公开(公告)号：US06645884B1

公开(公告)日：2003-11-11

申请号：US09350810

申请日：1999-07-09

申请人： Michael X. Yang ,  Chien-Teh Kao ,  Karl Littau ,  Steven A. Chen ,  Henry Ho ,  Ying Yu

发明人： Michael X. Yang ,  Chien-Teh Kao ,  Karl Littau ,  Steven A. Chen ,  Henry Ho ,  Ying Yu

IPC分类号： H01L2102

CPC分类号： C23C16/4412 ,  C23C16/345

摘要： The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

摘要翻译： 本发明提供了在半导体晶片上形成氮化硅层的方法和装置。 半导体晶片位于半导体处理室内的基座上。 将载气，氮源气体和硅源气体引入到半导体处理室中，并且将半导体晶片在室内的压力下暴露于大约100至500托的范围内的气体混合物。

公开(公告)号：US09589692B2

公开(公告)日：2017-03-07

申请号：US12972384

申请日：2010-12-17

申请人： David K. Fork ,  Karl Littau

发明人： David K. Fork ,  Karl Littau

IPC分类号： H01M4/04 ,  H01B1/00 ,  B29C47/06 ,  H01M4/86 ,  H01M4/02 ,  H01G11/26 ,  B29C47/00 ,  B29C47/70 ,  H01M4/88 ,  H01M12/06 ,  H01G11/86

CPC分类号： H01B1/00 ,  B29C47/0019 ,  B29C47/065 ,  B29C47/705 ,  B29C47/707 ,  H01G11/26 ,  H01G11/86 ,  H01M4/02 ,  H01M4/0411 ,  H01M4/8626 ,  H01M4/8864 ,  H01M12/06 ,  Y02E60/13 ,  Y02E60/50

摘要： An electrode structure has a layer of at least two interdigitated materials, a first material being an electrically conductive material and a second material being an ionically conductive material, the materials residing co-planarly on a membrane in fluid form, at least one of the interdigitated materials forming a feature having an aspect ratio greater than one. A method of forming an electrode structure includes merging flows of an electrically conductive material and a second material in a first direction into a first combined flow, dividing the first combined flow in a second direction to produce at least two separate flows, each separate flow including flows of the electrically conductive material and the second material, merging the two separate flows into a second combined flow, repeating the merging and dividing flow as desired to produce a final combined flow, and depositing the final combined flow as an interdigitated structure in fluid form onto a substrate such that at least one of the materials forms a feature in the structure having an aspect ratio greater than one.

摘要翻译： 电极结构具有至少两个交叉指向的材料层，第一材料是导电材料，第二材料是离子导电材料，该材料共同平面地位于流体形式的膜上，至少一个交叉指向 形成纵横比大于1的特征的材料。 形成电极结构的方法包括将第一方向上的导电材料和第二材料的流动合并成第一组合流，将第一组合流沿第二方向分开以产生至少两个单独的流，每个分离的流包括 导电材料和第二材料的流动，将两个分离的流合并成第二组合流，根据需要重复合并和分流以产生最终的组合流，并将最终的组合流作为交错结构沉积成流体形式 使得至少一种材料形成具有大于1的纵横比的结构中的特征。

公开(公告)号：US20070218688A1

公开(公告)日：2007-09-20

申请号：US11749016

申请日：2007-05-15

申请人： Ming Xi ,  Ashok Sinha ,  Moris Kori ,  Alfredq Mak ,  Xinliang Lu ,  Ken Lai ,  Karl Littau

发明人： Ming Xi ,  Ashok Sinha ,  Moris Kori ,  Alfredq Mak ,  Xinliang Lu ,  Ken Lai ,  Karl Littau

IPC分类号： H01L21/44

CPC分类号： C23C16/0272 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876

摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.

摘要翻译： 在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中 处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层 沉积工艺。 在一个实例中，含钨层和钨体层沉积在相同的处理室内。

公开(公告)号：US20060070653A1

公开(公告)日：2006-04-06

申请号：US10957946

申请日：2004-10-04

申请人： Scott Elrod ,  Karl Littau ,  Thomas Hantschel ,  Raj Apte ,  David Biegelsen

发明人： Scott Elrod ,  Karl Littau ,  Thomas Hantschel ,  Raj Apte ,  David Biegelsen

IPC分类号： H01L31/00

CPC分类号： H01L51/4226 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0046 ,  H01L51/4253 ,  Y02E10/549 ,  Y02P70/521

摘要： In accordance with one aspect of the present application, a solar photovoltaic cell is disclosed. The semiconductor material of the solar photovoltaic cell includes an inter-digitated nanostructure of a charge transport material and an optical absorbing material. The charge transport material is formed by anodization of a metal, preferably a transition metal. The resultant charge transport material has an array of discrete, substantially parallel and cylindrical pores formed therein. These pores are filled with the optical semiconductor material, which can include a solution of organic semiconducting materials or an inorganic semiconducting oxide material.

