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    Contact hole formation methods
    24.
    发明授权
    Contact hole formation methods 有权
    接触孔形成方法

    公开(公告)号：US09455177B1

    公开(公告)日：2016-09-27

    申请号：US14840941

    申请日：2015-08-31

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

    Inventor： Jong Keun Park ,  Phillip D. Hustad

    IPC: H01L21/768 ,  H01L21/033 ,  H01L21/02

    CPC classification number: H01L21/76816 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/76828

    Abstract: Methods of forming contact holes comprising: (a) providing a substrate comprising a plurality of post patterns over a layer to be patterned; (b) forming a hardmask layer over the post patterns and the layer to be patterned; (c) coating a pattern treatment composition over the hardmask layer, wherein the pattern treatment composition comprises a polymer comprising a reactive surface attachment group and a solvent; and optionally baking the substrate; wherein the polymer becomes bonded to the hardmask layer to form a polymer layer over the hardmask layer; and (d) treating the substrate with a rinsing agent comprising a solvent to remove residual, unbound said polymer, thereby forming a first hole disposed between a plurality of surrounding post patterns. The method is free of exposing the polymer to activating radiation from coating the pattern treatment composition to treating the substrate with the solvent. Also provided are pattern treatment compositions and electronic devices formed by the methods. The inventions find particular applicability in the manufacture of semiconductor devices for providing high resolution contact hole patterns.

    Abstract translation: 形成接触孔的方法包括：（a）在待图案化的层上提供包括多个柱状图案的基底; （b）在柱状图案和待图案化层上形成硬掩模层; （c）在所述硬掩模层上涂覆图案处理组合物，其中所述图案处理组合物包含包含反应性表面附着基团和溶剂的聚合物; 并可选地烘烤该基材; 其中所述聚合物结合到所述硬掩模层以在所述硬掩模层上形成聚合物层; 和（d）用包括溶剂的漂洗剂处理基材以除去残留的未结合的所述聚合物，从而形成设置在多个周围柱状图案之间的第一孔。 该方法不会将聚合物暴露于从涂覆图案处理组合物到用溶剂处理底物的活化辐射。 还提供了通过该方法形成的图案处理组合物和电子装置。 本发明特别适用于制造用于提供高分辨率接触孔图案的半导体器件。

    COPOLYMER FORMULATION FOR DIRECTED SELF ASSEMBLY, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME
    25.
    发明申请
    COPOLYMER FORMULATION FOR DIRECTED SELF ASSEMBLY, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME 审中-公开
    用于方向自组装的共聚物配方，其制造方法和包含其的制品

    公开(公告)号：US20160186001A1

    公开(公告)日：2016-06-30

    申请号：US14944466

    申请日：2015-11-18

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

    Inventor： Phillip D. Hustad ,  Jieqian Zhang ,  Peter Trefonas, III

    IPC: C09D153/00 ,  C09D133/12

    CPC classification number: C09D153/00 ,  C09D133/068 ,  G03F7/0002 ,  C08L53/00

    Abstract: Disclosed herein is a pattern forming method comprising providing a substrate devoid of a layer of a brush polymer; disposing upon the substrate a composition comprising a block copolymer comprising a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other; an additive polymer comprising a reactive functional moiety that forms a bond with or a complex or a coordinate with the substrate upon being disposed on the substrate; and a solvent; and annealing the composition to facilitate bonding or complexation or coordination of the additive polymer to the substrate and domain separation between the first polymer and the second polymer of the block copolymer to form a morphology of periodic domains formed from the first polymer and the second polymer.

    Abstract translation: 本文公开了一种图案形成方法，包括提供没有刷聚合物层的基底; 将包含第一聚合物和第二聚合物的嵌段共聚物的组合物置于基材上; 其中所述嵌段共聚物的第一聚合物和第二聚合物彼此不同; 一种添加剂聚合物，其包含反应性官能部分，所述反应性官能部分在被布置在所述基材上时与所述基材形成结合或与所述基体形成复合物或坐标; 和溶剂; 以及退火所述组合物以促进所述添加剂聚合物与所述基材的结合或络合或配位，以及所述第一聚合物和所述嵌段共聚物的第二聚合物之间的域分离，以形成由所述第一聚合物和所述第二聚合物形成的周期性畴的形态。

    METHODS FOR MANUFACTURING BLOCK COPOLYMERS AND ARTICLES MANUFACTURED THEREFROM
    27.
    发明申请
    METHODS FOR MANUFACTURING BLOCK COPOLYMERS AND ARTICLES MANUFACTURED THEREFROM 有权
    制备块状共聚物的方法及其制备的制品

    公开(公告)号：US20150376408A1

    公开(公告)日：2015-12-31

    申请号：US14745551

    申请日：2015-06-22

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  ROHM AND HAAS ELECTRONIC MATERIALS LLC

    Inventor： Jieqian Zhang ,  Phillip D. Hustad ,  Peter Trefonas, III ,  Mingqi Li ,  Valeriy V. Ginzburg ,  Jeffrey D. Weinhold

    IPC: C08L83/10 ,  H01L21/311 ,  C08L25/08

    CPC classification number: H01L21/311 ,  B82Y30/00 ,  B82Y40/00 ,  C08G77/442 ,  C08L25/08 ,  C08L2205/025 ,  C08L2205/035 ,  C09D183/10 ,  G03F7/0002 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31138 ,  C08L25/00 ,  C08L83/00

    Abstract: Disclosed herein is a composition comprising a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the weight percent based on total solids of the first block of the second block copolymer is greater than that of the first block of the first block copolymer; where the first block copolymer phase separates into a first morphology of cylindrical or lamellar domains when disposed singly on a substrate.

    Abstract translation: 本文公开了包含第一嵌段共聚物的组合物，其包含第一嵌段和第二嵌段; 其中第一块具有比第二块更高的表面能; 第二嵌段共聚物，其包含第一嵌段和第二嵌段; 其中第一嵌段共聚物的第一嵌段与第二嵌段共聚物的第一嵌段化学相同或类似，第一嵌段共聚物的第二嵌段化学上与第二嵌段共聚物的第二嵌段相同或相似 ; 其中基于第二嵌段共聚物的第一嵌段的总固体的重量百分比大于第一嵌段共聚物的第一嵌段的重量百分数; 其中第一嵌段共聚物相分离成单个单独置于基材上时的圆柱形或层状结构域的第一形态。

    Gap-fill methods
    28.
    发明授权
    Gap-fill methods 有权
    间隙填充方法

    公开(公告)号：US09209067B2

    公开(公告)日：2015-12-08

    申请号：US14542428

    申请日：2014-11-14

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

    Inventor： Jong Keun Park ,  Cheng-Bai Xu ,  Phillip D. Hustad ,  Mingqi Li

    IPC: H01L21/762

    CPC classification number: H01L21/76224

    Abstract: Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and a crosslinkable group pendant to the backbone; and (c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

    Abstract translation: 提供间隙填充方法。 所述方法包括：（a）提供在衬底的表面上具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含自交联聚合物和溶剂，其中所述自交联聚合物包含第一单元，所述第一单元包含聚合主链和可交联基团， 骨干 和（c）在温度下加热间隙填充组合物以使聚合物自交联。 该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。

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