公开(公告)号：US07733210B2

公开(公告)日：2010-06-08

申请号：US11378645

申请日：2006-03-20

申请人： Taisuke Furukawa ,  Hiroshi Kobayashi ,  Takashi Takenaga ,  Takeharu Kuroiwa ,  Beysen Sadeh ,  Masakazu Taki

发明人： Taisuke Furukawa ,  Hiroshi Kobayashi ,  Takashi Takenaga ,  Takeharu Kuroiwa ,  Beysen Sadeh ,  Masakazu Taki

IPC分类号： H01L43/00

CPC分类号： G01R33/093 ,  B82Y25/00

摘要： A magnetic field detector includes: a magnet; a detecting magnetic resistance element having a layer structure containing a ferromagnetic layer, the resistance being changed when a direction of magnetization of the ferromagnetic layer is changed; and a reference magnetic resistance element having substantially the same layer structure as that of the detecting magnetic resistance element. A magnetic field, the magnetic intensity of which is higher than the saturation magnetic field, is impressed by the magnet in a direction which is sensed by the ferromagnetic layer of the reference magnetic resistance element.

摘要翻译： 磁场检测器包括：磁体; 具有包含铁磁层的层结构的检测磁阻元件，所述电阻在所述铁磁层的磁化方向改变时改变; 以及具有与检测用磁阻元件基本相同的层结构的基准磁阻元件。 其磁强度高于饱和磁场的磁场被磁铁施加在由参考磁阻元件的铁磁层感测的方向上。

公开(公告)号：US07508203B2

公开(公告)日：2009-03-24

申请号：US12098291

申请日：2008-04-04

申请人： Takashi Takenaga ,  Hiroshi Kobayashi ,  Takeharu Kuroiwa ,  Sadeh Beysen ,  Taisuke Furukawa

发明人： Takashi Takenaga ,  Hiroshi Kobayashi ,  Takeharu Kuroiwa ,  Sadeh Beysen ,  Taisuke Furukawa

IPC分类号： G01R33/09 ,  G01R33/05 ,  G01B7/30

CPC分类号： G01R33/09 ,  B82Y25/00 ,  G01R15/205 ,  G01R33/093

摘要： A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other. Thus, it is possible to provide a magnetic field detector capable of singly calibrating the sensitivity and the resolution of the detector whenever required.

摘要翻译： 具有参考磁阻元件和磁场检测磁阻元件的磁场检测器。 参考磁阻元件和磁场检测磁阻元件各自具有堆叠结构，其包括反铁磁层，铁磁材料的固定层，其具有由反铁磁层固定的磁化方向，非磁性层和铁磁性层的自由层 具有适于由外部磁场改变的磁化方向的材料。 参考磁阻元件使得固定层的磁化方向和非磁场中的自由层的磁化方向彼此平行或反平行，并且磁场检测磁阻元件使得磁化方向 和非磁场中的自由层的磁化方向彼此不同。 因此，可以提供能够在需要时单独地校准检测器的灵敏度和分辨率的磁场检测器。

公开(公告)号：US06187622B1

公开(公告)日：2001-02-13

申请号：US09003515

申请日：1998-01-06

申请人： Takeharu Kuroiwa ,  Tsuyoshi Horikawa ,  Noboru Mikami ,  Tetsuro Makita

发明人： Takeharu Kuroiwa ,  Tsuyoshi Horikawa ,  Noboru Mikami ,  Tetsuro Makita

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L27/10852 ,  H01L28/60

摘要： A semiconductor memory device achieves a high capacitance value even when the elements are made extremely small as the degree of integration is increased. A method of producing such a semiconductor memory maintains a high capacitance value while achieving increased integration. A semiconductor memory device includes adjacent capacitor lower electrodes which are separated by a width of 0.2 &mgr;m while the ratio of the capacitor lower electrode height to the separation width is 1, the capacitor upper electrode covers the capacitor insulation film, and steps generated in the separated portion of the capacitor lower electrodes are filled by the upper electrode material. A method of manufacturing produces a semiconductor memory device wherein the capacitor upper electrode is formed in plasma which includes etchable gas by chemical or physical action.

