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    STABILIZED QUANTUM DOT STRUCTURE AND METHOD OF MAKING A STABILIZED QUANTUM DOT STRUCTURE
    23.
    发明申请
    STABILIZED QUANTUM DOT STRUCTURE AND METHOD OF MAKING A STABILIZED QUANTUM DOT STRUCTURE 有权
    稳定量子点结构和制造稳定量子点结构的方法

    公开(公告)号：US20170005241A1

    公开(公告)日：2017-01-05

    申请号：US15196906

    申请日：2016-06-29

    Applicant: Cree, Inc.

    Inventor： Kenneth Lotito ,  Ryan Gresback ,  Paul Fini ,  James Ibbetson ,  Bernd Keller

    IPC: H01L33/50 ,  H01L33/48 ,  H01L33/60 ,  H01L33/52

    CPC classification number: H01L33/505 ,  B82B1/00 ,  B82B3/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L33/483 ,  H01L33/502 ,  H01L33/52 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00012 ,  H01L2924/00014

    Abstract: A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cm2 at a temperature of 80-85° C. and relative humidity of 5% for 500 hours.

    Abstract translation: 根据一个实施例，用于发光二极管（LED）的稳定的量子点结构包括：包含一个或多个半导体的发光颗粒，覆盖发光颗粒的缓冲层，其中缓冲层包括无定形材料，以及 阻挡层覆盖缓冲层，其中阻挡层包括氧，氮和/或碳。 根据另一个实施方案，稳定的量子点结构包括包含一个或多个半导体的发光粒子，以及包含覆盖发光粒子的无定形二氧化硅的经处理的缓冲层，其中稳定的量子点结构在暴露时显示出至少约0.7的量子产率 在80-85℃的温度和5％的相对湿度下达到约30W / cm 2的蓝光通量500小时。

    Solid state lighting apparatus with high scotopic/photopic (S/P) ratio
    25.
    发明授权
    Solid state lighting apparatus with high scotopic/photopic (S/P) ratio 有权
    具有高scotopic / photopic（S / P）比率的固态照明装置

    公开(公告)号：US09240528B2

    公开(公告)日：2016-01-19

    申请号：US14045474

    申请日：2013-10-03

    Applicant: Cree, Inc.

    Inventor： Michael Bergmann ,  James Ibbetson ,  David Clatterbuck ,  Charles Draper ,  Nalini Gupta

    IPC: H01L29/20 ,  H01L33/50 ,  H01L25/075 ,  H01L33/54

    CPC classification number: H01L33/50 ,  H01L25/0753 ,  H01L33/504 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2924/12044 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Solid state light emitting apparatuses include blue LEDs (e.g., including short wavelength and long wavelength blue LEDs in combination) to stimulate green lumiphors, with supplemental emissions by red lumiphors and/or red solid state light emitters, to provide aggregate emissions with high S/P ratio (e.g., ≧1.95) and high color rendering values (e.g., ≧85), preferably in combination with high brightness and high luminous efficacy. In certain embodiments, a light emitting apparatus may be devoid of a LED having a peak wavelength of from 470-599 nm and/or devoid of lumiphors with peak wavelengths in the yellow range. Multiple LEDs may be arranged in an emitter package. A fabrication method includes mounting multiple solid state emitters (e.g., with a first blue and a second red emitter) to a common substrate, applying a stencil or mask over the second emitter, applying a lumiphoric material over the first emitter, and removing the stencil or mask.

    Abstract translation: 固态发光装置包括蓝色LED（例如，组合包括短波长和长波长蓝色LED），以刺激绿色荧光体，由红色荧光体和/或红色固态发光体补充发射，以提供高S / P比（例如≥1.95）和高显色值（例如，≥85），优选结合高亮度和高发光效率。 在某些实施例中，发光装置可以没有具有470-599nm的峰值波长的LED和/或没有峰值波长在黄色范围内的发光体。 多个LED可以布置在发射器封装中。 一种制造方法包括将多个固态发射器（例如，具有第一蓝色和第二红色发射器）安装到公共衬底上，在第二发射体上施加模板或掩模，在第一发射体上施加荧光材料，以及去除模板 或面具。

    CHIP WITH INTEGRATED PHOSPHOR
    26.
    发明申请
    CHIP WITH INTEGRATED PHOSPHOR 审中-公开
    芯片与一体化磷

    公开(公告)号：US20140217443A1

    公开(公告)日：2014-08-07

    申请号：US14053404

    申请日：2013-10-14

    Applicant: CREE, INC.

    Inventor： Sten Heikman ,  James Ibbetson ,  Zhimin Jamie Yao ,  Fan Zhang ,  Matthew Donofrio ,  Christopher P. Hussell ,  John A. Edmond

    IPC: H01L33/50 ,  H01L33/60

    CPC classification number: H01L33/50 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/44 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

    Abstract: This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed.

    Abstract translation: 本公开涉及发光器件及其制造方法，包括侧面和/或多面发光器件。 根据本公开的实施例包括使用功能层，其可以包括与发光器的一个或多个部分的间隔距离，以在进一步的器件处理期间提高功能层的稳定性。 功能层可以进一步包括翼状部分，允许光发射器的下侧部分的涂覆进一步与发射的光和功能层上的反射层涂层相互作用，以进一步改善光提取和发光均匀性。 还公开了包括使用虚拟晶片结构的方法的制造方法。

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