摘要:
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface.
摘要:
According to one embodiment, a composite resin includes a resin component; and a plurality of first powder bodies dispersed in the resin component. Each of the first powder bodies has a nonlinear current-voltage characteristic having a decreasing resistance as a voltage increases. The first powder body is a polycrystalline powder body including a plurality of primary particles bound via a grain boundary. A component different from a major component of the primary particles exists in a higher concentration in the grain boundary than in an interior of the primary particles.
摘要:
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.
摘要:
According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first face, a second face, a side face, and a light emitting layer; a p-side electrode provided on the second face; an n-side electrode provided on the side face; a first p-side metal layer provided on the p-side electrode; a first n-side metal layer provided on the periphery of the n-side electrode; a first insulating layer provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer.
摘要:
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a first bonding material. The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials and a second bonding material. The scattering materials are configured to scatter radiated light of the light emitting layer. The second bonding material integrates the scattering materials.
摘要:
An optical transmission circuit device generates first and second optical signals from differential set and reset signals each time digital electric input signals of N bits are received. The differential set signal indicates an increase in signal strength relative to immediately preceding N bits of the digital electric input signals and the differential reset signal indicates a decrease in signal strength relative to the immediately preceding N bits. An optical reception circuit device generates first and second digital signals from the first and second optical signals and a third digital signal from the first and second digital signals, a magnitude of the third digital signal being increased by the first digital signal and decreased by the second digital signal. The optical reception circuit further generates a digital output signal of N bits from the third digital signal and an immediately preceding N bits of the digital output signal.
摘要:
According to one embodiment, a device module includes a mounting substrate, a device, and a bonding agent. The mounting substrate has a mounting surface and a plurality of pads. The device includes a plurality of electrode surfaces arranged in a first direction. The pad has a first width portion and a second width portion. The first width portion has a width in a second direction orthogonal to the first direction. The second width portion is wider than the first width portion and the electrode surfaces in the second direction. One end portion in the first direction of the electrode surface is bonded to the pad on the first width portion via the bonding agent. The other end portion in the first direction of the electrode surface is bonded to the pad on the second width portion via the bonding agent.
摘要:
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film, a p-side interconnection section, an n-side interconnection section, a phosphor layer, and a metal film. The semiconductor layer is formed on a substrate which is then removed. The p-side interconnection section is provided on the insulating film and electrically connected to the p-side electrode. The n-side interconnection section is provided on the insulating film and electrically connected to the n-side electrode. The phosphor layer is provided on the first surface and includes a step portion continued to the side surface of the semiconductor layer. The metal film is provided on the side surface of the semiconductor layer and a side surface of the step portion of the phosphor layer.
摘要:
A parallel receiver module includes a plurality of signal transmission lines arranged in a first direction; and a receiving semiconductor chip including a plurality of receiving channels arranged in the first direction. The plurality of receiving channels includes receiving circuits configured to receive signals from the signal transmission lines. At least one receiving channel among the plurality of receiving channels further includes a monitor circuit monitoring a receiving level of the signal from the signal transmission line. The at least one receiving channel is connectable with the signal transmission line by switching between the receiving circuit and the monitor circuit.
摘要:
According to one embodiment, a LIDAR system includes a laser oscillator, a collimator lens, a scan device, and a prism. The laser oscillator emits laser light. The collimator lens converts the laser light to parallel light. The scan device includes a reflective surface on which the laser light that has passed through the collimator lens is reflected, and a rotation device rotating the reflective surface around a rotation axis. The prism has a first surface and a second surface, and emits, from the second surface, the laser light that has been reflected on the reflective surface to enter the first surface.