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    PHOTODETECTOR AND METHOD OF FORMING THE PHOTODETECTOR ON STACKED TRENCH ISOLATION REGIONS
    22.
    发明申请
    PHOTODETECTOR AND METHOD OF FORMING THE PHOTODETECTOR ON STACKED TRENCH ISOLATION REGIONS 有权
    光电转换器和形成光栅在堆叠式隔离区上的方法

    公开(公告)号：US20160005775A1

    公开(公告)日：2016-01-07

    申请号：US14323164

    申请日：2014-07-03

    Applicant: International Business Machines Corporation

    Inventor： John J. Ellis-Monaghan ,  Qizhi Liu ,  Steven M. Shank

    IPC: H01L27/146

    CPC classification number: H01L27/14632 ,  G02B6/4202 ,  H01L21/76224 ,  H01L21/76283 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/101

    Abstract: Disclosed are structures and methods of forming the structures so as to have a photodetector isolated from a substrate by stacked trench isolation regions. In one structure, a first trench isolation region is in and at the top surface of a substrate and a second trench isolation region is in the substrate below the first. A photodetector is on the substrate aligned above the first and second trench isolation regions. In another structure, a semiconductor layer is on an insulator layer and laterally surrounded by a first trench isolation region. A second trench isolation region is in and at the top surface of a substrate below the insulator layer and first trench isolation region. A photodetector is on the semiconductor layer and extends laterally onto the first trench isolation region. The stacked trench isolation regions provide sufficient isolation below the photodetector to allow for direct coupling with an off-chip optical fiber.

    Abstract translation: 公开了形成结构的结构和方法，以便具有通过堆叠的沟槽隔离区从衬底隔离的光电检测器。 在一种结构中，第一沟槽隔离区位于衬底的顶表面中并且位于衬底的顶表面处，并且第二沟槽隔离区位于第一沟槽下方的衬底中。 光电探测器在衬底上对准在第一和第二沟槽隔离区之上。 在另一种结构中，半导体层位于绝缘体层上并被第一沟槽隔离区横向包围。 第二沟槽隔离区位于绝缘体层和第一沟槽隔离区下面的衬底的顶表面中和在其顶表面。 光电检测器在半导体层上并且横向延伸到第一沟槽隔离区域上。 层叠的沟槽隔离区域在光电检测器下面提供足够的隔离以允许与片外光纤的直接耦合。

    Vertically curved waveguide
    23.
    发明授权
    Vertically curved waveguide 有权
    垂直弯曲波导

    公开(公告)号：US09002156B2

    公开(公告)日：2015-04-07

    申请号：US13872396

    申请日：2013-04-29

    Applicant: International Business Machines Corporation

    Inventor： John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Mark D. Jaffe ,  Kirk D. Peterson ,  Jed H. Rankin

    IPC: G02B6/12 ,  G02B6/26 ,  G02B6/122 ,  G02B6/13

    CPC classification number: G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02B6/4214

    Abstract: An optical waveguide structure may include an optical waveguide structure located within a semiconductor structure and an optical coupler. The optical coupler may include a metallic structure located within an electrical interconnection region of the semiconductor structure, whereby the metallic structure extends downward in a substantially curved shape from a top surface of the electrical interconnection region and couples to the optical waveguide structure. The optical coupler may further include an optical signal guiding region bounded within the metallic structure, whereby the optical coupler receives an optical signal from the top surface and couples the optical signal to the optical waveguide structure such that the optical signal propagation is substantially vertical at the top surface and substantially horizontal at the optical waveguide structure.

    Abstract translation: 光波导结构可以包括位于半导体结构内的光波导结构和光耦合器。 光耦合器可以包括位于半导体结构的电互连区域内的金属结构，由此金属结构从电互连区域的顶表面以基本弯曲的形状向下延伸并且耦合到光波导结构。 光耦合器还可以包括限定在金属结构内的光信号引导区域，由此光耦合器从顶表面接收光信号并将光信号耦合到光波导结构，使得光信号传播在 顶表面并且在光波导结构处基本上水平。

    Biological and chemical sensors
    25.
    发明授权
    Biological and chemical sensors 有权
    生物和化学传感器

    公开(公告)号：US08871549B2

    公开(公告)日：2014-10-28

    申请号：US13767024

    申请日：2013-02-14

    Applicant: International Business Machines Corporation

    Inventor： John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Derrick Liu

    IPC: H01L21/00 ,  H01L29/66 ,  G01N27/414

    CPC classification number: G01N27/414 ,  G01N27/4145 ,  G01N27/4148 ,  H01L29/66477

    Abstract: Device structures, fabrication methods, and design structures for a biological and chemical sensor used to detect a property of a substance. The device structure includes a drain and a source of a field effect transistor formed at a frontside of a substrate. A sensing layer is formed at a backside of the substrate. The sensing layer is configured to receive the substance.

    Abstract translation: 用于检测物质性质的生物和化学传感器的装置结构，制造方法和设计结构。 器件结构包括形成在衬底前侧的场效应晶体管的漏极和源极。 感光层形成在基板的背面。 感测层被配置为接收物质。

    Biosensors integrated with a microfluidic structure
    28.
    发明授权
    Biosensors integrated with a microfluidic structure 有权
    与微流体结构集成的生物传感器

    公开(公告)号：US08674474B2

    公开(公告)日：2014-03-18

    申请号：US14033615

    申请日：2013-09-23

    Applicant: International Business Machines Corporation

    Inventor： Kristin M. Ackerson ,  John J. Ellis-Monaghan ,  Jeffrey P. Gambino ,  Yen L. Lim

    IPC: H01L21/70 ,  H01L21/76

    CPC classification number: G01N27/4145 ,  H01L29/772

    Abstract: A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers.

    Abstract translation: 提供了由电极包围的微流体结构的生物传感器和围绕生物传感器的微流体结构形成电极的方法。 一种方法包括在第一层中形成栅极或电极。 该方法还包括在第二层中形成沟槽。 该方法还包括在沟槽中形成第一金属层，使得第一金属层与栅极或电极电接触。 该方法还包括在沟槽中形成牺牲材料。 该方法还包括在牺牲材料上形成第二金属层并与第一金属层接触。 该方法还包括去除牺牲材料，使得由第一和第二金属层围绕的微流体通道形成。

    Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing
    29.
    发明授权
    Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing 有权
    用于像素传感器单元的非均匀栅极介电电荷和制造方法

    公开(公告)号：US08610185B2

    公开(公告)日：2013-12-17

    申请号：US13736505

    申请日：2013-01-08

    Applicant: International Business Machines Corporation

    Inventor： Brent A. Anderson ,  Andres Bryant ,  William F. Clark, Jr. ,  John J. Ellis-Monaghan ,  Edward J. Nowak

    IPC: H01L31/062

    CPC classification number: H01L31/02 ,  H01L27/14614 ,  H01L27/14689

    Abstract: A non-uniform gate dielectric charge for pixel sensor cells, e.g., CMOS optical imagers, and methods of manufacturing are provided. The method includes forming a gate dielectric on a substrate. The substrate includes a source/drain region and a photo cell collector region. The method further includes forming a non-uniform fixed charge distribution in the gate dielectric. The method further includes forming a gate structure on the gate dielectric.

    Abstract translation: 提供了用于像素传感器单元的非均匀栅介质电荷，例如CMOS光学成像器，以及制造方法。 该方法包括在衬底上形成栅极电介质。 衬底包括源/漏区和光电池收集区。 该方法还包括在栅极电介质中形成不均匀的固定电荷分布。 该方法还包括在栅极电介质上形成栅极结构。

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