公开(公告)号：US6104738A

公开(公告)日：2000-08-15

申请号：US894763

申请日：1997-11-13

申请人： Masahiro Kitoh ,  Nobuyuki Otsuka ,  Masato Ishino ,  Yasushi Matsui ,  Yuichi Inaba

发明人： Masahiro Kitoh ,  Nobuyuki Otsuka ,  Masato Ishino ,  Yasushi Matsui ,  Yuichi Inaba

IPC分类号： H01S5/042 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19 ,  H01S3/08

CPC分类号： H01S5/10 ,  H01S2301/18 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/12 ,  H01S5/1206 ,  H01S5/1215 ,  H01S5/1218 ,  H01S5/1225 ,  H01S5/1228 ,  H01S5/20 ,  H01S5/2036 ,  H01S5/2275 ,  H01S5/32391

摘要： In a semiconductor laser device 100, an n-type InGaAsP light confinement layer 2, a multiple quantum well active layer 3, a p-type InGaAsP light confinement layer 4, and a p-type InP cladding layer 5 are formed on an n-type InP substrate 1 to be in a mesa structure extending in stripes along the cavity length direction. Moreover, regions on both sides of this striped mesa are buried with a p-type InP current blocking layer 6 and an n-type InP current blocking layer 7. Furthermore, a p-type InP burying layer 8 and a p-type InGaAsP contact layer 9 are formed thereon. The oscillation wavelength of the semiconductor laser device 100 is around 1.3 .mu.m. The stripe width of the active layer 3 is such that the width W1 at the front end face and the width W2 at the rear end face have a relationship of W1

摘要翻译： PCT No.PCT / JP96 / 03837第 371日期：1997年11月13日 102（e）1997年11月13日PCT PCT 1996年12月26日PCT公布。 出版物WO97 / 24787 日期1997年7月10日在半导体激光装置100中，n型InGaAsP光限制层2，多量子阱活性层3，p型InGaAsP光限制层4和p型InP包覆层5为 在n型InP衬底1上形成为沿着空腔长度方向以条纹延伸的台面结构。 此外，这种条状台面的两侧的区域用p型InP电流阻挡层6和n型InP电流阻挡层7埋设。此外，p型InP掩埋层8和p型InGaAsP接触 层9形成在其上。 半导体激光装置100的振荡波长约为1.3μm。 有源层3的条带宽度使得前端面处的宽度W1和后端面的宽度W2具有W1

公开(公告)号：US5856207A

公开(公告)日：1999-01-05

申请号：US667643

申请日：1996-06-20

申请人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

发明人： Nobuyuki Otsuka ,  Masahiro Kitoh ,  Masato Ishino ,  Yasushi Matsui

IPC分类号： H01L29/15 ,  H01S5/22 ,  H01S5/227 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01L29/155 ,  H01S5/227 ,  H01S5/2205 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434 ,  Y10S148/095

摘要： The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.

摘要翻译： 本发明的半导体激光器包括：第一导电类型的半导体衬底; 形成在所述半导体衬底上的条形多层结构，所述条形多层结构包括有源层; 以及在所述条形多层结构的两侧形成在所述半导体衬底上的电流阻挡部分，其中所述电流阻挡部分具有第二导电类型的第一电流阻挡层和形成所述第一导电类型的第二电流阻挡层 在第一电流阻挡层上，第一电流阻挡层包括具有相对低浓度的第二导电类型的杂质的低浓度区域和具有高于低浓度杂质浓度的高浓度区域 浓度区域，并且低浓度区域设置在比高浓度区域更靠近条形多层结构的位置。

公开(公告)号：US5784188A

公开(公告)日：1998-07-21

申请号：US796934

申请日：1997-02-07

申请人： Shinji Nakamura ,  Satoshi Kamiyama ,  Kenichi Matsuda ,  Yasushi Matsui

发明人： Shinji Nakamura ,  Satoshi Kamiyama ,  Kenichi Matsuda ,  Yasushi Matsui

IPC分类号： G02F1/015 ,  G02F1/017 ,  G02F1/03

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F2001/0157 ,  G02F2203/19

摘要： An electro-absorption optical modulator, where a waveguide length of the absorption layer is denoted by L, a light confinement coefficient thereof is denoted by .GAMMA., and a performance factor of the absorption layer at an applied voltage V to an absorption layer is denoted by K(V), has design parameters selected so that a relationship .vertline.K(V)-.GAMMA..multidot.L.vertline. .ltoreq.0.005 cm is satisfied in a continuous operation range of a quenching ration T.sub.Att. The waveguide length L is preferably optimizrd so as to satisfy K(V).apprxeq..GAMMA..multidot.L in the operation range.

