SEMICONDUCTOR LIGHT EMITTING DEVICE
    21.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号:US20150221828A1

    公开(公告)日:2015-08-06

    申请号:US14688240

    申请日:2015-04-16

    IPC分类号: H01L33/40 H01L33/38

    摘要: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface.

    摘要翻译: 根据一个实施例,半导体发光器件包括第一半导体层,发光层,第二半导体层,p侧电极,多个n侧电极,第一绝缘膜,p侧互连 单元和n侧互连单元。 p侧互连单元设置在第一绝缘膜上,以通过穿过第一绝缘膜的第一通孔连接到p侧电极。 n侧互连单元设置在第一绝缘膜上,以通过刺穿第一绝缘膜的第二通孔共同连接到多个n侧电极。 多个n侧区域彼此分离,而不在第二表面处被连接。 p侧区域设置在第二表面的n侧区域的周围。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    24.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20140302625A1

    公开(公告)日:2014-10-09

    申请号:US14293713

    申请日:2014-06-02

    IPC分类号: H01L33/64 H01L33/50

    摘要: According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first face, a second face, a side face, and a light emitting layer; a p-side electrode provided on the second face; an n-side electrode provided on the side face; a first p-side metal layer provided on the p-side electrode; a first n-side metal layer provided on the periphery of the n-side electrode; a first insulating layer provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer.

    摘要翻译: 根据一个实施例,半导体发光器件包括:包括第一面,第二面,侧面和发光层的半导体层; 设置在所述第二面上的p侧电极; 设置在所述侧面上的n侧电极; 设置在p侧电极上的第一p侧金属层; 设置在n侧电极的周围的第一n侧金属层; 设置在第一n侧金属层的第二面侧的面上的第一绝缘层; 第二p侧金属层,与第一p侧金属层上的第一p侧金属层连接,并且从第一p侧金属层延伸到第一绝缘层; 以及设置在半导体层的周边区域中的第一n侧金属层的第二面侧的面上的第二n侧金属层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    25.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20140231844A1

    公开(公告)日:2014-08-21

    申请号:US13848140

    申请日:2013-03-21

    IPC分类号: H01L33/50

    摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a first bonding material. The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials and a second bonding material. The scattering materials are configured to scatter radiated light of the light emitting layer. The second bonding material integrates the scattering materials.

    摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,p侧电极,n侧电极,荧光材料层和散射层。 半导体层具有与第一表面相反一侧的第一表面和第二表面,并且包括发光层。 p侧电极和n侧电极设置在第二表面侧的半导体层上。 荧光材料层设置在第一表面的一侧,并且包括多个荧光材料和第一接合材料。 第一粘合材料集成荧光材料。 散射层设置在荧光体层上,包含散射物质和第二接合材料。 散射材料被配置为散射发光层的辐射光。 第二粘合材料集成散射材料。

    OPTICAL TRANSMISSION CIRCUIT DEVICE, OPTICAL RECEPTION CIRCUIT DEVICE, OPTICAL TRANSMISSION/RECEPTION CIRCUIT DEVICE AND OPTICAL TRANSMISSION METHOD
    26.
    发明申请
    OPTICAL TRANSMISSION CIRCUIT DEVICE, OPTICAL RECEPTION CIRCUIT DEVICE, OPTICAL TRANSMISSION/RECEPTION CIRCUIT DEVICE AND OPTICAL TRANSMISSION METHOD 审中-公开
    光传输电路装置,光接收电路装置,光传输/接收电路装置和光传输方法

    公开(公告)号:US20130322888A1

    公开(公告)日:2013-12-05

    申请号:US13782586

    申请日:2013-03-01

    IPC分类号: H04B10/00

    CPC分类号: H04B10/12 H04B10/801

    摘要: An optical transmission circuit device generates first and second optical signals from differential set and reset signals each time digital electric input signals of N bits are received. The differential set signal indicates an increase in signal strength relative to immediately preceding N bits of the digital electric input signals and the differential reset signal indicates a decrease in signal strength relative to the immediately preceding N bits. An optical reception circuit device generates first and second digital signals from the first and second optical signals and a third digital signal from the first and second digital signals, a magnitude of the third digital signal being increased by the first digital signal and decreased by the second digital signal. The optical reception circuit further generates a digital output signal of N bits from the third digital signal and an immediately preceding N bits of the digital output signal.