摘要翻译： 根据本申请的一个方面，公开了一种太阳能光伏电池。 太阳能光伏电池的半导体材料包括电荷输送材料和光学吸收材料的数字化的纳米结构。 电荷传输材料通过金属阳极氧化，优选过渡金属形成。 所得的电荷输送材料具有在其中形成的离散的，基本平行的和圆柱形的孔的阵列。 这些孔填充有可以包括有机半导体材料或无机半导体氧化物材料的溶液的光学半导体材料。

公开(公告)号：US20050200236A1

公开(公告)日：2005-09-15

申请号：US11104887

申请日：2005-04-13

申请人： Steven Buhler ,  John Fitch ,  Meng Lean ,  Karl Littau

发明人： Steven Buhler ,  John Fitch ,  Meng Lean ,  Karl Littau

IPC分类号： B41J2/14 ,  B41J2/16 ,  H01L41/09 ,  H01L41/24

CPC分类号： B41J2/14233 ,  B41J2/14282 ,  B41J2/161 ,  B41J2/1614 ,  B41J2/1632 ,  H01L41/0973 ,  H01L41/257 ,  H01L41/313 ,  H01L41/314 ,  H01L41/331 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/4921 ,  Y10T29/49401

摘要： A circuit provides energy to a plurality of piezoelectric diaphragm structures formed in a two-dimensional array. Each piezoelectric diaphragm structure includes a piezoelectric element in operational contact with at least a first side electrode and a second side electrode. A switching system includes a first connection for a first power source, for application of power to the first side electrode and a second connection for a second power source, for application of power to the second side electrode. In a first state, power appropriate for performing a poling operation of the piezoelectric material is available for application to the first electrode, and the second electrode, and in a second state, power appropriate to activate the piezoelectric material to cause operational movement of the poled piezoelectric diaphragm structure is available for application to the first electrode and the second electrode.

摘要翻译： 电路向以二维阵列形成的多个压电振膜结构提供能量。 每个压电膜结构包括与至少第一侧电极和第二侧电极操作接触的压电元件。 交换系统包括用于第一电源的第一连接，用于向第一侧电极施加电力和用于第二电源的第二连接，用于向第二侧电极施加电力。 在第一状态下，适于执行压电材料的极化操作的电力可用于施加到第一电极和第二电极，并且在第二状态下，适于激活压电材料的动力引起极化的操作运动 压电膜结构可应用于第一电极和第二电极。

公开(公告)号：US20050134152A1

公开(公告)日：2005-06-23

申请号：US10740292

申请日：2003-12-18

申请人： Meng Lean ,  Steven Buhler ,  John Fitch ,  Karl Littau

发明人： Meng Lean ,  Steven Buhler ,  John Fitch ,  Karl Littau

IPC分类号： H01L41/047 ,  H01L41/09

CPC分类号： H01L41/0973 ,  H01L41/047

摘要： In accordance with one embodiment of the present application, a piezoelectric diaphragm structure includes a diaphragm, with a piezoelectric material located on the diaphragm. The piezoelectric material is being poled in a radial direction to the piezoelectric material, wherein the poling direction is in-plane with the piezoelectric material. An inter-digitated electrode grid is positioned on a first surface of the piezoelectric material, the inter-digitated electrode grid including a plurality of electrodes configured to selectively receive positive and negative voltage. The application of the positive and negative voltages generate electric fields in the piezoelectric material, at least a portion of which are in-plane with the piezoelectric material, resulting in an actuation of the piezoelectric material, causing a length change of the piezoelectric material in the Radial direction. In accordance with another embodiment of the present application, provided is a method of actuating a piezoelectric diaphragm structure, including poling a piezoelectric material in a radial direction of the piezoelectric material, wherein the poling direction is in-plane with the piezoelectric material. The piezoelectric material is located in operative contact with the diaphragm, and an electrode arrangement located on a surface of the piezoelectric material is selectively supplied with voltages generating electric fields. The generated electric fields are at least partially in the same plane as the poling direction, resulting in a d33 mode of actuation of the piezoelectric material, causing a length change of the piezoelectric material in the Radial direction.

