公开(公告)号：US10366895B2

公开(公告)日：2019-07-30

申请号：US15687874

申请日：2017-08-28

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Anton Mauder ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/423 ,  H01J37/00 ,  H01L21/265 ,  H01L29/739 ,  H01L29/78

Abstract: A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.

公开(公告)号：US10317338B2

公开(公告)日：2019-06-11

申请号：US15716598

申请日：2017-09-27

Applicant: Infineon Technologies AG

Inventor： Naveen Goud Ganagona ,  Moriz Jelinek ,  Helmut Oefner ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: G01N21/3563 ,  G01N21/35

Abstract: A method of determining the carbon content in a silicon sample may include: generating electrically active polyatomic complexes within the silicon sample. Each polyatomic complex may include at least one carbon atom. The method may further include: determining a quantity indicative of the content of the generated polyatomic complexes in the silicon sample, and determining the carbon content in the silicon sample from the determined quantity.

公开(公告)号：US20180102423A1

公开(公告)日：2018-04-12

申请号：US15831247

申请日：2017-12-04

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Moriz Jelinek ,  Johannes Laven ,  Helmut Oefner ,  Werner Schustereder

IPC: H01L29/739 ,  H01L29/36 ,  H01L29/10 ,  H01L21/66 ,  H01L21/263 ,  H01L21/324

CPC classification number: H01L29/7395 ,  H01L21/263 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7397

Abstract: A semiconductor device includes at least one transistor structure. The at least one transistor structure includes an emitter or source terminal, and a collector or drain terminal. A carbon concentration within a semiconductor substrate region located between the emitter or source terminal and the collector or drain terminal varies between the emitter or source terminal and the collector or drain terminal.

公开(公告)号：US09859361B2

公开(公告)日：2018-01-02

申请号：US15016680

申请日：2016-02-05

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Wolfgang Jantscher ,  Roland Rupp ,  Werner Schustereder ,  Hans Weber

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/265 ,  H01L21/266 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L29/0634 ,  H01L21/046 ,  H01L21/0465 ,  H01L21/26546 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/2003

Abstract: A semiconductor device includes a semiconductor body having a semiconductor body material with a dopant diffusion coefficient that is smaller than the corresponding dopant diffusion coefficient of silicon, at least one first semiconductor region doped with dopants of a first conductivity type and having a columnar shape that extends into the semiconductor body along an extension direction, wherein a respective width of the at least one first semiconductor region continuously increases along the extension direction; and at least one second semiconductor region included in the semiconductor body. The at least one second semiconductor region is arranged adjacent to the at least one first semiconductor region, and is doped with dopants of a second conductivity type complementary to the first conductivity type.

公开(公告)号：US09627209B2

公开(公告)日：2017-04-18

申请号：US15049192

申请日：2016-02-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Hans-Joachim Schulze ,  Ingo Muri ,  Friedrich Kroener ,  Werner Schustereder

IPC: H01L21/322 ,  H01L29/868 ,  H01L21/265 ,  H01L21/263 ,  H01L21/324 ,  H01L21/3063

CPC classification number: H01L21/26513 ,  H01L21/263 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/3063 ,  H01L21/3242

Abstract: A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.

公开(公告)号：US09613805B1

公开(公告)日：2017-04-04

申请号：US14966640

申请日：2015-12-11

Applicant: Infineon Technologies AG

Inventor： Werner Schustereder ,  Holger Schulze ,  Johannes Laven ,  Roman Baburske ,  Rudolf Berger ,  Thomas Gutt

IPC: H01L21/02

CPC classification number: H01L21/02694 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02675 ,  H01L21/26513 ,  H01L21/324

Abstract: A method for forming a semiconductor device comprises forming an amorphous or polycrystalline semiconductor layer adjacently to at least one semiconductor doping region having a first conductivity type located in a semiconductor substrate. The method further comprises incorporating dopants into the amorphous or polycrystalline semiconductor layer during or after forming the amorphous or polycrystalline semiconductor layer. The method further comprises annealing the amorphous or polycrystalline semiconductor layer to transform at least a part of the amorphous or polycrystalline semiconductor layer into a substantially monocrystalline semiconductor layer and to form at least one doping region having the second conductivity type in the monocrystalline semiconductor layer, such that a p-n junction is formed between the at least one semiconductor doping region having the first conductivity type and the at least one doping region having the second conductivity type.

