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21.
公开(公告)号:US07439506B2
公开(公告)日:2008-10-21
申请号:US11798239
申请日:2007-05-11
申请人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号: H01J37/256 , H01J37/244
CPC分类号: H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要翻译: 通过提供新颖的检查方法和采用这种新方法的检测装置,本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置,该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤:产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子,并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。
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22.
公开(公告)号:US07385198B2
公开(公告)日:2008-06-10
申请号:US11326399
申请日:2006-01-06
IPC分类号: H01J37/26
CPC分类号: H01J37/28 , G01L1/241 , G01L5/0047 , G01N23/20 , G01N23/20058 , G01N23/2251 , H01J37/2955 , H01J2237/24585 , H01J2237/2544 , H01J2237/2813 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要: A method and apparatus for measuring the physical properties of a micro region measures the two-dimensional distribution of stress/strain in real time at high resolution and sensitivity and with a high level of measuring position matching. A sample is scanned and irradiated with a finely focused electron beam (23, 26), and the displacement of position of a diffraction spot (32, 33) is measured by a two-dimensional position-sensitive electron detector (13). The displacement amount is outputted as a voltage value that is then converted into the magnitude of the stress/strain according to the principle of a nano diffraction method, and the magnitude is displayed in synchronism with a sample position signal.
摘要翻译: 用于测量微区物理特性的方法和装置以高分辨率和灵敏度实时测量应力/应变的二维分布以及高水平的测量位置匹配。 扫描样品并用精细聚焦的电子束(23,26)照射,并且通过二维位置敏感电子检测器(13)测量衍射光斑(32,33)的位置位移。 将位移量作为电压值输出,然后根据纳米衍射方法的原理将其转换为应力/应变的大小,并且与样本位置信号同步地显示幅度。
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23.
公开(公告)号:US06750451B2
公开(公告)日:2004-06-15
申请号:US10183157
申请日:2002-06-28
IPC分类号: H01J3726
CPC分类号: H01J37/2955 , H01J2237/2802
摘要: Disclosed is an observation apparatus and method using an electron beam, capable of measuring stress and strain information on a crystal structure in a specimen using electron beam diffraction images. A method according to the invention includes mounting a specimen on a specimen stage; irradiating a predetermined area in the specimen with an electron beam while scanning the electron beam, and acquiring an enlarged image of a specimen internal structure in the predetermined area; irradiating a specific portion included in the predetermined area and acquiring a diffraction image showing the crystal structure in the specimen; extracting information on the crystal structure in the specimen; displaying the information of the crystal structure in the specimen so as to be superimposed on the acquired enlarged image. The observation method according to the invention can obtain information on the crystal structure in a specimen with a high degree of sensitivity and with a high level of resolution.
摘要翻译: 公开了一种使用电子束的观测装置和方法,其能够使用电子束衍射图像测量样品中的晶体结构的应力和应变信息。 根据本发明的方法包括将样品安装在样品台上; 在扫描电子束的同时用电子束照射样本中的预定区域,并获取预定区域中的样本内部结构的放大图像; 照射包含在预定区域中的特定部分,并获取示出样品中的晶体结构的衍射图像; 提取样品中晶体结构的信息; 在样本中显示晶体结构的信息,以便叠加在所获取的放大图像上。 根据本发明的观察方法可以以高灵敏度和高分辨率获得关于样品中的晶体结构的信息。
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公开(公告)号:US5552602A
公开(公告)日:1996-09-03
申请号:US398684
申请日:1995-03-06
申请人: Hiroshi Kakibayashi , Yasuhiro Mitsui , Hideo Tadokoro , Katsuhiro Kuroda , Masanari Koguchi , Kazutaka Tsuji , Tatsuo Makishima , Mikio Ichihashi , Shigeto Isakozawa
发明人: Hiroshi Kakibayashi , Yasuhiro Mitsui , Hideo Tadokoro , Katsuhiro Kuroda , Masanari Koguchi , Kazutaka Tsuji , Tatsuo Makishima , Mikio Ichihashi , Shigeto Isakozawa
IPC分类号: G01N23/04 , G01R31/305 , H01J37/26
CPC分类号: G01R31/305 , G01N23/046 , G01N2223/419 , H01J2237/226
摘要: 3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen as well as conventional electron microscope observations is carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. For that purpose, the present invention provides a scanning transmission electron microscope having an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons (i.d. avalanche multiplication), an electron gun emitting an electron beam toward the photoconductive-film to detect the holes generated therein, and electron deflector electrodes deflecting the electron beam on the photoconductive-film. Avalanche multiplication in the photoconductive-film amplifies the signal of these photons at so high signal-to-noise ratio that the electron microscope in this invention can detect such weak electrons as emitted at high angle from the specimen at high sensitivity and resolution. Therefore this invention enables a scanning transmission electron microscope to obtain for example 3-dimensional image of point defects and impurity elements existing in joint interfaces and contacts in a ULSI device rapidly and accurately.
