Shatter-proof liquid crystal panel with infrared filtering properties
    24.
    发明授权
    Shatter-proof liquid crystal panel with infrared filtering properties 失效
    具防红外滤光性能的防碎液晶面板

    公开(公告)号:US4749261A

    公开(公告)日:1988-06-07

    申请号:US947793

    申请日:1986-12-30

    摘要: Liquid crystal material is operable to modulate light transmitted through a panel such as a sunroof, window or partition. The panel may have safety glazing properties. The panel may also include means for reflecting infrared energy. The liquid crystal material includes operationally nematic liquid crystal having positive dielectric anisotropy and a containment medium for containing plural volumes of the liquid crystal material. The panel includes transparent surfaces with the liquid crystal material disposed therebetween and selectively operable primarily to transmit or primarily to scatter light. The liquid crystal material may alternatively include volumes of liquid crystal with a pleochroic dye in a containment medium for selectively attenuating light.

    摘要翻译: 液晶材料可操作以调制透过诸如天窗,窗户或隔板的面板的光。 面板可能具有安全玻璃性能。 面板还可以包括用于反射红外能量的装置。 液晶材料包括具有正介电各向异性的可操作地向列型液晶和用于容纳多倍液晶材料的容纳介质。 面板包括透明表面,其中液晶材料设置在它们之间,并且主要选择性地可操作地传输或主要散射光。 液晶材料可以替代地包括用于选择性衰减光的容纳介质中的具有多色染料的液晶体积。

    BACKPLANES FOR DISPLAY APPLICATIONS, AND COMPONENTS FOR USE THEREIN
    25.
    发明申请
    BACKPLANES FOR DISPLAY APPLICATIONS, AND COMPONENTS FOR USE THEREIN 有权
    显示应用的背板及其使用的组件

    公开(公告)号:US20070035532A1

    公开(公告)日:2007-02-15

    申请号:US11461255

    申请日:2006-07-31

    IPC分类号: G09G5/00

    摘要: A thin-film transistor includes a gate electrode having a first gate electrode edge and a second gate electrode edge opposite the first gate electrode edge. The TFT also includes a drain electrode having a first drain electrode edge that overlaps the first gate electrode edge, and a second drain electrode edge that overlaps the second gate electrode edge. A method for fabricating a diode array for use in a display includes deposition of a conductive layer adjacent to a substrate, deposition of a doped semiconductor layer adjacent to the substrate, and deposition of an undoped semiconductor layer adjacent to the substrate. A display pixel unit provides reduced capacitative coupling between a pixel electrode and a source line. The unit includes a transistor, the pixel electrode, and the source line. The source line includes an extension that provides a source for the transistor. A patterned conductive portion is disposed adjacent to the source line. Another display pixel unit provides reduced pixel electrode voltage shifts. The unit includes a transistor, a pixel electrode, a source line and a balance line. The invention also provides a driver for driving a display provided with such a balance line.

    摘要翻译: 薄膜晶体管包括具有第一栅电极边缘和与第一栅电极边缘相对的第二栅电极边缘的栅电极。 TFT还包括具有与第一栅电极边缘重叠的第一漏电极边缘和与第二栅极边缘重叠的第二漏电极边缘的漏电极。 用于制造用于显示器的二极管阵列的方法包括:与衬底相邻的导电层的沉积,与衬底相邻的掺杂半导体层的沉积以及与衬底相邻的未掺杂的半导体层的沉积。 显示像素单元在像素电极和源极线之间提供减小的电容耦合。 该单元包括晶体管,像素电极和源极线。 源极线包括提供晶体管源极的扩展。 图案化导电部分邻近源极线设置。 另一显示像素单元提供减小的像素电极电压偏移。 该单元包括晶体管,像素电极,源极线和平衡线。 本发明还提供一种用于驱动具有这种平衡线的显示器的驱动器。

    Switching patch antenna
    27.
    发明申请
    Switching patch antenna 有权
    开关贴片天线

    公开(公告)号:US20050200528A1

    公开(公告)日:2005-09-15

    申请号:US10800164

    申请日:2004-03-12

    摘要: According to an embodiment of the invention, a patch antenna includes a patch coupled to a ground plane. The ground plane includes a first and second strip line. When the first strip line is activated, the antenna generates a signal having a first polarization, and when the second strip line is activated, the antenna generates a second polarization. The first polarization may be a horizontal polarization, and the second polarization may be a vertical polarization. The antenna may be incorporated into a radio frequency identification (RFID) interrogator, which may be used to read RFID tags attached to individual items.

    摘要翻译: 根据本发明的实施例,贴片天线包括耦合到接地平面的贴片。 接地平面包括第一和第二带状线。 当第一带状线被激活时,天线产生具有第一极化的信号,并且当第二带状线被激活时,天线产生第二极化。 第一偏振可以是水平偏振,并且第二偏振可以是垂直偏振。 该天线可以被结合到射频识别(RFID)询问器中,该询问器可用于读取附着到各个物品的RFID标签。

    Process for fabricating thin film transistors
    28.
    发明申请
    Process for fabricating thin film transistors 有权
    制造薄膜晶体管的工艺

    公开(公告)号:US20050067656A1

    公开(公告)日:2005-03-31

    申请号:US10919657

    申请日:2004-08-17

    CPC分类号: H01L29/66765 H01L29/78603

    摘要: Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300° C. during the processes used to form the transistors, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.

    摘要翻译: 晶体管通过在包含聚亚苯基聚酰亚胺的衬底上沉积至少一层半导体材料形成。 在用于形成晶体管的工艺期间,衬底允许使用超过300℃的处理温度,从而允许形成高质量的硅半导体层。 该基板也具有低的热膨胀系数,其与硅的热膨胀系数非常接近,从而减少硅层破裂或分层的任何趋势。

    Printable electrode structures for displays
    30.
    发明授权
    Printable electrode structures for displays 有权
    用于显示器的可印刷电极结构

    公开(公告)号:US06535197B1

    公开(公告)日:2003-03-18

    申请号:US09641458

    申请日:2000-08-18

    IPC分类号: G09G334

    摘要: Novel addressing schemes for controlling electronically addressable displays include a scheme for rear-addressing displays, which allows for in-plane switching of the display material. Other schemes include a rear-addressing scheme which uses a retroreflecting surface to enable greater viewing angle and contrast. Another scheme includes an electrode structure that facilitates manufacture and control of a color display. Another electrode structure facilitates addressing a display using an electrostatic stylus. Methods of using the disclosed electrode structures are also disclosed. Another scheme includes devices combining display materials with silicon transistor addressing structures.

    摘要翻译: 用于控制电子可寻址显示器的新型寻址方案包括用于后寻址显示器的方案,其允许显示材料的平面内切换。 其他方案包括使用回射表面以实现更大视角和对比度的后方寻址方案。 另一方案包括有利于彩色显示器的制造和控制的电极结构。 另一种电极结构有助于使用静电触针来寻址显示器。 还公开了使用所公开的电极结构的方法。 另一种方案包括将显示材料与硅晶体管寻址结构组合在一起的装置。