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    Semiconductor laser for operation in librational modes
    22.
    发明授权
    Semiconductor laser for operation in librational modes 有权
    半导体激光器用于演示模式

    公开(公告)号：US06333944B1

    公开(公告)日：2001-12-25

    申请号：US09591716

    申请日：2000-06-12

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Evgueni E. Narimanov ,  Alfred Douglas Stone

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Evgueni E. Narimanov ,  Alfred Douglas Stone

    IPC分类号： H01S3083

    CPC分类号： H01S3/083

    摘要： A solid state laser comprises a cavity resonator in the form of a generally cylindrical body and, located within the resonator, an active region which generates lasing light when suitably pumped. The resonator has a relatively high effective refractive index (n>2 and typically n>3) is sufficiently deformed from circularity so as to support at least one librational mode (e.g., a V-shaped or a bow-tie mode, the latter being presently preferred for generating relatively high power, directional outputs). Specifically described is a Group III-V compound semiconductor, quantum cascade (QC), micro-cylinder laser in which the resonator has a flattened quadrupolar deformation from circularity. This laser exhibits both a highly directional output emission and a three-order of magnitude increase in optical output power compared to conventional semiconductor micro-cylinder QC lasers having circularly symmetric resonators.

    摘要翻译： 固体激光器包括呈大致圆柱形体形式的空腔谐振器，并且位于谐振器内部的有源区域，其在适当泵浦时产生激光。 谐振器具有相对较高的有效折射率（n> 2且通常n> 3）从圆形度充分变形，以便支持至少一种示范模式（例如，V形或蝴蝶结模式，后者为 目前优选用于产生相对高功率的方向输出）。 具体描述的是其中谐振器具有从圆形度的扁平四极变形的III-V族化合物半导体，量子级联（QC），微圆柱激光器。 与具有圆形对称谐振器的常规半导体微型气缸QC激光器相比，该激光器表现出高度方向性的输出发射和光输出功率三位数的增加。

    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
    26.
    发明授权
    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons 失效
    结合基于表面等离子体激元的波导的长波长半导体激光器

    公开(公告)号：US06301282B1

    公开(公告)日：2001-10-09

    申请号：US09124295

    申请日：1998-07-29

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Jerome Faist ,  Carlo Sirtori

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Jerome Faist ,  Carlo Sirtori

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/10 ,  H01S5/1046 ,  H01S5/323 ,  H01S5/3402 ,  H01S2301/145

    摘要： A long wavelength (e.g., mid-IR to far-IR) semiconductor laser comprises an active region and at least one cladding region characterized in that the cladding region includes a light guiding interface between two materials which have dielectric constants opposite in sign. Consequently, the guided modes are transverse magnetic polarized surface waves (i.e., surface plasmons) which propagate along the interface without the need for a traditional dielectric cladding. In a preferred embodiment, the interface is formed between a semiconductor layer and a metal layer. The complex refractive index of the metal layer preferably has an imaginary component which is much larger than its real component. In an illustrative embodiment, our laser includes a QC active region sandwiched between a pair of cladding regions one of which is a guiding interface based on surface plasmons and the other of which is a dielectric (e.g., semiconductor) structure.

    摘要翻译： 长波长（例如，中红外至红外IR）半导体激光器包括有源区和至少一个包层区，其特征在于包层区包括具有与符号相反的介电常数的两种材料之间的导光界面。 因此，引导模式是横向磁极化表面波（即，表面等离子体激元），其沿着界面传播而不需要传统的电介质包层。 在优选实施例中，界面形成在半导体层和金属层之间。 金属层的复合折射率优选具有远大于其实际分量的虚部。 在说明性实施例中，我们的激光器包括夹在一对包层区域之间的QC有源区域，其中一个是基于表面等离子体激元的引导界面，另一个是电介质（例如半导体）结构。

    Method for forming contacts to semiconductor devices
    27.
    发明授权
    Method for forming contacts to semiconductor devices 失效
    用于形成与半导体器件的接触的方法

    公开(公告)号：US4108738A

    公开(公告)日：1978-08-22

    申请号：US770014

    申请日：1977-02-18

    申请人： Alfred Yi Cho ,  Martin Victor Schneider

    发明人： Alfred Yi Cho ,  Martin Victor Schneider

    IPC分类号： H01L21/288 ,  H01L21/329 ,  H01L29/872 ,  C25D5/02 ,  C25D7/12

    CPC分类号： H01L29/66212 ,  H01L21/2885 ,  H01L29/872

    摘要： A Schottky barrier semiconductor device and process for making same is described wherein edge breakdown is avoided by making the rectifying contact in a curved depression in an epitaxial active layer having a nonuniform doping profile. The depression is formed by anodizing a portion of the epitaxial layer and etching the anodic oxide. Etching and electroplating of the contact are done in the same solution to avoid contamination of the metal-semiconductor interface.

    摘要翻译： 描述了肖特基势垒半导体器件及其制造方法，其中通过在具有不均匀掺杂分布的外延有源层中的弯曲凹陷中使整流接触避免了边缘击穿。 通过阳极氧化外延层的一部分并蚀刻阳极氧化物形成凹陷。 接触的蚀刻和电镀在相同的解决方案中进行，以避免金属 - 半导体界面的污染。