摘要翻译： 将吸收层的波导长度用L表示的电吸收光调制器用GAMMA表示其光限制系数，吸收层的施加电压V下的吸收层的性能因子表示为 K（V）具有选择的设计参数，使得关系| K（V）-GAMMA xL | 在骤冷比TAtt的连续运行范围内满足0.005cm。 波导长度L优选地优选地在操作范围内满足K（V）APPROX GAMMA xL。

公开(公告)号：US5494521A

公开(公告)日：1996-02-27

申请号：US218389

申请日：1994-03-25

申请人： Nobuyuki Otsuka ,  Yasushi Matsui

发明人： Nobuyuki Otsuka ,  Yasushi Matsui

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C23C16/52

CPC分类号： C23C16/45502 ,  C23C16/455 ,  C23C16/45561 ,  C30B25/14

摘要： Herein disclosed is a vapor growth system, in which the number of dummy lines is reduced to decrease the number of lines led into a valve system, thereby enabling thin film growth having a good interfacial steepleness. The system comprising gas supplying lines A70, B71 and C72, which are made up of AsH.sub.3 process gas lines A62, B65, C68 and balance lines A61, B64 and C67, respectively. The balance lines A61, B64 and C67 contributes equalization of products of the viscosity and the flow rate in the gas supplying lines A70, B71 and C72, and the dummy line 60. Only when AsH.sub.3 (A), AsH.sub.3 (B) and AsH.sub.3 gases are not fed upon formation of the film growth, the dummy line 60 is connected to the main line. Whereby, the system is free from pressure fluctuation of the gas in the main line, with an arrangement of even a single dummy line.

摘要翻译： 这里公开了一种蒸气生长系统，其中虚线的数量减少以减少引入阀系统的管线数量，从而实现具有良好界面陡峭性的薄膜生长。 该系统包括由AsH 3工艺气体管线A62，B65，C68和余量管线A61，B64和C67构成的气体供应管线A70，B71和C72。 平衡线A61，B64和C67有助于气体供给管线A70，B71和C72以及虚拟管线60中的粘度和流量的乘积的均衡。只有当AsH 3（A），AsH 3（B）和AsH 3气体 在膜生长形成时不进料，虚线60连接到主线。 因此，该系统在主线中没有气体的压力波动，甚至布置了单个虚拟线。

公开(公告)号：US5381499A

公开(公告)日：1995-01-10

申请号：US87209

申请日：1993-07-02

申请人： Naoki Takenaka ,  Yasushi Matsui

发明人： Naoki Takenaka ,  Yasushi Matsui

IPC分类号： H01S5/00 ,  G02B6/42 ,  G02B6/00 ,  G02B6/36

CPC分类号： G02B6/4204 ,  G02B6/4208 ,  G02B6/4227 ,  G02B6/4237

摘要： A light-emitting or light-receiving assembly is disclosed wherein the optical axis of input or output light to or from an optical fiber may not be shifted or dislocated under various environmental conditions. An optical isolator 3 is fixed on a lens mount 7 carrying a lens 2 and a ferrule 5 holding the optical fiber 12 therein is fixed to a ferrule holder 6 and the lens mount 7. Then, the distance between the lens 2 and an end surface 4 of the optical fiber is predetermined with a mechanical machining accuracy. This is followed by center-to-center adjustment through the use of a unit holder 8 placed around the lens mount 7. Thereafter, the lens mount 7 is fixedly secured to the unit holder 8 which in turn is fixedly secured to the laser mount 9, through the use of the YAG welding technique. An assembly unit 100 containing a semiconductor laser 1, the lens 2, the optical isolator 3 and the ferrule 4 is mounted on a temperature controlling Peltier effect element 10 by solder welding.