公开(公告)号：US20160322198A1

公开(公告)日：2016-11-03

申请号：US14701320

申请日：2015-04-30

Applicant: Infineon Technologies AG

Inventor： Ewald Wiltsche ,  Peter Zupan ,  Werner Schustereder ,  Moriz Jelinek ,  Robert Eberwein ,  Friedrich Kroener

IPC: H01J37/317 ,  H01L21/67 ,  C23C14/16 ,  C23C14/34 ,  H01J37/08 ,  C23C14/48

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/0822

Abstract: An ion source for an implanter includes a first solid state source electrode disposed in an ion source chamber. The first solid state source electrode includes a source material coupled to a first negative potential node. A second solid state source electrode is disposed in the ion source chamber. The second solid state source electrode includes the source material coupled to a second negative potential node, and the first solid state source electrode and the second solid state source electrode are configured to produce ions to be implanted by the implanter.

Abstract translation: 用于注入机的离子源包括设置在离子源室中的第一固态源电极。 第一固态源极包括耦合到第一负电位节点的源极材料。 第二固态源电极设置在离子源室中。 第二固体源电极包括耦合到第二负电位节点的源极材料，并且第一固态源极电极和第二固态源极电极被配置为产生待被注入器植入的离子。

公开(公告)号：US20160211336A1

公开(公告)日：2016-07-21

申请号：US15081487

申请日：2016-03-25

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Hans-Joachim Schulze ,  Moriz Jelinek ,  Werner Schustereder

IPC: H01L29/32 ,  H01L29/36

CPC classification number: H01L29/32 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/306 ,  H01L21/3221 ,  H01L21/324 ,  H01L21/3242 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/7802 ,  H01L29/86

Abstract: A semiconductor device includes a semiconductor body with parallel first and second surfaces and containing hydrogen-related donors. A concentration profile of the hydrogen-related donors vertical to the first surface includes a maximum value of at least 1E15 cm−3 at a first distance to the first surface and does not fall below 1E14 cm−3 over at least 60% of an interval between the first surface and the first distance.

Abstract translation: 半导体器件包括具有平行的第一和第二表面并且含有氢的相关供体的半导体本体。 垂直于第一表面的氢相关供体的浓度分布包括在距第一表面的第一距离处的至少1E15cm-3的最大值，并且在间隔的至少60％内不低于1E14cm-3 在第一表面和第一距离之间。

公开(公告)号：US20160049474A1

公开(公告)日：2016-02-18

申请号：US14825231

申请日：2015-08-13

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Georg Bauer ,  Mario Barusic ,  Oliver Humbel ,  Hans Millonig ,  Werner Schustereder

IPC: H01L29/10 ,  H01L29/739 ,  H01L21/263 ,  H01L21/266 ,  H01L21/225 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/1095 ,  H01L21/225 ,  H01L21/2636 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/3221 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/207 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/66272 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66363 ,  H01L29/732 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/744 ,  H01L29/8611

Abstract: Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Abstract translation: 公开了一种方法和半导体器件。 该方法包括通过第一表面将复合中心原子注入到半导体本体中，并且使得注入的复合中心原子在第一扩散过程中在半导体本体中扩散。

公开(公告)号：US20150228446A1

公开(公告)日：2015-08-13

申请号：US14177910

申请日：2014-02-11

Applicant: Infineon Technologies AG

Inventor： Alexander Breymesser ,  Stephan Voss ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01J37/147 ,  H01L29/06 ,  H01L29/744 ,  H01J37/317 ,  H01J37/20

CPC classification number: C23C14/48 ,  H01J37/1477 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/20214 ,  H01J2237/30483 ,  H01L21/265 ,  H01L21/68764 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0638 ,  H01L29/0657 ,  H01L29/36 ,  H01L29/45 ,  H01L29/744 ,  H01L29/861

Abstract: An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. A beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral.

Abstract translation: 离子注入装置包括离子束引导单元，基板支撑件和控制器。 控制器被配置为实现通过离子束引导单元的离子束和衬底支撑件之间的相对运动。 安装在基板支架上的基板上的离子束的光束轨迹包括圆形或螺旋状。