摘要翻译: 通过电子显微镜以高速和准确的方式对薄膜样品中的原子排列和原子种类进行3维观察,以及常规的电子显微镜观察,测量从样品以高角度发射的电子。 为此目的,本发明提供了一种具有电子检测装置的扫描透射电子显微镜,该电子检测装置包括将由此检测的电子转化为光子的闪烁体,从其检测的闪烁体的光电导膜转换光子至c.a. 与这些光子(i.d.雪崩乘法)一样多的电子 - 空穴对的1000倍,向光电导膜发射电子束以检测其中产生的空穴的电子枪以及偏转电子束在光电导膜上的电子偏转器电极。 光电导膜中的雪崩乘法以如此高的信噪比放大了这些光子的信号,使得本发明的电子显微镜能够以高灵敏度和分辨率从样品中以高角度检测出这样的弱电子。 因此,本发明能够使扫描透射电子显微镜能够快速,准确地获得例如存在于ULSI装置的接合界面和触点中的点缺陷和杂质元素的3维图像。
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公开(公告)号:US5442182A
公开(公告)日:1995-08-15
申请号:US145161
申请日:1993-11-03
申请人: Toshiro Kubo , Toshiyuki Ohashi , Mikio Ichihashi , Yuji Sato
发明人: Toshiro Kubo , Toshiyuki Ohashi , Mikio Ichihashi , Yuji Sato
IPC分类号: G01Q30/02 , G01Q30/20 , H01J37/141
CPC分类号: H01J37/141
摘要: An electron lens comprising a first exciting coil, a second exciting coil, a casing for encompassing the first and second exciting coils, and an excitation control apparatus for controlling the excitation state of at least the first exciting coil independently of the second exciting coil. The excitation control apparatus independently controls currents applied to the first and second exciting coils, respectively. At this time, exothermy of each coil can be kept constant and thermal deformation of the casing can be prevented by keeping the sum of the absolute values of the currents applied to the coils.
摘要翻译: 一种电子透镜,包括第一激励线圈,第二激励线圈,用于包围第一和第二激励线圈的壳体,以及用于独立于第二激励线圈来控制至少第一励磁线圈的激励状态的励磁控制装置。 励磁控制装置分别独立地控制施加到第一和第二励磁线圈的电流。 此时,可以通过保持施加到线圈的电流的绝对值的总和来保持每个线圈的放热恒定并且可以防止壳体的热变形。
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公开(公告)号:US08669535B2
公开(公告)日:2014-03-11
申请号:US13322025
申请日:2010-04-14
IPC分类号: H01J1/50
CPC分类号: H01J37/063 , H01J37/073 , H01J37/141 , H01J2237/06316 , H01J2237/06341 , H01J2237/065 , H01J2237/26
摘要: The present invention has an object to provide a cold cathode field-emission electron gun with low aberration, to thereby provide a high-brightness electron gun even in the case of a large current. The present invention provides a field-emission electron gun which extracts an electron beam from a cathode and converges the extracted electron beam, the field-emission electron gun including: a magnetic field lens which is provided such that the cathode is disposed inside of a magnetic field of the lens; and an extraction electrode for extracting electrons from the cathode, the extraction electrode being formed into a cylindrical shape without an aperture structure. The present invention can provide an electron gun having a function of converging an electron beam using a magnetic field, the electron gun which is capable of reducing an incidental electrostatic lens action and has small aberration and high brightness.