摘要翻译： 根据本申请的一个实施例，压电振膜结构包括隔膜，压电材料位于隔膜上。 压电材料在压电材料的径向方向上被极化，其中极化方向与压电材料成平面。 数字化电极栅格位于压电材料的第一表面上，数字化电极栅格包括多个电极，其被配置为选择性地接收正电压和负电压。 正压和负电压的施加在压电材料中产生电场，其压电材料的至少一部分与压电材料成平面，导致压电材料的致动，导致压电材料的长度变化 径向。 根据本申请的另一实施例，提供了一种致动压电膜结构的方法，包括在压电材料的径向方向上极化压电材料，其中极化方向与压电材料成平面。 压电材料位于与隔膜有效接触的位置，并且位于压电材料表面上的电极装置被选择性地供给产生电场的电压。 产生的电场至少部分地在与极化方向相同的平面中，导致压电材料的致动模式，导致压电材料在径向方向上的长度变化。

公开(公告)号：US20050104479A1

公开(公告)日：2005-05-19

申请号：US11017494

申请日：2004-12-20

申请人： Baomin Xu ,  Steven Buhler ,  Michael Welsberg ,  William Wong ,  Scott Solberg ,  Karl Littau ,  John Fitch ,  Scott Elrod

发明人： Baomin Xu ,  Steven Buhler ,  Michael Welsberg ,  William Wong ,  Scott Solberg ,  Karl Littau ,  John Fitch ,  Scott Elrod

IPC分类号： B41J2/16 ,  H01L41/24 ,  H01L41/08

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1637 ,  B41J2/1646 ,  H01L41/313 ,  H01L41/314 ,  H01L41/331 ,  H01L2221/68368 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49155 ,  Y10T29/4981

摘要： A piezoelectric thick film element array includes at least one piezoelectric element structure having a thickness between 10 μm to 100 μm formed by a deposition process. The at least one piezoelectric element is patterned during the deposition process, and includes a first electrode deposited on a first surface of the piezoelectric elements structure, and a second electrode deposited on a second surface of the piezoelectric element structure. In a further embodiment, several devices are provided using a piezoelectric element or an array having a piezoelectric element structure with a thickness of between 10 μm to 100 μm formed by a deposition process. These devices include microfluidic ejectors, transducer arrays and catheters.

摘要翻译： 压电厚膜元件阵列包括通过沉积工艺形成的至少一个压电元件结构，其厚度在10um至100μm之间。 所述至少一个压电元件在所述沉积工艺期间被图案化，并且包括沉积在所述压电元件结构的第一表面上的第一电极和沉积在所述压电元件结构的第二表面上的第二电极。 在另一实施例中，使用压电元件或具有通过沉积工艺形成的厚度在10um至100μm之间的压电元件结构的阵列来提供若干器件。 这些装置包括微流体喷射器，换能器阵列和导管。

公开(公告)号：US06646235B2

公开(公告)日：2003-11-11

申请号：US10037151

申请日：2001-10-19

申请人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

发明人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

IPC分类号： H05B368

CPC分类号： H01L21/67103

摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

公开(公告)号：US06500742B1

公开(公告)日：2002-12-31

申请号：US09617515

申请日：2000-07-14

申请人： Chyi Chern ,  Michal Danek ,  Marvin Liao ,  Roderick C. Mosely ,  Karl Littau ,  Ivo Raaijmakers ,  David C. Smith

发明人： Chyi Chern ,  Michal Danek ,  Marvin Liao ,  Roderick C. Mosely ,  Karl Littau ,  Ivo Raaijmakers ,  David C. Smith

IPC分类号： H01L2144

CPC分类号： H01L21/76864 ,  C23C16/34 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862

摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

公开(公告)号：US06251758B1

公开(公告)日：2001-06-26

申请号：US08810221

申请日：1997-02-28

申请人： Chyi Chern ,  Michal Danek ,  Marvin Liao ,  Roderick C. Mosely ,  Karl Littau ,  Ivo Raaijmakers ,  David C. Smith

发明人： Chyi Chern ,  Michal Danek ,  Marvin Liao ,  Roderick C. Mosely ,  Karl Littau ,  Ivo Raaijmakers ,  David C. Smith

IPC分类号： H01L2128

CPC分类号： H01L21/76864 ,  C23C16/34 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01J2237/2001 ,  H01J2237/336 ,  H01L21/28512 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862

摘要： The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

摘要翻译： 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积一层材料。 接下来，将材料层退火。 一旦退火完成，材料可能被氧化。 或者，一旦退火完成，材料可能暴露于硅气体。 沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从腔室中移除晶片，直到完成所有三个步骤。 用于进行这种原位结构的半导体晶片处理室可以包括处理室，喷头，晶片支架和射频信号装置。 淋浴头将气体供应到处理室中，而晶片支撑件在处理室中支撑晶片。 rf信号装置耦合到喷头和晶片支架，用于向喷头提供第一rf信号，并将第二rf信号耦合到晶片支架。