公开(公告)号：US20080108182A1

公开(公告)日：2008-05-08

申请号：US11928708

申请日：2007-10-30

Applicant: Chien Ping Huang ,  Yu-Po Wang ,  Chih-Ming Huang

Inventor： Chien Ping Huang ,  Yu-Po Wang ,  Chih-Ming Huang

IPC: H01L21/68

CPC classification number: H01L21/4857 ,  H01L21/4832 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/58 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H05K3/007 ,  H05K3/3457 ,  H05K3/4682 ,  H05K2203/0152 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.

Abstract translation: 提供一种半导体封装及其制造方法，其中使用形成有多个开口的电介质材料层，并且将焊料材料施加到每个开口中。 第一铜层和第二铜层又沉积在介电材料层和焊料材料上，并且第一和第二铜层被图案化以形成多个导电迹线，每个导电迹线具有涂覆有金属层的端子。 芯片安装在导电迹线上，并通过接合线电连接到端子，电介质材料层和焊料材料暴露于外部。 该封装结构可以灵活地布置导电迹线并有效地缩短接合线，从而提高半导体封装的迹线布线性和电连接质量。

公开(公告)号：US20050253284A1

公开(公告)日：2005-11-17

申请号：US10972200

申请日：2004-10-22

Applicant: Yu-Po Wang ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

Inventor： Yu-Po Wang ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC: H01L21/56 ,  H01L21/60 ,  H01L23/13 ,  H01L23/28 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L23/49822 ,  H01L21/561 ,  H01L23/13 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/73215 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor package and a method for fabricating the same are proposed. A substrate having a first circuit layer, a second circuit layer, and a core layer formed between the first and second circuit layers is provided. At least one second opening is formed on the second circuit layer. At least one first opening is formed on the first circuit layer corresponding to the second opening. A plurality of finger holes corresponding to bond fingers on the first circuit layer are formed in the core layer. A through opening is formed in the core layer and communicates with the first and second openings. At least one chip is mounted on the first circuit layer and covers the first opening, with its active surface being exposed to the first opening. An encapsulant is formed to fill the first and second openings and the through opening and encapsulate the chip.

Abstract translation: 提出了一种半导体封装及其制造方法。 提供了具有形成在第一和第二电路层之间的第一电路层，第二电路层和芯层的衬底。 在第二电路层上形成至少一个第二开口。 在对应于第二开口的第一电路层上形成至少一个第一开口。 在芯层中形成与第一电路层上的接合指状对应的多个指孔。 在芯层中形成通孔，并与第一和第二开口连通。 至少一个芯片安装在第一电路层上并且覆盖第一开口，其有源表面暴露于第一开口。 形成密封剂以填充第一和第二开口和通孔并封装芯片。

公开(公告)号：US06884652B2

公开(公告)日：2005-04-26

申请号：US10420427

申请日：2003-04-22

Applicant: Chien Ping Huang ,  Yu-Po Wang ,  Chih-Ming Huang

Inventor： Chien Ping Huang ,  Yu-Po Wang ,  Chih-Ming Huang

IPC: H01L21/48 ,  H01L21/68 ,  H01L23/31 ,  H01L21/44 ,  H01L21/50

CPC classification number: H01L21/4832 ,  H01L21/4857 ,  H01L23/3121 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/85399 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.

公开(公告)号：US07939383B2

公开(公告)日：2011-05-10

申请号：US11928708

申请日：2007-10-30

Applicant: Chien Ping Huang ,  Yu-Po Wang ,  Chih-Ming Huang

Inventor： Chien Ping Huang ,  Yu-Po Wang ,  Chih-Ming Huang

IPC: H01L21/00

CPC classification number: H01L21/4857 ,  H01L21/4832 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/58 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H05K3/007 ,  H05K3/3457 ,  H05K3/4682 ,  H05K2203/0152 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.

Abstract translation: 提供一种半导体封装及其制造方法，其中使用形成有多个开口的电介质材料层，并且将焊料材料施加到每个开口中。 第一铜层和第二铜层又沉积在介电材料层和焊料材料上，并且第一和第二铜层被图案化以形成多个导电迹线，每个导电迹线具有涂覆有金属层的端子。 芯片安装在导电迹线上，并通过接合线电连接到端子，电介质材料层和焊料材料暴露于外部。 该封装结构可以灵活地布置导电迹线并有效地缩短接合线，从而提高半导体封装的迹线布线性和电连接质量。