    摘要翻译: 每当接收到N位的数字电输入信号时,光传输电路装置从差分置位和复位信号产生第一和第二光信号。 差分设置信号指示相对于数字电输入信号的紧接在前的N位的信号强度的增加,并且差分复位信号表示相对于紧接在前的N位的信号强度的降低。 光接收电路装置从第一和第二光信号产生第一和第二数字信号以及来自第一和第二数字信号的第三数字信号,第三数字信号的幅度增加第一数字信号并减小第二数字信号 数字信号。 光接收电路还从第三数字信号和数字输出信号的紧前面的N位产生N位的数字输出信号。

    DEVICE MODULE
    27.
    发明申请
    DEVICE MODULE 有权
    设备模块

    公开(公告)号:US20130320371A1

    公开(公告)日:2013-12-05

    申请号:US13784778

    申请日:2013-03-04

    IPC分类号: H01L33/62 H01L33/50

    摘要: According to one embodiment, a device module includes a mounting substrate, a device, and a bonding agent. The mounting substrate has a mounting surface and a plurality of pads. The device includes a plurality of electrode surfaces arranged in a first direction. The pad has a first width portion and a second width portion. The first width portion has a width in a second direction orthogonal to the first direction. The second width portion is wider than the first width portion and the electrode surfaces in the second direction. One end portion in the first direction of the electrode surface is bonded to the pad on the first width portion via the bonding agent. The other end portion in the first direction of the electrode surface is bonded to the pad on the second width portion via the bonding agent.

    摘要翻译: 根据一个实施例,装置模块包括安装基板,装置和粘合剂。 安装基板具有安装表面和多个焊盘。 该装置包括沿第一方向布置的多个电极表面。 垫具有第一宽度部分和第二宽度部分。 第一宽度部分具有与第一方向正交的第二方向上的宽度。 第二宽度部分比第一宽度部分宽,电极表面在第二方向上。 电极表面的第一方向上的一个端部通过粘合剂与第一宽度部分上的焊盘接合。 电极表面的第一方向上的另一端部通过粘合剂与第二宽度部分上的焊盘接合。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    28.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20130248915A1

    公开(公告)日:2013-09-26

    申请号:US13778005

    申请日:2013-02-26

    IPC分类号: H01L33/38

    摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film, a p-side interconnection section, an n-side interconnection section, a phosphor layer, and a metal film. The semiconductor layer is formed on a substrate which is then removed. The p-side interconnection section is provided on the insulating film and electrically connected to the p-side electrode. The n-side interconnection section is provided on the insulating film and electrically connected to the n-side electrode. The phosphor layer is provided on the first surface and includes a step portion continued to the side surface of the semiconductor layer. The metal film is provided on the side surface of the semiconductor layer and a side surface of the step portion of the phosphor layer.

    摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,p侧电极,n侧电极,绝缘膜,p侧互连部,n侧互连部,荧光体层和 金属膜。 半导体层形成在衬底上,然后被去除。 p侧互连部设置在绝缘膜上并与p侧电极电连接。 n侧互连部设置在绝缘膜上并与n侧电极电连接。 荧光体层设置在第一表面上,并且包括连续于半导体层的侧表面的台阶部分。 金属膜设置在半导体层的侧表面和荧光体层的台阶部分的侧表面上。

    PARALLEL RECEIVER MODULE
    29.
    发明公开

    公开(公告)号:US20230291473A1

    公开(公告)日:2023-09-14

    申请号:US17821299

    申请日:2022-08-22

    发明人: Hideto FURUYAMA

    摘要: A parallel receiver module includes a plurality of signal transmission lines arranged in a first direction; and a receiving semiconductor chip including a plurality of receiving channels arranged in the first direction. The plurality of receiving channels includes receiving circuits configured to receive signals from the signal transmission lines. At least one receiving channel among the plurality of receiving channels further includes a monitor circuit monitoring a receiving level of the signal from the signal transmission line. The at least one receiving channel is connectable with the signal transmission line by switching between the receiving circuit and the monitor circuit.

    LIDAR SYSTEM
    30.
    发明申请

    公开(公告)号:US20220107397A1

    公开(公告)日:2022-04-07

    申请号:US17471020

    申请日:2021-09-09

    IPC分类号: G01S7/481 G02B27/30 G02B5/04

    摘要: According to one embodiment, a LIDAR system includes a laser oscillator, a collimator lens, a scan device, and a prism. The laser oscillator emits laser light. The collimator lens converts the laser light to parallel light. The scan device includes a reflective surface on which the laser light that has passed through the collimator lens is reflected, and a rotation device rotating the reflective surface around a rotation axis. The prism has a first surface and a second surface, and emits, from the second surface, the laser light that has been reflected on the reflective surface to enter the first surface.