摘要翻译： 即使当元件的集成度增加时，半导体存储器件也实现了高的电容值。 制造这种半导体存储器的方法保持高的电容值，同时实现增加的集成。 半导体存储器件包括相邻的电容器下电极，其间隔0.2μm的宽度，而电容器下电极高度与分离宽度的比率为1，电容器上电极覆盖电容器绝缘膜，并且分离的步骤 电容器下电极的一部分由上电极材料填充。 一种制造方法产生半导体存储器件，其中电容器上电极通过化学或物理作用形成包括可蚀刻气体的等离子体。

公开(公告)号：US5668041A

公开(公告)日：1997-09-16

申请号：US632194

申请日：1996-04-15

申请人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

发明人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L23/522 ,  H01L27/04 ,  H01L27/105 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/10852 ,  H01L21/3205 ,  H01L28/40 ,  H01L28/55 ,  Y10S257/915 ,  Y10S438/978

摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.

摘要翻译： 根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从 层间绝缘膜的顶面角到掩埋导电层的表面。 因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。

公开(公告)号：US5652186A

公开(公告)日：1997-07-29

申请号：US632195

申请日：1996-04-15

申请人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

发明人： Tomonori Okudaira ,  Takeharu Kuroiwa ,  Nobuo Fujiwara ,  Keiichiro Kashihara

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L23/522 ,  H01L27/04 ,  H01L27/105 ,  H01L21/00

CPC分类号： H01L27/10852 ,  H01L21/3205 ,  H01L28/40 ,  H01L28/55 ,  Y10S257/915 ,  Y10S438/978

摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.

摘要翻译： 根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从 层间绝缘膜的顶面角到掩埋导电层的表面。 因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。

公开(公告)号：US08036024B2

公开(公告)日：2011-10-11

申请号：US11442290

申请日：2006-05-30

申请人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Kobayashi ,  Sadeh Beysen

发明人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Kobayashi ,  Sadeh Beysen

IPC分类号： G11B5/39

CPC分类号： G11C11/15 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  Y10T428/1114 ,  Y10T428/1143

摘要： In a ferromagnetic tunnel junction element, a recording layer is in a circular shape, which can suppress an increase in magnetization switching field due to miniaturization of the element. Further, the recording layer includes a first ferromagnetic layer, a first non-magnetic layer, a second ferromagnetic layer, a second non-magnetic layer, and a third ferromagnetic layer successively stacked. The first and second ferromagnetic layers, and the second and third ferromagnetic layers are coupled antiparallel to each other, so that it is possible to control the magnetization distribution of the recording layer in an approximately single direction.

摘要翻译： 在铁磁隧道结元件中，记录层是圆形形状，这可以抑制由于元件的小型化引起的磁化开关场的增加。 此外，记录层包括依次堆叠的第一铁磁层，第一非磁性层，第二铁磁层，第二非磁性层和第三铁磁层。 第一和第二铁磁层以及第二和第三铁磁层彼此反平行地耦合，使得可以在大致单个方向上控制记录层的磁化分布。

公开(公告)号：US20100270633A1

公开(公告)日：2010-10-28

申请号：US12830954

申请日：2010-07-06

申请人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Taisuke Furukawa ,  Masakazu Taki

发明人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Taisuke Furukawa ,  Masakazu Taki

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/132 ,  H01F10/3254 ,  H01F10/3272 ,  H01L27/228

摘要： Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.

摘要翻译： 铁磁层具有朝向彼此抵消的方向取向的磁化，使得铁磁层的净磁化基本上为零。 也就是说，铁磁层与插入其间的非磁性层交换耦合，从而形成SAF结构。 由于形成SAF结构的铁磁层的净磁化基本上为零，记录层的磁化由铁磁层的磁化决定。 因此，铁磁层由具有高的单轴磁各向异性的CoFeB合金制成，铁磁层由具有高交换耦合力的CoFe合金制成。

公开(公告)号：US20100156405A1

公开(公告)日：2010-06-24

申请号：US12601098

申请日：2008-05-27

申请人： Taisuke Furukawa ,  Takeharu Kuroiwa ,  Shingo Tomohisa ,  Takashi Takenaga ,  Masakazu Taki ,  Hiroshi Takada ,  Yuji Abe