公开(公告)号：US07808110B2

公开(公告)日：2010-10-05

申请号：US12011906

申请日：2008-01-30

Applicant: Yu-Po Wang ,  Chien-Ping Huang ,  Wei-Chun Lin ,  Wen Cheng Lee

Inventor： Yu-Po Wang ,  Chien-Ping Huang ,  Wei-Chun Lin ,  Wen Cheng Lee

IPC: H01L29/40

CPC classification number: H01L23/49838 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A semiconductor package substrate proposed by the invention includes a base body and a plurality of finger pads disposed on surface of the base body, wherein the finger pads are arranged in such a way that an angle is formed between connecting line of centers of two adjacent finger pads and the direction in which the finger pads are arranged. The finger pads are waterdrop shaped finger pads with arc ends and angle ends alternately disposed on surface of the substrate, alternately disposed waterdrop shaped finger pads and arc shaped finger pads, or alternately disposed arc shaped finger pads at a predetermined spacing. According to the present invention, distance between adjacent finger pads is reduced and problem of short circuit as a result of erroneous contact between bonding wire and adjacent finger pad is prevented.

Abstract translation: 本发明提出的半导体封装基板包括基体和设置在基体表面上的多个指垫，其中指垫以这样一种方式布置，使得两个相邻手指的中心的连接线之间形成一角度 垫和指垫的排列方向。 手指垫是具有弧端的水滴状指垫，并且角度端交替地设置在基板的表面上，交替地设置水滴形指状垫和弧形指状垫，或者以预定间隔交替布置的圆弧形指垫。 根据本发明，相邻指垫之间的距离减小，并且防止了接合线和相邻指垫之间的错误接触的结果导致的短路问题。

公开(公告)号：US20080088011A1

公开(公告)日：2008-04-17

申请号：US11974441

申请日：2007-10-12

Applicant: Han-Ping Hu ,  Chien-Ping Huang ,  Chih-Ming Huang ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

Inventor： Han-Ping Hu ,  Chien-Ping Huang ,  Chih-Ming Huang ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

IPC: H01L23/49 ,  H01L21/58

CPC classification number: H01L21/568 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/16151 ,  H01L2924/16195 ,  H01L2924/18161 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor package on which a semiconductor device can be stacked and fabrication method thereof are provided. The fabrication method includes the steps of mounting and electrically connecting at least one semiconductor chip on the substrate, mounting an electrical connecting structure consisting of an upper layer circuit board and a lower layer circuit board on the substrate and electrically connecting the electrical connecting structure to the substrate, where the semiconductor chip is received in a receiving space formed in the electrical connecting structure; forming an encapsulant on the substrate encapsulating the semiconductor chip and the electrical connecting structure, and after the encapsulant is formed, exposing top surface of the upper layer circuit board with a plurality of solder pads from the encapsulant to allow at least one semiconductor device to electrically connect the upper layer circuit board so as to form a stack structure.

Abstract translation: 提供半导体器件可堆叠的半导体封装件及其制造方法。 该制造方法包括以下步骤：在基板上安装和电连接至少一个半导体芯片，将由上层电路板和下层电路板组成的电连接结构安装在基板上，并将电连接结构电连接到 衬底，其中所述半导体芯片被容纳在形成在所述电连接结构中的接收空间中; 在封装半导体芯片和电连接结构的基板上形成密封剂，并且在形成密封剂之后，用来自密封剂的多个焊盘将上层电路板的顶表面曝光，以允许至少一个半导体器件电 连接上层电路板，形成堆叠结构。

公开(公告)号：US20070181990A1

公开(公告)日：2007-08-09

申请号：US11591974

申请日：2006-11-01

Applicant: Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

Inventor： Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

IPC: H01L23/02 ,  H01L21/00

CPC classification number: H01L23/3128 ,  H01L21/561 ,  H01L21/565 ,  H01L23/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A stacked semiconductor structure and fabrication method thereof are provided. The method includes mounting and connecting electrically a semiconductor chip to a first substrate, mounting on the first substrate a plurality of supporting members corresponding in position to a periphery of the semiconductor chip, mounting a second substrate having a first surface partially covered with a tape and a second surface opposite to the first surface on the supporting members via the second surface, connecting electrically the first and second substrates by bonding wires, forming on the first substrate an encapsulant for encapsulating the semiconductor chip, the supporting members, the second substrate, the bonding wires, and the tape with an exposed top surface, and removing the tape to expose the first surface of the second substrate and allow an electronic component to be mounted thereon. The present invention prevents reflow-induced contamination, spares a special mold, and eliminates flash.

