. Cooper ,  Michael W. Owens ,  James L. Simpson

IPC分类号： G03F7/42

CPC分类号： H01L21/31133 ,  C09K13/04 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426

摘要： An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate.

摘要翻译： 提供具有延长寿命的铈（IV）络合物或盐的水溶液。 在一个实施方案中，通过向铈（IV）络合物或盐的水溶液中加入至少一种助剂添加剂来实现延长的寿命。 在另一个实施方案中，通过提供铈（IV）络合物或盐和铈（III）络合物或盐的水溶液来实现延长的寿命。 可以加入铈（III）络合物或盐，或者可以通过将还原剂引入铈（IV）络合物或盐的水溶液中而原位产生。 水溶液可用于从半导体衬底的表面去除掩模材料，特别是离子注入和图案化的光致抗蚀剂。

公开(公告)号：US20100176082A1

公开(公告)日：2010-07-15

申请号：US12520138

申请日：2007-12-21

申请人： Emanuel I. Cooper ,  Eileen Sparks ,  William R. Bowers ,  Mark A. Biscotto ,  Kevin P. Yanders ,  Michael B. Korzenski ,  Prerna Sonthalia ,  Nicole E. Thomas

发明人： Emanuel I. Cooper ,  Eileen Sparks ,  William R. Bowers ,  Mark A. Biscotto ,  Kevin P. Yanders ,  Michael B. Korzenski ,  Prerna Sonthalia ,  Nicole E. Thomas

IPC分类号： H05K3/00 ,  C01B33/107 ,  C09K13/08

CPC分类号： H01L21/31111 ,  B65D85/70 ,  C09K13/08 ,  G03F7/422 ,  H01L21/0206 ,  H01L2924/0002 ,  H01L2924/00

摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.

摘要翻译： 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。