发明人： Taisuke Furukawa ,  Takeharu Kuroiwa ,  Shingo Tomohisa ,  Takashi Takenaga ,  Masakazu Taki ,  Hiroshi Takada ,  Yuji Abe

IPC分类号： G01R33/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/072 ,  G01R33/091

摘要： A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

摘要翻译： 一种磁场检测装置，包括用于调整施加到磁阻元件的磁场的磁体（磁通量）。 平面图中的基板上磁体的形状在一端部侧呈锥形，在与一端部相反的另一端部侧呈大致漏斗状，另一端部宽度大于一端部 并且在输出侧端部的前方配置有磁阻元件。 在基板上的磁性体中，锥形部分的轮廓不像漏斗那样呈直线状，而是具有弯曲形状，其中第一弯曲部分以柔和曲率向外突出，第二弯曲部分向内突出，曲率类似于 第一弯曲部分的连续形成。

公开(公告)号：US06420191B2

公开(公告)日：2002-07-16

申请号：US09768552

申请日：2001-01-25

申请人： Takeharu Kuroiwa ,  Tsuyoshi Horikawa ,  Tetsuro Makita ,  Noboru Mikami ,  Teruo Shibano

发明人： Takeharu Kuroiwa ,  Tsuyoshi Horikawa ,  Tetsuro Makita ,  Noboru Mikami ,  Teruo Shibano

IPC分类号： H01G706

CPC分类号： H01L28/60 ,  H01L27/10852 ,  H01L28/55

摘要： A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.

摘要翻译： 诸如包括电容器的DRAM的半导体器件，其中电容器的下电极是金属电极，金属电极主要由钌或铱组成，并且通过没有氧化物层的材料直接连接到电容器电介质膜 金属电极形成在金属电极的表面上。 与使用铂形成电极的常规情况相比，由铱或钌制成的下电极可以容易地被处理，并且当形成电容器电介质膜时也不能被氧化，因此可以防止电容的减小。

公开(公告)号：US09553063B2

公开(公告)日：2017-01-24

申请号：US13885841

申请日：2011-04-18

申请人： Yoshiji Ohtsu ,  Taku Kusunoki ,  Akira Yamada ,  Takeharu Kuroiwa ,  Masayoshi Tarutani

发明人： Kenji Ohtsu ,  Taku Kusunoki ,  Akira Yamada ,  Takeharu Kuroiwa ,  Masayoshi Tarutani

IPC分类号： H01L23/488 ,  H01L23/00 ,  H01L29/45 ,  H01L23/482 ,  H01L21/04 ,  H01L29/16

CPC分类号： H01L24/13 ,  H01L21/0485 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/83 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/452 ,  H01L2224/04026 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05179 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/05678 ,  H01L2224/29006 ,  H01L2224/2908 ,  H01L2224/29339 ,  H01L2224/32013 ,  H01L2224/32245 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/00

摘要： The semiconductor element has an electrode including: a Ni-inclusion metal layer containing nickel formed on a side of at least one surface of the semiconductor-element constituting part; a Ni-barrier metal layer formed outwardly on a side of the Ni-inclusion metal layer opposite to the side toward the semiconductor-element constituting part; and a surface metal layer outwardly formed on a side of the Ni-barrier metal layer opposite to the side toward the semiconductor-element constituting part, to be connected to the metal nanoparticles sintered layer; wherein the Ni-barrier metal layer contains a metal for suppressing diffusion of nickel toward the surface metal layer.

摘要翻译： 所述半导体元件具有包括：形成在所述半导体元件构成部件的至少一个面的一侧的含有镍的Ni-夹杂金属层的电极， 在与所述半导体元件构成部分的一侧相反的所述Ni-夹杂物层的一侧向外形成的Ni阻挡金属层; 和与金属纳米粒子烧结层连接的与Ni半导体元件构成部分相反一侧的Ni阻挡金属层一侧向外形成的表面金属层; 其中所述Ni阻挡金属层含有用于抑制镍向所述表面金属层扩散的金属。