Abstract translation: 提供了堆叠半导体结构及其制造方法。 该方法包括将半导体芯片电连接到第一基板上，在第一基板上安装多个对应于半导体芯片的周边的支撑部件，安装第二基板，该第二基板具有部分被带覆盖的第一表面， 经由第二表面与支撑构件上的第一表面相对的第二表面，通过接合线电连接第一和第二基板，在第一基板上形成用于封装半导体芯片的密封剂，支撑构件，第二基板， 接合线和具有暴露的顶表面的带，并且移除带以露出第二基板的第一表面并允许电子部件安装在其上。 本发明防止回流引起的污染，备有特殊的模具，并消除闪光。

公开(公告)号：US07205674B2

公开(公告)日：2007-04-17

申请号：US10632709

申请日：2003-07-31

Applicant: Chien-Ping Huang ,  Yu-Po Wang

Inventor： Chien-Ping Huang ,  Yu-Po Wang

IPC: H01L23/28 ,  H01L23/48

CPC classification number: H01L24/10 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/19 ,  H01L24/24 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/20 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/00

Abstract: A semiconductor package with build-up layers formed on a chip and a fabrication method of the semiconductor package are provided. A chip with a plurality of conductive bumps formed on bond pads thereof is received within a cavity of a carrier, and a dielectric layer encapsulates the conductive bumps whose ends are exposed. A plurality of conductive traces are formed on the dielectric layer and electrically connected to the ends of the conductive bumps. A solder mask layer is applied over the conductive traces and formed with openings via which predetermined portions of the conductive traces are exposed and bonded to a plurality of solder balls. Thereby, positions of the bond pads are easily recognized and distinguished by the exposed ends of the conductive bumps, making the conductive traces capable of being well electrically connected through the conductive bumps to the bond pads to improve yield of the fabricated packages.

Abstract translation: 提供了一种形成在芯片上的积层的半导体封装以及半导体封装的制造方法。 在其接合焊盘上形成有多个导电凸块的芯片被容纳在载体的空腔内，并且介电层封装其端部露出的导电凸块。 多个导电迹线形成在电介质层上并与导电凸块的端部电连接。 焊接掩模层施加在导电迹线上并形成有开口，通过该开口，导电迹线的预定部分暴露并结合到多个焊球。 因此，接合焊盘的位置容易地被导电凸块的露出端识别和区分，使得导电迹线能够通过导电凸块与接合焊盘良好地电连接，以提高制造的封装的产量。

公开(公告)号：US07205642B2

公开(公告)日：2007-04-17

申请号：US10972200

申请日：2004-10-22

Applicant: Yu-Po Wang ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

Inventor： Yu-Po Wang ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC: H01L23/495

CPC classification number: H01L23/49822 ,  H01L21/561 ,  H01L23/13 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/73215 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor package and a method for fabricating the same are proposed. A substrate having a first circuit layer, a second circuit layer, and a core layer formed between the first and second circuit layers is provided. At least one second opening is formed on the second circuit layer. At least one first opening is formed on the first circuit layer corresponding to the second opening. A plurality of finger holes corresponding to bond fingers on the first circuit layer are formed in the core layer. A through opening is formed in the core layer and communicates with the first and second openings. At least one chip is mounted on the first circuit layer and covers the first opening, with its active surface being exposed to the first opening. An encapsulant is formed to fill the first and second openings and the through opening and encapsulate the chip.

Abstract translation: 提出了一种半导体封装及其制造方法。 提供了具有形成在第一和第二电路层之间的第一电路层，第二电路层和芯层的衬底。 在第二电路层上形成至少一个第二开口。 在对应于第二开口的第一电路层上形成至少一个第一开口。 在芯层中形成与第一电路层上的接合指状对应的多个指孔。 在芯层中形成通孔，并与第一和第二开口连通。 至少一个芯片安装在第一电路层上并且覆盖第一开口，其有源表面暴露于第一开口。 形成密封剂以填充第一和第二开口和通孔并封装芯片。

公开(公告)号：US20060246706A1

公开(公告)日：2006-11-02

申请号：US11401882

申请日：2006-04-12

Applicant: Chun Chi Ke ,  Chien-Ping Huang ,  Don-Son Jiung ,  Yu-Po Wang

Inventor： Chun Chi Ke ,  Chien-Ping Huang ,  Don-Son Jiung ,  Yu-Po Wang

IPC: H01L21/44

CPC classification number: H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/13099

Abstract: A conductive bump structure for a semiconductor device and a method for fabricating the same are provided. A metal bump is formed on an under bump metallurgy (UBM) structure electrically connected to and formed on a connection pad of the semiconductor device, wherein the metal bump is sized smaller than the UBM structure. Subsequently, a solder bump is mounted on the UBM structure and encapsulates the metal bump, so as to increase the bonding area and simultaneously allow the solder bump to be sufficiently wetted on the UBM structure to enhance bonding stress of the solder bump.

Abstract translation: 提供了一种用于半导体器件的导电凸块结构及其制造方法。 金属凸块形成在电连接到半导体器件的连接焊盘上并形成在半导体器件的连接焊盘上的凸块下冶金（UBM）结构上，其中金属凸块的尺寸小于UBM结构。 随后，在UBM结构上安装焊料凸点并封装金属凸块，以便增加接合面积，并同时允许焊料凸块在UBM结构上充分润湿以增强焊料凸块的粘结应力。