摘要翻译： 公开了一种发光或光接收组件，其中到或来自光纤的输入或输出光的光轴在各种环境条件下可能不会移位或脱位。 将光隔离器3固定在承载透镜2的透镜座7上，并且将光纤12保持在其中的套圈5固定到套圈保持器6和透镜座7.然后，透镜2与端面之间的距离 光纤4的机械加工精度被预先确定。 然后通过使用放置在透镜座7周围的单元保持器8进行中心到中心的调节。此后，透镜座7固定地固定到单元保持器8上，单元保持器8固定地固定在激光座9上 ，通过使用YAG焊接技术。 包含半导体激光器1，透镜2，光隔离器3和套圈4的组装单元100通过焊接焊接安装在温度控制珀尔帖效应元件10上。

公开(公告)号：US5378810A

公开(公告)日：1995-01-03

申请号：US949105

申请日：1992-09-21

申请人： Yoshimi Takai ,  Jun Kondo ,  Yasushi Matsui ,  Yutaka Teranishi ,  Rie Matsui

发明人： Yoshimi Takai ,  Jun Kondo ,  Yasushi Matsui ,  Yutaka Teranishi ,  Rie Matsui

IPC分类号： C07K14/47 ,  C07K14/705 ,  C07K13/00 ,  C12N15/00

CPC分类号： C07K14/705 ,  C07K14/4722

摘要： The present invention provides a GTP binding protein containing the following amino acid sequence, with a molecular weight of about 22K dalton and having GTP binding activity which is inhibited by N-ethyl-maleimide and GTP hydrolyzing activity:Thr-Ile-Glu-Asp-Ser-Tyr, and a method for the production of a GTP binding protein, which comprises introducing a DNA fragment containing DNA that encodes the GTP binding protein into a cloning site present at the downstream to a promoter of an expression vector, then introducing the expression vector thus constructed into a host, culturing said host, thereby expressing and accumulating the GTP binding protein and then collecting thereof.

摘要翻译： 本发明提供含有下列氨基酸序列的GTP结合蛋白，其分子量约为22K道尔顿，具有被N-乙基 - 马来酰亚胺抑制的GTP结合活性和GTP水解活性：Thr-Ile-Glu-Asp- Ser-Tyr和GTP结合蛋白的制造方法，其特征在于，将含有编码GTP结合蛋白的DNA的DNA片段导入到下游的克隆位点，形成表达载体的启动子， 载体如此构建成宿主，培养所述宿主，从而表达和积聚GTP结合蛋白，然后收集。

公开(公告)号：US5233212A

公开(公告)日：1993-08-03

申请号：US692395

申请日：1991-04-25

申请人： Makoto Ohi ,  Hideaki Arima ,  Natsuo Ajika ,  Atsushi Hachisuka ,  Yasushi Matsui

发明人： Makoto Ohi ,  Hideaki Arima ,  Natsuo Ajika ,  Atsushi Hachisuka ,  Yasushi Matsui

IPC分类号： H01L27/04 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L21/76801 ,  H01L21/76834 ,  H01L27/10808 ,  Y10S257/90

摘要： A semiconductor device includes a plurality of gate electrodes (6a, 6b, 6c, 6d) arranged on the surface of a semiconductor substrate (1) with insulating layers (5, 8) covering the top and the side walls of the gate electrodes. The spaces between the opposing side walls of adjacent gate electrodes on the surface of the element isolation region (2) re smaller than twice the thickness of the thinnest insulating layer (8) among the insulating layers of the side walls of the gate electrodes on the surface of the active regions. The space (14) between the gate electrodes on the element isolation region is filled with the insulating isolation layer (8) so that unevenness in the underlying portion on the element isolation region on which the conductive interconnection layer (10) to be formed is reduced, preventing thinning of the conductive interconnection layer and disconnection due to excessive etching of a resin film in patterning the conductive interconnection layer.

摘要翻译： 半导体器件包括布置在半导体衬底（1）的表面上的多个栅电极（6a，6b，6c，6d），绝缘层（5,8）覆盖了栅电极的顶部和侧壁。 在元件隔离区域（2）的表面上的相邻栅电极的相对侧壁之间的间隔小于栅电极侧壁的绝缘层中最薄绝缘层（8）的厚度的两倍 活性区的表面。 元件隔离区域上的栅电极之间的空间（14）填充有绝缘隔离层（8），使得要形成导电互连层（10）的元件隔离区域上的下面部分的不均匀性减小 防止导电互连层变薄，并且在图案化导电互连层时由于树脂膜的过度蚀刻而导致的断开。