摘要翻译: 本发明的目的是提供一种具有低像差的冷阴极场致发射电子枪,从而即使在大电流的情况下也提供高亮度电子枪。 本发明提供一种场致发射电子枪,其从阴极提取电子束并使所提取的电子束会聚,该场发射电子枪包括:磁场透镜,其被设置为使得阴极设置在磁性 镜头领域; 以及用于从阴极提取电子的引出电极,所述引出电极形成为没有孔结构的圆筒形状。 本发明可以提供一种电子枪,其具有使用磁场会聚电子束的功能,该电子枪能够减少偶然的静电透镜作用并且具有小的像差和高亮度。
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27.
公开(公告)号:US20090057556A1
公开(公告)日:2009-03-05
申请号:US12211343
申请日:2008-09-16
申请人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号: G01N23/00
CPC分类号: H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要翻译: 通过提供新颖的检查方法和采用这种新方法的检测装置,本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置,该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤:产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子,并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。
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28.
公开(公告)号:US20060113473A1
公开(公告)日:2006-06-01
申请号:US11326399
申请日:2006-01-06
IPC分类号: G21K7/00
CPC分类号: H01J37/28 , G01L1/241 , G01L5/0047 , G01N23/20 , G01N23/20058 , G01N23/2251 , H01J37/2955 , H01J2237/24585 , H01J2237/2544 , H01J2237/2813 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要: A method and apparatus for measuring the physical properties of a micro region measures the two-dimensional distribution of stress/strain in real time at high resolution and sensitivity and with a high level of measuring position matching. A sample is scanned and irradiated with a finely focused electron beam (23, 26), and the displacement of position of a diffraction spot (32, 33) is measured by a two-dimensional position-sensitive electron detector (13). The displacement amount is outputted as a voltage value that is then converted into the magnitude of the stress/strain according to the principle of a nano diffraction method, and the magnitude is displayed in synchronism with a sample position signal.
摘要翻译: 用于测量微区物理特性的方法和装置以高分辨率和灵敏度实时测量应力/应变的二维分布以及高水平的测量位置匹配。 扫描样品并用精细聚焦的电子束(23,26)照射,并且通过二维位置敏感电子检测器(13)测量衍射光斑(32,33)的位置位移。 将位移量作为电压值输出,然后根据纳米衍射方法的原理将其转换为应力/应变的大小,并且与样本位置信号同步地显示幅度。
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公开(公告)号:US06987265B2
公开(公告)日:2006-01-17
申请号:US10083481
申请日:2002-02-27
申请人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号: H01J37/28
CPC分类号: H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
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30.
公开(公告)号:US06512227B2
公开(公告)日:2003-01-28
申请号:US09982965
申请日:2001-10-22
申请人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Atsuko Takafuji , Hiroshi Toyama , Katsuya Sugiyama
发明人: Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Atsuko Takafuji , Hiroshi Toyama , Katsuya Sugiyama
IPC分类号: G01N2300
CPC分类号: H01J37/28 , G01N23/04 , H01J2237/2817
摘要: An object of the present invention is to provide an inspection method using an electron beam and an inspection apparatus therefor, which are capable of enhancing the resolution, improving the inspection speed and reliability, and realizing miniaturization the apparatus. To achieve the above object, according to the present invention, there is provided an inspection method using an electron beam, including the steps of; applying a voltage on a sample via a sample stage; converging an electron beam on the sample; scanning the sample with the converged electron beam and simultaneously, continuously moving the sample stage; detecting charged particles generated from the sample; and detecting a defect on the sample on the basis of the detected charged particles; wherein a distance between the sample and the shield frame is determined on the basis of a critical discharge between the sample stage and the shield frame; coils of at least hexapoles for correcting the shape of an electron beam are provided; the electron beam is deflected for blanking during movement of the sample with the crossover of the electron beam taken as a fulcrum of blanking; or the magnitude of the voltage applied to the sample may be determined depending on the kind of sample.
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