公开(公告)号：US20190237597A1

公开(公告)日：2019-08-01

申请号：US16376791

申请日：2019-04-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/075 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/077

CPC classification number: H01L31/02366 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/50

Abstract: A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

公开(公告)号：US20160204196A1

公开(公告)日：2016-07-14

申请号：US15077213

申请日：2016-03-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： CHRISTOS D. DIMITRAKOPOULOS ,  JEEHWAN KIM ,  HONGSIK PARK ,  BYUNGHA SHIN

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/32 ,  H01L29/12

CPC classification number: H01L29/0669 ,  B82Y10/00 ,  B82Y40/00 ,  C30B25/18 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02664 ,  H01L21/304 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/127 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/32 ,  Y10T156/1082

Abstract: A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer.

公开(公告)号：US20150340536A1

公开(公告)日：2015-11-26

申请号：US14819007

申请日：2015-08-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JEEHWAN KIM ,  DAVID B. MITZI ,  BYUNGHA SHIN ,  TEODOR K. TODOROV ,  MARK T. WINKLER

IPC: H01L31/0749 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/02167 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50

Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

Abstract translation: 光电器件和方法包括：衬底，形成在衬底上的导电层和由含有Cu-Zn-Sn的硫族化物材料形成在导电层上的吸收层。 在吸收层上形成发射极层，在包括原子层沉积（ALD）层的发射极层上形成缓冲层。 在缓冲层上形成透明导体层。

公开(公告)号：US20150336800A1

公开(公告)日：2015-11-26

申请号：US14816887

申请日：2015-08-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： STEPHEN W. BEDELL ,  CHRISTOS D. DIMITRAKOPOULOS ,  KEITH E. FOGEL ,  JAMES B. HANNON ,  JEEHWAN KIM ,  HONGSIK PARK ,  DIRK PFEIFFER ,  DEVENDRA K. SADANA

IPC: C01B31/04 ,  H01L21/683 ,  H01L29/16 ,  H01L21/02

CPC classification number: C01B31/0446 ,  C01B32/184 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/0272 ,  H01L21/2007 ,  H01L21/6835 ,  H01L29/1606 ,  H01L2221/68345 ,  H01L2221/68368 ,  H01L2221/68381 ,  Y10T156/11 ,  Y10T156/1153

Abstract: A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer.

Abstract translation: 二维材料的转印方法包括在基板上形成二维材料的扩散层，扩散层具有单层。 在扩散层上形成应力层，并且应力层被配置为向扩散层的最接近的单层施加应力。 最接近的单层通过机械分裂扩散层而剥离，其中最紧密的单层保留在应力层上。

公开(公告)号：US20150263191A1

公开(公告)日：2015-09-17

申请号：US14728658

申请日：2015-06-02

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/046 ,  H01L31/075

CPC classification number: H01L31/02366 ,  H01L31/046 ,  H01L31/047 ,  H01L31/075 ,  H01L31/18 ,  Y02E10/50 ,  Y10T428/24479

Abstract: A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.

Abstract translation: 光伏器件包括其中形成有多个孔形状的衬底。 多个孔形状各自具有从第一表面延伸并且深度变窄的衬底中的孔开口。 多个孔形状在第一表面上形成孔图案，孔图案包括分隔第一表面上的孔形状的平坦区域。 光伏器件堆叠形成在第一表面上并延伸到孔形状中。 还提供了方法。

公开(公告)号：US20150235849A1

公开(公告)日：2015-08-20

申请号：US14701213

申请日：2015-04-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： CHRISTOS D. DIMITRAKOPOULOS ,  JEEHWAN KIM ,  HONGSIK PARK ,  BYUNGHA SHIN

IPC: H01L21/02 ,  H01L21/304

CPC classification number: H01L29/0669 ,  B82Y10/00 ,  B82Y40/00 ,  C30B25/18 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02527 ,  H01L21/02529 ,  H01L21/02664 ,  H01L21/304 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/127 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/32 ,  Y10T156/1082

Abstract: A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer.

公开(公告)号：US20150228833A1

公开(公告)日：2015-08-13

申请号：US14697250

申请日：2015-04-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： AHMED ABOU-KANDIL ,  KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  MOHAMED SAAD ,  DEVENDRA K. SADANA

IPC: H01L31/075 ,  H01L31/0288 ,  H01L31/0224

CPC classification number: H01L31/075 ,  H01L27/14692 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0288 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: A photovoltaic device includes a p-type layer. An intrinsic layer is formed directly on the p-type layer and includes an interface region extending into the intrinsic layer that includes a gradually decreasing band gap energy going from the p-type layer into the intrinsic layer formed by a graded deposition temperature. An n-type layer is formed directly on the intrinsic layer.

Abstract translation: 光伏器件包括p型层。 本征层直接形成在p型层上，并且包括延伸到本征层的界面区域，该界面区域包括从p型层逐渐减小的带隙能量到通过梯度沉积温度形成的本征层。 n型层直接形成在本征层上。

公开(公告)号：US20140217356A1

公开(公告)日：2014-08-07

申请号：US13759711

申请日：2013-02-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： CAN BAYRAM ,  JACK O. CHU ,  CHRISTOS DIMITRAKOPOULOS ,  JEEHWAN KIM ,  HONGSIK PARK ,  DEVENDRA K. SADANA

IPC: H01L33/04

CPC classification number: H01L33/14 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/02612 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack.

Abstract translation: 电子设备包括扩散层和形成在扩散层上并与扩散层接触的第一接触层。 第一接触层由具有大于或等于有源层材料的导热性的导热结晶材料形成。 有源层包括一个或多个III族氮化物层。 在有源层上形成第二接触层，其中有源层垂直地设置在第一和第二接触层之间以形成垂直薄膜叠层。

公开(公告)号：US20140216534A1

公开(公告)日：2014-08-07

申请号：US13966917

申请日：2013-08-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： AUGUSTIN J. HONG ,  MARINUS J. HOPSTAKEN ,  JEEHWAN KIM ,  JOHN A. OTT ,  DEVENDRA K. SADANA

IPC: H01L31/075

CPC classification number: H01L31/03921 ,  H01L31/03762 ,  H01L31/03767 ,  H01L31/07 ,  H01L31/075 ,  H01L31/1884 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.

Abstract translation: 形成光伏器件的方法包括在透明电极和p型层之间形成缓冲层。 缓冲层包括掺杂的无锗硅基材料。 缓冲层具有落在透明电极和p型层的势垒能内的功函数。 在p型层上形成本征层和n型层。 还提供设备。

公开(公告)号：US20190326463A1

公开(公告)日：2019-10-24

申请号：US16502919

申请日：2019-07-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC: H01L31/077 ,  H01L31/0224 ,  H01L31/20 ,  C23C16/02 ,  C23C16/50 ,  H01L31/056 ,  H01L31/18 ,  H01L31/065 ,  H01L31/0368 ,  C23C16/515 ,  C23C16/455 ,  H01L31/0392 ,  H01L31/0376 ,  H01L31/0216 ,  H01L21/02

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.