公开(公告)号：US5157469A

公开(公告)日：1992-10-20

申请号：US685398

申请日：1991-04-16

申请人： Tomonori Okudaira ,  Hideaki Arima ,  Makoto Ohi ,  Kaoru Motonami ,  Yasushi Matsui

发明人： Tomonori Okudaira ,  Hideaki Arima ,  Makoto Ohi ,  Kaoru Motonami ,  Yasushi Matsui

IPC分类号： H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/417 ,  H01L29/78

CPC分类号： H01L29/41775 ,  H01L27/10817 ,  H01L29/7831 ,  Y10S257/90

摘要： A field effect transistor and a method of manufacturing thereof are disclosed that is not reduced in the characteristic of withstanding voltage between multilayer interconnection layers even when scaled to a higher integration. This field effect transistor includes side walls 21a formed on both sides of a bit line 15 so that the bottom side end contacts the upper surface of side walls 20a of gate electrodes 4b and 4c. The thickness of an insulating film interposed between gate electrodes 4b and 4c and a base portion 11a forming a low electrode 11 of a capacitor is not reduced. The characteristic of withstanding voltage is not deteriorated between multilayer interconnection layers even when scaled to higher integration.

摘要翻译： 公开了一种场效应晶体管及其制造方法，即使在缩小到更高的集成度时，也不会降低多层互连层之间的耐电压特性。 该场效应晶体管包括形成在位线15两侧的侧壁21a，使得底侧端接触栅电极4b和4c的侧壁20a的上表面。 插入在栅电极4b和4c之间的绝缘膜的厚度和形成电容器的低电极11的基部11a的厚度不降低。 即使缩放到更高的集成度，耐压电压的特性也不会在多层互连层之间劣化。

公开(公告)号：US5116739A

公开(公告)日：1992-05-26

申请号：US288470

申请日：1988-12-22

申请人： Yutaka Teranishi ,  Nobuhiko Takamatsu ,  Yasushi Matsui ,  Masako Kimura ,  Yasuko Ikeda ,  Yuuki Morimoto

发明人： Yutaka Teranishi ,  Nobuhiko Takamatsu ,  Yasushi Matsui ,  Masako Kimura ,  Yasuko Ikeda ,  Yuuki Morimoto

IPC分类号： C07K14/775 ,  C12N15/12 ,  C12N15/70 ,  C12N15/81 ,  C12N15/85

CPC分类号： C07K14/775 ,  C12N15/70 ,  C12N15/81 ,  C12N15/85

摘要： The invention provides DNA fragments coding for human apolipoprotein E or human apolipoprotein E-like substances having physiological activities equivalent to those of said human apolipoprotein E, expression vectors suitable for production of such proteins, hosts for use in the production, and process for the production, as well as such proteins thereby produced.

摘要翻译： 本发明提供编码人载脂蛋白E或具有与所述人载脂蛋白E相当的生理活性的人载脂蛋白E或人载脂蛋白E样物质的DNA片段，适用于生产这种蛋白质的表达载体，用于生产的宿主和用于生产的方法 ，以及由此产生的这样的蛋白质。

公开(公告)号：US4843609A

公开(公告)日：1989-06-27

申请号：US138086

申请日：1987-12-28

申请人： Jun Ohya ,  Yasushi Matsui

发明人： Jun Ohya ,  Yasushi Matsui

IPC分类号： H04B10/00 ,  G02B6/12 ,  G02F2/00 ,  H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/125 ,  H01S5/14 ,  H04B10/524 ,  H04B10/54

CPC分类号： H04B10/61 ,  G02B6/12004 ,  G02F2/002 ,  H01S5/0264 ,  H01S5/1032 ,  H01S5/125 ,  H04B10/64 ,  H01S5/141

摘要： Disclosed is an optical integrated circuit for heterodyne detection. The optical integrated circuit comprises: a semiconductor substrate; an active region of a semiconductor laser; two optical waveguides; a photo detector; and an optical coupler composed of the waveguides. The emission of light from the active region of the semiconductor laser is synthesized as local oscillation light with the transmission light. The synthesized light travels through the optical coupler and is detected by the photo detector.

摘要翻译： 公开了一种用于外差检测的光学集成电路。 该光学集成电路包括：半导体衬底; 半导体激光器的有源区; 两个光波导; 光电检测器 以及由该波导构成的光耦合器。 来自半导体激光器的有源区域的光的发射被合成为具有透射光的本地振荡光。 合成的光线通过光耦合器，由光电检测器检测。